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    • 1. 发明授权
    • Magnetic memory devices including magnetic layers having different products of saturated magnetization and thickness and related methods
    • 磁存储器件包括具有不同饱和磁化强度和厚度产品的磁性层及相关方法
    • US08345474B2
    • 2013-01-01
    • US12769287
    • 2010-04-28
    • Sechung OhKyung Jin LeeJangeun LeeHong Ju Suh
    • Sechung OhKyung Jin LeeJangeun LeeHong Ju Suh
    • G11C11/14
    • G11C11/161
    • A magnetic memory device may include a tunnel barrier, a reference layer on a first side of the tunnel barrier, and a free layer on a second side of the tunnel barrier so that the tunnel barrier is between the reference and free layers. The free layer may include a first magnetic layer adjacent the tunnel barrier, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer. More particularly, the nonmagnetic layer may be between the first and second magnetic layers, and the first magnetic layer may be between the tunnel barrier and the second magnetic layer. A product of a saturated magnetization of the first magnetic layer and a thickness of the first magnetic layer may be less than a product of a saturated magnetization of the second magnetic layer and a thickness of the second magnetic layer. Related methods are also discussed.
    • 磁存储器件可以包括隧道势垒,隧道势垒的第一侧上的参考层和隧道势垒的第二侧上的自由层,使得隧道势垒在参考层和自由层之间。 自由层可以包括邻近隧道势垒的第一磁性层,第一磁性层上的非磁性层和非磁性层上的第二磁性层。 更具体地,非磁性层可以在第一和第二磁性层之间,并且第一磁性层可以在隧道势垒和第二磁性层之间。 第一磁性层的饱和磁化强度和第一磁性层的厚度的乘积可以小于第二磁性层的饱和磁化强度与第二磁性层的厚度的乘积。 还讨论了相关方法。
    • 2. 发明申请
    • MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS HAVING DIFFERENT PRODUCTS OF SATURATED MAGNETIZATION AND THICKNESS AND RELATED METHODS
    • 包括具有饱和磁化和厚度的不同产品的磁性层的磁性记忆装置及相关方法
    • US20100277976A1
    • 2010-11-04
    • US12769287
    • 2010-04-28
    • Sechung OhKyung Jin LeeJangeun LeeHong Ju Suh
    • Sechung OhKyung Jin LeeJangeun LeeHong Ju Suh
    • G11C11/14H01L29/82
    • G11C11/161
    • A magnetic memory device may include a tunnel barrier, a reference layer on a first side of the tunnel barrier, and a free layer on a second side of the tunnel barrier so that the tunnel barrier is between the reference and free layers. The free layer may include a first magnetic layer adjacent the tunnel barrier, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer. More particularly, the nonmagnetic layer may be between the first and second magnetic layers, and the first magnetic layer may be between the tunnel barrier and the second magnetic layer. A product of a saturated magnetization of the first magnetic layer and a thickness of the first magnetic layer may be less than a product of a saturated magnetization of the second magnetic layer and a thickness of the second magnetic layer. Related methods are also discussed.
    • 磁存储器件可以包括隧道势垒,隧道势垒的第一侧上的参考层和隧道势垒的第二侧上的自由层,使得隧道势垒在参考层和自由层之间。 自由层可以包括邻近隧道势垒的第一磁性层,第一磁性层上的非磁性层和非磁性层上的第二磁性层。 更具体地,非磁性层可以在第一和第二磁性层之间,并且第一磁性层可以在隧道势垒和第二磁性层之间。 第一磁性层的饱和磁化强度和第一磁性层的厚度的乘积可以小于第二磁性层的饱和磁化强度与第二磁性层的厚度的乘积。 还讨论了相关方法。