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1. 发明授权

US08551991B2 1,2,3,4-tetrahydroquinoxaline derivative having glucocorticoid receptor binding activity 有权
标题翻译：具有糖皮质激素受体结合活性的1,2,3,4-四氢喹喔啉衍生物
公开(公告)号：US08551991B2
公开(公告)日：2013-10-08
申请号：US12225010
申请日：2007-03-14
申请人： Mamoru Matsuda , Toshiyuki Mori , Kenji Kawashima , Minoru Yamamoto , Masatomo Kato , Miwa Takai , Masato Nagatsuka , Sachiko Kobayashi
发明人： Mamoru Matsuda , Toshiyuki Mori , Kenji Kawashima , Minoru Yamamoto , Masatomo Kato , Miwa Takai , Masato Nagatsuka , Sachiko Kobayashi
IPC分类号： A61K31/535 , A61K31/44 , A01N43/40
CPC分类号： C07D241/46 , C07D241/44 , C07D401/12 , C07D401/14 , C07D405/12 , C07D409/12 , C07D409/14 , C07D413/12 , C07D417/12 , C07D417/14
摘要： An object of the present invention is to synthesize a novel 1,2,3,4-tetrahydroquinoxaline derivative represented by formula (1) and to find a pharmacological action of the derivative. In the formula, the R1 represents a halogen, an alkyl, cycloalkyl, aryl or heterocyclic group, or the like; p represents 0 to 5; R2 represents a halogen, an alkyl, hydroxyl or alkoxy group, or the like; q represents 0 to 2; R3 represents hydrogen, an alkyl, alkenyl, alkylcarbonyl or arylcarbonyl group, or the like; R4 and R5 independently represent hydrogen, a halogen, an alkyl, alkenyl, alkynyl, cycloalkyl, aryl or heterocyclic group, or the like; R6 represents hydrogen, an alkyl, alkenyl, alkynyl, cycloalkyl, aryl or heterocyclic group, or the like; A represents an alkylene; R7 represents OR8, NR8R9, SR8, S(O)R8, S(O)2R8; and X represents O or S.
摘要翻译：本发明的目的是合成由式（1）表示的新型1,2,3,4-四氢喹喔啉衍生物，并找到该衍生物的药理学作用。在该式中，R 1表示卤素，烷基，环烷基，芳基或杂环基等; p表示0〜5; R2表示卤素，烷基，羟基或烷氧基等; q表示0〜2; R3表示氢，烷基，烯基，烷基羰基或芳基羰基等; R4和R5独立地表示氢，卤素，烷基，烯基，炔基，环烷基，芳基或杂环基等; R6表示氢，烷基，烯基，炔基，环烷基，芳基或杂环基等; A表示亚烷基; R 7表示OR 8，NR 8 R 9，SR 8，S（O）R 8，S（O）而X代表O或S.

2. 发明申请

US20110275632A1 Method for preventing or treating a disease related to the glucocorticoid receptor 失效
标题翻译：预防或治疗与糖皮质激素受体有关的疾病的方法
公开(公告)号：US20110275632A1
公开(公告)日：2011-11-10
申请号：US13135765
申请日：2011-07-14
申请人： Mamoru MATSUDA , Masato NAGATSUKA , Toshiyuki MORI , Sachiko KOBAYASHI , Masatomo KATO , Miwa TAKAI
发明人： Mamoru MATSUDA , Masato NAGATSUKA , Toshiyuki MORI , Sachiko KOBAYASHI , Masatomo KATO , Miwa TAKAI
IPC分类号： A61K31/5377 , A61K31/47 , A61P29/00 , A61P3/00 , A61P27/02 , A61P37/08 , A61P25/00 , A61P9/00 , A61P43/00 , A61K31/4709 , A61P37/06
CPC分类号： C07D401/12 , C07D215/14 , C07D405/12 , C07D409/12 , C07D409/14 , C07D417/12
摘要： A method for preventing or treating a disease related to the glucocorticoid receptor involving administering a pharmacologically effective amount of a 1,2-dihydroquinoline compound.
摘要翻译：一种预防或治疗涉及糖皮质激素受体的疾病的方法，包括施用药理学有效量的1,2-二氢喹啉化合物。

3. 发明授权

US08008496B2 1,2-dihydroquinoline derivative having substituted phenylchalcogeno lower alkyl group and ester-introduced phenyl group as substituents 有权
标题翻译：具有取代的苯基硫代低级烷基和酯引入的苯基作为取代基的1,2-二氢喹啉衍生物
公开(公告)号：US08008496B2
公开(公告)日：2011-08-30
申请号：US12312392
申请日：2007-11-14
申请人： Mamoru Matsuda , Masato Nagatsuka , Toshiyuki Mori , Sachiko Kobayashi , Masatomo Kato , Miwa Takai
发明人： Mamoru Matsuda , Masato Nagatsuka , Toshiyuki Mori , Sachiko Kobayashi , Masatomo Kato , Miwa Takai
IPC分类号： C07D215/38
CPC分类号： C07D401/12 , C07D215/14 , C07D405/12 , C07D409/12 , C07D409/14 , C07D417/12
摘要： The compounds represented in general formula (1) and a salt thereof are useful for glucocorticoid receptor modulator. The R1 represents a hydrogen atom or a lower alkyl group; R2 represents a hydrogen atom or a lower alkyl group; R3 and R4 may be the same or different and represent a hydrogen atom or a lower alkyl group; R5 represents a hydrogen atom or a lower alkyl group; R6 represents a halogen atom, a lower alkyl group, a hydroxy group, a lower alkoxy group or a nitro group; X represents —C(O)—, —C(O)NR8—, —S(O)2— and the like; R7 and/or R8 may be the same or different and represent a hydrogen atom, a lower alkyl group which may have a substituent, an aryl group which may have a substituent, a heterocyclic group which may have a substituent, a lower alkoxy group which may have a substituent and the like; Y represents a lower alkylene group; Z represents a chalcogen atom; and P represents 0, 1, 2 or 3.
摘要翻译：通式（1）表示的化合物及其盐可用于糖皮质激素受体调节剂。 R1表示氢原子或低级烷基; R2表示氢原子或低级烷基; R 3和R 4可以相同或不同，表示氢原子或低级烷基; R5表示氢原子或低级烷基; R6表示卤素原子，低级烷基，羟基，低级烷氧基或硝基; X表示-C（O） - ， - C（O）NR 8 - ， - S（O）2等） R 7和/或R 8可以相同或不同，表示氢原子，可以具有取代基的低级烷基，可以具有取代基的芳基，可以具有取代基的杂环基，低级烷氧基可以具有取代基等; Y表示低级亚烷基; Z表示硫属原子; P表示0,1,2或3。

4. 发明申请

US20100056504A1 NOVEL 1,2-DIHYDROQUINOLINE DERIVATIVE HAVING SUBSTITUTED PHENYLCHALCOGENO LOWER ALKYL GROUP AND ESTER- INTRODUCED PHENYL GROUP AS SUBSTITUENTS 有权
标题翻译：具有取代的苯乙烯基低级烷基的新的1,2-二氢喹啉衍生物和引入的苯基作为取代基
公开(公告)号：US20100056504A1
公开(公告)日：2010-03-04
申请号：US12312392
申请日：2007-11-14
申请人： Mamoru Matsuda , Masato Nagatsuka , Toshiyuki Mori , Sachiko Kobayashi , Masatomo Kato , Miwa Takai
发明人： Mamoru Matsuda , Masato Nagatsuka , Toshiyuki Mori , Sachiko Kobayashi , Masatomo Kato , Miwa Takai
IPC分类号： A61K31/541 , C07D279/06 , C07D413/12 , C07D215/38 , A61K31/47 , A61K31/5377 , A61P25/00
CPC分类号： C07D401/12 , C07D215/14 , C07D405/12 , C07D409/12 , C07D409/14 , C07D417/12
摘要： The compounds represented in general formula (1) and a salt thereof are useful for glucocorticoid receptor modulator. The R1 represents a hydrogen atom or a lower alkyl group; R2 represents a hydrogen atom or a lower alkyl group; R3 and R4 may be the same or different and represent a hydrogen atom or a lower alkyl group; R5 represents a hydrogen atom or a lower alkyl group; R6 represents a halogen atom, a lower alkyl group, a hydroxy group, a lower alkoxy group or a nitro group; X represents —C(O)—, —C(O)NR8—, —S(O)2— and the like; R7 and/or R8 may be the same or different and represent a hydrogen atom, a lower alkyl group which may have a substituent, an aryl group which may have a substituent, a heterocyclic group which may have a substituent, a lower alkoxy group which may have a substituent and the like; Y represents a lower alkylene group; Z represents a chalcogen atom; and P represents 0, 1, 2 or 3.
摘要翻译：通式（1）表示的化合物及其盐可用于糖皮质激素受体调节剂。 R1表示氢原子或低级烷基; R2表示氢原子或低级烷基; R 3和R 4可以相同或不同，表示氢原子或低级烷基; R5表示氢原子或低级烷基; R6表示卤素原子，低级烷基，羟基，低级烷氧基或硝基; X表示-C（O） - ， - C（O）NR 8 - ， - S（O）2等） R 7和/或R 8可以相同或不同，表示氢原子，可以具有取代基的低级烷基，可以具有取代基的芳基，可以具有取代基的杂环基，低级烷氧基可以具有取代基等; Y表示低级亚烷基; Z表示硫属原子; P表示0,1,2或3。

5. 发明申请

US20080098341A1 DESIGN LAYOUT GENERATING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUITS 失效
标题翻译：用于半导体集成电路的设计布局生成方法
公开(公告)号：US20080098341A1
公开(公告)日：2008-04-24
申请号：US11874601
申请日：2007-10-18
申请人： Sachiko KOBAYASHI , Suigen KYOH
发明人： Sachiko KOBAYASHI , Suigen KYOH
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： A design layout generating method for generating a design pattern of a semiconductor integrated circuit is disclosed. This method comprises modifying a first modification area extracted from a design layout by a first modifying method, and modifying a second modification area extracted from the design layout so as to include the first modification area by a second modifying method on the basis of a pattern modifying guideline calculated from at least a partial design layout in the second modification area.
摘要翻译：公开了一种用于产生半导体集成电路的设计图案的设计布局生成方法。该方法包括：通过第一修改方法修改从设计布局提取的第一修改区域，以及修改从设计布局提取的第二修改区域，以便通过基于模式修改的第二修改方法来包括第一修改区域从第二修改区域中的至少部分设计布局计算出的准则。

6. 发明申请

US20070124718A1 Mask manufacturing system, mask data creating method and manufacturing method of semiconductor device 失效
标题翻译：掩模制造系统，掩模数据创建方法和半导体器件的制造方法
公开(公告)号：US20070124718A1
公开(公告)日：2007-05-31
申请号：US11440086
申请日：2006-05-25
申请人： Sachiko Kobayashi , Toshiya Kotani
发明人： Sachiko Kobayashi , Toshiya Kotani
IPC分类号： G06F17/50
CPC分类号： G03F1/68 , G03F1/36
摘要： A mask manufacturing system and a mask data creating method reusing data for processing information and environment in the past to reduce a photomask developing period, and a manufacturing method of a semiconductor device are disclosed. According to one aspect of the present invention, it is provided a mask manufacturing system comprising a storage device storing processing data for semiconductor integrated circuits processed in the past, a plurality of operation processing modules, a module selecting section selecting at least one operation processing modules, an optical proximity effect correction section executing optical proximity effect correction to a processing object data and generating a correction data by utilizing past correction information applied for a stored data equivalent to the processing object data, a converting section converting the processing object data into mask data, and a drawing system drawing a mask pattern based on the mask data.
摘要翻译：掩模制造系统和掩模数据创建方法重复利用用于处理信息和环境的数据以减少光掩模生长期，以及半导体器件的制造方法。根据本发明的一个方面，提供了一种掩模制造系统，包括存储用于过去处理的半导体集成电路的处理数据的存储装置，多个操作处理模块，模块选择部分，其选择至少一个操作处理模块光学接近效应校正部分，对处理对象数据执行光学邻近效应校正，并通过利用应用于与处理对象数据相当的存储数据的过去校正信息产生校正数据;转换部分，将处理对象数据转换成掩模数据以及基于掩模数据绘制掩模图案的绘图系统。

7. 发明申请

US20120246601A1 PATTERN CORRECTING METHOD, MASK FORMING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：图案校正方法，掩模形成方法和制造半导体器件的方法
公开(公告)号：US20120246601A1
公开(公告)日：2012-09-27
申请号：US13237435
申请日：2011-09-20
申请人： Masanari KAJIWARA , Toshiya KOTANI , Sachiko KOBAYASHI , Hiromitsu MASHITA , Fumiharu NAKAJIMA
发明人： Masanari KAJIWARA , Toshiya KOTANI , Sachiko KOBAYASHI , Hiromitsu MASHITA , Fumiharu NAKAJIMA
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/70 , G03F7/70441
摘要： A pattern correcting method of an embodiment computes a distribution of pattern coverages on a design layout of a circuit pattern in the vicinity of a position that becomes an error pattern in a case where an on-substrate pattern is formed. Then, an area on the design layout in which a difference in the distribution of the pattern coverages becomes small by adding an addition pattern is set as an addition area. Next, addition pattern candidates to be added to the addition area are generated, an addition pattern to be added to the design layout is selected from the candidates on the basis of a predetermined selection criterion, and the addition pattern is added to the addition area.
摘要翻译：实施例的图案校正方法在形成有衬底图案的情况下，在成为误差图案的位置附近的电路图案的设计布局上计算图案覆盖率的分布。然后，通过添加加法图案，设置图案覆盖物的分布差异变小的设计布局上的区域作为附加区域。接下来，生成要添加到相加区域的添加模式候选，并根据预定的选择标准从候选中选择要添加到设计布局的添加模式，并将添加模式添加到添加区域。

8. 发明申请

US20120198396A1 METHOD OF OPTIMIZING SEMICONDUCTOR DEVICE MANUFACTURING PROCESS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER READABLE MEDIUM 审中-公开
标题翻译：优化半导体器件制造工艺的方法，制造半导体器件的方法和非电子计算机可读介质
公开(公告)号：US20120198396A1
公开(公告)日：2012-08-02
申请号：US13237854
申请日：2011-09-20
申请人： Masanari KAJIWARA , Sachiko Kobayashi , Satoshi Tanaka , Kazuhiro Takahata , Shigeki Nojima , Toshiya Kotani , Shimon Maeda
发明人： Masanari KAJIWARA , Sachiko Kobayashi , Satoshi Tanaka , Kazuhiro Takahata , Shigeki Nojima , Toshiya Kotani , Shimon Maeda
IPC分类号： G06F17/50
CPC分类号： H01L22/20 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of optimizing a semiconductor device manufacturing process according to an embodiment is a method of optimizing a semiconductor device manufacturing process in which a pattern based on circuit design is formed. The method of optimizing a semiconductor device manufacturing process according to the embodiment includes: at the time of calculation of a statistic amount based on a distribution of differences at a plurality of sites between a pattern formed by a first exposing apparatus in a first condition and a pattern formed by a second exposing apparatus in a second condition, calculating the statistic amount after applying weighting to the differences based on information on an electrical characteristic; and repeating the calculating with the second condition being changed, and selecting an condition in which the total sum becomes a minimum or equal to or less than a standard value as an optimized condition of the second exposing apparatus.
摘要翻译：根据实施例的优化半导体器件制造工艺的方法是优化其中形成基于电路设计的图案的半导体器件制造工艺的方法。根据实施例的半导体器件制造方法的优化方法包括：在基于在第一状态下由第一曝光装置形成的图案与第一状态之间的多个位置处的差异的分布的统计量的计算时，在第二状态下由第二曝光装置形成的图案，基于关于电特性的信息对所述差进行加权计算后的统计量; 并重复进行第二条件的计算，并且选择总和变为最小或等于或小于标准值的条件作为第二曝光装置的优化条件。

9. 发明授权

US07917871B2 Method and program for pattern data generation using a modification guide 有权
标题翻译：使用修改指南生成图形数据的方法和程序
公开(公告)号：US07917871B2
公开(公告)日：2011-03-29
申请号：US12180244
申请日：2008-07-25
申请人： Sachiko Kobayashi , Suigen Kyoh , Shimon Maeda
发明人： Sachiko Kobayashi , Suigen Kyoh , Shimon Maeda
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： A pattern data generation method of an aspect of the present invention, the method includes creating at least one modification guide to modify a modification target point contained in pattern data, evaluating the modification guides on the basis of an evaluation item, the evaluation item being a change in the shape of the pattern data for the modification target point caused by the modification based on the modification guides or a change in electric characteristics of a pattern formed in accordance with the pattern data, selecting a predetermined modification guide from among the modification guides on the basis of the evaluation result of the modification guides, and modifying the modification target point in accordance with the selected modification guide.
摘要翻译：本发明的一个方式的图形数据生成方法，该方法包括创建至少一个修改指南，以修改包含在图案数据中的修改目标点，基于评估项目评估修改指南，评估项目是基于修改引导引起的修改目标点的图案数据的形状的改变或根据图案数据形成的图案的电特性的变化，从修改引导件中选择预定的修改指南修改指南的评估结果的基础，以及根据所选择的修改指南修改修改目标点。

10. 发明申请

US20080216045A1 MASK DATA PROCESSING METHOD FOR OPTIMIZING HIERARCHICAL STRUCTURE 失效
标题翻译：用于优化分层结构的掩模数据处理方法
公开(公告)号：US20080216045A1
公开(公告)日：2008-09-04
申请号：US11945697
申请日：2007-11-27
申请人： Sachiko KOBAYASHI , Toshiya Kotani , Shinichiroh Ohki , Hirotaka Ichikawa
发明人： Sachiko KOBAYASHI , Toshiya Kotani , Shinichiroh Ohki , Hirotaka Ichikawa
IPC分类号： G06F17/50
CPC分类号： G06F17/5068
摘要： Disclosed is a mask data processing method of correcting a hierarchical structure. In the case that in design data having a hierarchical structure including a plurality of cells each having a design pattern, when the total number of graphic forms or the total edge length of a design pattern on which the calculation of mask data processing is to be executed, the amount of calculation to be executed, or the expansion degree presumably becomes equal to or larger than a predetermined threshold value if the calculation of the mask data processing is executed on the design data having the initial hierarchical structure, the hierarchical structure is corrected. This correction is performed to reduce the total number of graphic forms or the total edge length of the design pattern on which the calculation is to be executed, the amount of calculation to be executed, of the expansion degree.
摘要翻译：公开了一种校正层次结构的掩模数据处理方法。在具有包括多个单元的设计数据的设计数据中，每个单元均具有设计图案时，当要执行掩模数据处理的计算的设计图案的总数或总边缘长度时如果对具有初始层次结构的设计数据执行掩模数据处理的计算，则修正了要执行的计算量或扩展度等于或大于预定阈值等于或大于预定阈值。执行该校正以减少要执行计算的设计模式的总数或总边缘长度，即要执行的计算量，扩展度。

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