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1. 发明授权

US08345474B2 Magnetic memory devices including magnetic layers having different products of saturated magnetization and thickness and related methods 有权
标题翻译：磁存储器件包括具有不同饱和磁化强度和厚度产品的磁性层及相关方法
公开(公告)号：US08345474B2
公开(公告)日：2013-01-01
申请号：US12769287
申请日：2010-04-28
申请人： Sechung Oh , Kyung Jin Lee , Jangeun Lee , Hong Ju Suh
发明人： Sechung Oh , Kyung Jin Lee , Jangeun Lee , Hong Ju Suh
IPC分类号： G11C11/14
CPC分类号： G11C11/161
摘要： A magnetic memory device may include a tunnel barrier, a reference layer on a first side of the tunnel barrier, and a free layer on a second side of the tunnel barrier so that the tunnel barrier is between the reference and free layers. The free layer may include a first magnetic layer adjacent the tunnel barrier, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer. More particularly, the nonmagnetic layer may be between the first and second magnetic layers, and the first magnetic layer may be between the tunnel barrier and the second magnetic layer. A product of a saturated magnetization of the first magnetic layer and a thickness of the first magnetic layer may be less than a product of a saturated magnetization of the second magnetic layer and a thickness of the second magnetic layer. Related methods are also discussed.
摘要翻译：磁存储器件可以包括隧道势垒，隧道势垒的第一侧上的参考层和隧道势垒的第二侧上的自由层，使得隧道势垒在参考层和自由层之间。自由层可以包括邻近隧道势垒的第一磁性层，第一磁性层上的非磁性层和非磁性层上的第二磁性层。更具体地，非磁性层可以在第一和第二磁性层之间，并且第一磁性层可以在隧道势垒和第二磁性层之间。第一磁性层的饱和磁化强度和第一磁性层的厚度的乘积可以小于第二磁性层的饱和磁化强度与第二磁性层的厚度的乘积。还讨论了相关方法。

2. 发明申请

US20100277976A1 MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS HAVING DIFFERENT PRODUCTS OF SATURATED MAGNETIZATION AND THICKNESS AND RELATED METHODS 有权
标题翻译：包括具有饱和磁化和厚度的不同产品的磁性层的磁性记忆装置及相关方法
公开(公告)号：US20100277976A1
公开(公告)日：2010-11-04
申请号：US12769287
申请日：2010-04-28
申请人： Sechung Oh , Kyung Jin Lee , Jangeun Lee , Hong Ju Suh
发明人： Sechung Oh , Kyung Jin Lee , Jangeun Lee , Hong Ju Suh
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： G11C11/161
摘要： A magnetic memory device may include a tunnel barrier, a reference layer on a first side of the tunnel barrier, and a free layer on a second side of the tunnel barrier so that the tunnel barrier is between the reference and free layers. The free layer may include a first magnetic layer adjacent the tunnel barrier, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer. More particularly, the nonmagnetic layer may be between the first and second magnetic layers, and the first magnetic layer may be between the tunnel barrier and the second magnetic layer. A product of a saturated magnetization of the first magnetic layer and a thickness of the first magnetic layer may be less than a product of a saturated magnetization of the second magnetic layer and a thickness of the second magnetic layer. Related methods are also discussed.
摘要翻译：磁存储器件可以包括隧道势垒，隧道势垒的第一侧上的参考层和隧道势垒的第二侧上的自由层，使得隧道势垒在参考层和自由层之间。自由层可以包括邻近隧道势垒的第一磁性层，第一磁性层上的非磁性层和非磁性层上的第二磁性层。更具体地，非磁性层可以在第一和第二磁性层之间，并且第一磁性层可以在隧道势垒和第二磁性层之间。第一磁性层的饱和磁化强度和第一磁性层的厚度的乘积可以小于第二磁性层的饱和磁化强度与第二磁性层的厚度的乘积。还讨论了相关方法。

3. 发明授权

US08852960B2 Method of fabricating semiconductor device and apparatus for fabricating the same 有权
标题翻译：制造半导体器件的方法及其制造方法
公开(公告)号：US08852960B2
公开(公告)日：2014-10-07
申请号：US13305377
申请日：2011-11-28
申请人： Woojin Kim , Jangeun Lee , Sechung Oh , Junho Jeong , Heeju Shin
发明人： Woojin Kim , Jangeun Lee , Sechung Oh , Junho Jeong , Heeju Shin
IPC分类号： H01L21/00 , H01L27/22 , C23C16/46 , C23C16/40 , H01L43/10 , C23C16/455 , C23C16/34
CPC分类号： C23C16/345 , C23C16/403 , C23C16/45536 , C23C16/46 , G11C11/161 , H01L27/222 , H01L43/10
摘要： Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes forming a plurality of magnetic memory patterns spaced apart from each other on a substrate, with each of the magnetic memory patterns including a free pattern, a tunnel barrier pattern, and a reference pattern which are stacked on the substrate, performing a magnetic thermal treatment process on the magnetic memory patterns, and forming a passivation layer on the magnetic memory patterns. The magnetic thermal treatment process and the forming of the passivation layer are simultaneously performed in one reactor.
摘要翻译：提供一种制造半导体器件的方法。制造半导体器件的方法包括在衬底上形成彼此间隔开的多个磁存储器图案，其中每个磁存储器图案包括堆叠在基板上的自由图案，隧道势垒图案和参考图案对磁存储器图案执行磁热处理工艺，以及在磁存储器图案上形成钝化层。磁性热处理工艺和钝化层的形成同时在一个反应器中进行。

4. 发明授权

US08692342B2 Magnetic memory devices having a uniform perpendicular nonmagnetic metal rich anisotropy enhanced pattern 有权
标题翻译：磁记忆装置具有均匀的垂直非磁性富金属各向异性增强图案
公开(公告)号：US08692342B2
公开(公告)日：2014-04-08
申请号：US13181957
申请日：2011-07-13
申请人： Sechung Oh , Jangeun Lee , Woojin Kim , Heeju Shin
发明人： Sechung Oh , Jangeun Lee , Woojin Kim , Heeju Shin
IPC分类号： H01L29/82 , H01L43/00 , H01L23/552 , H01L29/34 , H01L29/74 , H01L31/111
CPC分类号： H01L43/02 , G11C11/161 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.
摘要翻译：提供了磁存储器件，电子系统和包括其的存储卡，其制造方法以及控制磁性图案的磁化方向的方法。在磁存储器件中，不平行于自由图案的一个表面的原子磁矩在自由图案中增加。因此，可以减小磁存储器件的临界电流密度，使得磁存储器件的功耗被降低或最小化，和/或磁存储器件被改进或优化以达到更高的集成度。

5. 发明授权

US08435830B2 Methods of fabricating semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08435830B2
公开(公告)日：2013-05-07
申请号：US12725647
申请日：2010-03-17
申请人： Junho Jeong , Sukhun Choi , Jangeun Lee , Kyunghyun Kim , Sechung Oh , Kyungtae Nam
发明人： Junho Jeong , Sukhun Choi , Jangeun Lee , Kyunghyun Kim , Sechung Oh , Kyungtae Nam
IPC分类号： H01L21/06
CPC分类号： H01L28/20 , H01L21/7684 , H01L27/101 , H01L27/2409 , H01L27/2436 , H01L43/12 , H01L45/04 , H01L45/06 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/147 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Methods of fabricating semiconductor devices are provided including forming a dielectric interlayer on a substrate, the dielectric interlayer defining an opening therein. A metal pattern is formed in the opening. An oxidization process is performed on the metal pattern to form a conductive metal oxide pattern, and the conductive metal oxide pattern is planarized. Related semiconductor devices are also provided.
摘要翻译：提供了制造半导体器件的方法，包括在衬底上形成电介质中间层，电介质层间限定开口。在开口中形成金属图案。对金属图案进行氧化处理以形成导电金属氧化物图案，并且导电金属氧化物图案被平坦化。还提供了相关的半导体器件。

6. 发明申请

US20140191346A1 MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNNEL BARRIERS 审中-公开
标题翻译：包括由隧道障碍物分离的磁层的磁记忆装置
公开(公告)号：US20140191346A1
公开(公告)日：2014-07-10
申请号：US14206053
申请日：2014-03-12
申请人： Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
发明人： Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01L43/08 , H01L43/10
摘要： A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.
摘要翻译：磁存储器件可以包括第一垂直磁性层，第一垂直磁性层上的非磁性层和非磁性层上的第一结磁性层，其中非磁性层位于第一垂直磁性层之间和第一结磁性层。隧道势垒可以在第一结磁性层上，其中第一结磁性层位于非磁性层和隧道势垒之间。第二结磁性层可以在隧道势垒上，其中隧道势垒在第一和第二结磁层之间，第二垂直磁性层可以在第二结磁性层上，第二结磁性层位于隧道势垒之间和第二垂直磁性层。

7. 发明授权

US08722211B2 Magnetic memory devices and methods of manufacturing such magnetic memory devices 有权
标题翻译：磁存储器件和制造这种磁存储器件的方法
公开(公告)号：US08722211B2
公开(公告)日：2014-05-13
申请号：US12656145
申请日：2010-01-19
申请人： Woojin Kim , Jangeun Lee , Sechung Oh , KyungTae Nam , Dae Kyom Kim , Junho Jeong
发明人： Woojin Kim , Jangeun Lee , Sechung Oh , KyungTae Nam , Dae Kyom Kim , Junho Jeong
IPC分类号： G11C11/15 , G11B5/39 , G11C11/14 , G01R33/09 , H01F10/10 , H01F10/14 , H01F10/16
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11C11/15 , G11C11/161 , H01F10/10 , H01F10/14 , H01F10/16 , H01F10/3254 , H01F10/3272 , H01L43/08 , Y10T428/1114
摘要： A magnetic memory device may include a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer arranged on a substrate. The tunnel barrier layer may include a crystal structure and may be arranged between the first ferromagnetic layer and the second ferromagnetic layer. At least the first ferromagnetic layer may include a first layer in contact with the tunnel barrier layer and a second layer in contact with the first layer, and an orientation of the first layer with respect to the tunnel barrier layer may be greater than an orientation of the second layer with respect to the tunnel barrier layer.
摘要翻译：磁存储器件可以包括第一铁磁层，第二铁磁层和布置在衬底上的隧道势垒层。隧道势垒层可以包括晶体结构，并且可以布置在第一铁磁层和第二铁磁层之间。至少第一铁磁层可以包括与隧道势垒层接触的第一层和与第一层接触的第二层，并且第一层相对于隧道势垒层的取向可以大于相对于隧道势垒层的第二层。

8. 发明授权

US08198102B2 Methods of fabricating magnetic memory devices with thin conductive bridges 有权
标题翻译：用薄导电桥制造磁存储器件的方法
公开(公告)号：US08198102B2
公开(公告)日：2012-06-12
申请号：US12539747
申请日：2009-08-12
申请人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
发明人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
IPC分类号： H01L21/00
CPC分类号： H01L43/12
摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.
摘要翻译：磁存储器件包括在衬底上的自由层和引导层。绝缘层介于自由层和引导层之间。至少一个导电桥通过绝缘层并电连接自由层和引导层。可以在引导层和绝缘层之间插入扩散阻挡层。该装置还可以包括在与绝缘层相对的自由层的一侧上具有固定的磁化方向的参考层和参考层与自由层之间的隧道势垒。还描述了相关的制造方法。

9. 发明申请

US20120126353A1 Magnetic Memory Device 有权
标题翻译：磁存储器件
公开(公告)号：US20120126353A1
公开(公告)日：2012-05-24
申请号：US13361406
申请日：2012-01-30
申请人： Kyungtae Nam , Sukhun Choi , Jangeun Lee , Sechung Oh , Junho Jeong
发明人： Kyungtae Nam , Sukhun Choi , Jangeun Lee , Sechung Oh , Junho Jeong
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01L43/08
摘要： A magnetic memory device includes a magnetic tunnel junction (MTJ) structure and an electrode embedded in a dielectric structure. The MTJ structure includes a free layer. The electrode is formed of silicon-germanium and is electrically connected to the MTJ. The electrode heats the free layer to reduce the coercive force of the free layer to reduce a critical current density.
摘要翻译：磁存储器件包括磁隧道结（MTJ）结构和嵌入电介质结构中的电极。 MTJ结构包括一个自由层。电极由硅锗形成，并与MTJ电连接。电极加热自由层以降低自由层的矫顽力以降低临界电流密度。

10. 发明申请

US20110303996A1 MAGNETIC MEMORY DEVICES 有权
标题翻译：磁记忆装置
公开(公告)号：US20110303996A1
公开(公告)日：2011-12-15
申请号：US13159236
申请日：2011-06-13
申请人： Woojin Kim , Sechung Oh , Jangeun Lee , Jeahyoung Lee , Junho Jeong , Woo Chang Lim
发明人： Woojin Kim , Sechung Oh , Jangeun Lee , Jeahyoung Lee , Junho Jeong , Woo Chang Lim
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/10
摘要： A magnetic memory device includes a reference magnetic layer having a fixed magnetization direction, a tunnel barrier layer on the reference magnetic layer, a free layer having a variable magnetization direction on the tunnel barrier layer opposite the reference magnetic layer, and a magnetization reversal auxiliary layer on the free layer. The magnetization reversal auxiliary layer has a fixed magnetization direction that is substantially perpendicular to a plane along an interface between the tunnel barrier layer and the reference layer. The magnetization reversal auxiliary layer may be directly on the free layer, or an exchange coupling control layer may be provided between the magnetization reversal auxiliary layer and the free layer.
摘要翻译：一种磁存储器件包括具有固定的磁化方向的参考磁性层，参考磁性层上的隧道势垒层，在与参考磁性层相对的隧道势垒层上具有可变的磁化方向的自由层和磁化反转辅助层在自由层上。磁化反转辅助层具有固定的磁化方向，其基本上垂直于沿着隧道势垒层和参考层之间的界面的平面。磁化反转辅助层可以直接在自由层上，或者可以在磁化反转辅助层和自由层之间提供交换耦合控制层。

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