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    • 9. 发明授权
    • Method and apparatus for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source
    • 用于从霍尔电流离子源沉积类金刚石碳和掺硅的类金刚石碳涂层的方法和装置
    • US06504294B1
    • 2003-01-07
    • US09613684
    • 2000-07-11
    • Leonard Joseph MahoneyDavid Ward BrownRudolph Hugo Petrmichl
    • Leonard Joseph MahoneyDavid Ward BrownRudolph Hugo Petrmichl
    • H01J152
    • C23C16/401C23C16/26C23C16/486G11B5/8408Y10S427/103Y10S427/104
    • A unique Hall-Current ion source apparatus is used for direct ion beam deposition of DLC coatings with hardness values greater than 10 GPa and at deposition rates greater than 10 Å per second. This ion source has a unique fluid-cooled anode with a shadowed gap through which ion sources feed gases are introduced while depositing gases are injected into the plasma beam. The shadowed gap provides a well maintained, electrically active area at the anode surface which stays relatively free of non-conductive deposits. The anode discharge region is insulatively sealed to prevent discharges from migrating into the interior of the ion source. A method is described in which a substrate is disposed within a vacuum chamber, coated with a coating of DLC or Si-DLC at a high deposition rate using a Hall-Current ion source operating on carbon-containing or carbon-containing and silicon-containing precursor gases, respectively. The method is particularly advantageous for producing thin, hard, wear resistant DLC and Si-DLC coatings for magnetic transducers and media used for magnetic data storage applications.
    • 独特的霍尔电流离子源设备用于DLC涂层的直接离子束沉积,硬度值大于10 GPa,沉积速率大于每秒10埃。 该离子源具有独特的流体冷却阳极,其具有阴影间隙,通过该阴极间隙引入离子源进料气体,同时将等离子体束注入沉积气体。 阴影间隙在阳极表面处提供良好维护的电活性区域,其保持相对不含非导电沉积物。 阳极放电区被绝对密封,以防止放电进入离子源的内部。 描述了一种方法,其中使用在含碳或含碳和含硅的操作的霍尔电流离子源,将衬底设置在真空室内,以高沉积速率涂覆DLC或Si-DLC的涂层 前体气体。 该方法特别有利于生产用于磁性数据存储应用的磁性换能器和介质的薄的,硬的耐磨DLC和Si-DLC涂层。