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1. 发明授权

US09326425B2 Power module 有权
标题翻译：电源模块
公开(公告)号：US09326425B2
公开(公告)日：2016-04-26
申请号：US13996640
申请日：2011-12-07
申请人： Tokihito Suwa , Yujiro Kaneko , Masashi Yura , Nobutake Tsuyuno , Toshiaki Ishii , Junpei Kusukawa
发明人： Tokihito Suwa , Yujiro Kaneko , Masashi Yura , Nobutake Tsuyuno , Toshiaki Ishii , Junpei Kusukawa
IPC分类号： H05K7/02 , H05K7/20 , H01L23/433 , H01L25/16 , H02M7/00 , H01L23/473 , H01L25/18 , H01L23/36 , H01L25/11 , H01L23/367
CPC分类号： H05K7/20509 , H01L23/36 , H01L23/3677 , H01L23/4334 , H01L23/473 , H01L25/072 , H01L25/115 , H01L25/16 , H01L25/18 , H01L2224/32245 , H01L2224/40137 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H02M7/003 , H05K7/209 , H05K7/20927 , H01L2924/00
摘要： Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di>(1.36×10-8×Vt2+3.4×10-5×Vt−0.015)×∈r, where a relative permittivity of the insulating member is ∈r and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding.
摘要翻译：本发明提供一种电力转换装置，其特征在于，包括绝缘部件，其制造成使得由与树脂形成的绝缘部件的厚度di（mm）设置在与功率半导体装置接合的导体板的散热面与散热板之间，散发功率半导体器件的热量满足di>（1.36×10-8×Vt2 + 3.4×10-5×Vt-0.015）×∈r的关系，其中绝缘构件的相对介电常数为∈r，a 伴随功率半导体器件的ON / OFF开关操作的导体板和散热板之间产生的浪涌电压为Vt（V）。功率半导体器件的导体板，绝缘构件和散热板通过热压接而接合。

2. 发明授权

US08723306B2 Power semiconductor unit, power module, power semiconductor unit manufacturing method, and power module manufacturing method 有权
标题翻译：功率半导体单元，功率模块，功率半导体单元制造方法和功率模块制造方法
公开(公告)号：US08723306B2
公开(公告)日：2014-05-13
申请号：US13811722
申请日：2011-07-25
申请人： Nobutake Tsuyuno , Hiroshi Hozoji , Toshiaki Ishii , Tokihito Suwa , Kinya Nakatsu , Takeshi Tokuyama , Junpei Kusukawa
发明人： Nobutake Tsuyuno , Hiroshi Hozoji , Toshiaki Ishii , Tokihito Suwa , Kinya Nakatsu , Takeshi Tokuyama , Junpei Kusukawa
IPC分类号： H01L23/495
CPC分类号： H01L23/49568 , B60L1/003 , B60L3/003 , B60L7/14 , B60L11/123 , B60L11/14 , B60L15/007 , B60L2210/40 , B60L2220/14 , B60L2240/12 , B60L2240/36 , B60L2240/525 , H01L21/56 , H01L21/565 , H01L23/473 , H01L23/49575 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/072 , H01L2224/06181 , H01L2224/291 , H01L2224/32245 , H01L2224/33 , H01L2224/37011 , H01L2224/4007 , H01L2224/40137 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2224/83801 , H01L2224/83815 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1203 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15151 , H01L2924/181 , H01L2924/1815 , H01L2924/30107 , H02M7/003 , H05K7/20927 , Y02T10/6217 , Y02T10/645 , Y02T10/7077 , Y02T10/7241 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.
摘要翻译：电极引线框架7和8的散热表面7b和8b通过绝缘片10与热辐射部件301热接触，以将热量从功率半导体元件5散发到散热部件（厚部分301）。辐射表面7b和8b的每个暴露区域和与暴露区域相邻的模具材料（密封材料13）的表面13b产生不均匀的步骤，露出区域和表面13b中的任一个与暴露的区域项目。在凹凸台面的凸面与凹面之间形成的台阶侧表面具有倾斜面7a，13a，该倾斜面7a，13a可以由倾斜面和凸面以及倾斜面和凹面形成钝角为每一个。

3. 发明授权

US07217992B2 Semiconductor device, semiconductor wafer, semiconductor module, and a method of manufacturing semiconductor device 失效
标题翻译：半导体装置，半导体晶片，半导体模块以及半导体装置的制造方法
公开(公告)号：US07217992B2
公开(公告)日：2007-05-15
申请号：US10861523
申请日：2004-06-07
申请人： Masahiko Ogino , Takumi Ueno , Shuji Eguchi , Akira Nagai , Toshiya Satoh , Toshiaki Ishii , Hiroyoshi Kokaku , Tadanori Segawa , Nobutake Tsuyuno , Asao Nishimura , Ichiro Anjoh
发明人： Masahiko Ogino , Takumi Ueno , Shuji Eguchi , Akira Nagai , Toshiya Satoh , Toshiaki Ishii , Hiroyoshi Kokaku , Tadanori Segawa , Nobutake Tsuyuno , Asao Nishimura , Ichiro Anjoh
IPC分类号： H01L23/02 , H01L23/28 , H01L21/00
CPC分类号： H01L23/3171 , H01L23/3114 , H01L23/3164 , H01L24/45 , H01L24/48 , H01L2224/05001 , H01L2224/05008 , H01L2224/05026 , H01L2224/05569 , H01L2224/05571 , H01L2224/1147 , H01L2224/16 , H01L2224/32225 , H01L2224/45144 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/01087 , H01L2924/01322 , H01L2924/12042 , H01L2924/12044 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/3025 , H01L2924/00 , H01L2224/05599 , H01L2224/05144 , H01L2224/05147 , H01L2924/00012
摘要： Semiconductor devices,-semiconductor wafers, and semiconductor modules are provided: wherein the semiconductor device has a small warp; damages at chip edge and cracks in a dropping test are scarcely generated; and the semiconductor device is superior in mounting reliability and mass producibility.The semiconductor device 17 comprising: a semiconductor chip 64; a porous stress relaxing layer 3 provided on the plane, whereon circuits and electrodes are formed, of the semiconductor chip; a circuit layer 2 provided on the stress relaxing layer and connected to the electrodes; and external terminals 10 provided on the circuit layer; wherein an organic protecting film 7 is formed on the plane, opposite to the stress relaxing layer, of the semiconductor chip, and respective side planes of the stress relaxing layer, the semiconductor chip 6, and the protecting film 7 are exposed outside on a same plane.
摘要翻译：提供半导体器件，半导体晶片和半导体模块：其中半导体器件具有小的翘曲; 几乎不产生芯片边缘的损坏和跌落试验中的裂纹; 半导体装置的安装可靠性和大规模生产性优异。半导体器件17包括：半导体芯片64; 设置在半导体芯片的形成有电路和电极的平面上的多孔应力缓和层3; 设置在应力缓和层上并与电极连接的电路层2; 和设置在电路层上的外部端子10; 其中在半导体芯片的与应力缓和层相反的平面上形成有机保护膜7，并且应力缓和层，半导体芯片6和保护膜7的各个侧面在外部暴露在外部飞机

4. 发明授权

US6114753A Circuit tape having adhesive film, semiconductor device, and a method for manufacturing the same 失效
标题翻译：具有粘合膜的电路带，半导体器件及其制造方法
公开(公告)号：US6114753A
公开(公告)日：2000-09-05
申请号：US857674
申请日：1997-05-16
申请人： Akira Nagai , Shuji Eguchi , Masahiko Ogino , Masanori Segawa , Toshiak Ishii , Nobutake Tsuyuno , Hiroyoshi Kokaku , Rie Hattori , Makoto Morishima , Ichiro Anjoh , Kunihiro Tsubosaki , Chuichi Miyazaki , Makoto Kitano , Mamoru Mita , Norio Okabe
发明人： Akira Nagai , Shuji Eguchi , Masahiko Ogino , Masanori Segawa , Toshiak Ishii , Nobutake Tsuyuno , Hiroyoshi Kokaku , Rie Hattori , Makoto Morishima , Ichiro Anjoh , Kunihiro Tsubosaki , Chuichi Miyazaki , Makoto Kitano , Mamoru Mita , Norio Okabe
IPC分类号： H01L21/60 , H01L23/12 , H01L23/31 , H01L23/495 , H01L23/485
CPC分类号： H01L24/06 , H01L23/3107 , H01L23/4951 , H01L2224/0401 , H01L2224/04042 , H01L2224/06136 , H01L2224/48091 , H01L2224/4824 , H01L24/48 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/15311 , H01L2924/1532 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , Y10T428/28 , Y10T428/2848
摘要： A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for the mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200-250.degree. C.).
摘要翻译：具有优异的连接可靠性的半导体器件通过在半导体封装结构中设置用于吸收安装基板和半导体元件之间的热膨胀差的缓冲体，即使将有机材料用于安装基板也是可以获得的。使用薄膜材料作为用于缓冲由安装基板和半导体元件之间的热膨胀差异产生的热应力的本体。膜材料的回流温度范围（200-250℃）的弹性模量至少为1MPa。

5. 发明授权

US08339795B2 Transmission control apparatus and mechanically and electrically integrated type electronic control apparatus 失效
标题翻译：变速器控制装置和机电一体型电子控制装置
公开(公告)号：US08339795B2
公开(公告)日：2012-12-25
申请号：US12831737
申请日：2010-07-07
申请人： Nobutake Tsuyuno , Itaru Tanabe , Toshiaki Ishii , Hiroshi Kameyama
发明人： Nobutake Tsuyuno , Itaru Tanabe , Toshiaki Ishii , Hiroshi Kameyama
IPC分类号： H05K7/00
CPC分类号： H05K5/0034 , H05K3/202 , H05K2201/0969 , H05K2201/10409 , H05K2201/10598 , Y10T29/49002
摘要： An object of the present invention is to provide a mechanically and electrically integrated type electronic control apparatus which can be embedded in a compact mechanical part, and has a compact structure while having a high wiring freedom, a high heat dissipation and a high reliability. In a mechanically and electrically integrated type electronic control apparatus provided with a control signal generating part, and an angular wiring member connecting the control signal generating part and a controlled part controlled by a control signal of the control signal generating part, installed within a conductive casing, at least the wiring member has a fixed hole, a surface including the fixed hole is coated in an insulative manner, and the fixed hole is fixed to the conductive casing mechanically while keeping an insulating property.
摘要翻译：本发明的目的是提供一种可以嵌入在紧凑的机械部件中的机电一体型的电子控制装置，并且具有紧凑的结构，同时具有高布线自由度，高散热和高可靠性。在具有控制信号生成部件的机电一体化型电子控制装置中，以及连接控制信号生成部和被控制信号生成部的控制信号控制的受控部的角配线部件，至少布线构件具有固定孔，包括固定孔的表面以绝缘的方式被涂覆，并且固定孔在保持绝缘性的同时机械地固定到导电壳体上。

6. 发明授权

US07899602B2 Engine control unit 有权
标题翻译：发动机控制单元
公开(公告)号：US07899602B2
公开(公告)日：2011-03-01
申请号：US12126504
申请日：2008-05-23
申请人： Hideto Yoshinari , Yujiro Kaneko , Masahiko Asano , Nobutake Tsuyuno , Takehide Yokozuka
发明人： Hideto Yoshinari , Yujiro Kaneko , Masahiko Asano , Nobutake Tsuyuno , Takehide Yokozuka
IPC分类号： G06F19/00 , F02M51/00 , H05K7/20
CPC分类号： F02D41/20 , F02D41/3005 , F02D2041/2006 , F02D2400/18 , H01L25/162 , H01L25/165 , H01L2924/0002 , H01L2924/00
摘要： An engine control unit for controlling an automobile engine, which is equipped with a booster circuit for boosting the voltage of battery power source, an injector driving circuit for driving an injector by making use of a boosted high voltage, and a microcomputer for controlling the engine; wherein the engine control unit is featured in that an LC module mounted with a booster coil constituting the booster circuit and with an electrolytic capacitor, a power module mounted with a rectifying device constituting the booster circuit and the injector driving circuit and with a switching device, and a control circuit board mounted with the microcomputer and with a connector acting as an interface for an external member of the engine control unit are laminated each other. The power module is partitioned into at least two portions and fixedly contacted, through a heat radiation part, with a housing cover, and heat radiation fins are arranged on an outer surface of the housing cover where the power module is disposed.
摘要翻译：一种用于控制汽车发动机的发动机控制单元，其配备有用于升压电池电源的电压的升压电路，通过利用升压高压驱动喷射器的喷射器驱动电路和用于控制发动机的微型计算机 ; 其特征在于，安装有构成升压电路的升压线圈和电解电容器的LC模块，安装有构成升压电路的整流装置的电源模块和喷射器驱动电路以及开关装置，并且安装有微型计算机的控制电路板和用作发动机控制单元的外部构件的接口的连接器彼此层叠。功率模块被分隔成至少两个部分，并通过散热部分与壳体盖固定接触，并且散热翅片布置在壳体盖的设置功率模块的外表面上。

7. 发明授权

US6097100A Resin sealed semiconductor devices and a process for manufacturing the same 失效
标题翻译：树脂密封半导体器件及其制造方法
公开(公告)号：US6097100A
公开(公告)日：2000-08-01
申请号：US915334
申请日：1997-08-20
申请人： Shuji Eguchi , Yasuhide Sugawara , Toshiaki Ishii , Hiroyoshi Kokaku , Akira Nagai , Ryou Moteki , Ogino Masahiko , Masanori Segawa , Rie Hattori , Nobutake Tsuyuno , Takumi Ueno , Atsushi Nakamura , Asao Nishimura
发明人： Shuji Eguchi , Yasuhide Sugawara , Toshiaki Ishii , Hiroyoshi Kokaku , Akira Nagai , Ryou Moteki , Ogino Masahiko , Masanori Segawa , Rie Hattori , Nobutake Tsuyuno , Takumi Ueno , Atsushi Nakamura , Asao Nishimura
IPC分类号： H01L23/29 , H01L23/31 , H01L23/495 , H01L23/28
CPC分类号： H01L23/4951 , H01L23/293 , H01L23/3128 , H01L2224/05624 , H01L2224/32057 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/73215 , H01L2224/73265 , H01L2224/83385 , H01L2224/92 , H01L2224/92147 , H01L2224/92247 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2924/01012 , H01L2924/01013 , H01L2924/01039 , H01L2924/01079 , H01L2924/07802 , H01L2924/12044 , H01L2924/15311 , H01L2924/181
摘要： A resin encapsulated semiconductor element is encapsulated with resin composition containing an organic compound selected from the group consisting of organobromine compounds, organophosphorus compounds and organonitrogen compounds, an inorganic filler, and a metal borate. The obtained resin encapsulated semiconductor element has the same flame resistance as a conventional semiconductor element which is encapsulated with a resin composition containing a halogen and antimony compound, and furthermore, has remarkably improved reliabilities regarding moisture resistance and storing at a high temperature by effects of the contained metal borate for suppressing generation of or trapping released gas components, such as halogen or phosphorus, and others.
摘要翻译：树脂封装的半导体元件用含有有机化合物的树脂组合物包封，所述有机化合物选自有机溴化合物，有机磷化合物和有机氮化合物，无机填料和金属硼酸盐。所获得的树脂封装的半导体元件具有与用含有卤素和锑化合物的树脂组合物封装的常规半导体元件相同的阻燃性，并且还具有显着提高的耐湿性的可靠性和高温下的存储含有金属硼酸盐，用于抑制诸如卤素或磷的释放气体组分的产生或捕获等。

8. 发明申请

US20130175678A1 Power Semiconductor Module and Manufacturing Method Thereof 有权
标题翻译：功率半导体模块及其制造方法
公开(公告)号：US20130175678A1
公开(公告)日：2013-07-11
申请号：US13818490
申请日：2011-09-05
申请人： Eiichi Ide , Shinji Hiramitsu , Hiroshi Hozoji , Nobutake Tsuyuno , Kinya Nakatsu , Takeshi Tokuyama , Akira Matsushita , Yusuke Takagi
发明人： Eiichi Ide , Shinji Hiramitsu , Hiroshi Hozoji , Nobutake Tsuyuno , Kinya Nakatsu , Takeshi Tokuyama , Akira Matsushita , Yusuke Takagi
IPC分类号： H01L23/34 , H01L21/48
CPC分类号： H01L23/34 , H01L21/4825 , H01L23/36 , H01L23/4334 , H01L23/473 , H01L23/492 , H01L23/49524 , H01L23/49575 , H01L24/29 , H01L24/33 , H01L24/35 , H01L24/37 , H01L24/40 , H01L24/83 , H01L24/84 , H01L25/072 , H01L25/18 , H01L2224/29111 , H01L2224/32245 , H01L2224/32503 , H01L2224/33 , H01L2224/33181 , H01L2224/3521 , H01L2224/37013 , H01L2224/37124 , H01L2224/37147 , H01L2224/37639 , H01L2224/37644 , H01L2224/37655 , H01L2224/40137 , H01L2224/48091 , H01L2224/4847 , H01L2224/48472 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/1203 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H01L2924/00 , H01L2924/1306 , H01L2924/1305 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599 , H01L2924/01047 , H01L2924/01029
摘要： A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes. If there is an projection from a perpendicular direction by one of the main surfaces of the power semiconductor element, the second protrusion section is formed so that the projecting section on a specified side of the second protrusion surface overlaps the projecting section of the step section formed between the base section of the first conductor plate and the first protrusion section. The plural control electrodes on the power semiconductor element are formed along the specified side of the second protrusion surface.
摘要翻译：功率半导体模块包括在一个主表面上形成有多个控制电极的功率半导体元件，通过第一焊料材料连接到功率半导体元件的主表面之一的第一导体板和第二导体板通过第二焊料材料在功率半导体元件的另一个主表面上接合。在第一导体板上形成有从可应用的第一导体板的基部突出并且包括形成在上侧的第一突起表面的第一突出部。第二突起部分，包括形成在与功率半导体元件的主表面相对的一个表面上的第二突起表面。第一焊料材料插入在功率半导体元件和第一导体板之间，同时避免多个控制电极。如果通过功率半导体元件的一个主面从垂直方向突出，则第二突起部形成为使得第二突起表面的特定侧的突出部与形成的台阶部的突出部重叠在第一导体板的基部与第一突起部之间。功率半导体元件上的多个控制电极沿第二突出面的规定侧形成。

9. 发明申请

US20120300522A1 Semiconductor Device, Power Semiconductor Module and Power Conversion Device Equipped with Power Semiconductor Module 有权
标题翻译：半导体器件，功率半导体模块和配备功率半导体模块的电源转换器件
公开(公告)号：US20120300522A1
公开(公告)日：2012-11-29
申请号：US13499520
申请日：2010-08-24
申请人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Toshiya Satoh , Hideaki Ishikawa , Nobutake Tsuyuno , Shigeo Amagi
发明人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Toshiya Satoh , Hideaki Ishikawa , Nobutake Tsuyuno , Shigeo Amagi
IPC分类号： H01L23/52 , H02M7/48
CPC分类号： H02M7/003 , H01L23/473 , H01L23/49562 , H01L23/49575 , H01L24/34 , H01L25/072 , H01L2224/33 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2224/83801 , H01L2224/8384 , H01L2224/84801 , H01L2224/8484 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3025 , H05K7/1432 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device includes: a case with an opening formed thereat; a semiconductor element housed inside the case; a first conductor plate housed inside the case and positioned at one surface side of the semiconductor element; a second conductor plate housed inside the case and positioned at another surface side of the semiconductor element; a positive bus bar electrically connected to the first conductor plate, through which DC power is supplied; a negative bus bar electrically connected to the second conductor plate, through which DC power is supplied; a first resin member that closes off the opening at the case; and a second resin member that seals the semiconductor element, the first conductor plate and the second conductor plate and is constituted of a material other than a material constituting the first resin member.
摘要翻译：一种半导体器件包括：形成有开口的壳体; 容纳在壳体内的半导体元件; 容纳在壳体内并位于半导体元件的一个表面侧的第一导体板; 第二导体板，容纳在所述壳体内并且位于所述半导体元件的另一表面侧; 电连接到第一导体板的正母线，通过其提供直流电力; 电连接到第二导体板的负母线，通过其提供直流电力; 封闭壳体上的开口的第一树脂构件; 以及第二树脂构件，其密封半导体元件，第一导体板和第二导体板，并且由构成第一树脂构件的材料以外的材料构成。

10. 发明申请

US20050030823A1 Electronic circuit device 失效
标题翻译：电子电路装置
公开(公告)号：US20050030823A1
公开(公告)日：2005-02-10
申请号：US10910903
申请日：2004-08-04
申请人： Nobutake Tsuyuno , Toshiaki Ishii , Toshiya Satoh , Mitsuhiro Masuda
发明人： Nobutake Tsuyuno , Toshiaki Ishii , Toshiya Satoh , Mitsuhiro Masuda
IPC分类号： H01L23/28 , H01L21/56 , H01L23/36 , H01L25/04 , H01L25/16 , H01L25/18 , H05K1/03 , H05K3/00 , H05K3/28 , H05K3/38 , G11C8/02
CPC分类号： H01L23/4951 , H01L23/49531 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/165 , H01L25/18 , H01L2224/05599 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/49175 , H01L2224/85099 , H01L2224/85205 , H01L2224/85399 , H01L2924/01012 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/19107 , H05K1/0306 , H05K3/0061 , H05K3/284 , H05K3/386 , H05K2201/0209 , H05K2203/0315 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In order to provide a low-cost and high heat-radiating electronic circuit device featuring high compactness, little warpage, high air tightness, high moldability, high mass productivity, high reliability against thermal shocks, and high oil-proof reliability, a module structure made by packing a whole multi-layer circuit board which connects a semiconductor operating element, semiconductor memory elements, and passive elements thereon and part of a supporting material on which said multi-layer circuit board is placed into a single package by transfer-molding; wherein said multi-layer circuit board and said supporting material are bonded together with a compound metallic material made up from copper oxide and at least one metal selected from a set of gold, silver, and copper.
摘要翻译：为了提供具有高紧凑性，小弯曲性，高气密性，高成型性，高质量生产率，高耐热冲击可靠性和高耐油可靠性的低成本高散热电子电路装置，模块结构通过将通过转印成型将半导体操作元件，半导体存储元件和无源元件及其上放置有多层电路板的支撑材料的一部分封装在单个封装中的整个多层电路板制成; 其中所述多层电路板和所述支撑材料用由氧化铜和至少一种选自金，银和铜的金属组成的复合金属材料结合在一起。

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