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1. 发明申请

US20180284821A1 VOLTAGE REGULATOR 审中-公开
公开(公告)号：US20180284821A1
公开(公告)日：2018-10-04
申请号：US15938316
申请日：2018-03-28
申请人： ABLIC Inc.
发明人： Kaoru SAKAGUCHI , Kazuhiro TSUMURA
IPC分类号： G05F1/567 , G05F1/575
CPC分类号： G05F1/567 , G01R31/2855 , G01R31/2874 , G01R31/3004 , G05F1/575 , H02H5/044
摘要： To provide a voltage regulator capable of switching a voltage of an output terminal from an internal voltage to an external voltage while suppressing an increase in circuit scale. The voltage regulator includes a voltage output circuit configured to generate a constant internal voltage lower than an external voltage applied to an input terminal from the external voltage and supplying the constant internal voltage to an output terminal, a temperature sensing circuit configured to decrease an output voltage of an output node thereof according to a rise in temperature, an overheat detection circuit connected to the output node of the temperature sensing circuit and a test terminal, and a voltage detection circuit connected to the output node of the temperature sensing circuit and the test terminal.

2. 发明授权

US10068814B2 Apparatus and method for evaluating semiconductor device comprising thermal image processing 有权
公开(公告)号：US10068814B2
公开(公告)日：2018-09-04
申请号：US15136448
申请日：2016-04-22
申请人： Mitsubishi Electric Corporation
发明人： Akira Okada , Norihiro Takesako , Hajime Akiyama
IPC分类号： G01R31/00 , G01R31/26 , H01L21/66 , G01R1/067 , H01L21/326
CPC分类号： H01L22/32 , G01R1/06755 , G01R31/2601 , G01R31/2874 , G01R31/2891 , H01L21/326 , H01L22/14
摘要： An apparatus for evaluating a semiconductor device includes: a chuck stage for fixing a semiconductor device; an insulating substrate; a plurality of probes fixed to the insulating substrate; a temperature adjustment unit adjusting temperatures of the plurality of probes; an evaluation/control unit causing a current to flow into the semiconductor device through the plurality of probes to evaluate an electric characteristic of the semiconductor device; an inspection plate having a front surface and a rear surface opposite to each other; a thermal image measurement unit acquiring a thermal image of the inspection plate when distal end portions of the plurality of probes are pressed against the front surface; and a thermal image processing unit performing image processing to the thermal image to obtain in-plane positions and temperatures of the distal end portions of the plurality of probes.

3. 发明授权

US10060963B2 Probe systems, storage media, and methods for wafer-level testing over extended temperature ranges 有权
公开(公告)号：US10060963B2
公开(公告)日：2018-08-28
申请号：US15471199
申请日：2017-03-28
申请人： Cascade Microtech, Inc.
发明人： Timothy Allen McMullen , Jeffery Allan Shepler , Clint Vander Giessen
IPC分类号： G01R31/00
CPC分类号： G01R31/003 , G01R31/2863 , G01R31/2874
摘要： Probe systems, storage media, and methods for wafer-level testing over extended temperature ranges are disclosed herein. The methods are configured to test a plurality of devices under test (DUTs) present on a substrate. The probe systems are programmed to perform the methods. The storage media include computer-readable instructions that direct a probe system to perform the methods.

4. 发明授权

US10054630B2 Methods, apparatus and system for screening process splits for technology development 有权
公开(公告)号：US10054630B2
公开(公告)日：2018-08-21
申请号：US15625609
申请日：2017-06-16
申请人： GLOBALFOUNDRIES INC.
发明人： Suresh Uppal , Andreas Kerber , William McMahon
IPC分类号： G01R31/26 , G01R31/12 , G01R31/28
CPC分类号： G01R31/129 , G01R31/2607 , G01R31/2623 , G01R31/2642 , G01R31/2874
摘要： At least one method and system involves performing a time-dependent dielectric breakdown (TDDB) test and a bias temperature instability (BTI) test on a device. A device having at least one transistor and at least one dielectric layer is provided. A test signal is provided for performing a TDDB test and a BTI test on the device. The TDDB test and the BTI test are performed substantially simultaneously on the device based upon the test signal. The data relating to a breakdown of the dielectric layer and at least one characteristic of the transistor based upon the TDDB test and the BTI test is acquired, stored, and/or transmitted.

5. 发明申请

US20180218926A1 ACTIVE THERMAL CONTROL HEAD HAVING ACTUATABLE COLD CAPACITOR 审中-公开
公开(公告)号：US20180218926A1
公开(公告)日：2018-08-02
申请号：US15879154
申请日：2018-01-24
申请人： Delta Design, Inc.
发明人： Larry Stuckey , Jerry Ihor Tustaniwskyj , Samer Kabbani
IPC分类号： H01L21/67 , G01R31/00
CPC分类号： H01L21/67103 , G01R31/003 , G01R31/2867 , G01R31/2874 , G01R31/2875 , G01R31/2877 , H01L21/67109
摘要： A thermal control head for a semiconductor device handler includes: a heater configured to heat a semiconductor device; a cold manifold; and a cooling mass that is movable between: a first position at which a first surface of the cooling mass contacts a surface of the cold manifold, and a second position at which the first surface of the cooling mass is separated from the cold manifold, and a second surface of the cooling mass contacts a surface of the heater.

6. 发明申请

US20180106853A1 PIPE STRUCTURE AND SEMICONDUCTOR MODULE TESTING EQUIPMENT INCLUDING THE SAME 审中-公开
公开(公告)号：US20180106853A1
公开(公告)日：2018-04-19
申请号：US15670379
申请日：2017-08-07
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： MIN-WOO KIM , Yong-dae HA , Chang-ho LEE , Seul-ki HAN
IPC分类号： G01R31/26 , G01R31/28 , G01R31/00
CPC分类号： G01R31/2601 , G01R31/003 , G01R31/2607 , G01R31/2637 , G01R31/2642 , G01R31/2874 , G01R31/2886 , G01R31/2891
摘要： Semiconductor module testing equipment includes a test board, a plurality of pipe structures extending from an upper surface of the test board in a first direction and spaced apart from one another in a second direction that intersects the first direction, wherein the first and second directions are substantially parallel to a plane of the test board, at least one semiconductor module socket disposed between a pair of neighboring pipe structures of the plurality of pipe structures, and a plurality of nozzles disposed on each pipe structure of the plurality of pipe structures, wherein the plurality of nozzles is configured to discharge a fluid laterally.

7. 发明申请

US20180082882A1 Wafer Chuck, Use of the Wafer Chuck and Method for Testing a Semiconductor Wafer 审中-公开
公开(公告)号：US20180082882A1
公开(公告)日：2018-03-22
申请号：US15701126
申请日：2017-09-11
申请人： Infineon Technologies AG
发明人： Rudolf Zelsacher , Peter Irsigler , Thomas Christian Neidhart
IPC分类号： H01L21/687 , G01R31/28 , B25B11/00
CPC分类号： H01L21/68785 , B25B11/005 , G01R31/2865 , G01R31/2874 , G01R31/2891 , H01L21/68757
摘要： A wafer chuck configured to support a wafer during a wafer test procedure comprises a contact portion for supporting the wafer while being in contact with the wafer. The contact portion is made of a conductive material, the conductive material having a melting point larger than 1500° C.

8. 发明授权

US09841459B2 Device and method for controlling IC temperature 有权
公开(公告)号：US09841459B2
公开(公告)日：2017-12-12
申请号：US15191936
申请日：2016-06-24
申请人： TEST21 TAIWAN CO., Ltd
发明人： Shun-Bon Ho
IPC分类号： G01R31/00 , G01R31/28
CPC分类号： G01R31/2874
摘要： A device for controlling IC temperature capable of bringing a device-under-test to a predetermined temperature includes a compressor, temperature controller element, thermal sensing element, heat insulating structure, input/output terminal and a temperature controller. The compressor has a base and a contact portion contacting the DUT directly. The thermal sensing element is attached to the temperature controlling element contacting the base. The heat insulation structure surrounds the temperature controlling element and a portion of the compressor. The input/output terminal, having a signal line and at least one power line, is disposed on the heat insulation structure. The power and signal lines connected to the temperature sensor are connected to the temperature controlling element and thermal sensing element respectively. The temperature sensor powers the temperature controlling element and controls temperature thereof. Temperature of the temperature controlling element is obtained by measuring electrical properties of thermal sensing element via signal line.

9. 发明申请

US20170338159A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20170338159A1
公开(公告)日：2017-11-23
申请号：US15672547
申请日：2017-08-09
申请人： Renesas Electronics Corporation
发明人： Toshitsugu Ishii , Naohiro Makihira , Hidekazu Iwasaki , Jun Matsuhashi
IPC分类号： H01L21/66 , G01R1/067 , G01R31/40 , H01L23/00 , H01L25/00 , G01R1/04 , G01R31/28
CPC分类号： H01L22/14 , G01R1/0466 , G01R1/0483 , G01R1/06738 , G01R31/2874 , G01R31/40 , H01L24/36 , H01L24/37 , H01L24/40 , H01L24/97 , H01L25/50 , H01L2224/32245 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/48137 , H01L2224/48247 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/97 , H01L2924/00014 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： Improvement in yield of a semiconductor device is obtained. In addition, increase in service life of a socket terminal is obtained. A projecting portion PJ1 and a projecting portion PJ2 are provided in an end portion PU of a socket terminal STE1. Thus, it is possible to enable contact between a lead and the socket terminal STE in which a large current is caused to flow, at two points by a contact using the projecting portion PJ1 and by a contact using the projecting portion PJ2, for example. As a result, the current flowing from the socket terminal STE1 to the lead flows by being dispersed into a path flowing in the projecting portion PJ1 and a path flowing in the projecting portion PJ2. Accordingly, it is possible to suppress increase of temperature of a contact portion between the socket terminal STE1 and the lead even in a case where the large current is caused to flow between the socket terminal STE1 and the lead.

10. 发明申请

US20170299649A1 WEAR-OUT MONITOR DEVICE 审中-公开
公开(公告)号：US20170299649A1
公开(公告)日：2017-10-19
申请号：US15291742
申请日：2016-10-12
申请人： Analog Devices Global
发明人： Edward John Coyne , Alan J. O'Donnell , Colm Patrick Heffernan , Kevin B. Manning , Mark Forde , David J. Clarke , Thomas G. O'Dwyer , David Aherne , Michael A. Looby
IPC分类号： G01R31/26
CPC分类号： G01R31/2879 , G01R31/2874
摘要： The disclosed technology generally relates to integrated circuit devices with wear out monitoring. An integrated circuit device includes a core circuit and a wear-out monitor device. The wear-out monitor device configured to adjust an indication of wear out of the core circuit regardless of whether the core circuit is activated The integrated circuit further includes a sensing circuit coupled to the wear-out monitor device and configured to detect an electrical property of the wear-out monitor device that is indicative of a wear-out level of the core-circuit.

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