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    • 1. 发明授权
    • Conductive oxide coating process
    • 导电氧化物涂层工艺
    • US06632344B1
    • 2003-10-14
    • US09535302
    • 2000-03-24
    • Robert L. GoldbergMichael Gulla
    • Robert L. GoldbergMichael Gulla
    • C25D554
    • C25D5/54C25D5/02C25D5/56H05K3/0055H05K3/424
    • The invention is directed to a process for electroplating a non-conducting surface such as through-hole walls within a printed circuit board substrate. The process comprises formation of a conductive oxide coating over a substrate, preferably by immersion of said substrate in an aqueous oxidative desmear solution for a time sufficient to form a coating containing conductive dielectric oxidation residue and then, in the absence of a step of forming an additional conductive coating over the residue coating or removing the coating, electroplating metal onto said surface by immersion of the substrate having the coating in an electroplating solution.
    • 本发明涉及一种用于在印刷电路板衬底内电镀非导电表面(例如通孔壁)的方法。 该方法包括在衬底上形成导电氧化物涂层,优选通过将所述衬底浸入水性氧化脱粘剂溶液中足以形成含有导电介电氧化残余物的涂层的时间,然后在不存在形成 在残留物涂层上的额外的导电涂层或去除涂层,通过将具有涂层的基底浸入电镀溶液中将金属电镀到所述表面上。
    • 3. 发明授权
    • Plasma processing with metal mask integration
    • 等离子处理与金属掩模集成
    • US5213917A
    • 1993-05-25
    • US648890
    • 1991-01-31
    • Michael GullaPrasit Sricharoenchaikit
    • Michael GullaPrasit Sricharoenchaikit
    • G03F7/26G03F7/40H05K3/18
    • G03F7/265G03F7/40H05K3/185
    • This invention describes methods for altering a substrate in a fine line image pattern using a microlithographic process including formation of a metal mask over a photoresist coating to protect the photoresist coating during dry development of the same. The invention also describes a method for formation of the metal mask. Briefly stated, the process of the invention comprises the steps of coating a substrate with a photoresist coating, exposing the photoresist coating so formed to a desired pattern of actinic radiation, catalyzing the entire surface of the photoresist coating with an electroless plating catalyst, developing the photoresist layer to a depth at least sufficient to remove the undesired catalyst layer in an image pattern, forming a metal pattern on the desired (remaining) catalyst layer and dry developing the remaining photoresist coating unprotected by the metal mask.
    • 本发明描述了使用包括在光致抗蚀剂涂层上形成金属掩模的微光刻工艺来改变细线图像图案中的衬底的方法,以在其干燥显影期间保护光致抗蚀剂涂层。 本发明还描述了形成金属掩模的方法。 简要说明,本发明的方法包括以下步骤:用光致抗蚀剂涂层涂覆基材,将所形成的光致抗蚀剂涂层暴露于期望的光化辐射图形,用化学镀催化剂催化光刻胶涂层的整个表面, 光致抗蚀剂层至少足以去除图案图案中的不需要的催化剂层的深度,在期望的(剩余的)催化剂层上形成金属图案,并干燥显影未被金属掩模保护的剩余的光致抗蚀剂涂层。