专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06767614B1 Multiple-level actuators and clamping devices 失效
标题翻译：多级执行器和夹紧装置
公开(公告)号：US06767614B1
公开(公告)日：2004-07-27
申请号：US10021311
申请日：2001-12-19
申请人： Wolfgang M. J. Hofmann , Hercules Neves , Noel C. MacDonald , Scott G. Adams
发明人： Wolfgang M. J. Hofmann , Hercules Neves , Noel C. MacDonald , Scott G. Adams
IPC分类号： B32B300
CPC分类号： B81C1/0015 , B81B2201/033 , B81B2203/0136 , B81C2201/0112 , B81C2201/0132 , B81C2201/0198 , Y10T428/13 , Y10T428/24273 , Y10T428/24562 , Y10T428/24744 , Y10T428/24802
摘要： Improved fabrication processes for microelectromechanical structures, and unique structures fabricated by the improved processes are disclosed. In its simplest form, the fabrication process is a modification of the know SCREAM process, extended and used in such a way as to produce a combined vertical etch and release RIE process, which may be referred to as a “combination etch”. Fabrication of a single-level micromechanical structure using the process of the present invention includes a novel dry etching process to shape and release suspended single crystal silicon elements, the process combining vertical silicon reactive ion etching (Si-RIE) and release etches to eliminate the need to deposit and pattern silicon dioxide mask layers on the sides of suspended structures and to reduce the mechanical stresses in suspended structures caused by deposited silicon dioxide films.
摘要翻译：公开了用于微机电结构的改进的制造工艺和通过改进的工艺制造的独特结构。在其最简单的形式中，制造工艺是对已知SCREAM工艺的修改，扩展并以这样的方式使用，以便产生可被称为“组合蚀刻”的组合垂直蚀刻和释放RIE工艺。使用本发明的方法制造单级微机械结构包括形成和释放悬浮的单晶硅元件的新型干蚀刻工艺，将垂直硅反应离子蚀刻（Si-RIE）和释放蚀刻相组合的工艺消除需要在悬浮结构的两侧沉积并排列二氧化硅掩模层，并降低由沉积的二氧化硅膜引起的悬浮结构中的机械应力。

2. 发明授权

US06239473B1 Trench isolation for micromechanical devices 有权
标题翻译：微机械装置的沟槽隔离
公开(公告)号：US06239473B1
公开(公告)日：2001-05-29
申请号：US09231082
申请日：1999-01-14
申请人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
发明人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
IPC分类号： H01L2984
CPC分类号： H01L21/76224 , B81B2203/0118 , B81B2203/033 , B81C1/00142 , B81C1/00698
摘要： An isolation process which enhances the performance of silicon micromechanical devices incorporates dielectric isolation segments within the silicon microstructure, which is otherwise composed of an interconnected grid of cantilevered beams. A metal layer on top of the beams provides interconnects and also allows contact to the silicon beams, electrically activating the device for motion or transduction. Multiple conduction paths are incorporated through a metal patterning step prior to structure definition. The invention improves manufacturability of previous processes by performing all lithographic patterning steps on flat topographies, and removing complicated metal sputtering steps required of most high aspect ratio processes. With little modification, the invention can be implemented with integrated circuit fabrication sequences for fully integrated devices.
摘要翻译：提高硅微机械器件性能的隔离工艺在硅微结构内部包含介电隔离段，否则由微悬臂梁的互连网格组成。在梁的顶部上的金属层提供互连并且还允许与硅束的接触，电激活装置以进行运动或转导。在结构定义之前，通过金属图案化步骤并入多个导电路径。本发明通过在平面形貌上进行所有平版印刷图案化步骤，以及去除大多数高纵横比工艺所需的复杂金属溅射步骤，从而提高先前工艺的可制造性。通过很少的修改，本发明可以用于完全集成的器件的集成电路制造序列。

3. 发明授权

US06170332B2 Micromechanical accelerometer for automotive applications 有权
标题翻译：用于汽车应用的微机械加速度计
公开(公告)号：US06170332B2
公开(公告)日：2001-01-09
申请号：US09552578
申请日：2000-04-19
申请人： Noel C. MacDonald , Kevin A. Shaw , Scott G. Adams
发明人： Noel C. MacDonald , Kevin A. Shaw , Scott G. Adams
IPC分类号： G01P1508
CPC分类号： G01P15/131 , B81B2201/0235 , B81B2203/051 , B81C1/00619 , B81C2201/0132 , G01P1/006 , G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/0817
摘要： A micromechanical capacitive accelerometer is provided from a single silicon wafer. The basic structure of the micromechanical accelerometer is etched in the wafer to form a released portion in the substrate, and the released and remaining portions of the substrate are coated with metal under conditions sufficient to form a micromechanical capacitive accelerometer. The substrate is preferably etched using reactive-ion etching for at least the first etch step in the process that forms the basic structure, although in another preferred embodiment, all etching is reactive-ion etching. The accelerometer also may comprise a signal-conditioned accelerometer wherein signal-conditioning circuitry is provided on the same wafer from which the accelerometer is formed, and VLSI electronics may be integrated on the same wafer from which the accelerometer is formed. The micromechanical capacitive accelerometer can be used for airbag deployment, active suspension control, active steering control, anti-lock braking, and other control systems requiring accelerometers having high sensitivity, extreme accuracy and resistance to out of plane forces.
摘要翻译：从单个硅晶片提供微机电电容式加速度计。在晶片中蚀刻微机械加速度计的基本结构，以在衬底中形成释放部分，并且在足以形成微机械电容式加速度计的条件下，用金属涂覆衬底的释放和剩余部分。在形成基本结构的工艺中，优选使用反应离子蚀刻对至少第一蚀刻步骤蚀刻衬底，尽管在另一优选实施例中，所有蚀刻都是反应离子蚀刻。加速度计还可以包括信号调节加速度计，其中信号调节电路设置在与其形成加速度计的同一晶片上，并且VLSI电子器件可以集成在形成加速度计的相同晶片上。微机电容加速度计可用于安全气囊部署，主动悬架控制，主动转向控制，防抱死制动以及需要具有高灵敏度，极高精度和抗平面外力的加速度计的其他控制系统。

4. 发明授权

US06342430B1 Trench isolation for micromechanical devices 有权
标题翻译：微机械装置的沟槽隔离
公开(公告)号：US06342430B1
公开(公告)日：2002-01-29
申请号：US09548680
申请日：2000-04-13
申请人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
发明人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
IPC分类号： H01L2176
CPC分类号： H01L21/76224 , B81B2203/0118 , B81B2203/033 , B81C1/00142 , B81C1/00698
摘要： An isolation process which enhances the performance of silicon micromechanical devices incorporates dielectric isolation segments within the silicon microstructure, which is otherwise composed of an interconnected grid of cantilevered beams. A metal layer on top of the beams provides interconnects and also allows contact to the silicon beams, electrically activating the device for motion or transduction. Multiple conduction paths are incorporated through a metal patterning step prior to structure definition. The invention improves manufacturability of previous processes by performing all lithographic patterning steps on flat topographies, and removing complicated metal sputtering steps required of most high aspect ratio processes. With little modification, the invention can be implemented with in grated circuit fabrication sequences for fully integrated devices.
摘要翻译：提高硅微机械器件性能的隔离工艺在硅微结构内部包含介电隔离段，否则由微悬臂梁的互连网格组成。在梁的顶部上的金属层提供互连并且还允许与硅束的接触，电激活装置以进行运动或转导。在结构定义之前，通过金属图案化步骤并入多个导电路径。本发明通过在平面形貌上进行所有平版印刷图案化步骤，以及去除大多数高纵横比工艺所需的复杂金属溅射步骤，从而提高先前工艺的可制造性。通过很少的修改，本发明可以用于完全集成的器件的格栅电路制造顺序。

5. 发明授权

US5610335A Microelectromechanical lateral accelerometer 失效
标题翻译：微机电横向加速度计
公开(公告)号：US5610335A
公开(公告)日：1997-03-11
申请号：US246265
申请日：1994-05-19
申请人： Kevin A. Shaw , Scott G. Adams , Noel C. MacDonald
发明人： Kevin A. Shaw , Scott G. Adams , Noel C. MacDonald
IPC分类号： B60G23/00 , B81B3/00 , B81C1/00 , G01P1/00 , G01P15/08 , G01P15/125 , G01P15/13 , H01L29/84
CPC分类号： G01P15/131 , B81B3/0051 , G01P1/006 , G01P15/0802 , G01P15/125 , G01R33/0286 , B81B2201/0235 , B81B2203/0109 , B81B2203/0136 , G01P2015/0814 , G01P2015/0831
摘要： A microelectromechanical accelerometer having submicron features is fabricated from a single crystal silicon substrate. The accelerometer includes a movable portion incorporating an axial beam carrying laterally-extending high aspect ratio released fingers cantilevered above the floor of a cavity formed in the substrate during the fabrication process. The movable portion is supported by restoring springs having controllable flexibility to vary the resonant frequency of the structure. A multiple-beam structure provides stiffness in the movable portion for accuracy.
摘要翻译：具有亚微米特征的微机电加速计由单晶硅衬底制造。加速度计包括可动部分，该可动部分在制造过程中结合有横向延伸的高纵横比释放指状物的轴向梁，悬挂臂形成在衬底中形成的空腔的地板上。可移动部分由具有可控柔性的恢复弹簧支撑以改变结构的谐振频率。多光束结构提供可移动部分的刚度以获得准确性。

6. 发明授权

US5563343A Microelectromechanical lateral accelerometer 失效
标题翻译：微机电横向加速度计
公开(公告)号：US5563343A
公开(公告)日：1996-10-08
申请号：US67264
申请日：1993-05-26
申请人： Kevin A. Shaw , Scott G. Adams , Noel C. MacDonald
发明人： Kevin A. Shaw , Scott G. Adams , Noel C. MacDonald
IPC分类号： B81B3/00 , B81C1/00 , G01P1/00 , G01P15/08 , G01P15/125 , G01P15/13
CPC分类号： G01P15/131 , B81B3/0051 , G01P1/006 , G01P15/0802 , G01P15/125 , G01R33/0286 , B81B2201/0235 , B81B2203/0109 , B81B2203/0136 , G01P2015/0814 , G01P2015/0831
摘要： A microelectromechanical accelerometer having submicron features is fabricated from a single crystal silicon substrate. The accelerometer includes a movable portion incorporating an axial beam carrying laterally-extending high aspect ratio released fingers cantilevered above the floor of a cavity formed in the substrate during the fabrication process. The movable portion is supported by restoring springs having controllable flexibility to vary the resonant frequency of the structure. A multiple-beam structure provides stiffness in the movable portion for accuracy.
摘要翻译：具有亚微米特征的微机电加速计由单晶硅衬底制造。加速度计包括可动部分，该可动部分在制造过程中结合有横向延伸的高纵横比释放指状物的轴向梁，悬挂臂形成在衬底中形成的空腔的地板上。可移动部分由具有可控柔性的恢复弹簧支撑以改变结构的谐振频率。多光束结构提供可移动部分的刚度以获得准确性。

7. 发明授权

US5640133A Capacitance based tunable micromechanical resonators 失效
标题翻译：基于电容的可调谐微机械谐振器
公开(公告)号：US5640133A
公开(公告)日：1997-06-17
申请号：US494024
申请日：1995-06-23
申请人： Noel C. MacDonald , Fred M. Bertsch , Kevin A. Shaw , Scott G. Adams
发明人： Noel C. MacDonald , Fred M. Bertsch , Kevin A. Shaw , Scott G. Adams
IPC分类号： H03H9/125 , H02N1/00 , H03H9/02 , H03H9/205 , H03H9/24 , H03H9/46
CPC分类号： H03H9/02425 , H02N1/008 , H03H9/02417 , H03H9/46 , H03H2009/02496
摘要： A tunable electromicromechanical resonator structure incorporates an electrostatic actuator which permits reduction or enhancement of the resonant frequency of the structure. The actuator consists of two sets of opposed electrode fingers, each set having a multiplicity of spaced, parallel fingers. One set is mounted on a movable portion of the resonator structure and one set is mounted on an adjacent fixed base on substrate, with the fingers in opposed relationship and their adjacent ends spaced apart by a gap. An adjustable bias voltage across the sets of electrodes adjusts the resonant frequency of the movable structure.
摘要翻译：可调电动机械谐振器结构包括静电致动器，其允许减小或增强结构的谐振频率。致动器由两组相对的电极指组成，每组具有多个间隔开的平行指状物。一组安装在谐振器结构的可移动部分上，一组安装在基板上的相邻的固定基座上，指状物处于相对关系，并且其相邻端部间隔开间隙。两组电极之间的可调偏压调节可移动结构的谐振频率。

8. 发明授权

US6093330A Microfabrication process for enclosed microstructures 失效
标题翻译：封闭微结构的微加工工艺
公开(公告)号：US6093330A
公开(公告)日：2000-07-25
申请号：US867060
申请日：1997-06-02
申请人： John M. Chong , Scott G. Adams , Noel C. MacDonald , Kevin A. Shaw
发明人： John M. Chong , Scott G. Adams , Noel C. MacDonald , Kevin A. Shaw
IPC分类号： B81B3/00 , H01L21/302
CPC分类号： B81C1/0015 , B81C1/00047 , B81C1/00071 , B81B2203/0338 , B81C2201/053 , B81C2203/0136
摘要： A single-mask process for fabricating enclosed, micron-scale subsurface cavities in a single crystal silicon substrate includes the steps of patterning the substrate to form vias, etching the cavities through the vias, and sealing the vias. Single cavities of any configuration may be produced, but a preferred embodiment includes closely spaced cavity pairs. The cavities may be separated by a thin membrane, or may be merged to form an enlarged merged cavity having an overhanging bar to which electrical leads may be connected. A three-mask process for fabricating enclosed cavities with electrical contacts and electrical connections is also disclosed.
摘要翻译：用于在单晶硅衬底中制造封闭的微米级次表面空穴的单掩模工艺包括以下步骤：使衬底图案化以形成通孔，通过通孔蚀刻空腔，并密封通孔。可以制造任何构造的单个空腔，但是优选实施例包括紧密间隔的空腔对。空腔可以由薄膜分离，或者可以被合并以形成具有可以连接电引线的悬伸杆的扩大的合并腔。还公开了一种用于制造具有电触点和电连接的封闭腔的三掩模工艺。

9. 发明授权

US07682956B2 Three-dimensional metal microfabrication process and devices produced thereby 有权
标题翻译：三维金属微细加工工艺及其制造的装置
公开(公告)号：US07682956B2
公开(公告)日：2010-03-23
申请号：US11445067
申请日：2006-06-01
申请人： Masaru P. Rao , Marco F. Aimi , Noel C. MacDonald
发明人： Masaru P. Rao , Marco F. Aimi , Noel C. MacDonald
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： C23F4/00 , B81B2201/042 , B81B2203/033 , B81C1/00126 , B81C2201/0132 , Y10T29/49117
摘要： The present invention relates, in general, to a method for three-dimensional (3D) microfabrication of complex, high aspect ratio structures with arbitrary surface height profiles in metallic materials, and to devices fabricated in accordance with this process. The method builds upon anisotropic deep etching methods for metallic materials previously developed by the inventors by enabling simplified realization of complex, non-prismatic structural geometries composed of multiple height levels and sloping and/or non-planar surface profiles. The utility of this approach is demonstrated in the fabrication of a sloping electrode structure intended for application in bulk micromachined titanium micromirror devices, however such a method could find use in the fabrication of any number of other microactuator, microsensor, microtransducer, or microstructure devices as well.
摘要翻译：本发明一般涉及用于金属材料中具有任意表面高度分布的复合高纵横比结构的三维（3D）微细加工方法，以及根据该方法制造的器件。该方法基于由本发明人先前开发的金属材料的各向异性深蚀刻方法，其通过使得能够简化实现由多个高度级别和倾斜和/或非平面表面轮廓组成的复杂的非棱柱结构几何形状。在制造用于体积微加工的钛微镜器件中的倾斜电极结构的过程中证明了这种方法的实用性，然而这种方法可用于制造任何数量的其它微型致动器，微传感器，微传感器或微结构器件，如好。

10. 发明授权

US07022617B2 Small scale wires with microelectromechanical devices 有权
标题翻译：小型电线与微机电装置
公开(公告)号：US07022617B2
公开(公告)日：2006-04-04
申请号：US10606812
申请日：2003-06-26
申请人： Kanakasabapathi Subramanian , Noel C. MacDonald
发明人： Kanakasabapathi Subramanian , Noel C. MacDonald
IPC分类号： H01L21/461
CPC分类号： B81C1/00142 , B81B2203/0361 , B81C1/00071 , B81C1/00111 , B81C2201/0112 , Y10S977/70 , Y10S977/762
摘要： A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.
摘要翻译：蚀刻和钝化化学物质之间的过程循环，以产生转变成小结构的粗糙侧壁。在一个实施例中，使用掩模来限定单晶硅晶片中的线。该过程在对应于循环的线的侧壁上产生波纹。在一个实施例中，线被氧化以形成对应于每个纹波的硅线。在另一个实施方案中去除氧化物以形成从微尖端到光线阵列的结构。通过氧化相邻的波纹侧壁形成流体通道。同样的掩模也用于形成MEMS器件的其他结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式