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1. 发明授权

US08923567B2 Apparatus and method for predicting solar irradiance variation 有权
标题翻译：用于预测太阳辐照度变化的装置和方法
公开(公告)号：US08923567B2
公开(公告)日：2014-12-30
申请号：US13329450
申请日：2011-12-19
申请人： Yi Yao , Peter Tu , Ming-Ching Chang , Li Guan , Yan Tong
发明人： Yi Yao , Peter Tu , Ming-Ching Chang , Li Guan , Yan Tong
IPC分类号： G06K9/00
CPC分类号： G01W1/10 , F24S50/00 , F24S2201/00 , H01L31/02021 , Y02E10/40 , Y02E10/50
摘要： An apparatus and method, as may be used for predicting solar irradiance variation, are provided. The apparatus may include a solar irradiance predictor processor (10) configured to process a sequence of images (e.g., sky images). The irradiance predictor processor may include a cloud classifier module (18) configured to classify respective pixels of an image of a cloud to indicate a solar irradiance-passing characteristic of at least a portion of the cloud. A cloud motion predictor (22) may be configured to predict motion of the cloud over a time horizon. An event predictor (24) may be configured to predict over the time horizon occurrence of a solar obscuration event. The prediction of the solar obscuration event may be based on the predicted motion of the cloud. The event predictor may include an irradiance variation prediction for the obscuration event based on the solar irradiance-passing characteristic of the cloud.
摘要翻译：提供了可用于预测太阳辐照度变化的装置和方法。该装置可以包括被配置为处理图像序列（例如，天空图像）的太阳辐照度预测器处理器（10）。辐照度预测器处理器可以包括云分类器模块（18），其被配置为对云的图像的各个像素进行分类，以指示云的至少一部分的太阳辐射通过特性。云运动预测器（22）可以被配置为预测云在时间范围内的运动。事件预测器（24）可以被配置为在太阳遮挡事件的时间范围内发生预测。太阳遮蔽事件的预测可以基于云的预测运动。事件预测器可以包括基于云的太阳辐射通过特性的遮蔽事件的辐照度变化预测。

2. 发明申请

US20140001559A1 Dummy Gate Electrode of Semiconductor Device 有权
公开(公告)号：US20140001559A1
公开(公告)日：2014-01-02
申请号：US13538734
申请日：2012-06-29
申请人： Jr-Jung Lin , Chih-Han Lin , Ming-Ching Chang
发明人： Jr-Jung Lin , Chih-Han Lin , Ming-Ching Chang
IPC分类号： H01L27/088 , H01L21/283
CPC分类号： H01L29/66795 , H01L21/30604 , H01L21/823431 , H01L29/42372 , H01L29/66545 , H01L29/6681
摘要： The disclosure relates to a dummy gate electrode of a semiconductor device. An embodiment comprises a substrate comprising a first surface; an insulation region covering a portion of the first surface, wherein the top of the insulation region defines a second surface; and a dummy gate electrode over the second surface, wherein the dummy gate electrode comprises a bottom and a base broader than the bottom, wherein a ratio of a width of the bottom to a width of the base is from about 0.5 to about 0.9.

3. 发明申请

US20130320410A1 METAL GATE ELECTRODE OF A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的金属栅极电极
公开(公告)号：US20130320410A1
公开(公告)日：2013-12-05
申请号：US13484047
申请日：2012-05-30
申请人： Jr-Jung Lin , Chih-Han Lin , Jin-Aun Ng , Ming-Ching Chang , Chao-Cheng Chen
发明人： Jr-Jung Lin , Chih-Han Lin , Jin-Aun Ng , Ming-Ching Chang , Chao-Cheng Chen
IPC分类号： H01L29/78 , H01L21/283
CPC分类号： H01L29/78 , H01L21/283 , H01L21/823842 , H01L29/4966 , H01L29/4983 , H01L29/66545
摘要： The invention relates to integrated circuit fabrication, and more particularly to a metal gate electrode. An exemplary structure for a semiconductor device comprises a substrate comprising a major surface; a first rectangular gate electrode on the major surface comprising a first layer of multi-layer material; a first dielectric material adjacent to one side of the first rectangular gate electrode; and a second dielectric material adjacent to the other 3 sides of the first rectangular gate electrode, wherein the first dielectric material and the second dielectric material collectively surround the first rectangular gate electrode.
摘要翻译：本发明涉及集成电路制造，更具体地涉及金属栅电极。半导体器件的示例性结构包括：包括主表面的衬底; 主表面上的第一矩形栅电极，包括第一层多层材料; 与第一矩形栅电极的一侧相邻的第一电介质材料; 以及与所述第一矩形栅电极的其他3侧相邻的第二电介质材料，其中所述第一电介质材料和所述第二电介质材料共同围绕所述第一矩形栅电极。

4. 发明授权

US08507979B1 Semiconductor integrated circuit with metal gate 有权
标题翻译：半导体集成电路与金属门
公开(公告)号：US08507979B1
公开(公告)日：2013-08-13
申请号：US13563470
申请日：2012-07-31
申请人： Yuan-Sheng Huang , Ming-Ching Chang , Chao-Cheng Chen
发明人： Yuan-Sheng Huang , Ming-Ching Chang , Chao-Cheng Chen
IPC分类号： H01L29/66
CPC分类号： H01L29/4966 , H01L29/517 , H01L29/66477 , H01L29/66545 , H01L29/78
摘要： A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a semiconductor substrate and forming a gate trench therein. The method also includes filling in the gate trench partially with a work-function (WF) metal stack, and filling in the remaining gate trench with a dummy-filling-material (DFM) over the WF metal stack. A sub-gate trench is formed by etching-back the WF metal stack in the gate trench, and is filled with an insulator cap to form an isolation region in the gate trench. The DFM is fully removed to from a MG-center trench (MGCT) in the gate trench, which is filled with a fill metal.
摘要翻译：公开了制造半导体集成电路（IC）的方法。该方法包括提供半导体衬底并在其中形成栅极沟槽。该方法还包括用工作功能（WF）金属堆叠部分地填充栅极沟槽，并且在WF金属堆叠上用虚拟填充材料（DFM）填充剩余的栅极沟槽。通过蚀刻在栅极沟槽中的WF金属堆叠形成子栅极沟槽，并且填充有绝缘体帽以在栅极沟槽中形成隔离区域。 DFM从栅极沟槽中的MG-中心沟槽（MGCT）被完全去除，其填充有填充金属。

5. 发明申请

US20130138499A1 USAGE MEASURENT TECHNIQUES AND SYSTEMS FOR INTERACTIVE ADVERTISING 审中-公开
标题翻译：用于互动广告的测量技术和系统
公开(公告)号：US20130138499A1
公开(公告)日：2013-05-30
申请号：US13308386
申请日：2011-11-30
申请人： Peter Henry Tu , Mark Lewis Grabb , Xiaoming Liu , Ting Yu , Yi Yao , Dashan Gao , Ming-Ching Chang
发明人： Peter Henry Tu , Mark Lewis Grabb , Xiaoming Liu , Ting Yu , Yi Yao , Dashan Gao , Ming-Ching Chang
IPC分类号： G06Q30/02
摘要： An advertising system is disclosed. In one embodiment, the system includes an advertising display configured to provide an advertisement to potential customers and a camera configured to capture images of the potential customers when the potential customers pass the advertising display. The system may also include an image processing system having a processor and a memory. The memory may include application instructions for execution by the processor, and the image processing system may be configured to execute the application instructions to derive usage characteristics of the potential customers with respect to the advertising display through analysis of the captured images. Additional methods, systems, and articles of manufacture are also disclosed.
摘要翻译：公开了广告系统。在一个实施例中，系统包括被配置为向潜在客户提供广告的广告显示器和被配置为当潜在客户通过广告显示时捕获潜在客户的图像的照相机。该系统还可以包括具有处理器和存储器的图像处理系统。存储器可以包括用于由处理器执行的应用指令，并且图像处理系统可以被配置为执行应用指令以通过分析所捕获的图像来导出相对于广告显示的潜在客户的使用特性。还公开了附加的方法，系统和制品。

6. 发明申请

US20100203734A1 METHOD OF PITCH HALVING 有权
标题翻译：倾斜方法
公开(公告)号：US20100203734A1
公开(公告)日：2010-08-12
申请号：US12370152
申请日：2009-02-12
申请人： Ming-Feng Shieh , Shinn-Sheng Yu , Anthony Yen , Ming-Ching Chang , Jeff J. Xu
发明人： Ming-Feng Shieh , Shinn-Sheng Yu , Anthony Yen , Ming-Ching Chang , Jeff J. Xu
IPC分类号： H01L21/467
CPC分类号： H01L21/3086 , H01L21/3088 , H01L21/823828 , H01L21/823871 , Y10S438/947
摘要： The present disclosure provides a method of fabricating a semiconductor device that includes forming a mask layer over a substrate, forming a dummy layer having a first dummy feature and a second dummy feature over the mask layer, forming first and second spacer roofs to cover a top portion of the first and second dummy features, respectively, and forming first and second spacer sleeves to encircle side portions of the first and second dummy features, respectively, removing the first spacer roof and the first dummy feature while protecting the second dummy feature, removing a first end portion and a second end portion of the first spacer sleeve to form spacer fins, and patterning the mask layer using the spacer fins as a first mask element and the second dummy feature as a second mask element.
摘要翻译：本公开提供了一种制造半导体器件的方法，该半导体器件包括在衬底上形成掩模层，在掩模层上形成具有第一虚拟特征和第二虚拟特征的虚设层，形成第一和第二间隔物顶部以覆盖顶部分别形成第一和第二间隔套筒以分别围绕第一和第二虚拟特征的侧面部分，去除第一间隔物顶部和第一虚拟特征，同时保护第二虚拟特征，去除第一间隔套筒的第一端部和第二端部，以形成间隔件翅片，并且使用间隔件翅片作为第一掩模元件并将第二虚拟特征图案化为掩模层作为第二掩模元件。

7. 发明授权

US09287179B2 Composite dummy gate with conformal polysilicon layer for FinFET device 有权
标题翻译：用于FinFET器件的具有适形多晶硅层的复合伪栅极
公开(公告)号：US09287179B2
公开(公告)日：2016-03-15
申请号：US13353975
申请日：2012-01-19
申请人： Yuan-Sheng Huang , Tzu-Yen Hsieh , Ming-Ching Chang , Chao-Cheng Chen , Chia-Jen Chen
发明人： Yuan-Sheng Huang , Tzu-Yen Hsieh , Ming-Ching Chang , Chao-Cheng Chen , Chia-Jen Chen
IPC分类号： H01L29/78 , H01L21/8238 , H01L29/66 , H01L27/092
CPC分类号： H01L29/66545 , H01L21/823807 , H01L21/823821 , H01L21/823828 , H01L27/0924 , H01L29/0649 , H01L29/66795 , H01L29/785
摘要： The present disclosure involves a FinFET. The FinFET includes a fin structure formed over a substrate. A gate dielectric layer is least partially wrapped around a segment of the fin structure. The gate dielectric layer contains a high-k gate dielectric material. The FinFET includes a polysilicon layer conformally formed on the gate dielectric layer. The FinFET includes a metal gate electrode layer formed over the polysilicon layer. The present disclosure provides a method of fabricating a FinFET. The method includes providing a fin structure containing a semiconductor material. The method includes forming a gate dielectric layer over the fin structure, the gate dielectric layer being at least partially wrapped around the fin structure. The method includes forming a polysilicon layer over the gate dielectric layer, wherein the polysilicon layer is formed in a conformal manner. The method includes forming a dummy gate layer over the polysilicon layer.
摘要翻译：本公开涉及FinFET。 FinFET包括在衬底上形成的翅片结构。栅介质层最少部分地缠绕在翅片结构的一段上。栅介质层包含高k栅介质材料。 FinFET包括在栅介质层上共形形成的多晶硅层。 FinFET包括在多晶硅层上形成的金属栅极电极层。本公开提供了制造FinFET的方法。该方法包括提供包含半导体材料的翅片结构。该方法包括在鳍结构上方形成栅极电介质层，栅介质层至少部分地围绕翅片结构缠绕。该方法包括在栅介质层上形成多晶硅层，其中多晶硅层以保形方式形成。该方法包括在多晶硅层上形成伪栅极层。

8. 发明申请

US20130252425A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE 有权
标题翻译：形成半导体器件的方法
公开(公告)号：US20130252425A1
公开(公告)日：2013-09-26
申请号：US13428923
申请日：2012-03-23
申请人： Chih-Han LIN , Ming-Ching CHANG , Ryan Chia-Jen CHEN , Yih-Ann LIN , Jr-Jung LIN
发明人： Chih-Han LIN , Ming-Ching CHANG , Ryan Chia-Jen CHEN , Yih-Ann LIN , Jr-Jung LIN
IPC分类号： H01L21/3105 , H01L21/306
CPC分类号： H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/76816
摘要： A method includes providing a first mask pattern over a substrate, forming first spacers adjoining sidewalls of the first mask pattern, removing the first mask pattern, forming second spacers adjoining sidewalls of the first spacers, forming a filling layer over the substrate and between the second spacers, and forming a second mask pattern over the substrate.
摘要翻译：一种方法包括在衬底上提供第一掩模图案，形成与第一掩模图案的侧壁相邻的第一间隔物，去除第一掩模图案，形成邻接第一间隔物的侧壁的第二间隔物，在衬底上形成填充层，并且在衬底上形成第二掩模图案。

9. 发明申请

US20130152997A1 APPARATUS AND METHOD FOR PREDICTING SOLAR IRRADIANCE VARIATION 有权
标题翻译：用于预测太阳辐射变化的装置和方法
公开(公告)号：US20130152997A1
公开(公告)日：2013-06-20
申请号：US13329450
申请日：2011-12-19
申请人： Yi Yao , Peter Tu , Ming-Ching Chang , Li Guan , Yan Tong
发明人： Yi Yao , Peter Tu , Ming-Ching Chang , Li Guan , Yan Tong
IPC分类号： G06K9/00 , H01L31/042
CPC分类号： G01W1/10 , F24S50/00 , F24S2201/00 , H01L31/02021 , Y02E10/40 , Y02E10/50
摘要： An apparatus and method, as may be used for predicting solar irradiance variation, are provided. The apparatus may include a solar irradiance predictor processor (10) configured to process a sequence of images (e.g., sky images). The irradiance predictor processor may include a cloud classifier module (18) configured to classify respective pixels of an image of a cloud to indicate a solar irradiance-passing characteristic of at least a portion of the cloud. A cloud motion predictor (22) may be configured to predict motion of the cloud over a time horizon. An event predictor (24) may be configured to predict over the time horizon occurrence of a solar obscuration event. The prediction of the solar obscuration event may be based on the predicted motion of the cloud. The event predictor may include an irradiance variation prediction for the obscuration event based on the solar irradiance-passing characteristic of the cloud.
摘要翻译：提供了可用于预测太阳辐照度变化的装置和方法。该装置可以包括被配置为处理图像序列（例如，天空图像）的太阳辐照度预测器处理器（10）。辐照度预测器处理器可以包括云分类器模块（18），其被配置为对云的图像的各个像素进行分类，以指示云的至少一部分的太阳辐射通过特性。云运动预测器（22）可以被配置为预测云在时间范围内的运动。事件预测器（24）可以被配置为在太阳遮挡事件的时间范围内发生预测。太阳遮蔽事件的预测可以基于云的预测运动。事件预测器可以包括基于云的太阳辐射通过特性的遮蔽事件的辐照度变化预测。

10. 发明申请

US20120108046A1 Patterning Methodology for Uniformity Control 有权
标题翻译：均匀性控制的图案化方法
公开(公告)号：US20120108046A1
公开(公告)日：2012-05-03
申请号：US13281862
申请日：2011-10-26
申请人： Yu Chao Lin , Ming-Ching Chang , Yih-Ann Lin , Ryan Chia-Jen Chen , Chao-Cheng Chen
发明人： Yu Chao Lin , Ming-Ching Chang , Yih-Ann Lin , Ryan Chia-Jen Chen , Chao-Cheng Chen
IPC分类号： H01L21/28 , H01L21/308
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/28194 , H01L21/31122 , H01L21/31138 , H01L21/823437 , H01L29/495 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a patternable layer over a substrate. The method includes forming a first layer over the patternable layer. The method includes forming a second layer over the first layer. The second layer is substantially thinner than the first layer. The method includes patterning the second layer with a photoresist material through a first etching process to form a patterned second layer. The method includes patterning the first layer with the patterned second layer through a second etching process to form a patterned first layer. The first and second layers have substantially different etching rates during the second etching process. The method includes patterning the patternable layer with the patterned first layer through a third etching process.
摘要翻译：本公开提供了制造半导体器件的方法。该方法包括在衬底上形成可图案化层。该方法包括在可图案层上形成第一层。该方法包括在第一层上形成第二层。第二层比第一层薄得多。该方法包括通过第一蚀刻工艺用光致抗蚀剂材料图案化第二层以形成图案化的第二层。该方法包括通过第二蚀刻工艺将具有图案化的第二层的第一层图案化以形成图案化的第一层。第一和第二层在第二蚀刻工艺期间具有显着不同的蚀刻速率。该方法包括通过第三蚀刻工艺对具有图案化的第一层的图案化层进行图案化。

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