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    • 1. 发明授权
    • Micro-electromechanical system devices
    • 微机电系统设备
    • US08319254B2
    • 2012-11-27
    • US13027209
    • 2011-02-14
    • Scott G. AdamsAndrew J. MinnickCharles W. BlackmerMollie K. Devoe
    • Scott G. AdamsAndrew J. MinnickCharles W. BlackmerMollie K. Devoe
    • H01L29/74
    • B81B3/0008B81B2201/0235B81B2207/07G01P15/0802H01H59/0009H01L29/747H01L29/87
    • A micro-electromechanical system (MEMS) device includes a substrate, a first beam, a second beam, and a third beam. The first beam includes first and second portions separated by an isolation joint. The first and second portions each comprise a semiconductor and a first dielectric layer. An electrically conductive trace is mechanically coupled to the first beam and electrically coupled to the second portion's semiconductor but not the first portion's semiconductor. The second beam includes a second dielectric layer. The profile of each of the first second, and third beams has been formed by a dry etch. A cavity separates a surface of the substrate from the first, second, and third beams. The cavity has been formed by a dry etch. A side wall of each of the first, second, and third beams has substantially no dielectric layer disposed thereon, and the dielectric layer has been removed by a vapor-phase etch.
    • 微机电系统(MEMS)装置包括基板,第一光束,第二光束和第三光束。 第一梁包括由隔离接头隔开的第一和第二部分。 第一和第二部分各自包括半导体和第一介电层。 导电迹线机械耦合到第一光束并且电耦合到第二部分的半导体,但不耦合到第一部分的半导体。 第二光束包括第二电介质层。 通过干蚀刻形成第一和第三光束中的每一个的轮廓。 空腔将基板的表面与第一,第二和第三梁分离。 通过干蚀刻形成空腔。 第一,第二和第三光束中的每一个的侧壁基本上没有设置在其上的电介质层,并且通过气相蚀刻去除介电层。