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1. 发明授权

US07917871B2 Method and program for pattern data generation using a modification guide 有权
标题翻译：使用修改指南生成图形数据的方法和程序
公开(公告)号：US07917871B2
公开(公告)日：2011-03-29
申请号：US12180244
申请日：2008-07-25
申请人： Sachiko Kobayashi , Suigen Kyoh , Shimon Maeda
发明人： Sachiko Kobayashi , Suigen Kyoh , Shimon Maeda
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： A pattern data generation method of an aspect of the present invention, the method includes creating at least one modification guide to modify a modification target point contained in pattern data, evaluating the modification guides on the basis of an evaluation item, the evaluation item being a change in the shape of the pattern data for the modification target point caused by the modification based on the modification guides or a change in electric characteristics of a pattern formed in accordance with the pattern data, selecting a predetermined modification guide from among the modification guides on the basis of the evaluation result of the modification guides, and modifying the modification target point in accordance with the selected modification guide.
摘要翻译：本发明的一个方式的图形数据生成方法，该方法包括创建至少一个修改指南，以修改包含在图案数据中的修改目标点，基于评估项目评估修改指南，评估项目是基于修改引导引起的修改目标点的图案数据的形状的改变或根据图案数据形成的图案的电特性的变化，从修改引导件中选择预定的修改指南修改指南的评估结果的基础，以及根据所选择的修改指南修改修改目标点。

2. 发明授权

US08230379B2 Layout generating method for semiconductor integrated circuits 失效
标题翻译：半导体集成电路布局生成方法
公开(公告)号：US08230379B2
公开(公告)日：2012-07-24
申请号：US11874601
申请日：2007-10-18
申请人： Sachiko Kobayashi , Suigen Kyoh
发明人： Sachiko Kobayashi , Suigen Kyoh
IPC分类号： G06F17/32
CPC分类号： G06F17/5081
摘要： A design layout generating method for generating a design pattern of a semiconductor integrated circuit is disclosed. This method comprises modifying a first modification area extracted from a design layout by a first modifying method, and modifying a second modification area extracted from the design layout so as to include the first modification area by a second modifying method on the basis of a pattern modifying guideline calculated from at least a partial design layout in the second modification area.
摘要翻译：公开了一种用于产生半导体集成电路的设计图案的设计布局生成方法。该方法包括：通过第一修改方法修改从设计布局提取的第一修改区域，以及修改从设计布局提取的第二修改区域，以便通过基于模式修改的第二修改方法来包括第一修改区域从第二修改区域中的至少部分设计布局计算出的准则。

3. 发明申请

US20120198396A1 METHOD OF OPTIMIZING SEMICONDUCTOR DEVICE MANUFACTURING PROCESS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER READABLE MEDIUM 审中-公开
标题翻译：优化半导体器件制造工艺的方法，制造半导体器件的方法和非电子计算机可读介质
公开(公告)号：US20120198396A1
公开(公告)日：2012-08-02
申请号：US13237854
申请日：2011-09-20
申请人： Masanari KAJIWARA , Sachiko Kobayashi , Satoshi Tanaka , Kazuhiro Takahata , Shigeki Nojima , Toshiya Kotani , Shimon Maeda
发明人： Masanari KAJIWARA , Sachiko Kobayashi , Satoshi Tanaka , Kazuhiro Takahata , Shigeki Nojima , Toshiya Kotani , Shimon Maeda
IPC分类号： G06F17/50
CPC分类号： H01L22/20 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of optimizing a semiconductor device manufacturing process according to an embodiment is a method of optimizing a semiconductor device manufacturing process in which a pattern based on circuit design is formed. The method of optimizing a semiconductor device manufacturing process according to the embodiment includes: at the time of calculation of a statistic amount based on a distribution of differences at a plurality of sites between a pattern formed by a first exposing apparatus in a first condition and a pattern formed by a second exposing apparatus in a second condition, calculating the statistic amount after applying weighting to the differences based on information on an electrical characteristic; and repeating the calculating with the second condition being changed, and selecting an condition in which the total sum becomes a minimum or equal to or less than a standard value as an optimized condition of the second exposing apparatus.
摘要翻译：根据实施例的优化半导体器件制造工艺的方法是优化其中形成基于电路设计的图案的半导体器件制造工艺的方法。根据实施例的半导体器件制造方法的优化方法包括：在基于在第一状态下由第一曝光装置形成的图案与第一状态之间的多个位置处的差异的分布的统计量的计算时，在第二状态下由第二曝光装置形成的图案，基于关于电特性的信息对所述差进行加权计算后的统计量; 并重复进行第二条件的计算，并且选择总和变为最小或等于或小于标准值的条件作为第二曝光装置的优化条件。

4. 发明申请

US20110177457A1 MASK PATTERN GENERATING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND COMPUTER PROGRAM PRODUCT 审中-公开
标题翻译：掩模图形生成方法，半导体器件的制造方法和计算机程序产品
公开(公告)号：US20110177457A1
公开(公告)日：2011-07-21
申请号：US12984190
申请日：2011-01-04
申请人： Shimon MAEDA , Norikazu Ooishi , Sachiko Kobayashi
发明人： Shimon MAEDA , Norikazu Ooishi , Sachiko Kobayashi
IPC分类号： G03F7/20 , G06F17/50
CPC分类号： G03F1/36
摘要： According to the embodiment, a pattern after lithography is derived by using a mask pattern. The mask pattern is corrected by moving a first moving target pattern so that a first evaluation value calculated with respect to this pattern after lithography satisfies a first condition. Next, a pattern after lithography is derived by using the mask pattern after correction. The mask pattern after correction is further corrected by moving a second moving target pattern so that a second evaluation value calculated with respect to this pattern after lithography satisfies a second condition.
摘要翻译：根据实施例，通过使用掩模图案导出光刻之后的图案。通过移动第一移动目标图案来校正掩模图案，使得在光刻之后相对于该图案计算的第一评估值满足第一条件。接下来，通过在校正后使用掩模图案导出光刻之后的图案。校正后的掩模图案通过移动第二移动目标图案进一步校正，使得在光刻之后相对于该图案计算的第二评估值满足第二条件。

5. 发明授权

US08551991B2 1,2,3,4-tetrahydroquinoxaline derivative having glucocorticoid receptor binding activity 有权
标题翻译：具有糖皮质激素受体结合活性的1,2,3,4-四氢喹喔啉衍生物
公开(公告)号：US08551991B2
公开(公告)日：2013-10-08
申请号：US12225010
申请日：2007-03-14
申请人： Mamoru Matsuda , Toshiyuki Mori , Kenji Kawashima , Minoru Yamamoto , Masatomo Kato , Miwa Takai , Masato Nagatsuka , Sachiko Kobayashi
发明人： Mamoru Matsuda , Toshiyuki Mori , Kenji Kawashima , Minoru Yamamoto , Masatomo Kato , Miwa Takai , Masato Nagatsuka , Sachiko Kobayashi
IPC分类号： A61K31/535 , A61K31/44 , A01N43/40
CPC分类号： C07D241/46 , C07D241/44 , C07D401/12 , C07D401/14 , C07D405/12 , C07D409/12 , C07D409/14 , C07D413/12 , C07D417/12 , C07D417/14
摘要： An object of the present invention is to synthesize a novel 1,2,3,4-tetrahydroquinoxaline derivative represented by formula (1) and to find a pharmacological action of the derivative. In the formula, the R1 represents a halogen, an alkyl, cycloalkyl, aryl or heterocyclic group, or the like; p represents 0 to 5; R2 represents a halogen, an alkyl, hydroxyl or alkoxy group, or the like; q represents 0 to 2; R3 represents hydrogen, an alkyl, alkenyl, alkylcarbonyl or arylcarbonyl group, or the like; R4 and R5 independently represent hydrogen, a halogen, an alkyl, alkenyl, alkynyl, cycloalkyl, aryl or heterocyclic group, or the like; R6 represents hydrogen, an alkyl, alkenyl, alkynyl, cycloalkyl, aryl or heterocyclic group, or the like; A represents an alkylene; R7 represents OR8, NR8R9, SR8, S(O)R8, S(O)2R8; and X represents O or S.
摘要翻译：本发明的目的是合成由式（1）表示的新型1,2,3,4-四氢喹喔啉衍生物，并找到该衍生物的药理学作用。在该式中，R 1表示卤素，烷基，环烷基，芳基或杂环基等; p表示0〜5; R2表示卤素，烷基，羟基或烷氧基等; q表示0〜2; R3表示氢，烷基，烯基，烷基羰基或芳基羰基等; R4和R5独立地表示氢，卤素，烷基，烯基，炔基，环烷基，芳基或杂环基等; R6表示氢，烷基，烯基，炔基，环烷基，芳基或杂环基等; A表示亚烷基; R 7表示OR 8，NR 8 R 9，SR 8，S（O）R 8，S（O）而X代表O或S.

6. 发明授权

US08008496B2 1,2-dihydroquinoline derivative having substituted phenylchalcogeno lower alkyl group and ester-introduced phenyl group as substituents 有权
标题翻译：具有取代的苯基硫代低级烷基和酯引入的苯基作为取代基的1,2-二氢喹啉衍生物
公开(公告)号：US08008496B2
公开(公告)日：2011-08-30
申请号：US12312392
申请日：2007-11-14
申请人： Mamoru Matsuda , Masato Nagatsuka , Toshiyuki Mori , Sachiko Kobayashi , Masatomo Kato , Miwa Takai
发明人： Mamoru Matsuda , Masato Nagatsuka , Toshiyuki Mori , Sachiko Kobayashi , Masatomo Kato , Miwa Takai
IPC分类号： C07D215/38
CPC分类号： C07D401/12 , C07D215/14 , C07D405/12 , C07D409/12 , C07D409/14 , C07D417/12
摘要： The compounds represented in general formula (1) and a salt thereof are useful for glucocorticoid receptor modulator. The R1 represents a hydrogen atom or a lower alkyl group; R2 represents a hydrogen atom or a lower alkyl group; R3 and R4 may be the same or different and represent a hydrogen atom or a lower alkyl group; R5 represents a hydrogen atom or a lower alkyl group; R6 represents a halogen atom, a lower alkyl group, a hydroxy group, a lower alkoxy group or a nitro group; X represents —C(O)—, —C(O)NR8—, —S(O)2— and the like; R7 and/or R8 may be the same or different and represent a hydrogen atom, a lower alkyl group which may have a substituent, an aryl group which may have a substituent, a heterocyclic group which may have a substituent, a lower alkoxy group which may have a substituent and the like; Y represents a lower alkylene group; Z represents a chalcogen atom; and P represents 0, 1, 2 or 3.
摘要翻译：通式（1）表示的化合物及其盐可用于糖皮质激素受体调节剂。 R1表示氢原子或低级烷基; R2表示氢原子或低级烷基; R 3和R 4可以相同或不同，表示氢原子或低级烷基; R5表示氢原子或低级烷基; R6表示卤素原子，低级烷基，羟基，低级烷氧基或硝基; X表示-C（O） - ， - C（O）NR 8 - ， - S（O）2等） R 7和/或R 8可以相同或不同，表示氢原子，可以具有取代基的低级烷基，可以具有取代基的芳基，可以具有取代基的杂环基，低级烷氧基可以具有取代基等; Y表示低级亚烷基; Z表示硫属原子; P表示0,1,2或3。

7. 发明申请

US20100056504A1 NOVEL 1,2-DIHYDROQUINOLINE DERIVATIVE HAVING SUBSTITUTED PHENYLCHALCOGENO LOWER ALKYL GROUP AND ESTER- INTRODUCED PHENYL GROUP AS SUBSTITUENTS 有权
标题翻译：具有取代的苯乙烯基低级烷基的新的1,2-二氢喹啉衍生物和引入的苯基作为取代基
公开(公告)号：US20100056504A1
公开(公告)日：2010-03-04
申请号：US12312392
申请日：2007-11-14
申请人： Mamoru Matsuda , Masato Nagatsuka , Toshiyuki Mori , Sachiko Kobayashi , Masatomo Kato , Miwa Takai
发明人： Mamoru Matsuda , Masato Nagatsuka , Toshiyuki Mori , Sachiko Kobayashi , Masatomo Kato , Miwa Takai
IPC分类号： A61K31/541 , C07D279/06 , C07D413/12 , C07D215/38 , A61K31/47 , A61K31/5377 , A61P25/00
CPC分类号： C07D401/12 , C07D215/14 , C07D405/12 , C07D409/12 , C07D409/14 , C07D417/12
摘要： The compounds represented in general formula (1) and a salt thereof are useful for glucocorticoid receptor modulator. The R1 represents a hydrogen atom or a lower alkyl group; R2 represents a hydrogen atom or a lower alkyl group; R3 and R4 may be the same or different and represent a hydrogen atom or a lower alkyl group; R5 represents a hydrogen atom or a lower alkyl group; R6 represents a halogen atom, a lower alkyl group, a hydroxy group, a lower alkoxy group or a nitro group; X represents —C(O)—, —C(O)NR8—, —S(O)2— and the like; R7 and/or R8 may be the same or different and represent a hydrogen atom, a lower alkyl group which may have a substituent, an aryl group which may have a substituent, a heterocyclic group which may have a substituent, a lower alkoxy group which may have a substituent and the like; Y represents a lower alkylene group; Z represents a chalcogen atom; and P represents 0, 1, 2 or 3.
摘要翻译：通式（1）表示的化合物及其盐可用于糖皮质激素受体调节剂。 R1表示氢原子或低级烷基; R2表示氢原子或低级烷基; R 3和R 4可以相同或不同，表示氢原子或低级烷基; R5表示氢原子或低级烷基; R6表示卤素原子，低级烷基，羟基，低级烷氧基或硝基; X表示-C（O） - ， - C（O）NR 8 - ， - S（O）2等） R 7和/或R 8可以相同或不同，表示氢原子，可以具有取代基的低级烷基，可以具有取代基的芳基，可以具有取代基的杂环基，低级烷氧基可以具有取代基等; Y表示低级亚烷基; Z表示硫属原子; P表示0,1,2或3。

8. 发明申请

US20070124718A1 Mask manufacturing system, mask data creating method and manufacturing method of semiconductor device 失效
标题翻译：掩模制造系统，掩模数据创建方法和半导体器件的制造方法
公开(公告)号：US20070124718A1
公开(公告)日：2007-05-31
申请号：US11440086
申请日：2006-05-25
申请人： Sachiko Kobayashi , Toshiya Kotani
发明人： Sachiko Kobayashi , Toshiya Kotani
IPC分类号： G06F17/50
CPC分类号： G03F1/68 , G03F1/36
摘要： A mask manufacturing system and a mask data creating method reusing data for processing information and environment in the past to reduce a photomask developing period, and a manufacturing method of a semiconductor device are disclosed. According to one aspect of the present invention, it is provided a mask manufacturing system comprising a storage device storing processing data for semiconductor integrated circuits processed in the past, a plurality of operation processing modules, a module selecting section selecting at least one operation processing modules, an optical proximity effect correction section executing optical proximity effect correction to a processing object data and generating a correction data by utilizing past correction information applied for a stored data equivalent to the processing object data, a converting section converting the processing object data into mask data, and a drawing system drawing a mask pattern based on the mask data.
摘要翻译：掩模制造系统和掩模数据创建方法重复利用用于处理信息和环境的数据以减少光掩模生长期，以及半导体器件的制造方法。根据本发明的一个方面，提供了一种掩模制造系统，包括存储用于过去处理的半导体集成电路的处理数据的存储装置，多个操作处理模块，模块选择部分，其选择至少一个操作处理模块光学接近效应校正部分，对处理对象数据执行光学邻近效应校正，并通过利用应用于与处理对象数据相当的存储数据的过去校正信息产生校正数据;转换部分，将处理对象数据转换成掩模数据以及基于掩模数据绘制掩模图案的绘图系统。

9. 发明申请

US20070051950A1 Method for generating test patterns utilized in manufacturing semiconductor device 有权
标题翻译：用于产生用于制造半导体器件的测试图案的方法
公开(公告)号：US20070051950A1
公开(公告)日：2007-03-08
申请号：US11516783
申请日：2006-09-07
申请人： Sachiko Kobayashi , Atsuhiko Ikeuchi
发明人： Sachiko Kobayashi , Atsuhiko Ikeuchi
IPC分类号： H01L23/58
CPC分类号： H01L22/32 , H01L2924/0002 , H01L2924/00
摘要： A method for generating test patterns utilized in manufacturing a semiconductor device includes creating mini-data concerning a partial area pattern used in designing the semiconductor device, subjecting the mini-data to data processing in accordance with a condition of a manufacturing process of the semiconductor device, thereby creating processed mini-data, extracting a marginless point in the processed mini-data where a process margin is less than a predetermined threshold in a manufacturing process of the semiconductor device, determining a class of the marginless point in accordance with a criticality and a category of the marginless point, determining a parameter and a range of the parameter used for the marginless point in accordance with the class of the marginless point, and generating a plurality of test patterns to which different values of the parameter are respectively applied within the range.
摘要翻译：一种用于产生用于制造半导体器件的测试图案的方法，包括：创建关于半导体器件设计中使用的部分区域图案的微型数据，根据半导体器件的制造过程的条件对微型数据进行数据处理从而产生经处理的微型数据，在半导体器件的制造过程中提取处理裕度小于预定阈值的经处理的微型数据中的无边界点，根据临界性确定无边缘点的类别;以及无边缘点的类别，根据无边缘点的类别确定用于无边缘点的参数的参数和范围，以及生成多个测试图案，在该测试图案中分别应用参数的不同值范围。

10. 发明授权

US6004701A Method for designing Levenson photomask 失效
标题翻译：设计Levenson光掩模的方法
公开(公告)号：US6004701A
公开(公告)日：1999-12-21
申请号：US46794
申请日：1998-03-24
申请人： Taiga Uno , Kiyomi Koyama , Kazuko Yamamoto , Satoshi Tanaka , Sachiko Kobayashi , Koji Hashimoto
发明人： Taiga Uno , Kiyomi Koyama , Kazuko Yamamoto , Satoshi Tanaka , Sachiko Kobayashi , Koji Hashimoto
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027 , G03F9/00 , G06F17/50
CPC分类号： G03F1/30
摘要： In a Levenson photomask design method of partially forming a plurality of opening patterns for passing incident light in a light-shielding film for shielding the incident light, and arranging, on some patterns, phase shifters, line segment pairs of different patterns which are adjacent to each other within a predetermined distance R are extracted in units of line segments obtained by dividing the patterns. A pattern within a predetermined distance S from the central point of the opposite region of a line segment pair of interest in a direction perpendicular to the line segments is obtained. The obtained pattern is subjected to a process simulation to obtain resolution easiness representing the easiness in resolving the adjacent patterns. On the basis of the resolution easiness obtained for the adjacent pattern pair within the distance R, a phase shifter is arranged in ascending order of resolution easiness to give a phase difference. Resolution suitable for the exposure condition used can be obtained by a simple method. When the shifter arrangement is determined in consideration of the resolution easiness, a high-resolution shifter arrangement can be realized for a Levenson phase shift mask.
摘要翻译：在莱文森光掩模设计方法中，部分地形成用于使入射光入射到遮光膜中的入射光的多个开口图案，用于屏蔽入射光，并且在某些图案上布置移相器，与不同图案相邻的线段对以规定的距离R为单位，以通过划分图案而得到的线段为单位提取。获得与垂直于线段的方向相关的线段对的相对区域的中心点的预定距离S内的图案。对所获得的图案进行处理模拟以获得表示分辨相邻图案的容易性的分辨率容易度。基于在距离R内对相邻图案对获得的分辨率容易度，移位器按分辨率的顺序排列顺序排列以给出相位差。可以通过简单的方法获得适合于所使用的曝光条件的分辨率。考虑到分辨率容易度来确定移位器装置时，可以实现对莱文森相移掩模的高分辨率移位器装置。

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