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1. 发明授权

US08319254B2 Micro-electromechanical system devices 有权
标题翻译：微机电系统设备
公开(公告)号：US08319254B2
公开(公告)日：2012-11-27
申请号：US13027209
申请日：2011-02-14
申请人： Scott G. Adams , Andrew J. Minnick , Charles W. Blackmer , Mollie K. Devoe
发明人： Scott G. Adams , Andrew J. Minnick , Charles W. Blackmer , Mollie K. Devoe
IPC分类号： H01L29/74
CPC分类号： B81B3/0008 , B81B2201/0235 , B81B2207/07 , G01P15/0802 , H01H59/0009 , H01L29/747 , H01L29/87
摘要： A micro-electromechanical system (MEMS) device includes a substrate, a first beam, a second beam, and a third beam. The first beam includes first and second portions separated by an isolation joint. The first and second portions each comprise a semiconductor and a first dielectric layer. An electrically conductive trace is mechanically coupled to the first beam and electrically coupled to the second portion's semiconductor but not the first portion's semiconductor. The second beam includes a second dielectric layer. The profile of each of the first second, and third beams has been formed by a dry etch. A cavity separates a surface of the substrate from the first, second, and third beams. The cavity has been formed by a dry etch. A side wall of each of the first, second, and third beams has substantially no dielectric layer disposed thereon, and the dielectric layer has been removed by a vapor-phase etch.
摘要翻译：微机电系统（MEMS）装置包括基板，第一光束，第二光束和第三光束。第一梁包括由隔离接头隔开的第一和第二部分。第一和第二部分各自包括半导体和第一介电层。导电迹线机械耦合到第一光束并且电耦合到第二部分的半导体，但不耦合到第一部分的半导体。第二光束包括第二电介质层。通过干蚀刻形成第一和第三光束中的每一个的轮廓。空腔将基板的表面与第一，第二和第三梁分离。通过干蚀刻形成空腔。第一，第二和第三光束中的每一个的侧壁基本上没有设置在其上的电介质层，并且通过气相蚀刻去除介电层。

2. 发明申请

US20120205752A1 Strengthened Micro-Electromechanical System Devices and Methods of Making Thereof 有权
标题翻译：加强微机电系统设备及其制造方法
公开(公告)号：US20120205752A1
公开(公告)日：2012-08-16
申请号：US13027199
申请日：2011-02-14
申请人： Charles W. Blackmer , Scott G. Adams , Andrew S. Hocking , Kristin J. Lynch , Ashish A. Shah
发明人： Charles W. Blackmer , Scott G. Adams , Andrew S. Hocking , Kristin J. Lynch , Ashish A. Shah
IPC分类号： H01L29/84 , G06F17/50 , H01L21/00
CPC分类号： B81C1/00698 , B81B2203/0118 , B81B2203/033 , H01L21/76232
摘要： In an embodiment, a micro-electromechanical device can include a substrate, a beam, and an isolation joint. The beam can be suspended relative to a surface of the substrate. The isolation joint can be between a first portion and a second portion of the beam, and can have a non-linear shape. In another embodiment, a micro-electromechanical device can include a substrate, a beam, and an isolation joint. The beam can be suspended relative to a surface of the substrate. The isolation joint can be between a first portion and a second portion of the beam. The isolation joint can have a first portion, a second portion, and a bridge portion between the first portion and the second portion. The first and second portions of the isolation joint can each have a seam and a void, while the bridge portion can be solid.
摘要翻译：在一个实施例中，微机电装置可以包括基板，梁和隔离接头。梁可以相对于衬底的表面悬挂。隔离接头可以在梁的第一部分和第二部分之间，并且可以具有非线性形状。在另一个实施例中，微机电装置可以包括基板，梁和隔离接头。梁可以相对于衬底的表面悬挂。隔离接头可以在梁的第一部分和第二部分之间。隔离接头可以具有在第一部分和第二部分之间的第一部分，第二部分和桥接部分。隔离接头的第一和第二部分可各自具有接缝和空隙，而桥接部分可以是实心的。

3. 发明授权

US07728339B1 Boundary isolation for microelectromechanical devices 有权
标题翻译：微机电装置的边界隔离
公开(公告)号：US07728339B1
公开(公告)日：2010-06-01
申请号：US10139009
申请日：2002-05-03
申请人： Scott G. Adams , Tim Davis
发明人： Scott G. Adams , Tim Davis
IPC分类号： H01L29/207 , H01L21/00
CPC分类号： B81B3/0086 , B81B2201/045 , G02B26/0833
摘要： A micromechanical structure is described. A region of semiconductor material has a first surface, a second surface opposite to the first surface, and a lateral surface that surrounds the region of semiconductor material. Insulative material covers the first surface and the lateral surface of the region of semiconductor material to provide electrical isolation to the region of semiconductor material by forming a boundary. To form the micromechanical structure, a trench is etched in a semiconductor substrate to surround a region of the semiconductor substrate. A surface of the semiconductor substrate and the trench are oxidized to form a top oxide and a lateral oxide region. A backside of the semiconductor substrate is etched to expose a backside of the region of the semiconductor substrate and a portion of the lateral oxide.
摘要翻译：描述微机械结构。半导体材料的区域具有第一表面，与第一表面相对的第二表面和围绕半导体材料区域的侧表面。绝缘材料覆盖半导体材料区域的第一表面和侧表面，以通过形成边界来提供对半导体材料区域的电隔离。为了形成微机械结构，在半导体衬底中蚀刻沟槽以包围半导体衬底的区域。半导体衬底和沟槽的表面被氧化以形成顶部氧化物和横向氧化物区域。蚀刻半导体衬底的背面以暴露半导体衬底的区域的背面和一部分横向氧化物。

4. 发明授权

US07430909B2 Tri-axis accelerometer 有权
标题翻译：三轴加速度计
公开(公告)号：US07430909B2
公开(公告)日：2008-10-07
申请号：US11600175
申请日：2006-11-16
申请人： Scott G. Adams , Scott A. Miller , June Shen-Epstein , Keith Epstein
发明人： Scott G. Adams , Scott A. Miller , June Shen-Epstein , Keith Epstein
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , G01P15/0802 , G01P15/18 , G01P2015/0828
摘要： In an embodiment of the present invention there is provided a micro-electromechanical (MEMS) accelerometer, including a substrate, a first sensor and a second sensor. The first sensor is configured to measure an acceleration along a first axis parallel to a plane of the substrate. The second sensor is configured to measure an acceleration along an axis perpendicular to the plane of the substrate. The second sensor comprises a first beam, a second beam and a single support structure. The single support structure supports the first and second beams relative to the substrate, wherein the first and second beams circumscribe the first sensor.
摘要翻译：在本发明的一个实施例中，提供了一种包括基板，第一传感器和第二传感器的微机电（MEMS）加速度计。第一传感器被配置为测量沿着平行于衬底的平面的第一轴的加速度。第二传感器被配置成沿垂直于基板的平面的轴测量加速度。第二传感器包括第一梁，第二梁和单个支撑结构。单个支撑结构相对于基板支撑第一和第二光束，其中第一和第二光束围绕第一传感器。

5. 发明授权

US06767614B1 Multiple-level actuators and clamping devices 失效
标题翻译：多级执行器和夹紧装置
公开(公告)号：US06767614B1
公开(公告)日：2004-07-27
申请号：US10021311
申请日：2001-12-19
申请人： Wolfgang M. J. Hofmann , Hercules Neves , Noel C. MacDonald , Scott G. Adams
发明人： Wolfgang M. J. Hofmann , Hercules Neves , Noel C. MacDonald , Scott G. Adams
IPC分类号： B32B300
CPC分类号： B81C1/0015 , B81B2201/033 , B81B2203/0136 , B81C2201/0112 , B81C2201/0132 , B81C2201/0198 , Y10T428/13 , Y10T428/24273 , Y10T428/24562 , Y10T428/24744 , Y10T428/24802
摘要： Improved fabrication processes for microelectromechanical structures, and unique structures fabricated by the improved processes are disclosed. In its simplest form, the fabrication process is a modification of the know SCREAM process, extended and used in such a way as to produce a combined vertical etch and release RIE process, which may be referred to as a “combination etch”. Fabrication of a single-level micromechanical structure using the process of the present invention includes a novel dry etching process to shape and release suspended single crystal silicon elements, the process combining vertical silicon reactive ion etching (Si-RIE) and release etches to eliminate the need to deposit and pattern silicon dioxide mask layers on the sides of suspended structures and to reduce the mechanical stresses in suspended structures caused by deposited silicon dioxide films.
摘要翻译：公开了用于微机电结构的改进的制造工艺和通过改进的工艺制造的独特结构。在其最简单的形式中，制造工艺是对已知SCREAM工艺的修改，扩展并以这样的方式使用，以便产生可被称为“组合蚀刻”的组合垂直蚀刻和释放RIE工艺。使用本发明的方法制造单级微机械结构包括形成和释放悬浮的单晶硅元件的新型干蚀刻工艺，将垂直硅反应离子蚀刻（Si-RIE）和释放蚀刻相组合的工艺消除需要在悬浮结构的两侧沉积并排列二氧化硅掩模层，并降低由沉积的二氧化硅膜引起的悬浮结构中的机械应力。

6. 发明授权

US06239473B1 Trench isolation for micromechanical devices 有权
标题翻译：微机械装置的沟槽隔离
公开(公告)号：US06239473B1
公开(公告)日：2001-05-29
申请号：US09231082
申请日：1999-01-14
申请人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
发明人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
IPC分类号： H01L2984
CPC分类号： H01L21/76224 , B81B2203/0118 , B81B2203/033 , B81C1/00142 , B81C1/00698
摘要： An isolation process which enhances the performance of silicon micromechanical devices incorporates dielectric isolation segments within the silicon microstructure, which is otherwise composed of an interconnected grid of cantilevered beams. A metal layer on top of the beams provides interconnects and also allows contact to the silicon beams, electrically activating the device for motion or transduction. Multiple conduction paths are incorporated through a metal patterning step prior to structure definition. The invention improves manufacturability of previous processes by performing all lithographic patterning steps on flat topographies, and removing complicated metal sputtering steps required of most high aspect ratio processes. With little modification, the invention can be implemented with integrated circuit fabrication sequences for fully integrated devices.
摘要翻译：提高硅微机械器件性能的隔离工艺在硅微结构内部包含介电隔离段，否则由微悬臂梁的互连网格组成。在梁的顶部上的金属层提供互连并且还允许与硅束的接触，电激活装置以进行运动或转导。在结构定义之前，通过金属图案化步骤并入多个导电路径。本发明通过在平面形貌上进行所有平版印刷图案化步骤，以及去除大多数高纵横比工艺所需的复杂金属溅射步骤，从而提高先前工艺的可制造性。通过很少的修改，本发明可以用于完全集成的器件的集成电路制造序列。

7. 发明授权

US06170332B2 Micromechanical accelerometer for automotive applications 有权
标题翻译：用于汽车应用的微机械加速度计
公开(公告)号：US06170332B2
公开(公告)日：2001-01-09
申请号：US09552578
申请日：2000-04-19
申请人： Noel C. MacDonald , Kevin A. Shaw , Scott G. Adams
发明人： Noel C. MacDonald , Kevin A. Shaw , Scott G. Adams
IPC分类号： G01P1508
CPC分类号： G01P15/131 , B81B2201/0235 , B81B2203/051 , B81C1/00619 , B81C2201/0132 , G01P1/006 , G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/0817
摘要： A micromechanical capacitive accelerometer is provided from a single silicon wafer. The basic structure of the micromechanical accelerometer is etched in the wafer to form a released portion in the substrate, and the released and remaining portions of the substrate are coated with metal under conditions sufficient to form a micromechanical capacitive accelerometer. The substrate is preferably etched using reactive-ion etching for at least the first etch step in the process that forms the basic structure, although in another preferred embodiment, all etching is reactive-ion etching. The accelerometer also may comprise a signal-conditioned accelerometer wherein signal-conditioning circuitry is provided on the same wafer from which the accelerometer is formed, and VLSI electronics may be integrated on the same wafer from which the accelerometer is formed. The micromechanical capacitive accelerometer can be used for airbag deployment, active suspension control, active steering control, anti-lock braking, and other control systems requiring accelerometers having high sensitivity, extreme accuracy and resistance to out of plane forces.
摘要翻译：从单个硅晶片提供微机电电容式加速度计。在晶片中蚀刻微机械加速度计的基本结构，以在衬底中形成释放部分，并且在足以形成微机械电容式加速度计的条件下，用金属涂覆衬底的释放和剩余部分。在形成基本结构的工艺中，优选使用反应离子蚀刻对至少第一蚀刻步骤蚀刻衬底，尽管在另一优选实施例中，所有蚀刻都是反应离子蚀刻。加速度计还可以包括信号调节加速度计，其中信号调节电路设置在与其形成加速度计的同一晶片上，并且VLSI电子器件可以集成在形成加速度计的相同晶片上。微机电容加速度计可用于安全气囊部署，主动悬架控制，主动转向控制，防抱死制动以及需要具有高灵敏度，极高精度和抗平面外力的加速度计的其他控制系统。

8. 发明授权

US06342430B1 Trench isolation for micromechanical devices 有权
标题翻译：微机械装置的沟槽隔离
公开(公告)号：US06342430B1
公开(公告)日：2002-01-29
申请号：US09548680
申请日：2000-04-13
申请人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
发明人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
IPC分类号： H01L2176
CPC分类号： H01L21/76224 , B81B2203/0118 , B81B2203/033 , B81C1/00142 , B81C1/00698
摘要： An isolation process which enhances the performance of silicon micromechanical devices incorporates dielectric isolation segments within the silicon microstructure, which is otherwise composed of an interconnected grid of cantilevered beams. A metal layer on top of the beams provides interconnects and also allows contact to the silicon beams, electrically activating the device for motion or transduction. Multiple conduction paths are incorporated through a metal patterning step prior to structure definition. The invention improves manufacturability of previous processes by performing all lithographic patterning steps on flat topographies, and removing complicated metal sputtering steps required of most high aspect ratio processes. With little modification, the invention can be implemented with in grated circuit fabrication sequences for fully integrated devices.
摘要翻译：提高硅微机械器件性能的隔离工艺在硅微结构内部包含介电隔离段，否则由微悬臂梁的互连网格组成。在梁的顶部上的金属层提供互连并且还允许与硅束的接触，电激活装置以进行运动或转导。在结构定义之前，通过金属图案化步骤并入多个导电路径。本发明通过在平面形貌上进行所有平版印刷图案化步骤，以及去除大多数高纵横比工艺所需的复杂金属溅射步骤，从而提高先前工艺的可制造性。通过很少的修改，本发明可以用于完全集成的器件的格栅电路制造顺序。

9. 发明授权

US5914553A Multistable tunable micromechanical resonators 失效
标题翻译：多功能可调谐微机械谐振器
公开(公告)号：US5914553A
公开(公告)日：1999-06-22
申请号：US915648
申请日：1997-08-21
申请人： Scott G. Adams , Yongmei Cindy Wang , Noel C. Macdonald , James S. Thorp
发明人： Scott G. Adams , Yongmei Cindy Wang , Noel C. Macdonald , James S. Thorp
IPC分类号： B81B3/00 , G01P1/00 , G01P15/08 , G01P15/125 , G01P15/135 , H02N1/00
CPC分类号： H02N1/008 , G01P1/006 , G01P15/0891 , G01P15/125 , G01P15/135 , H03H9/02409 , H03H9/02448 , G01P2015/0814
摘要： A multistable tunable electromicromechanical resonator structure incorporates electrostatic actuators which permit modification of the resonant frequency of the structure. The actuators consist of sets of opposed electrode fingers, each set having a multiplicity of spaced, parallel fingers. One set is mounted on a movable portion of the resonator structure and one set is mounted on an adjacent fixed base or substrate, with the fingers in opposed relationship and their adjacent ends spaced apart by a gap. An adjustable bias voltage across the sets of electrodes adjusts the resonant frequency of the movable structure and shifts the structure to a bistable state. Application of an alternating drive signal drives the structure to chaotic oscillation.
摘要翻译：多可调谐的机电谐振器结构包括允许修改结构的谐振频率的静电致动器。致动器由一组相对的电极指组成，每组具有多个间隔开的平行指状物。一组安装在谐振器结构的可移动部分上，一组安装在相邻的固定基座或基板上，手指具有相对的关系，并且其相邻端部间隔开间隔。两组电极之间的可调偏压调节可移动结构的谐振频率，并将结构转移到双稳态。交替驱动信号的应用将结构驱动到混沌振荡。

10. 发明授权

US5610335A Microelectromechanical lateral accelerometer 失效
标题翻译：微机电横向加速度计
公开(公告)号：US5610335A
公开(公告)日：1997-03-11
申请号：US246265
申请日：1994-05-19
申请人： Kevin A. Shaw , Scott G. Adams , Noel C. MacDonald
发明人： Kevin A. Shaw , Scott G. Adams , Noel C. MacDonald
IPC分类号： B60G23/00 , B81B3/00 , B81C1/00 , G01P1/00 , G01P15/08 , G01P15/125 , G01P15/13 , H01L29/84
CPC分类号： G01P15/131 , B81B3/0051 , G01P1/006 , G01P15/0802 , G01P15/125 , G01R33/0286 , B81B2201/0235 , B81B2203/0109 , B81B2203/0136 , G01P2015/0814 , G01P2015/0831
摘要： A microelectromechanical accelerometer having submicron features is fabricated from a single crystal silicon substrate. The accelerometer includes a movable portion incorporating an axial beam carrying laterally-extending high aspect ratio released fingers cantilevered above the floor of a cavity formed in the substrate during the fabrication process. The movable portion is supported by restoring springs having controllable flexibility to vary the resonant frequency of the structure. A multiple-beam structure provides stiffness in the movable portion for accuracy.
摘要翻译：具有亚微米特征的微机电加速计由单晶硅衬底制造。加速度计包括可动部分，该可动部分在制造过程中结合有横向延伸的高纵横比释放指状物的轴向梁，悬挂臂形成在衬底中形成的空腔的地板上。可移动部分由具有可控柔性的恢复弹簧支撑以改变结构的谐振频率。多光束结构提供可移动部分的刚度以获得准确性。

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