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1. 发明授权

US08845856B2 Edge ring assembly for plasma etching chambers 有权
标题翻译：用于等离子体蚀刻室的边缘环组件
公开(公告)号：US08845856B2
公开(公告)日：2014-09-30
申请号：US12957932
申请日：2010-12-01
申请人： Michael S. Kang , Michael C. Kellogg , Migùel A. Saldana , Travis R. Taylor
发明人： Michael S. Kang , Michael C. Kellogg , Migùel A. Saldana , Travis R. Taylor
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01J37/32642 , H01J37/32091
摘要： An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring.
摘要翻译：用于等离子体蚀刻室的边缘环组件包括电介质耦合环和导电边缘环。在一个实施例中，电介质耦合环具有从其内周向轴向上延伸的环形突起。电介质耦合环适于围绕等离子体蚀刻室中的衬底支撑件。导电边缘环适于围绕电介质耦合环的环形突起。支撑在基板支撑件上的基板突出到基板支撑件上并且覆盖在电介质耦合环的环形突起和导电边缘环的一部分上。在另一个实施例中，电介质耦合环具有矩形横截面。电介质耦合环和导电边缘环适于围绕等离子体蚀刻室中的衬底支撑。支撑在基板支撑件上的基板突出到基板支撑件上并且覆盖在导电边缘环的一部分上。

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