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1. 发明授权

US07582182B2 Method and apparatus for measuring electron density of plasma and plasma processing apparatus 有权
公开(公告)号：US07582182B2
公开(公告)日：2009-09-01
申请号：US11742688
申请日：2007-05-01
申请人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
发明人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
IPC分类号： C23F1/00
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

2. 发明申请

US20110017706A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20110017706A1
公开(公告)日：2011-01-27
申请号：US12668106
申请日：2008-07-10
申请人： Tetsuro Takahashi , Yutaka Fujino , Hiroyuki Toshima , Atsushi Kubo , Song Yun Kang , Peter Ventzek , Sumie Segawa
发明人： Tetsuro Takahashi , Yutaka Fujino , Hiroyuki Toshima , Atsushi Kubo , Song Yun Kang , Peter Ventzek , Sumie Segawa
IPC分类号： C23F1/08 , C23C16/50 , C23F1/00 , C23C16/511 , C23C16/00
CPC分类号： H01L21/3145 , H01J37/32192 , H01J37/3222 , H01L21/02247 , H01L21/02332 , H01L21/318 , H01L21/67069 , H01L21/68735 , H01L21/68742
摘要： A wafer is disposed in a chamber, a plasma generating space is formed in the chamber, plasma processing is performed to the front surface of the processing object while keeping at least the front surface of the processing object in contact with the plasma generating space. The plasma processing is performed with the plasma generating space being kept in contact with at least the peripheral region of the back surface of the processing object.
摘要翻译：将晶片设置在室中，在室内形成等离子体产生空间，同时至少使处理对象的前表面与等离子体产生空间保持接触，对处理对象的前表面进行等离子体处理。等离子体处理是在等离子体产生空间与加工对象的后表面的至少周边区域保持接触的情况下进行的。

3. 发明授权

US07339656B2 Method and apparatus for measuring electron density of plasma and plasma processing apparatus 有权
公开(公告)号：US07339656B2
公开(公告)日：2008-03-04
申请号：US10831757
申请日：2004-04-26
申请人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
发明人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
IPC分类号： G01N21/00
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

4. 发明申请

US20070193514A1 METHOD AND APPARATUS FOR MEASURING ELECTRON DENSITY OF PLASMA AND PLASMA PROCESSING APPARATUS 有权
公开(公告)号：US20070193514A1
公开(公告)日：2007-08-23
申请号：US11742643
申请日：2007-05-01
申请人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
发明人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
IPC分类号： C23C16/00
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

5. 发明申请

US20070284044A1 METHOD AND APPARATUS FOR MEASURING ELECTRON DENSITY OF PLASMA AND PLASMA PROCESSING APPARATUS 有权
标题翻译：用于测量等离子体和等离子体处理装置的电子密度的方法和装置
公开(公告)号：US20070284044A1
公开(公告)日：2007-12-13
申请号：US11742688
申请日：2007-05-01
申请人： Naoki MATSUMOTO , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
发明人： Naoki MATSUMOTO , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
IPC分类号： H01L21/306
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.
摘要翻译：用于测量等离子体电子密度的装置即使在低电子密度条件或高压条件下也能精确地测量等离子体中的电子密度。该等离子体电子密度测量装置包括测量单元中的矢量网络分析仪，其测量复数反射系数并确定系数的虚部的频率特性。读取复数反射系数的虚部为零交叉点的共振频率，并且通过测量控制单元基于谐振频率计算电子密度。

6. 发明申请

US20050009347A1 Method and apparatus for measuring electron density of plasma and plasma processing apparatus 有权
标题翻译：用于测量等离子体和等离子体处理装置的电子密度的方法和装置
公开(公告)号：US20050009347A1
公开(公告)日：2005-01-13
申请号：US10831757
申请日：2004-04-26
申请人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
发明人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
IPC分类号： H05H1/00 , C23C16/52 , C23F4/00 , G01N23/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/461 , H01L21/66 , H05H1/46
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.
摘要翻译：用于测量等离子体电子密度的装置即使在低电子密度条件或高压条件下也能精确地测量等离子体中的电子密度。该等离子体电子密度测量装置包括测量单元中的矢量网络分析仪，其测量复数反射系数并确定系数的虚部的频率特性。读取复数反射系数的虚部为零交叉点的共振频率，并且通过测量控制单元基于谐振频率计算电子密度。

7. 发明申请

US20110061811A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20110061811A1
公开(公告)日：2011-03-17
申请号：US12920731
申请日：2009-02-26
申请人： Toru Ito , Sumie Segawa
发明人： Toru Ito , Sumie Segawa
IPC分类号： H01L21/3065
CPC分类号： H05H1/0081 , H01J37/32935
摘要： A plasma monitoring device is provided with a measuring section, and a coaxial cable connected to the measuring section. One end of the coaxial cable is inserted into a plasma generating region in a processing chamber. A leading end portion of the coaxial cable is permitted to be a probe, and the portion is in a state where the core cable is exposed. The measuring section detects frequency distribution of electromagnetic waves existing in plasma detected by the probe portion of the coaxial cable, and displays the detected frequency distribution.
摘要翻译：等离子体监测装置具有测量部分和连接到测量部分的同轴电缆。同轴电缆的一端插入到处理室中的等离子体产生区域中。同轴电缆的前端部被允许为探针，该部分处于芯线暴露的状态。测量部分检测由同轴电缆的探头部分检测到的存在于等离子体中的电磁波的频率分布，并显示检测到的频率分布。

8. 发明授权

US07532322B2 Method and apparatus for measuring electron density of plasma and plasma processing apparatus 有权
标题翻译：用于测量等离子体和等离子体处理装置的电子密度的方法和装置
公开(公告)号：US07532322B2
公开(公告)日：2009-05-12
申请号：US11566340
申请日：2006-12-04
申请人： Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
发明人： Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
IPC分类号： G01J3/30
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.
摘要翻译：用于测量等离子体电子密度的装置即使在低电子密度条件或高压条件下也能精确地测量等离子体中的电子密度。该等离子体电子密度测量装置包括测量单元中的矢量网络分析仪，其测量复数反射系数并确定系数的虚部的频率特性。读取复数反射系数的虚部为零交叉点的共振频率，并且通过测量控制单元基于谐振频率计算电子密度。

9. 发明授权

US06207007B1 Plasma processing system 失效
标题翻译：等离子体处理系统
公开(公告)号：US06207007B1
公开(公告)日：2001-03-27
申请号：US09276125
申请日：1999-03-25
申请人： Sumie Segawa , Toshiaki Makabe
发明人： Sumie Segawa , Toshiaki Makabe
IPC分类号： G01R2300
CPC分类号： H01J37/32935 , H01J37/32082
摘要： A plasma processing system controls the electronegativity of a plasma produced by ionizing a process gas when processing a substrate by using the plasma. The relation between the pressure in a processing vessel (1) and the frequency of a RF power source (11′), and the electronegativity of the plasma produced by the agency of RF power is determined beforehand. A controller (18) adjusts the pressure in the processing vessel (1) and/or the frequency of the RF power source (11′) in a real-time control mode by a feedback control operation on the basis of a pressure measured by a pressure sensor (17) and a frequency measured by a frequency meter (15) to adjust the electronegativity of the plasma to an appropriate value. The electronegativity of the plasma can be determined through simulation using a one-dimensional RCT model of the plasma.
摘要翻译：等离子体处理系统通过使用等离子体来处理衬底时，控制通过对工艺气体进行电离而产生的等离子体的电负性。预先确定处理容器（1）中的压力与RF电源（11'）的频率之间的关系以及由RF功率的代理产生的等离子体的电负性。控制器（18）通过反馈控制操作基于由一个或多个控制器测量的压力来调节处理容器（1）中的压力和/或RF功率源（11'）的频率在实时控制模式压力传感器（17）和由频率计（15）测量的频率，以将等离子体的电负性调整到适当的值。可以通过使用等离子体的一维RCT模型的模拟来确定等离子体的电负性。

10. 发明申请

US20070089835A1 METHOD AND APPARATUS FOR MEASURING ELECTRON DENSITY OF PLASMA AND PLASMA PROCESSING APPARATUS 有权
公开(公告)号：US20070089835A1
公开(公告)日：2007-04-26
申请号：US11566340
申请日：2006-12-04
申请人： Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
发明人： Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

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