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1. 发明申请

US20140142240A1 POLYMER AND METHOD FOR PRODUCING SAME 有权
标题翻译：聚合物及其生产方法
公开(公告)号：US20140142240A1
公开(公告)日：2014-05-22
申请号：US14129490
申请日：2012-06-12
申请人： Norio Iwakiri , Yosuke Matsuoka , Nobuyuki Yoshioka , Yuki Yamashita , Nobuyuki Sakamoto
发明人： Norio Iwakiri , Yosuke Matsuoka , Nobuyuki Yoshioka , Yuki Yamashita , Nobuyuki Sakamoto
IPC分类号： C08F130/02
CPC分类号： C08F130/02 , A61L27/34 , A61L29/085 , A61L31/10 , C08F220/32 , C08F230/02 , C08L33/10
摘要： Provided are a polymer having low cytotoxicity and capable of imparting surface hydrophilicity and biocompatibility to medical device surfaces by simple processing, a method for producing the polymer, and a surface treatment agent for medical devices. The polymer of the present invention has a particular ratio of structural units represented by the formulae (1a) and (1b), and a particular weight average molecular weight, and is useful as a surface treatment agent for various medical devices.
摘要翻译：提供具有低细胞毒性并能够通过简单加工赋予医疗器械表面的表面亲水性和生物相容性的聚合物，聚合物的制备方法和用于医疗器械的表面处理剂。本发明的聚合物具有由式（1a）和（1b）表示的结构单元和特定重均分子量的特定比例，并且可用作各种医疗器械的表面处理剂。

2. 发明申请

US20110282008A1 SILICONE MONOMER 有权
标题翻译：硅胶单体
公开(公告)号：US20110282008A1
公开(公告)日：2011-11-17
申请号：US13145062
申请日：2010-01-19
申请人： Yosuke Matsuoka , Nobuyuki Yoshioka , Nobuyuki Sakamoto , Toshiya Itei , Ryota Kobayashi , Mao Sorimachi
发明人： Yosuke Matsuoka , Nobuyuki Yoshioka , Nobuyuki Sakamoto , Toshiya Itei , Ryota Kobayashi , Mao Sorimachi
IPC分类号： C08L43/04 , C07F7/02 , C07F7/18
CPC分类号： C07F7/0838 , A61F2/142 , A61F2/16 , C08F220/28 , C08F222/1006 , C08F230/08 , G02B1/043 , G02C7/04 , C08L83/04 , C08L33/10 , C08L51/085
摘要： The invention provides a silicone monomer having high purity and suitable for use in the manufacture of ophthalmic devices, and a contact lens produced from the silicone monomer as a polymerizable component. The silicone monomer is represented by the formula (1): wherein Y1 to Y9 each independently stands for an alkyl group having 1 to 4 carbon atoms, n is an integer of 0 to 3, a and b each independently denotes an integer of 0 or 1, and R stands for a hydrogen atom or a methyl group.
摘要翻译：本发明提供了一种具有高纯度并适用于制造眼科装置的硅氧烷单体和由硅氧烷单体作为可聚合组分制备的隐形眼镜。有机硅单体由式（1）表示：其中Y 1至Y 9各自独立地表示具有1至4个碳原子的烷基，n为0至3的整数，a和b各自独立地表示0或0的整数 1，R代表氢原子或甲基。

3. 发明申请

US20110008724A1 TWO-COMPONENT DEVELOPER, DEVELOPING DEVICE, IMAGE FORMING APPARATUS, AND IMAGE FORMING METHOD 有权
标题翻译：双组分开发商，开发设备，图像形成装置和图像形成方法
公开(公告)号：US20110008724A1
公开(公告)日：2011-01-13
申请号：US12835106
申请日：2010-07-13
申请人： Nobuyuki YOSHIOKA , Takanori Kamoto , Osamu Wada , Tadashi Iwamatsu
发明人： Nobuyuki YOSHIOKA , Takanori Kamoto , Osamu Wada , Tadashi Iwamatsu
IPC分类号： G03G9/10 , G03G13/06 , G03G13/16 , G03G15/08
CPC分类号： G03G9/0825 , G03G9/08782 , G03G9/1075 , G03G9/1131 , G03G9/1136 , G03G2215/0607
摘要： A two-component developer is provided. The two-component developer includes a toner containing a binder resin, a colorant and a release agent, and a resin-coated carrier composed of a carrier core material and a resin coating layer formed on a surface of the carrier core material. The toner has an exposure rate of the release agent on the toner surface of 1.00% or above and 3.07% or below. The carrier core material has an apparent density of 1.86 g/cm3 or more and 2.45 g/cm3 or less. The exposure rate of the release agent of the toner and the apparent density of the carrier core material satisfy the following formula (1): y≦−1.54x+5.93 (1) wherein y represents the exposure rate of the release agent of the toner, and x represents the apparent density of the carrier core material.
摘要翻译：提供了双组分开发。双组分显影剂包括含有粘合剂树脂，着色剂和脱模剂的调色剂和由载体芯材和形成在载体芯材的表面上的树脂涂层构成的树脂涂布载体。调色剂的调色剂表面的脱模剂的曝光率为1.00％以上且3.07％以下。载体芯材的表观密度为1.86g / cm 3以上且2.45g / cm 3以下。调色剂的脱模剂的曝光率和载体芯材的表观密度满足下式（1）：y＆nlE; -1.54x + 5.93（1）其中y表示调色剂的脱模剂的曝光率，x表示载体芯材的表观密度。

4. 发明申请

US20100248116A1 METHOD FOR PRODUCING RESIN-COATED CARRIER, RESIN-COATED CARRIER, TWO-COMPONENT DEVELOPER, DEVELOPING DEVICE, IMAGE FORMING APPARATUS AND IMAGE FORMING METHOD 有权
标题翻译：用于生产树脂涂布载体，树脂涂布载体，双组分开发者，开发装置，图像形成装置和图像形成方法的方法
公开(公告)号：US20100248116A1
公开(公告)日：2010-09-30
申请号：US12730583
申请日：2010-03-24
申请人： Takanori KAMOTO , Takayuki Yamanaka , Osamu Wada , Tadashi Iwamatsu , Nobuyuki Yoshioka
发明人： Takanori KAMOTO , Takayuki Yamanaka , Osamu Wada , Tadashi Iwamatsu , Nobuyuki Yoshioka
IPC分类号： G03G9/10 , G03G9/107 , G03G17/00 , G03G15/08
CPC分类号： G03G9/1075 , G03G9/1131 , G03G9/1133
摘要： A method for producing a low density resin-coated carrier having a small resin amount to a carrier core material and having a uniform resin coating layer formed on the carrier core material is provided. A resin-coated carrier has a carrier core material and a resin coating layer formed on the surface of the carrier core material. The carrier core material has pores and an apparent density of 1.6 g/cm3 to 2.0 g/cm3 and a remanent magnetization of 10 emu/g of less. The resin coating layer is formed by a dry process of adhering resin particles to a surface of the carrier core material and applying heat and impact force to the resin particles. A volume average particle size of the resin particles is less than 1 μm. A two-component developer containing the resin-coated carrier is charged in a developing device in an image forming apparatus, and an image is formed.
摘要翻译：提供了一种制造具有对载体芯材料具有小树脂量并且在载体芯材上形成均匀的树脂涂层的低密度树脂涂覆载体的方法。树脂被覆载体具有载体芯材和在载体芯材的表面上形成的树脂被覆层。载体芯材料具有孔隙，表观密度为1.6g / cm 3至2.0g / cm 3，剩余磁化强度为10emu / g以下。树脂涂层通过将树脂颗粒粘附到载体芯材的表面并对树脂颗粒施加热和冲击力的干法来形成。树脂粒子的体积平均粒径小于1μm。将包含树脂涂布载体的双组分显影剂装入图像形成装置的显影装置中，形成图像。

5. 发明授权

US06569577B1 Phase-shift photo mask blank, phase-shift photo mask and method for fabricating semiconductor devices 有权
标题翻译：相移光掩模空白，相移光掩模和用于制造半导体器件的方法
公开(公告)号：US06569577B1
公开(公告)日：2003-05-27
申请号：US09704697
申请日：2000-11-03
申请人： Akihiko Isao , Susumu Kawada , Shuichiro Kanai , Nobuyuki Yoshioka , Kazuyuki Maetoko
发明人： Akihiko Isao , Susumu Kawada , Shuichiro Kanai , Nobuyuki Yoshioka , Kazuyuki Maetoko
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A phase-shift photo mask blank comprises a half tone phase-shift film, wherein the half tone phase-shift film consists of at least two layers and in the case of two layers, the refractive index of the upper layer of the film is smaller than that of the lower layer thereof; in the case of three layers, the refractive index of the intermediate layer is smaller than those observed for the upper and lower layers or the refractive index of the upper layer is smaller than that of an intermediate layer; in the case of at least 4 layers, the refractive index of the upper most layer is smaller than that of the layer immediately below the upper most layer. The photo mask blank permits the production of a phase-shift photo mask having a high transmittance at an exposure wavelength and a low reflectance as well as a low transmittance at a defect-inspection wavelength. The photo mask in turn permits the fabrication of a semiconductor device having a fine pattern.
摘要翻译：相移光掩模坯料包括半色调相移膜，其中半色调相移膜由至少两层组成，并且在两层的情况下，膜的上层的折射率较小比其下层的; 在三层的情况下，中间层的折射率小于上层和下层观察到的折射率，或者上层的折射率小于中间层的折射率; 在至少4层的情况下，最上层的折射率小于最上层的层的折射率。光掩模空白允许制造在曝光波长和低反射率下具有高透射率以及在缺陷检查波长处的低透射率的相移光掩模。光掩模又允许制造具有精细图案的半导体器件。

6. 发明授权

US06228541B1 Phase-shifting photomask blank, phase-shifting photomask, method for producing them and apparatus for manufacturing the blank 有权
标题翻译：相移光掩模坯料，相移光掩模，其制造方法和用于制造坯料的设备
公开(公告)号：US06228541B1
公开(公告)日：2001-05-08
申请号：US09292936
申请日：1999-04-16
申请人： Akihiko Isao , Susumu Kawada , Tsuneo Yamamoto , Jun Amano , Ryoichi Kobayashi , Nobuyuki Yoshioka
发明人： Akihiko Isao , Susumu Kawada , Tsuneo Yamamoto , Jun Amano , Ryoichi Kobayashi , Nobuyuki Yoshioka
IPC分类号： G03F900
CPC分类号： C23C14/0057 , C23C14/0676 , C23C14/50 , G03F1/32
摘要： A uniform thin phase-shifting photomask blank can be formed by depositing a thin film on a substrate by a reactive sputtering technique while passing, at least four times, the substrate over a sputtering target. In the formation of the blank, NO gas is used as the reactive gas, a target composed of a mixture of molybdenum and silicon is used as the sputtering target and a transparent substrate is used as the thin film-forming substrate to form, on the transparent substrate, a light-transmitting film capable of transmitting light rays having an intensity, which cannot substantially contribute to the exposure. In addition, the film is formed, on the substrate, through an opening having a sufficiently enlarged length along the substrate-conveying direction so that even regions whose deposition rate of the target component is not more than 90% of the maximum level thereof also contribute to the film-formation. The phase-shifting photomask blank thus prepared is subjected to a patterning treatment to form a phase-shifting photomask.
摘要翻译：可以通过反应溅射技术在衬底上沉积薄膜，同时在溅射靶上通过至少四次衬底来形成均匀的薄移相光掩模坯料。在坯料的形成中，使用NO气体作为反应气体，使用由钼和硅的混合物构成的靶作为溅射靶，并且使用透明衬底作为薄膜形成衬底，以形成透明基板，能够透射具有强度的光线的透光膜，其不能显着地有助于曝光。此外，膜在基板上通过沿基板输送方向具有足够长的长度的开口形成，使得目标成分的沉积速率不大于其最大值的90％的均匀区域也有贡献到电影形成。将如此制备的相移光掩模坯料进行图案化处理以形成相移光掩模。

7. 发明授权

US5830607A Phase shift mask and manufacturing method thereof and exposure method using phase shift mask 失效
标题翻译：相移掩模及其制造方法以及使用相移掩模的曝光方法
公开(公告)号：US5830607A
公开(公告)日：1998-11-03
申请号：US864005
申请日：1997-05-27
申请人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki , Kouichiro Narimatsu , Shigenori Yamashita
发明人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki , Kouichiro Narimatsu , Shigenori Yamashita
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F1/38 , G03F1/54 , G03F1/80 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/38 , G03F1/54 , G03F1/80
摘要： A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide, or a molybdenum silicide oxide, or a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of at least 2% and less than 5%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film, or a molybdenum silicide oxide film, or a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.
摘要翻译：相移掩模的第二光透射部分由硅化钼化硅氧化物或硅化钼氧化物或氧化铬或氧化铬或碳化铬氮化物氧化物膜形成，其转换透射曝光光的相位 180°，透光率至少为2％且小于5％。在第二光透射部分的制造方法中，通过溅射法形成硅化钼硅化物氧化物膜或硅化钼氧化物膜，或氮氧化铬膜或氧化铬膜，或碳化氮化物氮化物膜。因此，利用传统的溅射装置，可以形成第二光透射部分，另外，仅需要一次移相器部分的蚀刻处理，从而可以减少制造过程中的缺陷概率和误差。

8. 发明授权

US5691090A Phase shift mask and manufacturing method thereof and exposure method using phase shift mask 失效
标题翻译：相移掩模及其制造方法以及使用相移掩模的曝光方法
公开(公告)号：US5691090A
公开(公告)日：1997-11-25
申请号：US772226
申请日：1996-12-20
申请人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki
发明人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki
IPC分类号： G03F1/32 , G03F1/40 , G03F1/68 , H01L21/027 , H01L21/302 , H01L21/3065 , G03F9/00
CPC分类号： G03F1/80 , G03F1/32 , G03F1/38 , G03F1/54
摘要： A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide or a molybdenum silicide oxide a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of 5-40%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film or a molybdenum silicide oxide film a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.
摘要翻译：相移掩模的第二透光部分由硅化钼氮化氧化物或硅化钼氧化物，氮化铬或氧化铬或碳化铬氮化物氧化物膜形成，其将透射曝光光的相转变180° 透光率为5-40％。在第二光透射部分的制造方法中，通过溅射法形成硅化钼氮化物氧化物膜或氮化硅氧化物膜，氧化铬膜或氧化铬膜，或碳化氮化物膜。因此，利用传统的溅射装置，可以形成第二光透射部分，另外，仅需要一次移相器部分的蚀刻处理，从而可以减少制造过程中的缺陷概率和误差。

9. 发明授权

US5593801A Attenuating type phase shifting mask, method of manufacturing thereof and semiconductor device manufactured by using the mask 失效
标题翻译：衰减型相移掩模，其制造方法和通过使用掩模制造的半导体器件
公开(公告)号：US5593801A
公开(公告)日：1997-01-14
申请号：US462723
申请日：1995-06-05
申请人： Nobuyuki Yoshioka , Junji Miyazaki
发明人： Nobuyuki Yoshioka , Junji Miyazaki
IPC分类号： G03F1/00 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32 , G03F1/70
摘要： An attenuating type phase shifting mask and semiconductor device manufactured by using the mask according to the present invention includes an attenuating type phase shifting pattern, and an attenuating type auxiliary phase shifting pattern having a transmitting portion and a phase shifter portion formed at a predetermined position at the periphery of attenuating type phase shifting pattern, wherein attenuating type auxiliary phase shifting pattern includes a pattern having a resolution smaller than a limit of resolution of an exposure apparatus. Whereby, exposure of the region around a normal exposure region is prevented, and also exposure of the region adjacent to the exposure region is prevented when conducting exposure successively with a substrate moved.
摘要翻译：通过使用根据本发明的掩模制造的衰减型移相掩模和半导体器件包括衰减型移相模式和衰减型辅助移相模式，其具有形成在预定位置处的发送部分和移相器部分衰减型移相模式的周边，其中衰减型辅助移相模式包括分辨率小于曝光装置的分辨率极限的图案。由此，防止了在正常曝光区域周围的区域的曝光，并且在与移动的基板连续进行曝光时也防止了与曝光区域相邻的区域的曝光。

10. 发明授权

US5585658A Semiconductor device having diffusion regions formed with an ion beam absorber pattern 失效
标题翻译：具有形成有离子束吸收体图案的扩散区域的半导体装置
公开(公告)号：US5585658A
公开(公告)日：1996-12-17
申请号：US485708
申请日：1995-06-07
申请人： Takao Mukai , Nobuyuki Yoshioka
发明人： Takao Mukai , Nobuyuki Yoshioka
IPC分类号： H01L21/336 , H01L21/265 , H01L21/266 , H01L21/8238 , H01L27/092 , H01L29/78 , H01L29/76
CPC分类号： H01L21/266 , H01L29/66659 , H01L29/7833 , H01L29/7835 , Y10S148/106 , Y10S438/949 , Y10S438/965
摘要： In implantation of ions into a wafer, in the manufacture of a semiconductor device, a desired ion beam absorber pattern having locally different thicknesses is previously formed on a major surface of the wafer. The ion beam absorber pattern absorbs an ion beam to be implanted and is formed of a thin film material with its absorbency varying depending on its thickness. Ions are implanted once on the major surface of the wafer through this ion beam absorber pattern to form desired different impurity profiles in depth of desired regions on the major surface of the wafer.
摘要翻译：在将离子注入晶片时，在半导体器件的制造中，预先在晶片的主表面上形成具有局部不同厚度的期望的离子束吸收体图案。离子束吸收体图案吸收要注入的离子束，并且其薄膜材料形成，其吸收性随其厚度而变化。离子通过该离子束吸收剂图案在晶片的主表面上植入一次，以在晶片的主表面上形成所需区域的深度的期望的不同杂质分布。

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