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    • 2. 发明申请
    • MASK DATA PROCESSING METHOD FOR OPTIMIZING HIERARCHICAL STRUCTURE
    • 用于优化分层结构的掩模数据处理方法
    • US20080216045A1
    • 2008-09-04
    • US11945697
    • 2007-11-27
    • Sachiko KOBAYASHIToshiya KotaniShinichiroh OhkiHirotaka Ichikawa
    • Sachiko KOBAYASHIToshiya KotaniShinichiroh OhkiHirotaka Ichikawa
    • G06F17/50
    • G06F17/5068
    • Disclosed is a mask data processing method of correcting a hierarchical structure. In the case that in design data having a hierarchical structure including a plurality of cells each having a design pattern, when the total number of graphic forms or the total edge length of a design pattern on which the calculation of mask data processing is to be executed, the amount of calculation to be executed, or the expansion degree presumably becomes equal to or larger than a predetermined threshold value if the calculation of the mask data processing is executed on the design data having the initial hierarchical structure, the hierarchical structure is corrected. This correction is performed to reduce the total number of graphic forms or the total edge length of the design pattern on which the calculation is to be executed, the amount of calculation to be executed, of the expansion degree.
    • 公开了一种校正层次结构的掩模数据处理方法。 在具有包括多个单元的设计数据的设计数据中,每个单元均具有设计图案时,当要执行掩模数据处理的计算的设计图案的总数或总边缘长度时 如果对具有初始层次结构的设计数据执行掩模数据处理的计算,则修正了要执行的计算量或扩展度等于或大于预定阈值等于或大于预定阈值。 执行该校正以减少要执行计算的设计模式的总数或总边缘长度,即要执行的计算量,扩展度。
    • 3. 发明申请
    • PATTERN DATA GENERATION METHOD AND PATTERN DATA GENERATION PROGRAM
    • 模式数据生成方法和模式数据生成程序
    • US20090037852A1
    • 2009-02-05
    • US12180244
    • 2008-07-25
    • Sachiko KOBAYASHISuigen KyohShimon Maeda
    • Sachiko KOBAYASHISuigen KyohShimon Maeda
    • G06F17/50
    • G06F17/5081
    • A pattern data generation method of an aspect of the present invention, the method includes creating at least one modification guide to modify a modification target point contained in pattern data, evaluating the modification guides on the basis of an evaluation item, the evaluation item being a change in the shape of the pattern data for the modification target point caused by the modification based on the modification guides or a change in electric characteristics of a pattern formed in accordance with the pattern data, selecting a predetermined modification guide from among the modification guides on the basis of the evaluation result of the modification guides, and modifying the modification target point in accordance with the selected modification guide.
    • 本发明的一个方式的图形数据生成方法,该方法包括创建至少一个修改指南,以修改包含在图案数据中的修改目标点,基于评估项目评估修改指南,评估项目是 基于修改引导引起的修改目标点的图案数据的形状的改变或根据图案数据形成的图案的电特性的变化,从修改引导件中选择预定的修改指南 修改指南的评估结果的基础,以及根据所选择的修改指南修改修改目标点。
    • 4. 发明申请
    • PATTERN FORMING METHOD AND PATTERN VERIFYING METHOD
    • 图案形成方法和图案验证方法
    • US20080184183A1
    • 2008-07-31
    • US12020275
    • 2008-01-25
    • Sachiko KOBAYASHI
    • Sachiko KOBAYASHI
    • G06F17/50
    • G06F17/5081
    • A pattern forming method including modifying design data subjected to a first design rule check in design data of a pattern to be formed in a semiconductor substrate, performing the first design rule check to the modified design data again, outputting the modified design data which does not violate the first design rule as pattern forming design data used in actual pattern formation, and performing a second design rule check having an allowable range wider than that of the first design rule to the modified design data which violates the first design rule, and outputting the modified design data which does not violate the second design rule as the pattern forming design data, and redesigning the pattern to satisfy the second design rule or adjusting the modification guideline such that the modified design data which violates the second design rule satisfies the second design rule.
    • 一种图案形成方法,包括修改经过第一设计规则的设计数据检查要在半导体衬底中形成的图案的设计数据,再次对经修改的设计数据执行第一设计规则检查,输出不改变的设计数据 违反第一设计规则作为在实际图案形成中使用的图案形成设计数据,并且对违反第一设计规则的修改后的设计数据执行具有比第一设计规则宽的容许范围的第二设计规则检查,并输出 修改的设计数据不违反第二设计规则作为图案形成设计数据,并且重新设计图案以满足第二设计规则或调整修改指南,使得违反第二设计规则的修改后的设计数据满足第二设计规则 。