专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09613834B2 Replaceable upper chamber section of plasma processing apparatus 有权
公开(公告)号：US09613834B2
公开(公告)日：2017-04-04
申请号：US12748141
申请日：2010-03-26
申请人： Leonard J. Sharpless , Harmeet Singh , Michael S. Kang
发明人： Leonard J. Sharpless , Harmeet Singh , Michael S. Kang
IPC分类号： H01L21/3065 , H01L21/67 , H01J37/32
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32458 , H01J37/32467 , H01L21/67126 , H01L21/6719
摘要： A replaceable upper chamber section of a plasma reaction chamber in which semiconductor substrates can be processed comprises a monolithic metal cylinder having a conical inner surface which is widest at a lower end thereof, an upper flange extending horizontally outward away from the conical inner surface and a lower flange extending horizontally away from the conical inner surface. The cylinder includes an upper annular vacuum sealing surface adapted to seal against a dielectric window of the plasma chamber and a lower annular vacuum sealing surface adapted to seal against a bottom section of the plasma chamber. A thermal mass at an upper portion of the cylinder is effective to provide azimuthal temperature uniformity of the conical inner surface. A thermal choke is located at a lower portion of the cylinder and is effective to minimize transfer of heat across the lower vacuum sealing surface.

2. 发明授权

US08845856B2 Edge ring assembly for plasma etching chambers 有权
标题翻译：用于等离子体蚀刻室的边缘环组件
公开(公告)号：US08845856B2
公开(公告)日：2014-09-30
申请号：US12957932
申请日：2010-12-01
申请人： Michael S. Kang , Michael C. Kellogg , Migùel A. Saldana , Travis R. Taylor
发明人： Michael S. Kang , Michael C. Kellogg , Migùel A. Saldana , Travis R. Taylor
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01J37/32642 , H01J37/32091
摘要： An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring.
摘要翻译：用于等离子体蚀刻室的边缘环组件包括电介质耦合环和导电边缘环。在一个实施例中，电介质耦合环具有从其内周向轴向上延伸的环形突起。电介质耦合环适于围绕等离子体蚀刻室中的衬底支撑件。导电边缘环适于围绕电介质耦合环的环形突起。支撑在基板支撑件上的基板突出到基板支撑件上并且覆盖在电介质耦合环的环形突起和导电边缘环的一部分上。在另一个实施例中，电介质耦合环具有矩形横截面。电介质耦合环和导电边缘环适于围绕等离子体蚀刻室中的衬底支撑。支撑在基板支撑件上的基板突出到基板支撑件上并且覆盖在导电边缘环的一部分上。

3. 发明授权

US08313635B2 Bare aluminum baffles for resist stripping chambers 有权
标题翻译：用于抗剥离室的裸铝挡板
公开(公告)号：US08313635B2
公开(公告)日：2012-11-20
申请号：US12873906
申请日：2010-09-01
申请人： Fred D. Egley , Michael S. Kang , Anthony L. Chen , Jack Kuo , Hong Shih , Duane Outka , Bruno Morel
发明人： Fred D. Egley , Michael S. Kang , Anthony L. Chen , Jack Kuo , Hong Shih , Duane Outka , Bruno Morel
IPC分类号： B23H3/00
CPC分类号： H01J37/32633 , C23C8/02 , C23C8/10 , G03F7/427 , H01J37/32357 , H01J2237/3342
摘要： Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.
摘要翻译：裸铝挡板适用于抗蚀剂剥离室，并且包括外部氧化铝层，其可以是天然氧化铝层或通过化学处理新的或使用的裸铝挡板形成薄的外部氧化铝层而形成的层。

4. 发明申请

US20110126984A1 EDGE RING ASSEMBLY FOR PLASMA ETCHING CHAMBERS 有权
标题翻译：等离子体消声器的边缘环组件
公开(公告)号：US20110126984A1
公开(公告)日：2011-06-02
申请号：US12957932
申请日：2010-12-01
申请人： Michael S. Kang , Michael C. Kellogg , Mlgúel A. Saldana , Travis R. Taylor
发明人： Michael S. Kang , Michael C. Kellogg , Mlgúel A. Saldana , Travis R. Taylor
IPC分类号： H01L21/3065
CPC分类号： H01J37/32642 , H01J37/32091
摘要： An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring.
摘要翻译：用于等离子体蚀刻室的边缘环组件包括电介质耦合环和导电边缘环。在一个实施例中，电介质耦合环具有从其内周向轴向上延伸的环形突起。电介质耦合环适于围绕等离子体蚀刻室中的衬底支撑件。导电边缘环适于围绕电介质耦合环的环形突起。支撑在基板支撑件上的基板突出到基板支撑件上并且覆盖在介质耦合环的环形突起和导电边缘环的一部分上。在另一个实施例中，电介质耦合环具有矩形横截面。电介质耦合环和导电边缘环适于围绕等离子体蚀刻室中的衬底支撑。支撑在基板支撑件上的基板突出到基板支撑件上并且覆盖在导电边缘环的一部分上。

5. 发明申请

US20100319813A1 BARE ALUMINUM BAFFLES FOR RESIST STRIPPING CHAMBERS 有权
标题翻译：用于耐腐蚀剥离室的铝合金棒
公开(公告)号：US20100319813A1
公开(公告)日：2010-12-23
申请号：US12873906
申请日：2010-09-01
申请人： Fred D. Egley , Michael S. Kang , Anthony L. Chen , Jack Kuo , Hong Shih , Duane Outka , Bruno Morel
发明人： Fred D. Egley , Michael S. Kang , Anthony L. Chen , Jack Kuo , Hong Shih , Duane Outka , Bruno Morel
IPC分类号： C23C8/02 , C25F3/30 , C23C8/10 , C25F3/20
CPC分类号： H01J37/32633 , C23C8/02 , C23C8/10 , G03F7/427 , H01J37/32357 , H01J2237/3342
摘要： Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.
摘要翻译：裸铝挡板适用于抗蚀剂剥离室，并且包括外部氧化铝层，其可以是天然氧化铝层或通过化学处理新的或使用的裸铝挡板形成薄的外部氧化铝层而形成的层。

6. 发明授权

US07811409B2 Bare aluminum baffles for resist stripping chambers 有权
标题翻译：用于抗剥离室的裸铝挡板
公开(公告)号：US07811409B2
公开(公告)日：2010-10-12
申请号：US11987419
申请日：2007-11-29
申请人： Fred D. Egley , Michael S. Kang , Anthony L. Chen , Jack Kuo , Hong Shih , Duane Outka , Bruno Morel
发明人： Fred D. Egley , Michael S. Kang , Anthony L. Chen , Jack Kuo , Hong Shih , Duane Outka , Bruno Morel
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32633 , C23C8/02 , C23C8/10 , G03F7/427 , H01J37/32357 , H01J2237/3342
摘要： Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.
摘要翻译：裸铝挡板适用于抗蚀剂剥离室，并且包括外部氧化铝层，其可以是天然氧化铝层或通过化学处理新的或使用的裸铝挡板形成薄的外部氧化铝层而形成的层。

7. 发明申请

US20100243164A1 REPLACEABLE UPPER CHAMBER SECTION OF PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工装置的可更换的上部室
公开(公告)号：US20100243164A1
公开(公告)日：2010-09-30
申请号：US12748141
申请日：2010-03-26
申请人： Leonard J. Sharpless , Harmeet Singh , Michael S. Kang
发明人： Leonard J. Sharpless , Harmeet Singh , Michael S. Kang
IPC分类号： H01L21/306 , C23F1/08 , C23C16/00
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32458 , H01J37/32467 , H01L21/67126 , H01L21/6719
摘要： A replaceable upper chamber section of a plasma reaction chamber in which semiconductor substrates can be processed comprises a monolithic metal cylinder having a conical inner surface which is widest at an upper end thereof, an upper flange extending horizontally outward away from the conical inner surface and a lower flange extending horizontally away from the conical inner surface. The cylinder includes an upper annular vacuum sealing surface adapted to seal against a dielectric window of the plasma chamber and a lower annular vacuum sealing surface adapted to seal against a bottom section of the plasma chamber. A thermal mass at an upper portion of the cylinder is defined by a portion of the cylinder between the conical inner surface and an outer surface extending vertically from the upper flange, the thermal mass being effective to provide azimuthal temperature uniformity of the conical inner surface. A thermal choke is located at a lower portion of the cylinder and is effective to minimize transfer of heat across the lower vacuum sealing surface. The thermal choke is defined by a thin metal section having a thickness of less than 0.25 inch and extending at least 25% of the length of the conical inner surface.
摘要翻译：可处理半导体衬底的等离子体反应室的可更换的上腔室部分包括具有在其上端最宽的圆锥形内表面的整体式金属圆筒，从锥形内表面向外水平向外延伸的上凸缘和下凸缘从锥形内表面水平地延伸。气缸包括适于密封等离子体室的电介质窗口的上环形真空密封表面和适于密封等离子体室底部的下环形真空密封表面。气缸上部的热质量由圆筒内部表面和从上凸缘垂直延伸的外表面之间的一部分限定，该热质量有效地提供圆锥形内表面的方位角温度均匀性。热扼流器位于气缸的下部，并且有效地最小化穿过下真空密封表面的热传递。热扼流圈由厚度小于0.25英寸且延伸至锥形内表面长度的至少25％的薄金属部分限定。

8. 发明申请

US20080178906A1 Bare aluminum baffles for resist stripping chambers 有权
标题翻译：用于抗剥离室的裸铝挡板
公开(公告)号：US20080178906A1
公开(公告)日：2008-07-31
申请号：US11987419
申请日：2007-11-29
申请人： Fred D. Egley , Michael S. Kang , Anthony L. Chen , Jack Kuo , Hong Shih , Duane Outka , Bruno Morel
发明人： Fred D. Egley , Michael S. Kang , Anthony L. Chen , Jack Kuo , Hong Shih , Duane Outka , Bruno Morel
IPC分类号： B08B7/02 , B08B13/00 , B05D3/10 , C25F3/16
CPC分类号： H01J37/32633 , C23C8/02 , C23C8/10 , G03F7/427 , H01J37/32357 , H01J2237/3342
摘要： Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.
摘要翻译：裸铝挡板适用于抗蚀剂剥离室，并且包括外部氧化铝层，其可以是天然氧化铝层或通过化学处理新的或使用的裸铝挡板形成薄的外部氧化铝层而形成的层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式