专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08435830B2 Methods of fabricating semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08435830B2
公开(公告)日：2013-05-07
申请号：US12725647
申请日：2010-03-17
申请人： Junho Jeong , Sukhun Choi , Jangeun Lee , Kyunghyun Kim , Sechung Oh , Kyungtae Nam
发明人： Junho Jeong , Sukhun Choi , Jangeun Lee , Kyunghyun Kim , Sechung Oh , Kyungtae Nam
IPC分类号： H01L21/06
CPC分类号： H01L28/20 , H01L21/7684 , H01L27/101 , H01L27/2409 , H01L27/2436 , H01L43/12 , H01L45/04 , H01L45/06 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/147 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Methods of fabricating semiconductor devices are provided including forming a dielectric interlayer on a substrate, the dielectric interlayer defining an opening therein. A metal pattern is formed in the opening. An oxidization process is performed on the metal pattern to form a conductive metal oxide pattern, and the conductive metal oxide pattern is planarized. Related semiconductor devices are also provided.
摘要翻译：提供了制造半导体器件的方法，包括在衬底上形成电介质中间层，电介质层间限定开口。在开口中形成金属图案。对金属图案进行氧化处理以形成导电金属氧化物图案，并且导电金属氧化物图案被平坦化。还提供了相关的半导体器件。

2. 发明申请

US20120168887A1 Magnetic Memory Devices and Methods of Forming the Same 有权
标题翻译：磁记忆体装置及其形成方法
公开(公告)号：US20120168887A1
公开(公告)日：2012-07-05
申请号：US13417402
申请日：2012-03-12
申请人： KyungTae Nam , Byeungchul Kim , Seung-Yeol Lee
发明人： KyungTae Nam , Byeungchul Kim , Seung-Yeol Lee
IPC分类号： H01L29/82
CPC分类号： H01L43/12
摘要： Provided are a magnetic memory device and a method of forming the same. The method may include forming a pinning pattern on a substrate; forming a first interlayer insulating layer that exposes the pinning pattern on the substrate; forming a pinned layer, a tunneling barrier layer and a second magnetic conductive layer on the pinning pattern; and forming a pinned pattern, a tunnel barrier pattern and a second magnetic conductive pattern by performing a patterning process on the pinned layer, the tunnel barrier layer and the second magnetic conductive layer.
摘要翻译：提供一种磁存储器件及其形成方法。该方法可以包括在衬底上形成钉扎图案; 形成在基板上露出钉扎图案的第一层间绝缘层; 在钉扎图案上形成钉扎层，隧道势垒层和第二导电层; 以及通过对被钉扎层，隧道势垒层和第二导电层进行图案化处理，形成钉扎图案，隧道势垒图案和第二导电图案。

3. 发明申请

US20130040408A1 METHOD OF FABRICATING RESISTANCE VARIABLE MEMORY DEVICE AND DEVICES AND SYSTEMS FORMED THEREBY 审中-公开
标题翻译：电阻可变存储器件的制造方法及其形成的器件及其系统
公开(公告)号：US20130040408A1
公开(公告)日：2013-02-14
申请号：US13569425
申请日：2012-08-08
申请人： KyungTae Nam , Ki Joon Kim , Youngnam Hwang
发明人： KyungTae Nam , Ki Joon Kim , Youngnam Hwang
IPC分类号： H01L21/8239
CPC分类号： H01L21/76897 , H01L27/228 , H01L27/2436
摘要： An exemplary method of forming a variable resistance memory may include forming first source/drain regions in a substrate, forming gate line structures and conductive isolation patterns buried in the substrate with the first source/drain regions interposed therebetween, and forming lower contact plugs on the first source/drain regions. The forming of lower contact plugs may include forming a first interlayer insulating layer, including a first recess region exposing the first source/drain regions adjacent to each other in a first direction, forming a conductive layer in the first recess region, patterning the conductive layer to form preliminary conductive patterns spaced apart from each other in the first direction, and patterning the preliminary conductive patterns to form conductive patterns spaced apart from each other in a second direction substantially orthogonal to the first direction.
摘要翻译：形成可变电阻存储器的示例性方法可以包括在衬底中形成第一源极/漏极区域，形成栅极线结构和埋入衬底中的导电隔离图案，其中介于其间的第一源极/漏极区域形成下部接触插塞第一源/漏区。下接触塞的形成可以包括形成第一层间绝缘层，其包括在第一方向上暴露彼此相邻的第一源极/漏极区的第一凹部区域，在第一凹部区域中形成导电层，图案化导电层以在第一方向上形成彼此间隔开的初步导电图案，并且将初步导电图案图案化以形成在与第一方向大致正交的第二方向上彼此间隔开的导电图案。

4. 发明申请

US20120217599A1 MAGNETIC MEMORY DEVICES WITH THIN CONDUCTIVE BRIDGES 有权
标题翻译：具有薄导电桥的磁记忆装置
公开(公告)号：US20120217599A1
公开(公告)日：2012-08-30
申请号：US13469979
申请日：2012-05-11
申请人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
发明人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
IPC分类号： H01L29/82
CPC分类号： H01L43/12
摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.
摘要翻译：磁存储器件包括在衬底上的自由层和引导层。绝缘层介于自由层和引导层之间。至少一个导电桥通过绝缘层并电连接自由层和引导层。可以在引导层和绝缘层之间插入扩散阻挡层。该装置还可以包括在与绝缘层相对的自由层的一侧上具有固定的磁化方向的参考层和参考层与自由层之间的隧道势垒。还描述了相关的制造方法。

5. 发明授权

US08129806B2 Magnetic memory device 有权
公开(公告)号：US08129806B2
公开(公告)日：2012-03-06
申请号：US12686145
申请日：2010-01-12
申请人： Kyungtae Nam , Sukhun Choi , Jangeun Lee , Sechung Oh , Junho Jeong
发明人： Kyungtae Nam , Sukhun Choi , Jangeun Lee , Sechung Oh , Junho Jeong
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01L43/08
摘要： A magnetic memory device includes a magnetic tunnel junction (MTJ) structure and an electrode embedded in a dielectric structure. The MTJ structure includes a free layer. The electrode is formed of silicon-germanium and is electrically connected to the MTJ. The electrode heats the free layer to reduce the coercive force of the free layer to reduce a critical current density.

6. 发明申请

US20100181633A1 Magnetic Memory Device 有权
标题翻译：磁存储器件
公开(公告)号：US20100181633A1
公开(公告)日：2010-07-22
申请号：US12686145
申请日：2010-01-12
申请人： Kyungtae Nam , Sukhun Choi , Jangeun Lee , Sechung Oh , Junho Jeong
发明人： Kyungtae Nam , Sukhun Choi , Jangeun Lee , Sechung Oh , Junho Jeong
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01L43/08
摘要： A magnetic memory device includes a magnetic tunnel junction (MTJ) structure and an electrode embedded in a dielectric structure. The MTJ structure includes a free layer. The electrode is formed of silicon-germanium and is electrically connected to the MTJ. The electrode heats the free layer to reduce the coercive force of the free layer to reduce a critical current density.
摘要翻译：磁存储器件包括磁隧道结（MTJ）结构和嵌入电介质结构中的电极。 MTJ结构包括一个自由层。电极由硅锗形成，并与MTJ电连接。电极加热自由层以降低自由层的矫顽力以降低临界电流密度。

7. 发明申请

US20160163369A1 MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：磁记忆体装置及其制造方法
公开(公告)号：US20160163369A1
公开(公告)日：2016-06-09
申请号：US14957550
申请日：2015-12-02
申请人： Kilho LEE , KyungTae NAM , Sung Chul LEE
发明人： Kilho LEE , KyungTae NAM , Sung Chul LEE
IPC分类号： G11C11/16 , H01L43/08 , H01L27/22 , H01L43/02
CPC分类号： G11C11/161 , H01L27/228 , H01L43/08 , H01L43/12
摘要： Provided is a semiconductor device including magnetic tunnel junctions, which are spaced apart from each other on a substrate, and each of which includes a free magnetic pattern, a first pinned magnetic pattern, and a tunnel barrier pattern therebetween. The semiconductor device further includes a separation structure interposed between the magnetic tunnel junctions. The separation structure includes a second pinned magnetic pattern and a first insulating pattern stacked to each other.
摘要翻译：提供了一种半导体器件，其包括在衬底上彼此间隔开的磁性隧道结，并且其中每一个包括自由磁性图案，第一钉扎磁性图案和它们之间的隧道屏障图案。半导体器件还包括插入在磁性隧道结之间的分离结构。分离结构包括彼此堆叠的第二钉扎磁性图案和第一绝缘图案。

8. 发明申请

US20150228321A1 MAGNETIC MEMORY DEVICES 有权
标题翻译：磁记忆装置
公开(公告)号：US20150228321A1
公开(公告)日：2015-08-13
申请号：US14526489
申请日：2014-10-28
申请人： KILHO LEE , SANGYONG KIM , WOOJIN KIM , KyungTae NAM
发明人： KILHO LEE , SANGYONG KIM , WOOJIN KIM , KyungTae NAM
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/221
摘要： A magnetic memory device is provided. The magnetic memory device includes a plurality of variable resistance devices connected to a word line, and a plurality of bit lines, each of which provides an electrical pathway between a corresponding one of the variable resistance devices and a read and write circuit. Each of the variable resistance devices includes a free layer and a pinned layer spaced apart from each other and having a tunnel barrier interposed therebetween, an assistant layer spaced apart from the tunnel barrier and having the free layer interposed therebetween, and an exchange coupling layer arranged between the free layer and the assistant layer. The exchange coupling layer has an electric polarization, which results from its ferroelectric property, and having a direction that can be changed by a voltage applied to the corresponding one of the bit lines.
摘要翻译：提供磁存储器件。磁存储器件包括连接到字线的多个可变电阻器件和多个位线，每个位线提供相应的一个可变电阻器件与读写电路之间的电路径。每个可变电阻装置包括自由层和钉扎层，彼此间隔开并具有插入其间的隧道势垒，辅助层与隧道势垒间隔开并且具有插入其间的自由层，并且布置有交换耦合层在自由层和辅助层之间。交换耦合层具有由其铁电性质产生的电极化，并且具有可以通过施加到相应的一个位线的电压而改变的方向。

9. 发明授权

US08581364B2 Resistance memory devices and methods of forming the same 有权
标题翻译：电阻记忆装置及其形成方法
公开(公告)号：US08581364B2
公开(公告)日：2013-11-12
申请号：US12963148
申请日：2010-12-08
申请人： KyungTae Nam , Ingyu Baek
发明人： KyungTae Nam , Ingyu Baek
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L45/085 , H01L45/141 , H01L45/146
摘要： Provided are resistance memory devices and methods of forming the same. The resistance memory devices include a first electrode and a second electrode on a substrate, a transition metal oxide layer interposed between the first electrode and the second electrode, an electrolyte layer interposed between the second electrode and the transition metal oxide layer, and conductive bridges having one end that is electrically connected to the second electrode on the electrolyte.
摘要翻译：提供电阻记忆装置及其形成方法。电阻存储器件包括衬底上的第一电极和第二电极，介于第一电极和第二电极之间的过渡金属氧化物层，介于第二电极和过渡金属氧化物层之间的电解质层，以及具有一端与电解质上的第二电极电连接。

10. 发明授权

US08310019B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US08310019B2
公开(公告)日：2012-11-13
申请号：US13361406
申请日：2012-01-30
申请人： Kyungtae Nam , Sukhun Choi , Jangeun Lee , Sechung Oh , Junho Jeong
发明人： Kyungtae Nam , Sukhun Choi , Jangeun Lee , Sechung Oh , Junho Jeong
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01L43/08
摘要： A magnetic memory device includes a magnetic tunnel junction (MTJ) structure and an electrode embedded in a dielectric structure. The MTJ structure includes a free layer. The electrode is formed of silicon-germanium and is electrically connected to the MTJ. The electrode heats the free layer to reduce the coercive force of the free layer to reduce a critical current density.
摘要翻译：磁存储器件包括磁隧道结（MTJ）结构和嵌入电介质结构中的电极。 MTJ结构包括一个自由层。电极由硅锗形成，并与MTJ电连接。电极加热自由层以降低自由层的矫顽力以降低临界电流密度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式