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    • 1. 发明授权
    • Thin film forming apparatus
    • 薄膜成型装置
    • US5305366A
    • 1994-04-19
    • US817660
    • 1992-01-07
    • Takehiko NakaharaMasao KoshinakaNobuyuki KosakaToshimasa Tomoda
    • Takehiko NakaharaMasao KoshinakaNobuyuki KosakaToshimasa Tomoda
    • G01N23/223G01N23/225H01L21/66
    • G01N23/2252G01N23/223G01N23/2257G01N2223/076
    • This invention relates to a method and apparatus for analyzing a plurality of elements that are present on the surface of a material of interest or in its neighborhood, as well as a thin-film forming apparatus that is capable of measuring the composition of a sample during thin film formation in the process of semi-conductor fabrication. The apparatus are characterized in that a detector is isolated from the light and heat generated in a sample making mechanism by means of a shield which is not only heat-resistant but also transmissive of fluorescent X-ray containing soft X-rays of 1 Kev and below and that a mirror for total reflection of X-rays which is equipped with slits capable of adjusting the incident and exit angles of fluorescent X-rays from the sample excited with an excitation source as well as the ranges of those angles is provided either at the entrance or exit of said shield or at both.
    • 本发明涉及一种用于分析存在于感兴趣的材料的表面上或其附近的多个元素的方法和装置,以及能够测量样品组成的薄膜形成装置 半导体制造过程中的薄膜形成。 该装置的特征在于,检测器借助于不仅耐热而且还透射含有1Kev的软X射线的荧光X射线的屏蔽而与样品制造机构中产生的光和热隔离, 并且配备有能够调节来自激发源激发的样品的荧光X射线的入射角和出射角度的狭缝以及这些角度的范围的X射线的全反射镜,可以在 所述护罩的入口或出口或两者。
    • 3. 发明授权
    • System for detecting minute particles on or above a substrate
    • 用于检测基板上或上方的微小颗粒的系统
    • US5008558A
    • 1991-04-16
    • US373801
    • 1989-06-29
    • Masao KoshinakaMinoru AkiyamaHitoshi TanakaToshimasa Tomoda
    • Masao KoshinakaMinoru AkiyamaHitoshi TanakaToshimasa Tomoda
    • G01N21/88G01N15/02G01N15/14G01N21/89G01N21/94G01N21/95G01N21/956H01L21/66
    • G01N21/94G01N2015/0238G01N2021/8909G01N2021/945G01N21/9501
    • A fine-particle measuring apparatus designed to measure fine particles attached to the surface of a substrate for a semiconductor device set in a processing unit for formation of films, etching, cleaning, etc. and fine particles suspended in the space above the substrate surface by the use of scattering of a laser beam caused by these fine particles. The measuring apparatus comprises a laser beam scanning mechanism for irradiating a measuring space with a laser beam the angular position of which is minutely modulated at a predetermined frequency, a photodetector which receives light scattered by a fine particle and converts the received light into an electrical signal, and a signal processor which extracts from the electrical signal output by the photodetector a signal component whose frequency is the same as or double that of a modulating signal for the minute scanning with the laser beam and which has a constant phase difference in terms of time with respect to the modulating signal. Thus, it is possible to measure fine particles with high sensitivity without substantially disturbing the environment inside the process unit or the process itself.
    • 一种微粒测量装置,被设计用于测量附着在用于形成膜,蚀刻,清洁等的处理单元中的用于半导体器件的基板的表面的细颗粒,以及悬浮在基板表面上方的空间中的细颗粒 使用由这些细颗粒引起的激光束的散射。 该测量装置包括:激光束扫描机构,用于以预定频率微调其角度位置的激光束照射测量空间;光电检测器,其接收由微粒散射的光并将接收的光转换成电信号 以及信号处理器,其从由光电检测器输出的电信号中提取频率与用于用激光束进行微小扫描的调制信号的频率相同或者是两倍的信号分量,并且其在时间上具有恒定的相位差 相对于调制信号。 因此,可以以高灵敏度测量细颗粒,而基本上不会干扰处理单元内的环境或过程本身。
    • 4. 发明授权
    • Fine-particle measuring apparatus
    • 细颗粒测量仪
    • US5030842A
    • 1991-07-09
    • US540893
    • 1990-06-20
    • Masao KoshinakaMinoru AkiyamaToshimasa Tomoda
    • Masao KoshinakaMinoru AkiyamaToshimasa Tomoda
    • G01N21/88G01N15/02G01N15/14G01N21/21G01N21/47G01N21/94G01N21/95G01N21/956H01L21/66
    • G01N15/0205G01N21/94G01N2015/145G01N21/21G01N21/47G01N21/9501
    • A fine-particle measuring apparatus designed to measure fine particles attached to the surface of a substrate of a semiconductor device set in a processing unit for formation of films, etching, cleaning, etc. and fine particles suspended in the space above the substrate surface by the use of scattering of a laser beam caused by these fine particles. The measuring apparatus comprises a laser light phase modulator for generating two laser beams which have the same wavelength and the phase difference between which is modulated at a predetermined frequency, an optical system which causes the two laser beams to intersect each other within a space containing the fine particles being the objects of measurement, a photodetector which receives light scattered by any of the fine particles in the region which the two laser beams intersect, and converts the received light into an electrical signal, and a signal processor which extracts from the electrical signal based on the scattered light of a signal component whose frequency is the same as or double that of a phase modulating signal for the modulation effected in the laser beam phase modulator and which has a constant phase difference with respect to the phase modulating signal. Thus, it is possible to measure fine particles with high spatial resolving power without substantially disturbing the environment inside the process unit or the process itself.
    • 一种微粒测量装置,设计用于测量附着在半导体器件的基板的表面上的细颗粒,该半导体器件的基板的表面设置在用于形成膜,蚀刻,清洁等的处理单元中,以及悬浮在基板表面上方的空间中的细颗粒 使用由这些细颗粒引起的激光束的散射。 测量装置包括激光相位调制器,用于产生具有相同波长的两个激光束,并且其相位差以预定频率被调制;使得两个激光束在包含该两个激光束的空间内彼此相交的光学系统 作为测量对象的微粒子,接收由两个激光束相交的区域中的任何细颗粒散射的光并将接收的光转换为电信号的光检测器,以及从电信号中提取的信号处理器 基于在激光束相位调制器中进行的调制的相位调制信号的频率相同或相反的信号分量的散射光,并且相对于相位调制信号具有恒定的相位差。 因此,可以测量具有高空间分辨能力的细颗粒,而基本上不会干扰处理单元内的环境或过程本身。
    • 5. 发明授权
    • Thin film forming apparatus having a gas flow settling device
    • 具有气流稳定装置的薄膜形成装置
    • US5024182A
    • 1991-06-18
    • US376015
    • 1989-07-06
    • Toshiyuki KobayashiMasao KoshinakaYoshimi KinoshitaMasao OdaKenji Yoshizawa
    • Toshiyuki KobayashiMasao KoshinakaYoshimi KinoshitaMasao OdaKenji Yoshizawa
    • C23C16/50C23C16/44C23C16/452C23C16/455C23C16/511H01L21/205H01L21/31
    • C23C16/45502C23C16/452C23C16/455
    • An apparatus for forming a thin film on a substrate by bringing a first gas and a second gas into reaction with each other in a reaction chamber near the surface of the substrate in the reaction chamber. The apparatus has a plasma generating chamber disposed adjacent to the reaction chamber for generating a plasma of the first gas in a predetermined direction. A first gas inlet is provided at the boundary between the plasma generating chamber and the reaction chamber and formed to extend in the predetermined direction, while a second gas inlet is provided in the vicinity of the first gas inlet and extended in the predetermined direction. The apparatus further has a first gas supplying device for introducing the first gas into the plasma generating chamber and for introducing the first gas activated by a plasma in the plasma generating chamber into the reaction chamber through the first gas inlet, and second gas supplying device for supplying the second gas into the reaction chamber through the second gas inlet. A first flow settling device having plates disposed transverse to the flow of the first gas is positioned between the first gas inlet and plasma chamber. A second flow settling device may be located between the second gas supplying device and second gas inlet.
    • 一种用于在反应室中的基板表面附近的反应室中使第一气体和第二气体彼此反应而在基板上形成薄膜的装置。 该装置具有邻近反应室设置的等离子体产生室,用于沿预定方向产生第一气体的等离子体。 第一气体入口设置在等离子体产生室和反应室之间的边界处并形成为沿预定方向延伸,而第二气体入口设置在第一气体入口附近并沿预定方向延伸。 该装置还具有:第一气体供给装置,其用于将第一气体引入等离子体发生室,并且通过第一气体入口将等离子体产生室中的等离子体激活的第一气体引入反应室;第二气体供给装置, 通过第二气体入口将第二气体供应到反应室中。 具有横向于第一气体的流动设置的板的第一流动沉降装置位于第一气体入口和等离子体室之间。 第二流动沉降装置可以位于第二气体供给装置和第二气体入口之间。