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1. 发明授权

US07348129B2 Electron beam processing method and apparatus 失效
标题翻译：电子束处理方法和装置
公开(公告)号：US07348129B2
公开(公告)日：2008-03-25
申请号：US10810633
申请日：2004-03-29
申请人： Kazuyuki Mitsuoka , Minoru Honda , Song Yun Kang , Yusuke Saito
发明人： Kazuyuki Mitsuoka , Minoru Honda , Song Yun Kang , Yusuke Saito
IPC分类号： G03C5/00 , A61N5/00
CPC分类号： H01L21/31058 , Y10S430/143
摘要： An organic material film formed on a surface of an object to be processed is cured by electron beams irradiated thereon through a hydrocarbon radical generating gas. By employing the electron beams and the hydrocarbon radical generating gas, a deterioration of a k value of the organic material film and a reduction of a chemical resistance thereof are suppressed.
摘要翻译：在被处理物的表面上形成的有机材料膜通过发生烃源气体的电子束固化。通过使用电子束和烃自由基产生气体，可以抑制有机材料膜的k值的劣化和耐化学腐蚀性的降低。

2. 发明授权

US08753988B2 Starting material for use in forming silicon oxide film and method for forming silicon oxide film using same 失效
标题翻译：用于形成氧化硅膜的原料和使用其形成氧化硅膜的方法
公开(公告)号：US08753988B2
公开(公告)日：2014-06-17
申请号：US13375346
申请日：2010-05-27
申请人： Song Yun Kang
发明人： Song Yun Kang
IPC分类号： H01L21/316 , C07F7/21 , C23C16/40 , H01L21/02
CPC分类号： C23C16/402 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02216 , H01L21/02271 , H01L21/02274
摘要： Disclosed is a starting material for use in forming a silicon oxide film on a substrate by the CVD method, comprising a siloxane compound having a carbonyl group, wherein the starting material is decomposed by applying energy, thereby releasing CO and producing a product having no dangling bond in the chemical structure, and the product contributes to the formation of the film. As a result, a silicon oxide film having a favorable step coverage is formed.
摘要翻译：公开了一种用于通过CVD法在基板上形成氧化硅膜的原料，其包括具有羰基的硅氧烷化合物，其中原料通过施加能量而分解，从而释放出CO并产生没有悬空的产物化学结构中的键合，并且该产物有助于膜的形成。结果，形成了具有有利的台阶覆盖层的氧化硅膜。

3. 发明申请

US20120071006A1 STARTING MATERIAL FOR USE IN FORMING SILICON OXIDE FILM AND METHOD FOR FORMING SILICON OXIDE FILM USING SAME 失效
标题翻译：用于形成硅氧烷膜的起始材料及其使用形成硅氧烷膜的方法
公开(公告)号：US20120071006A1
公开(公告)日：2012-03-22
申请号：US13375346
申请日：2010-05-27
申请人： Song Yun Kang
发明人： Song Yun Kang
IPC分类号： H01L21/316 , C07F7/21 , C07F7/08
CPC分类号： C23C16/402 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02216 , H01L21/02271 , H01L21/02274
摘要： Disclosed is a starting material for use in forming a silicon oxide film on a substrate by the CVD method, comprising a siloxane compound having a carbonyl group, wherein the starting material is decomposed by applying energy, thereby releasing CO and producing a product having no dangling bond in the chemical structure, and the product contributes to the formation of the film. As a result, a silicon oxide film having a favorable step coverage is formed.
摘要翻译：公开了一种用于通过CVD法在基板上形成氧化硅膜的原料，其包括具有羰基的硅氧烷化合物，其中原料通过施加能量而分解，从而释放出CO并产生无悬挂的产物化学结构中的键合，并且该产物有助于膜的形成。结果，形成了具有有利的台阶覆盖层的氧化硅膜。

4. 发明申请

US20120052658A1 QUANTUM DOT FORMING METHOD, STORAGE MEDIUM STORING A PROGRAM AND SUBSTRATE PROCESSING APPARATUS FOR EXECUTION OF THE METHOD 审中-公开
标题翻译：量子点形成方法，存储介质存储方法和基板处理装置，用于执行方法
公开(公告)号：US20120052658A1
公开(公告)日：2012-03-01
申请号：US13216848
申请日：2011-08-24
申请人： Song Yun KANG , Satohiko HOSHINO
发明人： Song Yun KANG , Satohiko HOSHINO
IPC分类号： H01L21/20 , B05C9/08 , B82Y30/00 , B82Y40/00
CPC分类号： H01L21/02546 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L21/0259 , H01L21/02617
摘要： A quantum dot forming method for forming quantum dots on a surface of a substrate includes exciting a substrate surface with a laser beam having a standing wave which is irradiated from one side of the substrate along the surface of the substrate to excite the surface of the substrate at an interval of one half of a wavelength of the standing wave, and forming a quantum dot with a film differing in lattice constant from a base film forming the surface of the substrate by allowing the film differing in lattice constant to grow on the substrate to form the quantum dots in excited spots of the surface of the substrate.
摘要翻译：用于在基板的表面上形成量子点的量子点形成方法包括：激发基板表面，该激光束具有沿基板表面从基板的一侧照射的驻波，以激发基板的表面以驻波的波长的一半的间隔，通过使不同晶格常数的膜在基板上生长而形成具有与形成基板表面的基膜不同的晶格常数的量子点在基板表面的激发点形成量子点。

5. 发明授权

US07763551B2 RLSA CVD deposition control using halogen gas for hydrogen scavenging 失效
标题翻译：使用卤素气体进行氢气清除的RLSA CVD沉积控制
公开(公告)号：US07763551B2
公开(公告)日：2010-07-27
申请号：US12059100
申请日：2008-03-31
申请人： Jozef Brcka , Song Yun Kang , Toshio Nakanishi , Peter L. G. Ventzek , Minoru Honda , Masayuki Kohno
发明人： Jozef Brcka , Song Yun Kang , Toshio Nakanishi , Peter L. G. Ventzek , Minoru Honda , Masayuki Kohno
IPC分类号： H01L21/31
CPC分类号： C23C16/345 , C23C16/511 , H01J37/32192 , H01J37/3222 , Y10T29/41
摘要： Film thickness uniformity and stoichiometry are controlled and deposition rate is increased in the chemical vapor deposition (CVD) of silicon nitride from complex gas mixtures in microwave plasmas. In Si2H6+NH3+Ar gas mixtures using a radial line slot antenna (RLSA) microwave plasma to deposit SiN by CVD, deposition rate and film uniformity are improved by limiting the amounts of atomic or molecular hydrogen from the gas mixture during the deposition process. A halogen, for example, fluorine, is added to a gas mixture of silane or disilane, ammonia and argon. The halogen scavenges hydrogen from the mixture, and prevents the hydrogen from blocking the nitrogen and silicon atoms and their fragments from bonding to the surface atoms and to grow stoichiometric silicon nitride. Adding the halogen generates free halogen radicals that react with hydrogen to create hydrogen halide, for example, HF or HCl, thereby scavenging the hydrogen.
摘要翻译：微波等离子体中复合气体混合物中氮化硅的化学气相沉积（CVD）控制了膜厚均匀性和化学计量，沉积速率增加。在使用径向线槽天线（RLSA）微波等离子体通过CVD沉积SiN的Si 2 H 6 + NH 3 + Ar气体混合物中，通过在沉积过程中限制来自气体混合物的原子或分子氢的量来提高沉积速率和膜均匀性。将卤素，例如氟加入到硅烷或乙硅烷，氨和氩的气体混合物中。卤素从混合物中清除氢，并且防止氢阻挡氮和硅原子及其片段与表面原子结合并生长化学计量的氮化硅。加入卤素产生与氢反应产生卤化氢，例如HF或HCl的游离卤素自由基，从而清除氢。

6. 发明申请

US20110017706A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20110017706A1
公开(公告)日：2011-01-27
申请号：US12668106
申请日：2008-07-10
申请人： Tetsuro Takahashi , Yutaka Fujino , Hiroyuki Toshima , Atsushi Kubo , Song Yun Kang , Peter Ventzek , Sumie Segawa
发明人： Tetsuro Takahashi , Yutaka Fujino , Hiroyuki Toshima , Atsushi Kubo , Song Yun Kang , Peter Ventzek , Sumie Segawa
IPC分类号： C23F1/08 , C23C16/50 , C23F1/00 , C23C16/511 , C23C16/00
CPC分类号： H01L21/3145 , H01J37/32192 , H01J37/3222 , H01L21/02247 , H01L21/02332 , H01L21/318 , H01L21/67069 , H01L21/68735 , H01L21/68742
摘要： A wafer is disposed in a chamber, a plasma generating space is formed in the chamber, plasma processing is performed to the front surface of the processing object while keeping at least the front surface of the processing object in contact with the plasma generating space. The plasma processing is performed with the plasma generating space being kept in contact with at least the peripheral region of the back surface of the processing object.
摘要翻译：将晶片设置在室中，在室内形成等离子体产生空间，同时至少使处理对象的前表面与等离子体产生空间保持接触，对处理对象的前表面进行等离子体处理。等离子体处理是在等离子体产生空间与加工对象的后表面的至少周边区域保持接触的情况下进行的。

7. 发明申请

US20090241310A1 RLSA CVD DEPOSITION CONTROL USING HALOGEN GAS FOR HYDROGEN SCAVENGING 失效
标题翻译：使用氢气进行氢气扫描的RLSA CVD沉积控制
公开(公告)号：US20090241310A1
公开(公告)日：2009-10-01
申请号：US12059100
申请日：2008-03-31
申请人： Jozef Brcka , Song Yun Kang , Toshio Nakanishi , Peter L.G. Ventzek , Minoru Honda , Masayuki Kohno
发明人： Jozef Brcka , Song Yun Kang , Toshio Nakanishi , Peter L.G. Ventzek , Minoru Honda , Masayuki Kohno
IPC分类号： H01L21/00 , B66C17/08
CPC分类号： C23C16/345 , C23C16/511 , H01J37/32192 , H01J37/3222 , Y10T29/41
摘要： Film thickness uniformity and stoichiometry are controlled and deposition rate is increased in the chemical vapor deposition (CVD) of silicon nitride from complex gas mixtures in microwave plasmas. In Si2H6+NH3+Ar gas mixtures using a radial line slot antenna (RLSA) microwave plasma to deposit SiN by CVD, deposition rate and film uniformity are improved by limiting the amounts of atomic or molecular hydrogen from the gas mixture during the deposition process. A halogen, for example, fluorine, is added to a gas mixture of silane or disilane, ammonia and argon. The halogen scavenges hydrogen from the mixture, and prevents the hydrogen from blocking the nitrogen and silicon atoms and their fragments from bonding to the surface atoms and to grow stoichiometric silicon nitride. Adding the halogen generates free halogen radicals that react with hydrogen to create hydrogen halide, for example, HF or HCl, thereby scavenging the hydrogen.
摘要翻译：微波等离子体中复合气体混合物中氮化硅的化学气相沉积（CVD）控制了膜厚均匀性和化学计量，沉积速率增加。在使用径向线槽天线（RLSA）微波等离子体通过CVD沉积SiN的Si 2 H 6 + NH 3 + Ar气体混合物中，通过在沉积过程中限制来自气体混合物的原子或分子氢的量来提高沉积速率和膜均匀性。将卤素，例如氟加入到硅烷或乙硅烷，氨和氩的气体混合物中。卤素从混合物中清除氢，并且防止氢阻挡氮和硅原子及其片段与表面原子结合并生长化学计量的氮化硅。加入卤素产生与氢反应产生卤化氢，例如HF或HCl的游离卤素自由基，从而清除氢。

8. 发明申请

US20120247390A1 FILM FORMATION APPARATUS 审中-公开
标题翻译：胶片形成装置
公开(公告)号：US20120247390A1
公开(公告)日：2012-10-04
申请号：US13496794
申请日：2010-08-30
申请人： Ikuo Sawada , Song Yun Kang , Masaaki Matsukuma , Shigeru Kasai , Masato Morishima
发明人： Ikuo Sawada , Song Yun Kang , Masaaki Matsukuma , Shigeru Kasai , Masato Morishima
IPC分类号： C23C16/50 , C23C16/505 , C23C16/511
CPC分类号： C23C16/4412 , C23C16/452 , C23C16/45502 , C23C16/45574 , C23C16/509 , H01J37/32082 , H01J37/32431 , H01J37/3244 , H01J37/32568 , H01J37/32633
摘要： Disclosed is a film formation apparatus (1a) that forms a thin film upon a substrate (S), wherein partitions (41) separate the space above the substrate (S) into a plasma generation space (401) and an exhaust space (402) and extend downward from the ceiling of the processing container (10) to form an opening between the substrate (S) and the bottom end of the partitions, in which gas flows from the plasma generation space (401) to the exhaust space (402). An activating mechanism (42, 43) generates plasma by activating a first reactant gas that has been supplied to the plasma generation space (401). A second reactant gas supply section (411, 412) supplies a second reactant gas to the bottom of the plasma generation space (401), and an evacuation opening (23) evacuates the exhaust space (402) from a position that is higher than the bottom end of the partitions (41).
摘要翻译：公开了一种在基板（S）上形成薄膜的成膜装置（1a），其中隔板（41）将基板（S）上方的空间分离成等离子体产生空间（401）和排气空间（402）并且从处理容器（10）的天花板向下延伸，以形成基板（S）和分隔壁的底端之间的开口，其中气体从等离子体产生空间（401）流到排气空间（402）。激活机构（42,43）通过激活已经供应到等离子体产生空间（401）的第一反应气体产生等离子体。第二反应气体供给部（411,412）将第二反应气体供给到等离子体产生空间（401）的底部，排气口（23）将排气空间（402）从高于分区（41）的底端。

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