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1. 发明授权

US09570673B2 Method and processing apparatus for fabricating a magnetic resistive random access memory device 有权
标题翻译：用于制造磁阻随机存取存储器件的方法和处理装置
公开(公告)号：US09570673B2
公开(公告)日：2017-02-14
申请号：US14794796
申请日：2015-07-08
申请人： Yongsung Park , Kiwoong Kim , Sangyong Kim , Sechung Oh , Youngman Jang
发明人： Yongsung Park , Kiwoong Kim , Sangyong Kim , Sechung Oh , Youngman Jang
IPC分类号： H01L21/00 , H01L43/08 , H01L43/10 , H01L43/12 , H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , H01L27/224 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.
摘要翻译：提供制造MRAM器件的方法与用于制造MRAM器件的处理设备一起提供。所述方法可以包括形成铁磁层，将铁磁层冷却至约50°K至约300°K范围内的温度，形成和氧化冷却的铁磁层上的一个或多个Mg层以形成MgO结构，在MgO结构上形成自由层，并在自由层上形成覆盖层。

2. 发明授权

US09570670B2 Magnetic device and method of fabricating the same 有权
标题翻译：磁性装置及其制造方法
公开(公告)号：US09570670B2
公开(公告)日：2017-02-14
申请号：US13763464
申请日：2013-02-08
申请人： ChanJin Park , Woojin Kim , Hyungjoon Kwon , Soonoh Park , Jongchul Park , Sechung Oh
发明人： ChanJin Park , Woojin Kim , Hyungjoon Kwon , Soonoh Park , Jongchul Park , Sechung Oh
IPC分类号： H01L43/02 , H01L43/08 , H01L43/12
CPC分类号： H01L43/02 , G11C11/1659 , H01L43/08 , H01L43/12
摘要： Provided are a magnetic memory device and a method of fabricating the same. The device may include a magnetic tunnel junction including a lower magnetic structure, an upper magnetic structure, and a tunnel barrier interposed therebetween. The tunnel barrier may have a width greater than that of the lower magnetic structure.
摘要翻译：提供一种磁存储器件及其制造方法。该装置可以包括磁性隧道结，其包括下部磁性结构，上部磁性结构和插入其间的隧道屏障。隧道势垒可以具有大于下部磁性结构的宽度的宽度。

3. 发明授权

US08947914B2 Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same 有权
标题翻译：磁隧道结装置，存储器，电子系统和存储系统及其制造方法
公开(公告)号：US08947914B2
公开(公告)日：2015-02-03
申请号：US13398617
申请日：2012-02-16
申请人： Jeong Heon Park , Woo Chang Lim , Sechung Oh , Woojin Kim , Sang Hwan Park , Jang Eun Lee
发明人： Jeong Heon Park , Woo Chang Lim , Sechung Oh , Woojin Kim , Sang Hwan Park , Jang Eun Lee
IPC分类号： G11C11/00 , G11C11/16 , H01L43/08 , H01L43/10 , H01L43/12 , H01L27/22
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1659 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12 , Y10S977/933 , Y10S977/935
摘要： Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.
摘要翻译：提供一种包括固定磁性结构的磁性隧道接合装置; 自由磁结构; 以及在所述固定磁性结构和所述自由磁性结构之间的隧道势垒，所述固定磁性结构和所述自由磁性结构中的至少一个包括垂直磁化保持层，所述垂直磁化保留层与所述隧道势垒之间的磁性层，以及在垂直磁化保持层和磁性层之间的垂直磁化诱导层。

4. 发明申请

US20140124881A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140124881A1
公开(公告)日：2014-05-08
申请号：US14070471
申请日：2013-11-01
申请人： HYUNGJOON KWON , SECHUNG OH , VLADIMIR URAZAEV , KEN TOKASHIKI , JONGCHUL PARK , Gwang-Hyun BAEK , Jaehun SEO , SANGMIN LEE
发明人： HYUNGJOON KWON , SECHUNG OH , VLADIMIR URAZAEV , KEN TOKASHIKI , JONGCHUL PARK , Gwang-Hyun BAEK , Jaehun SEO , SANGMIN LEE
IPC分类号： H01L43/02
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L27/228 , H01L27/2436 , H01L27/2463 , H01L43/02 , H01L43/10 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148
摘要： Provided are semiconductor devices and methods of fabricating the same. The semiconductor device may include lower wires, upper wires crossing the lower wires, select elements provided at intersections between the lower and upper wires, and memory elements provided between the select elements and the upper wires. Each of the memory elements may include a lower electrode having a top width greater than a bottom width, and a data storage layer including a plurality of magnetic layers stacked on a top surface of the lower electrode and having a rounded edge.
摘要翻译：提供半导体器件及其制造方法。半导体器件可以包括下部布线，穿过下部布线的上部布线，在下部布线和上部布线之间的交叉处提供的选择元件以及设置在选择元件和上部布线之间的存储元件。每个存储元件可以包括具有大于底部宽度的顶部宽度的下部电极，以及包括堆叠在下部电极的顶表面上并且具有圆形边缘的多个磁性层的数据存储层。

5. 发明申请

US20130234269A1 MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNNEL BARRIERS 审中-公开
标题翻译：包括由隧道障碍物分离的磁层的磁记忆装置
公开(公告)号：US20130234269A1
公开(公告)日：2013-09-12
申请号：US13838598
申请日：2013-03-15
申请人： Sechung OH , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
发明人： Sechung OH , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01L43/08 , H01L43/10
摘要： A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.
摘要翻译：磁存储器件可以包括第一垂直磁性层，第一垂直磁性层上的非磁性层和非磁性层上的第一结磁性层，其中非磁性层位于第一垂直磁性层之间和第一结磁性层。隧道势垒可以在第一结磁性层上，其中第一结磁性层位于非磁性层和隧道势垒之间。第二结磁性层可以在隧道势垒上，其中隧道势垒在第一和第二结磁层之间，第二垂直磁性层可以在第二结磁性层上，第二结磁性层位于隧道势垒之间和第二垂直磁性层。

6. 发明授权

US08445981B2 Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming a perpendicular magnetic film of the same 有权
标题翻译：磁存储器件，电子系统和包括其的存储卡，其制造方法和形成其相同的垂直磁性膜的方法
公开(公告)号：US08445981B2
公开(公告)日：2013-05-21
申请号：US13177115
申请日：2011-07-06
申请人： Woo Chang Lim , Jangeun Lee , SeChung Oh , Woojin Kim
发明人： Woo Chang Lim , Jangeun Lee , SeChung Oh , Woojin Kim
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/08 , G11C11/161
摘要： Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming perpendicular magnetic films are provided. The magnetic memory device may include a seed pattern on a substrate having a first crystal structure, a perpendicular magnetic pattern on the seed pattern having a second crystal structure, and an interlayer pattern between the seed pattern and the perpendicular magnetic pattern. The interlayer pattern may reduce a stress caused by a difference between horizontal lattice constants of the first and the second crystal structures.
摘要翻译：提供了磁存储器件，电子系统和包括其的存储卡，其制造方法以及形成垂直磁膜的方法。磁存储器件可以包括在具有第一晶体结构的衬底上的种子图案，具有第二晶体结构的种子图案上的垂直磁图案，以及种子图案和垂直磁图案之间的层间图案。层间图案可以减小由第一和第二晶体结构的水平晶格常数之间的差引起的应力。

7. 发明授权

US08345474B2 Magnetic memory devices including magnetic layers having different products of saturated magnetization and thickness and related methods 有权
标题翻译：磁存储器件包括具有不同饱和磁化强度和厚度产品的磁性层及相关方法
公开(公告)号：US08345474B2
公开(公告)日：2013-01-01
申请号：US12769287
申请日：2010-04-28
申请人： Sechung Oh , Kyung Jin Lee , Jangeun Lee , Hong Ju Suh
发明人： Sechung Oh , Kyung Jin Lee , Jangeun Lee , Hong Ju Suh
IPC分类号： G11C11/14
CPC分类号： G11C11/161
摘要： A magnetic memory device may include a tunnel barrier, a reference layer on a first side of the tunnel barrier, and a free layer on a second side of the tunnel barrier so that the tunnel barrier is between the reference and free layers. The free layer may include a first magnetic layer adjacent the tunnel barrier, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer. More particularly, the nonmagnetic layer may be between the first and second magnetic layers, and the first magnetic layer may be between the tunnel barrier and the second magnetic layer. A product of a saturated magnetization of the first magnetic layer and a thickness of the first magnetic layer may be less than a product of a saturated magnetization of the second magnetic layer and a thickness of the second magnetic layer. Related methods are also discussed.
摘要翻译：磁存储器件可以包括隧道势垒，隧道势垒的第一侧上的参考层和隧道势垒的第二侧上的自由层，使得隧道势垒在参考层和自由层之间。自由层可以包括邻近隧道势垒的第一磁性层，第一磁性层上的非磁性层和非磁性层上的第二磁性层。更具体地，非磁性层可以在第一和第二磁性层之间，并且第一磁性层可以在隧道势垒和第二磁性层之间。第一磁性层的饱和磁化强度和第一磁性层的厚度的乘积可以小于第二磁性层的饱和磁化强度与第二磁性层的厚度的乘积。还讨论了相关方法。

8. 发明申请

US20120217599A1 MAGNETIC MEMORY DEVICES WITH THIN CONDUCTIVE BRIDGES 有权
标题翻译：具有薄导电桥的磁记忆装置
公开(公告)号：US20120217599A1
公开(公告)日：2012-08-30
申请号：US13469979
申请日：2012-05-11
申请人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
发明人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
IPC分类号： H01L29/82
CPC分类号： H01L43/12
摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.
摘要翻译：磁存储器件包括在衬底上的自由层和引导层。绝缘层介于自由层和引导层之间。至少一个导电桥通过绝缘层并电连接自由层和引导层。可以在引导层和绝缘层之间插入扩散阻挡层。该装置还可以包括在与绝缘层相对的自由层的一侧上具有固定的磁化方向的参考层和参考层与自由层之间的隧道势垒。还描述了相关的制造方法。

9. 发明申请

US20120135544A1 Method of Fabricating Semiconductor Device and Apparatus for Fabricating the Same 有权
标题翻译：制造半导体器件的方法及其制造方法
公开(公告)号：US20120135544A1
公开(公告)日：2012-05-31
申请号：US13305377
申请日：2011-11-28
申请人： Woojin Kim , Jangeun Lee , Sechung Oh , Junho Jeong , Heeju Shin
发明人： Woojin Kim , Jangeun Lee , Sechung Oh , Junho Jeong , Heeju Shin
IPC分类号： H01L21/30 , C23C16/455 , C23C16/46
CPC分类号： C23C16/345 , C23C16/403 , C23C16/45536 , C23C16/46 , G11C11/161 , H01L27/222 , H01L43/10
摘要： Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes forming a plurality of magnetic memory patterns spaced apart from each other on a substrate, with each of the magnetic memory patterns including a free pattern, a tunnel barrier pattern, and a reference pattern which are stacked on the substrate, performing a magnetic thermal treatment process on the magnetic memory patterns, and forming a passivation layer on the magnetic memory patterns. The magnetic thermal treatment process and the forming of the passivation layer are simultaneously performed in one reactor.
摘要翻译：提供一种制造半导体器件的方法。制造半导体器件的方法包括在衬底上形成彼此间隔开的多个磁存储器图案，其中每个磁存储器图案包括堆叠在基板上的自由图案，隧道势垒图案和参考图案对磁存储器图案执行磁热处理工艺，以及在磁存储器图案上形成钝化层。磁性热处理工艺和钝化层的形成同时在一个反应器中进行。

10. 发明授权

US08129806B2 Magnetic memory device 有权
公开(公告)号：US08129806B2
公开(公告)日：2012-03-06
申请号：US12686145
申请日：2010-01-12
申请人： Kyungtae Nam , Sukhun Choi , Jangeun Lee , Sechung Oh , Junho Jeong
发明人： Kyungtae Nam , Sukhun Choi , Jangeun Lee , Sechung Oh , Junho Jeong
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01L43/08
摘要： A magnetic memory device includes a magnetic tunnel junction (MTJ) structure and an electrode embedded in a dielectric structure. The MTJ structure includes a free layer. The electrode is formed of silicon-germanium and is electrically connected to the MTJ. The electrode heats the free layer to reduce the coercive force of the free layer to reduce a critical current density.

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