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    • 6. 发明申请
    • THROTTLE VALVE BODY AND THROTTLE VALVE DEVICE HAVING THE SAME
    • 节流阀阀体和带有相同阀门的阀门装置
    • US20120210977A1
    • 2012-08-23
    • US13430867
    • 2012-03-27
    • Wei-Shin KUOBi-Song HUANG
    • Wei-Shin KUOBi-Song HUANG
    • F02D9/00F02D9/08
    • F02D9/1055
    • A throttle valve body includes a main body, a main valve, and a bypass valve. The main body includes intake and bypass passages, a sensor mounting hole, and a bypass valve mounting hole. The main valve divides the intake passage into upstream and downstream portions. The bypass valve divides the bypass passage into upstream and downstream sections that are in fluid communication respectively with the upstream and downstream portions. The sensor mounting hole extends along an axis along which the downstream section extends. The bypass valve mounting hole is in fluid communication with a portion of the bypass passage disposed between the upstream and downstream sections.
    • 节流阀体包括主体,主阀和旁通阀。 主体包括进气和旁路通道,传感器安装孔和旁通阀安装孔。 主阀将进气通道分成上游和下游部分。 旁通阀将旁通通道分成与上游和下游部分流体连通的上游和下游部分。 传感器安装孔沿着下游部分延伸的轴线延伸。 旁通阀安装孔与设置在上游部分和下游部分之间的旁路通路的一部分流体连通。
    • 9. 发明申请
    • MULTI-EXPOSURE LITHOGRAPHY EMPLOYING DIFFERENTIALLY SENSITIVE PHOTORESIST LAYERS
    • 使用差分感光层的多次曝光光刻
    • US20120156450A1
    • 2012-06-21
    • US13406965
    • 2012-02-28
    • Wu-Song HuangWai-kin LiPing-Chuan Wang
    • Wu-Song HuangWai-kin LiPing-Chuan Wang
    • B32B3/00
    • G03F7/70466Y10S438/947Y10S438/948Y10T428/24802
    • A stack of a second photoresist having a second photosensitivity and a first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on a substrate. A first pattern is formed in the first photoresist by a first exposure and a first development, while the second photoresist underneath remains intact. A second pattern comprising an array of lines is formed in the second photoresist. An exposed portion of the second photoresist underneath a remaining portion of the first photoresist forms a narrow portion of a line pattern, while an exposed portion of the second photoresist outside the area of the remaining portions of the photoresist forms a wide portion of the line pattern. Each wide portion of the line pattern forms a bulge in the second pattern, which increases overlay tolerance between the second pattern and the pattern of conductive vias.
    • 在基板上形成具有第二感光性的第二光致抗蚀剂的叠层和具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。 通过第一曝光和第一显影在第一光致抗蚀剂中形成第一图案,而下面的第二光致抗蚀剂保持完整。 在第二光致抗蚀剂中形成包括线阵列的第二图案。 在第一光致抗蚀剂的剩余部分下面的第二光致抗蚀剂的暴露部分形成线图案的窄部分,而在光致抗蚀剂的剩余部分的区域外的第二光致抗蚀剂的暴露部分形成线图案的宽部分 。 线图案的每个宽部分在第二图案中形成凸起,这增加了第二图案和导电通孔图案之间的覆盖公差。