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1. 发明申请

US20090102069A1 INTEGRATED CIRCUIT SYSTEM WITH ASSIST FEATURE 有权
标题翻译：具有辅助功能的集成电路系统
公开(公告)号：US20090102069A1
公开(公告)日：2009-04-23
申请号：US11876663
申请日：2007-10-22
申请人： Sia Kim Tan , Qunying Lin , Andrew Khoh
发明人： Sia Kim Tan , Qunying Lin , Andrew Khoh
IPC分类号： H01L23/544 , H01L21/76
CPC分类号： H01L27/0203 , G03F1/36 , G03F1/70 , G03F7/70425 , G03F7/70433
摘要： An integrated circuit system comprising: providing a substrate; forming a main feature using a first non-cross-junction assist feature over the substrate; forming the main feature using a second non-cross-junction assist feature, adjacent a location of the first non-cross-junction feature, over the substrate; and forming an integrated circuit having the substrate with the main feature thereover.
摘要翻译：一种集成电路系统，包括：提供衬底; 在衬底上形成使用第一非交叉接合辅助特征的主要特征; 使用邻近所述第一非交叉连接特征的位置的第二非交叉点辅助特征在所述衬底上形成所述主要特征; 以及形成具有其主要特征的基板的集成电路。

2. 发明授权

US07926000B2 Integrated circuit system employing dipole multiple exposure 有权
标题翻译：采用偶极多重曝光的集成电路系统
公开(公告)号：US07926000B2
公开(公告)日：2011-04-12
申请号：US11683691
申请日：2007-03-08
申请人： Sia Kim Tan , Qunying Lin
发明人： Sia Kim Tan , Qunying Lin
IPC分类号： G06F17/50
CPC分类号： G03F7/70466 , G03F1/70
摘要： An integrated circuit system that includes: providing a first mask including a first feature; exposing the first mask to a radiation source to form an image of the first feature on a photoresist material that is larger than a structure to be formed, the photoresist material being formed over a substrate that includes the integrated circuit system; providing a second mask including a second feature; aligning the second mask over the image of the first mask to form an overlap region; and exposing the second mask to the radiation source to form an image of the second feature on the photoresist material that is larger than the structure to be formed.
摘要翻译：一种集成电路系统，包括：提供包括第一特征的第一掩模; 将所述第一掩模暴露于辐射源以在光致抗蚀剂材料上形成大于所形成的结构的所述第一特征的图像，所述光致抗蚀剂材料形成在包括所述集成电路系统的基板上; 提供包括第二特征的第二掩模; 将第二掩模对准第一掩模的图像以形成重叠区域; 以及将所述第二掩模暴露于所述辐射源以在所述光致抗蚀剂材料上形成大于所述待形成结构的第二特征的图像。

3. 发明申请

US20100197140A1 ANGLED-WEDGE CHROME-FACE WALL FOR INTENSITY BALANCE OF ALTERNATING PHASE SHIFT MASK 有权
标题翻译： ANGED-WEDGE CHROME-FACE WALL FOR INTENSITY BALANCE OF ALTERATE PHASE SHIFT MASK
公开(公告)号：US20100197140A1
公开(公告)日：2010-08-05
申请号：US12696067
申请日：2010-01-29
申请人： Gek Soon CHUA , Sia Kim TAN , Qunying LIN , Cho Jui TAY , Chenggen QUAN
发明人： Gek Soon CHUA , Sia Kim TAN , Qunying LIN , Cho Jui TAY , Chenggen QUAN
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F1/30
摘要： A method for forming a semiconductor device is presented. The method includes providing a substrate having a photoresist thereon and transmitting a light source through a mask having a pattern onto the photoresist. The mask comprises a mask substrate having first, second and third regions, the third region is disposed between the first and second regions. The mask also includes a light reducing layer over the mask substrate having a first opening over the first region and a second opening over the second region. The first and second openings have layer sidewalls. The sidewalls of the light reducing layer are slanted at an angle less than 90 degrees with the plane of a top surface of the mask substrate. The method also includes developing the photoresist to transfer the pattern of the mask to the photoresist.
摘要翻译：提出了一种形成半导体器件的方法。该方法包括提供其上具有光致抗蚀剂的基底，并通过具有图案的掩模将光源透射到光致抗蚀剂上。掩模包括具有第一，第二和第三区域的掩模基板，第三区域设置在第一和第二区域之间。掩模还包括在掩模基板上方的减光层，在第一区域上具有第一开口，在第二区域上具有第二开口。第一和第二开口具有层侧壁。减光层的侧壁与掩模基板的顶表面的平面以小于90度的角度倾斜。该方法还包括显影光致抗蚀剂以将掩模的图案转移到光致抗蚀剂。

4. 发明授权

US07445874B2 Method to resolve line end distortion for alternating phase shift mask 有权
标题翻译：解决交变相移掩模线路失真的方法
公开(公告)号：US07445874B2
公开(公告)日：2008-11-04
申请号：US10985263
申请日：2004-11-10
申请人： Sia Kim Tan , Qunying Lin , Liang-Choo Hsia
发明人： Sia Kim Tan , Qunying Lin , Liang-Choo Hsia
IPC分类号： G03F9/00 , G06F17/50
CPC分类号： G03F1/30
摘要： A embodiment method for forming a layout for a phase shift mask. A embodiment comprises providing a layout comprising a first feature, a first shifter region and a second shifter region. The first feature preferably has a L-shape portion with an elbow region. The first shifter region is on the outside of the L-shaped portion and the second shifter region is on the inside of the L-shaped portion. The elbow region has an outside corner away from the second shifter region. We identify a phase conflict region caused by the L-shaped portion of the first feature, the first shifter region and the second shifter region. We resolve the phase conflict by modifying the elbow region by moving the outside corner of the elbow region away from the first shifter region and the phase conflict region. The modification of the elbow region further comprises forming a jog region in the line end section of the first feature.
摘要翻译：一种用于形成相移掩模布局的实施例方法。实施例包括提供包括第一特征，第一移位区和第二移位区的布局。第一特征优选具有肘部区域的L形部分。第一移位区域位于L形部分的外侧，第二移位区域位于L形部分的内侧。肘部区域具有远离第二移位区域的外角。我们识别由第一特征的L形部分，第一移位区域和第二移位区域引起的相位冲突区域。我们通过移动肘部区域的外角远离第一移位区域和相位冲突区域来修改肘部区域来解决相位冲突。肘部区域的修改还包括在第一特征的线端部中形成点动区域。

5. 发明授权

US08034543B2 Angled-wedge chrome-face wall for intensity balance of alternating phase shift mask 有权
标题翻译：角度楔形铬面墙用于交变相移掩模的强度平衡
公开(公告)号：US08034543B2
公开(公告)日：2011-10-11
申请号：US12696067
申请日：2010-01-29
申请人： Gek Soon Chua , Sia Kim Tan , Qunying Lin , Cho Jui Tay , Chenggen Quan
发明人： Gek Soon Chua , Sia Kim Tan , Qunying Lin , Cho Jui Tay , Chenggen Quan
IPC分类号： G03F7/20 , G03F7/26
CPC分类号： G03F1/30
摘要： A method for forming a semiconductor device is presented. The method includes providing a substrate having a photoresist thereon and transmitting a light source through a mask having a pattern onto the photoresist. The mask comprises a mask substrate having first, second and third regions, the third region is disposed between the first and second regions. The mask also includes a light reducing layer over the mask substrate having a first opening over the first region and a second opening over the second region. The first and second openings have layer sidewalls. The sidewalls of the light reducing layer are slanted at an angle less than 90 degrees from the plane of a top surface of the mask substrate. The method also includes developing the photoresist to transfer the pattern of the mask to the photoresist.
摘要翻译：提出了一种形成半导体器件的方法。该方法包括提供其上具有光致抗蚀剂的基底，并通过具有图案的掩模将光源透射到光致抗蚀剂上。掩模包括具有第一，第二和第三区域的掩模基板，第三区域设置在第一和第二区域之间。掩模还包括在掩模基板上方的减光层，在第一区域上具有第一开口，在第二区域上具有第二开口。第一和第二开口具有层侧壁。减光层的侧壁以与掩模基板的顶面的平面成90度以下的角度倾斜。该方法还包括显影光致抗蚀剂以将掩模的图案转移到光致抗蚀剂。

6. 发明授权

US08003311B2 Integrated circuit system employing multiple exposure dummy patterning technology 有权
标题翻译：采用多次曝光虚拟图形化技术的集成电路系统
公开(公告)号：US08003311B2
公开(公告)日：2011-08-23
申请号：US11972809
申请日：2008-01-11
申请人： Sia Kim Tan , Soo Muay Goh , Qunying Lin , Martin Yeo
发明人： Sia Kim Tan , Soo Muay Goh , Qunying Lin , Martin Yeo
IPC分类号： G03F7/20
CPC分类号： H01L21/31144 , G03F1/36 , G03F7/70466 , H01L21/76816 , H01L23/522 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit system that includes: providing a substrate coated with a photoresist material; exposing the photoresist material to an energy source through a first mask to form a first substrate feature and a second substrate feature therein; and exposing the photoresist material to the energy source through a second mask to transform the second substrate feature into another one of the first substrate feature therein.
摘要翻译：一种集成电路系统，包括：提供涂覆有光致抗蚀剂材料的基底; 通过第一掩模将光致抗蚀剂材料暴露于能量源以在其中形成第一衬底特征和第二衬底特征; 以及通过第二掩模将所述光致抗蚀剂材料暴露于所述能量源，以将所述第二衬底特征变换为所述第一衬底特征中的另一衬底特征。

7. 发明申请

US20090214984A1 METHODS FOR ENHANCING PHOTOLITHOGRAPHY PATTERNING 有权
标题翻译：用于增强光刻图形的方法
公开(公告)号：US20090214984A1
公开(公告)日：2009-08-27
申请号：US12392093
申请日：2009-02-24
申请人： Moh Lung LING , Gek Soon CHUA , Qunying LIN , Cho Jui TAY , Chenggen QUAN
发明人： Moh Lung LING , Gek Soon CHUA , Qunying LIN , Cho Jui TAY , Chenggen QUAN
IPC分类号： G03F7/20
CPC分类号： G03F7/30 , G03B27/72 , G03F7/70125 , G03F7/70425
摘要： A method for fabricating a a semiconductor device that includes: providing a substrate prepared with a photoresist layer; providing a photomask comprising a first and a second pattern having a respective first and second pitch range; providing a composite aperture comprising a first and a second off-axis illumination aperture pattern, the first off-axis aperture pattern having a configuration that improves the process window of the first pitch range and the second off-axis aperture pattern having a configuration that improves the process window for a second pitch range; exposing the photoresist layer on the substrate with radiation from an exposure source through the composite aperture and the photomask; and developing the photoresist layer to pattern the photoresist layer.
摘要翻译：一种制造半导体器件的方法，包括：提供用光致抗蚀剂层制备的衬底; 提供包括具有相应的第一和第二间距范围的第一和第二图案的光掩模; 提供包括第一和第二离轴照明孔径图案的复合孔径，第一离轴孔径图案具有改善第一间距范围的处理窗口并且具有改善的构造的第二离轴孔径图案的构造用于第二间距范围的过程窗口; 通过复合孔径和光掩模将来自曝光源的辐射曝光在基板上; 并且使光致抗蚀剂层显影以对光致抗蚀剂层进行图案化。

8. 发明申请

US20060083994A1 Method and apparatus for removing radiation side lobes 有权
标题翻译：用于去除辐射旁瓣的方法和装置
公开(公告)号：US20060083994A1
公开(公告)日：2006-04-20
申请号：US10970077
申请日：2004-10-20
申请人： Sia Tan , Soon Tan , Qunying Lin , Huey Chong , Liang-Choo Hsia
发明人： Sia Tan , Soon Tan , Qunying Lin , Huey Chong , Liang-Choo Hsia
IPC分类号： G03C5/00 , G06F17/50 , G03F1/00
CPC分类号： G03F1/34 , G03F1/36
摘要： A method and structure for removing side lobes is provided by positioning first and second radiation transparent regions of respective first and second phases at a first plane with the first and second phases being substantially out of phase. Further, positioning the first and the second region to cause radiation at a second plane to be neutralized in a first region, not to be neutralized in a second region, and to have a side lobe in a third region. Further, positioning a non-transparent region at the first plane to assure radiation at the second plane to be neutralized in the first region and positioning a third radiation transparent region of the first or second phase at the first plane to neutralize the side lobes in the third region at the second plane.
摘要翻译：通过将第一和第二相的第一和第二辐射透明区域定位在第一平面上，其中第一和第二相基本上异相，来提供用于去除旁瓣的方法和结构。此外，定位第一和第二区域以使第二平面上的辐射在第一区域中被中和，而不在第二区域中被中和，并且在第三区域中具有旁瓣。此外，在第一平面处定位不透明区域以确保在第二平面处的辐射在第一区域中被中和，并且将第一或第二相的第三辐射透明区域定位在第一平面处以中和旁瓣第三个地区在第二个飞机。

9. 发明授权

US08048588B2 Method and apparatus for removing radiation side lobes 有权
标题翻译：用于去除辐射旁瓣的方法和装置
公开(公告)号：US08048588B2
公开(公告)日：2011-11-01
申请号：US10970077
申请日：2004-10-20
申请人： Sia Kim Tan , Soon Yoeng Tan , Qunying Lin , Huey Ming Chong , Liang-Choo Hsia
发明人： Sia Kim Tan , Soon Yoeng Tan , Qunying Lin , Huey Ming Chong , Liang-Choo Hsia
IPC分类号： G03F1/00 , G03C5/00 , G06F17/50
CPC分类号： G03F1/34 , G03F1/36
摘要： A method and structure for removing side lobes is provided by positioning first and second radiation transparent regions of respective first and second phases at a first plane with the first and second phases being substantially out of phase. Further, positioning the first and the second region to cause radiation at a second plane to be neutralized in a first region, not to be neutralized in a second region, and to have a side lobe in a third region. Further, positioning a non-transparent region at the first plane to assure radiation at the second plane to be neutralized in the first region and positioning a third radiation transparent region of the first or second phase at the first plane to neutralize the side lobes in the third region at the second plane.
摘要翻译：通过将第一和第二相的第一和第二辐射透明区域定位在第一平面上，其中第一和第二相基本上异相，来提供用于去除旁瓣的方法和结构。此外，定位第一和第二区域以使第二平面上的辐射在第一区域中被中和，而不在第二区域中被中和，并且在第三区域中具有旁瓣。此外，在第一平面处定位不透明区域以确保在第二平面处的辐射在第一区域中被中和，并且将第一或第二相的第三辐射透明区域定位在第一平面处以中和旁瓣第三个地区在第二个飞机。

10. 发明授权

US07836420B2 Integrated circuit system with assist feature 有权
标题翻译：具有辅助功能的集成电路系统
公开(公告)号：US07836420B2
公开(公告)日：2010-11-16
申请号：US11876663
申请日：2007-10-22
申请人： Sia Kim Tan , Qunying Lin , Andrew Khoh
发明人： Sia Kim Tan , Qunying Lin , Andrew Khoh
IPC分类号： G06F17/50 , G06F19/00 , H01L25/00 , H01L23/48 , H01L21/82
CPC分类号： H01L27/0203 , G03F1/36 , G03F1/70 , G03F7/70425 , G03F7/70433
摘要： An integrated circuit system comprising: providing a substrate; forming a main feature using a first non-cross-junction assist feature over the substrate; forming the main feature using a second non-cross-junction assist feature, adjacent a location of the first non-cross-junction feature, over the substrate; and forming an integrated circuit having the substrate with the main feature thereover.
摘要翻译：一种集成电路系统，包括：提供衬底; 在衬底上形成使用第一非交叉接合辅助特征的主要特征; 使用邻近所述第一非交叉连接特征的位置的第二非交叉点辅助特征在所述衬底上形成所述主要特征; 以及形成具有其主要特征的基板的集成电路。

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