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1. 发明授权

US09127346B2 Sputtering target material 有权
标题翻译：溅射靶材
公开(公告)号：US09127346B2
公开(公告)日：2015-09-08
申请号：US13305963
申请日：2011-11-29
申请人： Koichi Hasegawa , Nobuo Ishii
发明人： Koichi Hasegawa , Nobuo Ishii
IPC分类号： C22C5/08 , C23C14/14 , C22C5/06 , C23C14/20 , C23C14/34 , G11B7/258 , G11B7/259 , G11B7/2595 , G11B7/26
CPC分类号： C23C14/14 , C22C5/06 , C22C5/08 , C23C14/205 , C23C14/3414 , G11B7/258 , G11B7/259 , G11B7/2595 , G11B7/266 , Y10T428/21 , Y10T428/31678
摘要： This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.
摘要翻译：本发明提供具有高反射率和优异耐热性的溅射靶材料，它们由Ag基合金形成，该Ag基合金通过将特定的少量P加入到Ag中并使其合金而形成。

2. 发明授权

US07807019B2 Radial antenna and plasma processing apparatus comprising the same 有权
标题翻译：径向天线及其等离子体处理装置
公开(公告)号：US07807019B2
公开(公告)日：2010-10-05
申请号：US10343201
申请日：2001-08-02
申请人： Nobuo Ishii
发明人： Nobuo Ishii
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/3222 , H01J37/32192
摘要： Guide members (37) extending from the microwave entrance to a ring member (34) are arranged in the direction of propagation of microwave in a radial waveguide. The guide members (37) contribute to prevention of complex electromagnetic mode due to a microwave reflected from the peripheral portion of the radial waveguide. Therefore, a uniform plasma can be produced because the radiation into the process chamber is uniform even not by disposing any electromagnetic absorbing member at the peripheral portion of the radial waveguide. Since the microwave reflected from the peripheral portion of the radial waveguide can be used to produce a plasma if any electromagnetic absorbing member is not disposed, the plasma can be produced efficiently, and excessive heat is not generated.
摘要翻译：从微波入口延伸到环形构件（34）的导向构件（37）沿径向波导中的微波传播方向排列。引导构件（37）有助于防止由于从径向波导的周边部分反射的微波而导致的复杂电磁模式。因此，即使不在辐射波导的周边部设置电磁吸收体，因此能够产生均匀的等离子体，因为进入处理室的辐射是均匀的。由于如果没有设置电磁吸收部件，所以从径向波导的周边部反射的微波可以用于产生等离子体，所以能够有效地制造等离子体，不产生过多的热量。

3. 发明授权

US07457721B2 Method and apparatus for measuring small displacement 失效
标题翻译：测量小位移的方法和装置
公开(公告)号：US07457721B2
公开(公告)日：2008-11-25
申请号：US11587142
申请日：2005-04-22
申请人： Mitsuo Takeda , Wei Wang , Nobuo Ishii , Yoko Miyamoto
发明人： Mitsuo Takeda , Wei Wang , Nobuo Ishii , Yoko Miyamoto
IPC分类号： G01B11/00 , G06F19/00
CPC分类号： G01B11/002 , G01B11/024 , G01B11/24 , G06T7/001 , G06T7/262 , G06T7/529 , G06T7/579 , G06T2207/30136 , G06T2207/30164
摘要： Without using an interferometer, small displacement and/or three-dimensional shape of an object is detected in a noncontact way with high accuracy using pseudo-phase information calculated from e.g., a speckle pattern having a spatially random structure. A speckle image of the test object of the before displacement is obtained, and a spatial frequency spectrum is calculated by executing an N-dimensional Fourier transform for this. The complex analytic signal is obtained by setting the amplitude of frequency spectrum in the half plane including zero frequency in this amplitude distribution to zero, and executing the frequency spectrum amplitude in the half plane of the remainder in the inverse Fourier transform. And then, the amplitude value of this complex analytic signal is replaced with the constant value, a part of the obtained analytic signal domain is clipped, the phase information is calculated by the phase-only correlation function, and the cross-correlation peak in N-dimension is obtained. The displacement magnitude can be obtained by executing the above-mentioned method to the after displacement of the test object, and obtaining the difference of the cross-correlation peak before and after the displacement.
摘要翻译：在不使用干涉仪的情况下，使用从例如具有空间随机结构的散斑图案计算的伪相位信息，以非接触方式以非接触方式检测物体的小位移和/或三维形状。获得前一位移测试对象的斑点图像，并通过执行N维傅立叶变换来计算空间频谱。通过将该幅度分布中包括零频率的半平面中的频谱的幅度设置为零，并且在逆傅立叶变换中执行余数的半平面中的频谱幅度，获得复数分析信号。然后，将该复数分析信号的振幅值代入常数值，得到的分析信号域的一部分被剪切，相位信息由相位相关函数计算，N相互相关峰值 - 获得维度。可以通过对被检体的移位后的上述方法进行位移大小，得到位移前后的互相关峰的差。

4. 发明授权

US07186314B2 Plasma processor and plasma processing method 有权
标题翻译：等离子处理器和等离子体处理方法
公开(公告)号：US07186314B2
公开(公告)日：2007-03-06
申请号：US10543857
申请日：2004-01-26
申请人： Nobuo Ishii , Kibatsu Shinohara
发明人： Nobuo Ishii , Kibatsu Shinohara
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32211 , H01J37/32192 , H01P5/1022
摘要： A plasma processor includes a table on which a target object is to be placed, a vessel which accommodates the table and in which a plasma is to be generated by a high-frequency electromagnetic field, a high-frequency oscillator (30) which generates a high-frequency electromagnetic field, and a reference oscillator (34) which is lower in output power than the high-frequency oscillator (30) and stable in oscillation frequency. A reference signal generated by the reference oscillator (34) is injected into the high-frequency oscillator (30) to fix an oscillation frequency of the high-frequency oscillator (30) at a frequency of a reference signal. Therefore, accurate load matching is performed to improve an energy efficiency when an automatic matching device provided between the high-frequency oscillator (30) and vessel is designed based on the frequency of the reference signal.
摘要翻译：等离子体处理器包括：待放置目标物体的台，容纳台的容器，高频电磁场要产生等离子体;高频振荡器，高频电磁场以及输出功率比高频振荡器（30）低的基准振荡器（34），振荡频率稳定。由基准振荡器（34）产生的参考信号被注入到高频振荡器（30）中，以将高频振荡器（30）的振荡频率固定在参考信号的频率上。因此，当基于参考信号的频率设计在高频振荡器（30）和容器之间提供的自动匹配装置时，执行精确的负载匹配以提高能量效率。

5. 发明申请

US20070034601A1 Surface treating method and surface-treating apparatus 审中-公开
标题翻译：表面处理方法和表面处理装置
公开(公告)号：US20070034601A1
公开(公告)日：2007-02-15
申请号：US10550020
申请日：2003-09-22
申请人： Toshio Goto , Masaru Hori , Nobuo Ishii , Shoji Den
发明人： Toshio Goto , Masaru Hori , Nobuo Ishii , Shoji Den
IPC分类号： C03C15/00 , H01L21/302 , B44C1/22
CPC分类号： C23F4/00 , B23H5/08 , C23F3/06 , H01L21/3065 , H01L21/31055
摘要： The surface of a material for an electronic device is flattened by irradiating the surface of the material with at least part of plasma components, while supplying a liquid to the surface of the material for an electronic device. There are provided a method of treating the surfaces for favorably flattening the surface of the material for an electronic device or of the substrate for an electronic device, while suppressing damage to the material or to the substrate, and an apparatus for treating the surfaces.
摘要翻译：用于电子设备的材料的表面通过用至少部分等离子体部件照射材料的表面而平坦化，同时将液体供应到用于电子设备的材料的表面。提供了一种处理表面以有利地平坦化用于电子设备的材料的表面或用于电子设备的基板的方法，同时抑制对材料或基板的损坏，以及用于处理表面的设备。

6. 发明申请

US20060158381A1 Slot array antenna and plasma processing apparatus 审中-公开
标题翻译：插槽阵列天线和等离子体处理装置
公开(公告)号：US20060158381A1
公开(公告)日：2006-07-20
申请号：US11378223
申请日：2006-03-16
申请人： Nobuo Ishii , Makoto Ando , Masaharu Takahashi
发明人： Nobuo Ishii , Makoto Ando , Masaharu Takahashi
IPC分类号： H01Q13/10
CPC分类号： H01Q21/005
摘要： A slot array antenna, comprising: a power-feeding waveguide for feeding microwave power; and a plurality of rectangular radiating waveguides connected to a plurality of windows which are disposed along the longitudinal direction of the power feeding waveguide, so as to guide the microwave power from the plurality of windows to the outside of the antenna. In each of the radiating waveguides, the interval “d” between the centers of gravity of slot pairs or slots is substantially the same as the wavelength m of the microwave in the rectangular radiating waveguide. A slot array antenna and a plasma processing apparatus are provided, which are capable of increasing the plasma density in the plasma-processing chamber.
摘要翻译：一种插槽阵列天线，包括：用于馈送微波功率的馈电波导; 以及多个矩形辐射波导，其连接到沿着所述馈电波导的纵向设置的多个窗口，以将微波功率从多个窗口引导到天线的外部。在每个辐射波导中，槽对或槽之间的重心之间的间隔“d”与矩形辐射波导中的微波的波长m基本相同。提供了一种槽阵列天线和等离子体处理装置，其能够增加等离子体处理室中的等离子体密度。

7. 发明授权

US07071442B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07071442B2
公开(公告)日：2006-07-04
申请号：US11009086
申请日：2004-12-13
申请人： Nobuo Ishii , Kibatsu Shinohara
发明人： Nobuo Ishii , Kibatsu Shinohara
IPC分类号： B23K10/00
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32293
摘要： A plasma processing apparatus includes a processing container 53, a mounting table 61 arranged in the processing container 53 to support a wafer W, a sealing plate 55 opposed to the wafer W supported by the mounting table 61, an annular antenna 73 arranged on the sealing plate 55 and consisting of an annular waveguide to introduce a microwave into the processing container 53 through the sealing plate 55, the annular antenna 73 being arranged so that a plane containing an annular waveguide path defined by the annular waveguide is generally parallel with the sealing plate 55, a directional coupler 79 arranged on the periphery of the annular antenna 73, a propagation waveguide 81 connected to the directional coupler 79 and a microwave oscillator 83 connected to the propagation waveguide 81. “Accordingly, it is possible to form an uniform microwave in the antenna, so that an uniform plasma can be produced in the processing container”.
摘要翻译：等离子体处理装置包括处理容器53，布置在处理容器53中以支撑晶片W的安装台61，与由安装台61支撑的晶片W相对的密封板55，设置在密封件上的环形天线73 板55由环形波导构成，环形波导通过密封板55将微波引入处理容器53中，环形天线73布置成使得包含由环形波导限定的环形波导路径的平面大致平行于密封板 55是配置在环形天线73周边的定向耦合器79，与定向耦合器79连接的传播波导81和与传播波导81连接的微波振荡器83。因此，可以在天线中形成均匀的微波，从而能够在处理容器中产生均匀的等离子体。

8. 发明申请

US20060005929A1 Plasma processing device and plasma generating method 审中-公开
标题翻译：等离子体处理装置和等离子体生成方法
公开(公告)号：US20060005929A1
公开(公告)日：2006-01-12
申请号：US10507053
申请日：2003-03-12
申请人： Nobuo Ishii , Yasuyoshi Yasaka , Masaharu Takahashi , Makoto Ando
发明人： Nobuo Ishii , Yasuyoshi Yasaka , Masaharu Takahashi , Makoto Ando
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/3222 , H01J37/32192
摘要： The length (L) of a slot (26) increases monotonously from the central portion (A) of an antenna surface (28) in the radial direction, and reaches the maximal value at the first intermediate portion (C). The maximal value is maintained from the first intermediate portion (C) until the peripheral portion (B). When compared to a case wherein the length of the slot is increased monotonously from the central portion of the antenna surface (28) until its peripheral portion, the power radiated from a slot antenna can increase. Accordingly, the power which is not radiated from the slot antenna but remains in it decreases, so that the reflected power from the slot antenna decreases.
摘要翻译：槽26的长度（L）从径向的天线面28的中心部（A）单调增加，达到第一中间部（C）的最大值。最大值从第一中间部分（C）直到周边部分（B）保持。当与天线表面（28）的中心部分直到其周边部分单调增加时隙的情况相比，从缝隙天线辐射的功率可能增加。因此，没有从缝隙天线辐射但保持在其中的功率减小，使得来自缝隙天线的反射功率减小。

9. 发明申请

US20050173382A1 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US20050173382A1
公开(公告)日：2005-08-11
申请号：US11009086
申请日：2004-12-13
申请人： Nobuo Ishii , Kibatsu Shinohara
发明人： Nobuo Ishii , Kibatsu Shinohara
IPC分类号： H01J37/32 , B23K9/00 , H05B6/64
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32293
摘要： A plasma processing apparatus includes a processing container 53, a mounting table 61 arranged in the processing container 53 to support a wafer W, a sealing plate 55 opposed to the wafer W supported by the mounting table 61, an annular antenna 73 arranged on the sealing plate 55 and consisting of an annular waveguide to introduce a microwave into the processing container 53 through the sealing plate 55, the annular antenna 73 being arranged so that a plane containing an annular waveguide path defined by the annular waveguide is generally parallel with the sealing plate 55, a directional coupler 79 arranged on the periphery of the annular antenna 73, a propagation waveguide 81 connected to the directional coupler 79 and a microwave oscillator 83 connected to the propagation waveguide 81. Accordingly, it is possible to form an uniform microwave in the antenna, so that an uniform plasma can be produced in the processing container.
摘要翻译：等离子体处理装置包括处理容器53，布置在处理容器53中以支撑晶片W的安装台61，与由安装台61支撑的晶片W相对的密封板55，设置在密封件上的环形天线73 板55由环形波导构成，环形波导通过密封板55将微波引入处理容器53中，环形天线73布置成使得包含由环形波导限定的环形波导路径的平面大致平行于密封板 55是配置在环形天线73的周边的定向耦合器79，与定向耦合器79连接的传播波导81和与传播波导81连接的微波振荡器83.因此，可以在天线，使得可以在处理容器中产生均匀的等离子体。

10. 发明申请

US20050087304A1 Plasma processing system 审中-公开
标题翻译：等离子体处理系统
公开(公告)号：US20050087304A1
公开(公告)日：2005-04-28
申请号：US10510389
申请日：2003-04-08
申请人： Nobuo Ishii
发明人： Nobuo Ishii
IPC分类号： H05H1/46 , H01J37/32 , H01L21/205 , H01L21/3065 , C23F1/00
CPC分类号： H01J37/3222 , H01J37/32192
摘要： An antenna portion includes a radial waveguide made of metal and connected to a lower end of a waveguide pipe, and a slot antenna. A top plate is arranged above a chamber. A layer of air is formed between the antenna portion and the top plate. Half a difference between an inner diameter B of a region, in which the top plate and the antenna portion are present, and an inner diameter A of the radial waveguide is equal to a product of a wave length λg of the microwave, which is based on a composite dielectric constant resulting from a dielectric constant of the top plate and a dielectric constant of an atmosphere (air layer) in the region containing the top plate and the antenna portion, and zero or a natural number. An inner diameter C of the chamber is equal to or shorter than the inner diameter A of the radial waveguide. Thereby, the electromagnetic field for forming the plasma production region is controlled to achieve a uniform plasma density.
摘要翻译：天线部分包括由金属制成并连接到波导管的下端的径向波导和缝隙天线。顶板布置在室的上方。在天线部分和顶板之间形成一层空气。其中存在顶板和天线部分的区域的内径B与径向波导管的内径A之间的一半的差异等于波长λ

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