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1. 发明申请

US20070017898A1 METHOD AND APPARATUS FOR PHOTOMASK PLASMA ETCHING 审中-公开
标题翻译：用于光电子等离子体蚀刻的方法和装置
公开(公告)号：US20070017898A1
公开(公告)日：2007-01-25
申请号：US11530659
申请日：2006-09-11
申请人： Ajay Kumar , Madhavi Chandrachood , Scott Anderson , Peter Satitpunwaycha , Wai Yau
发明人： Ajay Kumar , Madhavi Chandrachood , Scott Anderson , Peter Satitpunwaycha , Wai Yau
IPC分类号： H01L21/306 , H01L21/302 , C23F1/00 , B44C1/22
CPC分类号： H01J37/32651 , G03F1/80 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32871 , H01J2237/0225
摘要： A method and apparatus for etching photomasks is provided herein. In one embodiment, a method for etching a photomask includes placing a reticle upon a pedestal of a processing chamber, forming a plasma from a process gas, preferentially allowing neutrally charged radicals to pass through the plate relative to ions present in the plasma and etching a layer disposed on the reticle. In another embodiment, an apparatus for etching a photomask includes a process chamber having a substrate support pedestal disposed therein that is adapted to receive a photomask reticle thereon. An RF power source is provided for forming a plasma within a processing volume of the chamber. A plate having a plurality of holes formed therein is supported in the processing volume in an orientation substantially parallel to and a spaced apart from both the substrate support pedestal and a lid of the processing chamber.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施例中，用于蚀刻光掩模的方法包括将掩模版放置在处理室的基座上，从处理气体形成等离子体，优先地使中性电荷的自由基相对于存在于等离子体中的离子通过板，并蚀刻层设置在掩模版上。在另一个实施例中，用于蚀刻光掩模的设备包括处理室，其具有设置在其中的基板支撑基座，其适于在其上接收光掩模掩模版。提供RF电源用于在腔室的处理容积内形成等离子体。其中形成有多个孔的板以与基板支撑基座和处理室的盖基本上平行并间隔开的取向被支撑在处理空间中。

2. 发明申请

US20060000802A1 Method and apparatus for photomask plasma etching 审中-公开
标题翻译：光掩模等离子体蚀刻的方法和装置
公开(公告)号：US20060000802A1
公开(公告)日：2006-01-05
申请号：US10882084
申请日：2004-06-30
申请人： Ajay Kumar , Madhavi Chandrachood , Scott Anderson , Peter Satitpunwaycha , Wai Yau
发明人： Ajay Kumar , Madhavi Chandrachood , Scott Anderson , Peter Satitpunwaycha , Wai Yau
IPC分类号： B44C1/22
CPC分类号： H01J37/32651 , G03F1/80 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32871 , H01J2237/0225
摘要： A method and apparatus for etching photomasks is provided herein. In one embodiment, a method of etching a photomask includes providing a process chamber having a substrate support pedestal adapted to receive a photomask substrate thereon. An ion-radical shield is disposed above the pedestal. A substrate is placed upon the pedestal beneath the ion-radical shield. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched predominantly with radicals that pass through the shield.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施例中，蚀刻光掩模的方法包括提供具有适于在其上接收光掩模基板的基板支撑基座的处理室。离子基屏蔽设置在基座上方。将衬底放置在离子基屏蔽下方的基座上。工艺气体被引入到处理室中，并且从处理气体形成等离子体。基底主要用通过屏蔽的自由基进行蚀刻。

3. 发明申请

US20070257009A1 Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator 有权
标题翻译：使用动态可调的等离子体源功率施加器在等离子体反应器中处理工件的方法
公开(公告)号：US20070257009A1
公开(公告)日：2007-11-08
申请号：US11416801
申请日：2006-05-03
申请人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
发明人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
IPC分类号： C23F1/00
CPC分类号： H01J37/321 , H01L21/67069
摘要： A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicator, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least the outer RF source power applicator about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.
摘要翻译：一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨工件表面。该方法还包括至少将外部RF源功率施加器围绕径向倾斜轴线旋转到等离子体处理参数的空间分布相对于公共对称轴线具有至少几乎最小的非对称性的位置，并且平移所述内源电源施加器相对于所述外源功率施加器沿着所述对称轴线到所述空间分布在所述工件的所述表面上具有至少几乎最小不均匀性的位置。

4. 发明申请

US20060166108A1 Method for etching a molybdenum layer suitable for photomask fabrication 失效
标题翻译：蚀刻适用于光掩模制造的钼层的方法
公开(公告)号：US20060166108A1
公开(公告)日：2006-07-27
申请号：US11044358
申请日：2005-01-27
申请人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
发明人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/32 , G03F1/54 , G03F1/80
摘要： Methods for fabricating a photomask are disclosed herein. In one embodiment, a method for fabricating a photomask includes providing a filmstack having a molybdenum layer and a light-shielding layer in a processing chamber, patterning a first resist layer on the light-shielding layer, etching the light-shielding layer using the first resist layer as an etch mask, and etching the molybdenum layer using the patterned light-shielding layer and the patterned first resist layer as a composite mask.
摘要翻译：本文公开了制造光掩模的方法。在一个实施例中，一种制造光掩模的方法包括在处理室中提供具有钼层和遮光层的薄膜层，对遮光层上的第一抗蚀剂层进行图案化，使用第一抗蚀剂层作为蚀刻掩模，并且使用图案化遮光层和图案化的第一抗蚀剂层作为复合掩模蚀刻钼层。

5. 发明授权

US08293430B2 Method for etching a molybdenum layer suitable for photomask fabrication 失效
标题翻译：蚀刻适用于光掩模制造的钼层的方法
公开(公告)号：US08293430B2
公开(公告)日：2012-10-23
申请号：US11044358
申请日：2005-01-27
申请人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
发明人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/54 , G03F1/80
摘要： Methods for fabricating a photomask are disclosed herein. In one embodiment, a method for fabricating a photomask includes providing a filmstack having a molybdenum layer and a light-shielding layer in a processing chamber, patterning a first resist layer on the light-shielding layer, etching the light-shielding layer using the first resist layer as an etch mask, and etching the molybdenum layer using the patterned light-shielding layer and the patterned first resist layer as a composite mask.
摘要翻译：本文公开了制造光掩模的方法。在一个实施例中，一种制造光掩模的方法包括在处理室中提供具有钼层和遮光层的薄膜层，对遮光层上的第一抗蚀剂层进行图案化，使用第一抗蚀剂层作为蚀刻掩模，并且使用图案化遮光层和图案化的第一抗蚀剂层作为复合掩模蚀刻钼层。

6. 发明申请

US20070257008A1 Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another 有权
标题翻译：在等离子体反应器中处理工件的方法，其中等离子体源功率施加器和工件相对于彼此动态调节
公开(公告)号：US20070257008A1
公开(公告)日：2007-11-08
申请号：US11416744
申请日：2006-05-03
申请人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
发明人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
IPC分类号： C23F1/00
CPC分类号： H01J37/32568 , H01J37/321
摘要： A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicators, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least one of (a) the workpiece, (b) the outer source power applicator, about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.
摘要翻译：一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨工件表面。该方法还包括将（a）工件，（b）外源功率施加器，围绕径向倾斜轴线旋转至等离子体工艺参数的空间分布具有至少几乎最小的非 - 相对于共同的对称轴线对称，并且将内源功率施加器相对于外源功率施加器沿对称轴平移到空间分布具有至少几乎最小的非均匀性的位置工件。

7. 发明授权

US08778574B2 Method for etching EUV material layers utilized to form a photomask 有权
标题翻译：用于蚀刻用于形成光掩模的EUV材料层的方法
公开(公告)号：US08778574B2
公开(公告)日：2014-07-15
申请号：US13750888
申请日：2013-01-25
申请人： Keven Yu , Madhavi Chandrachood , Amitabh Sabharwal , Ajay Kumar
发明人： Keven Yu , Madhavi Chandrachood , Amitabh Sabharwal , Ajay Kumar
IPC分类号： G03F7/00 , G03F1/80
CPC分类号： G03F1/00 , G03F1/22 , G03F1/80
摘要： A method and apparatus for etching photomasks are provided herein. In one embodiment, a method of etching an ARC layer or an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having an ARC layer or an absorber layer partially exposed through a patterned layer, providing a gas mixture including at least one fluorine containing gas in to a processing chamber, applying a source RF power to form a plasma from the gas mixture, applying a first type of RF bias power to the substrate for a first period of time, applying a second type of RF bias power away from the substrate for a second period of time, and etching the ARC layer or the absorber layer through the patterned layer in the presence of the plasma.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施例中，蚀刻设置在光掩模上的ARC层或吸收层的方法包括将膜堆叠转移到蚀刻室中，该膜堆具有通过图案化层局部暴露的ARC层或吸收层，提供气体将包含至少一种含氟气体的混合物加入到处理室中，施加源RF功率以从气体混合物形成等离子体，将第一类型的RF偏置功率施加到衬底上第一时间段，施加第二类型的RF偏置功率远离衬底持续第二段时间，并且在存在等离子体的情况下通过图案化层蚀刻ARC层或吸收层。

8. 发明申请

US20130040231A1 METHOD FOR ETCHING A MOLYBDENUM LAYER SUITABLE FOR PHOTOMASK FABRICATION 审中-公开
标题翻译：用于蚀刻适用于光电陶瓷制造的莫尔兹层的方法
公开(公告)号：US20130040231A1
公开(公告)日：2013-02-14
申请号：US13652822
申请日：2012-10-16
申请人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
发明人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
IPC分类号： G03F1/76
CPC分类号： G03F1/32 , G03F1/54 , G03F1/80
摘要： Methods for fabricating a photomask are disclosed herein. In one embodiment, a method for fabricating a photomask includes providing a filmstack having a molybdenum layer and a light-shielding layer in a processing chamber, patterning a first resist layer on the light-shielding layer, etching the light-shielding layer using the first resist layer as an etch mask, and etching the molybdenum layer using the patterned light-shielding layer and the patterned first resist layer as a composite mask.
摘要翻译：本文公开了制造光掩模的方法。在一个实施例中，一种制造光掩模的方法包括在处理室中提供具有钼层和遮光层的薄膜层，对遮光层上的第一抗蚀剂层进行图案化，使用第一抗蚀剂层作为蚀刻掩模，并且使用图案化遮光层和图案化的第一抗蚀剂层作为复合掩模蚀刻钼层。

9. 发明授权

US07829243B2 Method for plasma etching a chromium layer suitable for photomask fabrication 失效
标题翻译：用于等离子体蚀刻适用于光掩模制造的铬层的方法
公开(公告)号：US07829243B2
公开(公告)日：2010-11-09
申请号：US11044341
申请日：2005-01-27
申请人： Xiaoyi Chen , Michael Grimbergen , Madhavi Chandrachood , Jeffrey X. Tran , Ajay Kumar , Simon Tam , Ramesh Krishnamurthy
发明人： Xiaoyi Chen , Michael Grimbergen , Madhavi Chandrachood , Jeffrey X. Tran , Ajay Kumar , Simon Tam , Ramesh Krishnamurthy
IPC分类号： G03F1/00
CPC分类号： C23F4/00 , G03F1/30 , G03F1/54 , G03F1/80
摘要： A method for etching a chromium layer is provided herein. In one embodiment, a method for etching a chromium layer includes providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through a patterned layer, providing at least one halogen containing process gas to a processing chamber, biasing the layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts, and etching the chromium layer through a patterned mask. The method for plasma etching a chromium layer described herein is particularly suitable for fabricating photomasks.
摘要翻译：本文提供了蚀刻铬层的方法。在一个实施例中，用于蚀刻铬层的方法包括在蚀刻室中设置膜层，所述膜层具有部分地通过图案化层暴露的铬层，向处理室提供至少一种含卤素的处理气体，在处理室中的衬底支撑件上具有小于600瓦的多个功率脉冲，并且通过图案化掩模蚀刻铬层。本文所述的用于等离子体蚀刻铬层的方法特别适用于制造光掩模。

10. 发明授权

US07790334B2 Method for photomask plasma etching using a protected mask 有权
标题翻译：使用保护掩模的光掩模等离子体蚀刻的方法
公开(公告)号：US07790334B2
公开(公告)日：2010-09-07
申请号：US11044339
申请日：2005-01-27
申请人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
发明人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
IPC分类号： G03F1/00
CPC分类号： G03F1/80
摘要： A method for etching chromium and forming a photomask is provided. In one embodiment, a method for etching chromium includes providing a film stack in a processing chamber having a chromium layer, patterning a photoresist layer on the film stack, depositing a conformal protective layer on the patterned photoresist layer, etching the conformal protective layer to expose a chromium layer through the patterned photoresist layer, and etching the chromium layer. The methods for etching chromium of the present invention are particularly suitable for fabricating photomasks.
摘要翻译：提供了蚀刻铬并形成光掩模的方法。在一个实施例中，用于蚀刻铬的方法包括在具有铬层的处理室中提供膜堆叠，图案化膜叠层上的光致抗蚀剂层，在图案化的光致抗蚀剂层上沉积保形层，蚀刻保形层以露出通过图案化的光致抗蚀剂层的铬层，以及蚀刻铬层。本发明的蚀刻铬的方法特别适用于制造光掩模。

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