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1. 发明申请

US20120223660A1 WHITE LIGHT EMITTING DEVICE 失效
标题翻译：白光发光装置
公开(公告)号：US20120223660A1
公开(公告)日：2012-09-06
申请号：US13474240
申请日：2012-05-17
申请人： Pun Jae Choi , Masayoshi Koike , Sang Yeob Song
发明人： Pun Jae Choi , Masayoshi Koike , Sang Yeob Song
IPC分类号： H05B33/14
CPC分类号： H01L33/50 , H01L25/0753 , H01L2924/0002 , H01L2924/00
摘要： A white light emitting device includes a structure for emitting white light having at least four wavelengths by using two or less LEDs, where the LEDs include a blue/green LED emitting blue and green wavelengths of light. The device also includes means for emitting red wavelength of light.
摘要翻译：白色发光器件包括通过使用两个或更少的LED发射具有至少四个波长的白光的结构，其中LED包括发射蓝色和绿色波长的光的蓝/绿LED。该装置还包括用于发射红色波长的光的装置。

2. 发明授权

US07998767B2 Method for manufacturing a facet extraction LED 有权
标题翻译：制造小面提取LED的方法
公开(公告)号：US07998767B2
公开(公告)日：2011-08-16
申请号：US12704570
申请日：2010-02-12
申请人： Tae Won Lee , Hee Seok Park , Masayoshi Koike
发明人： Tae Won Lee , Hee Seok Park , Masayoshi Koike
IPC分类号： H01L21/00
CPC分类号： H01L33/20
摘要： A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.
摘要翻译：提取光提取效率的小面提取LED及其制造方法。提供基板。发光部包括依次层叠在基板上的n型半导体层，有源层和p型半导体层。 p电极和n电极分别连接到p型半导体层和n型半导体层。 p电极和n电极形成在LED的同一侧。发光部分被构造为环。

3. 发明申请

US20090258453A1 METHOD FABRICATING NITRIDE-BASED COMPOUND LAYER, GaN SUBSTRATE AND VERTICAL STRUCTURE NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：方法制备基于氮化物的化合物层，GaN衬底和基于硝酸的垂直结构的半导体发光器件
公开(公告)号：US20090258453A1
公开(公告)日：2009-10-15
申请号：US12489819
申请日：2009-06-23
申请人： Soo Min LEE , Cheol Kyu KIM , Jaeun YOO , Sung Hwan JANG , Masayoshi KOIKE
发明人： Soo Min LEE , Cheol Kyu KIM , Jaeun YOO , Sung Hwan JANG , Masayoshi KOIKE
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L21/02002 , H01L21/02389 , H01L21/02439 , H01L21/02472 , H01L21/02483 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/0079
摘要： In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.
摘要翻译：在制造氮化物类化合物层的方法中，首先制备GaN衬底。在GaN衬底上形成具有预定图案的掩模层，以暴露GaN衬底的部分区域。然后在部分曝光的GaN衬底上形成缓冲层。缓冲层由具有10％以下与GaN的晶格失配的材料制成。此后，氮化物类化合物从缓冲层的顶表面朝向掩模层的顶表面横向生长，并且氮化物基化合物层垂直生长至预定厚度。此外，通过湿蚀刻除去掩模层和缓冲层，以将氮化物基化合物层与GaN衬底分离。

4. 发明授权

US07569461B2 Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device 有权
标题翻译：氮化物系化合物层的制造方法，GaN衬底和垂直结构氮化物系半导体发光元件
公开(公告)号：US07569461B2
公开(公告)日：2009-08-04
申请号：US11471697
申请日：2006-06-21
申请人： Soo Min Lee , Cheol Kyu Kim , Jaeun Yoo , Sung Hwan Jang , Masayoshi Koike
发明人： Soo Min Lee , Cheol Kyu Kim , Jaeun Yoo , Sung Hwan Jang , Masayoshi Koike
IPC分类号： H01L21/20
CPC分类号： H01L33/0075 , H01L21/02002 , H01L21/02389 , H01L21/02439 , H01L21/02472 , H01L21/02483 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/0079
摘要： In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.
摘要翻译：在制造氮化物类化合物层的方法中，首先制备GaN衬底。在GaN衬底上形成具有预定图案的掩模层，以暴露GaN衬底的部分区域。然后在部分曝光的GaN衬底上形成缓冲层。缓冲层由具有10％以下与GaN的晶格失配的材料制成。此后，氮化物类化合物从缓冲层的顶表面朝向掩模层的顶表面横向生长，并且氮化物基化合物层垂直生长至预定厚度。此外，通过湿蚀刻除去掩模层和缓冲层，以将氮化物基化合物层与GaN衬底分离。

5. 发明授权

US07491984B2 Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices 失效
标题翻译：制备III族氮化物化合物半导体和III族氮化物化合物半导体器件的方法
公开(公告)号：US07491984B2
公开(公告)日：2009-02-17
申请号：US10978438
申请日：2004-11-02
申请人： Masayoshi Koike , Yuta Tezen , Toshio Hiramatsu , Seiji Nagai
发明人： Masayoshi Koike , Yuta Tezen , Toshio Hiramatsu , Seiji Nagai
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02647
摘要： The present invention provides a Group III nitride compound semiconductor with suppressed generation of threading dislocations.A GaN layer 31 is subjected to etching, so as to form an island-like structure having a shape of, for example, dot, stripe, or grid, thereby providing a trench/mesa structure, and a mask 4 is formed at the bottom of the trench such that the upper surface of the mask 4 is positioned below the top surface of the GaN layer 31. A GaN layer 32 is lateral-epitaxially grown with the top surface 31a of the mesa and sidewalls 31b of the trench serving as nuclei, to thereby bury the trench, and then epitaxial growth is effected in the vertical direction. In the upper region of the GaN layer 32 formed above the mask 4 through lateral epitaxial growth, propagation of threading dislocations contained in the GaN layer 31 can be prevented.
摘要翻译：本发明提供了具有抑制的穿透位错产生的III族氮化物化合物半导体。对GaN层31进行蚀刻，以形成具有例如点状，条状或格栅形状的岛状结构，由此提供沟槽/台面结构，并且在底部形成掩模4 使得掩模4的上表面位于GaN层31的顶表面之下。GaN层32被侧壁外延生长，台面的顶表面31a和用作核的沟槽的侧壁31b ，从而埋入沟槽，然后在垂直方向进行外延生长。在通过横向外延生长形成在掩模4上方的GaN层32的上部区域中，可以防止包含在GaN层31中的穿透位错的传播。

6. 发明申请

US20070254459A1 Method of growing non-polar m-plane nitride semiconductor 有权
标题翻译：生长非极性m面氮化物半导体的方法
公开(公告)号：US20070254459A1
公开(公告)日：2007-11-01
申请号：US11790329
申请日：2007-04-25
申请人： Soo Lee , Masayoshi Koike , Sung Jang , Hyo Suh
发明人： Soo Lee , Masayoshi Koike , Sung Jang , Hyo Suh
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02447 , H01L21/02472 , H01L21/02516 , H01L21/0254 , H01L21/02609
摘要： A method of growing a non-polar m-plane nitride semiconductor. A (11-23) plane sapphire substrate is prepared, and a non-polar (10-10) nitride semiconductor is grown on the sapphire substrate. The present invention can also be applied to a method for manufacturing other m-plane hexagonal semiconductors.
摘要翻译：一种生长非极性m面氮化物半导体的方法。制备（11-23）平面蓝宝石衬底，在蓝宝石衬底上生长非极性（10-10）氮化物半导体。本发明也可以应用于制造其它m面六边形半导体的方法。

7. 发明申请

US20070141741A1 Semiconductor laminated structure and method of manufacturing nitirde semiconductor crystal substrate and nitirde semiconductor device 审中-公开
标题翻译：半导体层叠结构及其制造方法
公开(公告)号：US20070141741A1
公开(公告)日：2007-06-21
申请号：US11505406
申请日：2006-08-17
申请人： Hyo Suh , Masayoshi Koike , Sung Jang , Soo Lee , Jong Yang , Jin Hong
发明人： Hyo Suh , Masayoshi Koike , Sung Jang , Soo Lee , Jong Yang , Jin Hong
IPC分类号： C30B21/04 , H01L21/00 , H01L21/336
CPC分类号： C30B29/403 , C30B25/04 , H01L21/02389 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L21/02664 , H01L33/007 , H01L33/0079
摘要： In a semiconductor laminated structure, a base substrate has a nitride semiconductor crystal plane in an upper surface thereof. A growth blocking film encloses a flow-through pattern which is extended horizontally on the base substrate at a predetermined interval. A nitride semiconductor crystal layer is formed on the base substrate to contact the upper surface thereof between regions of the flow-through pattern and covers the grow blocking film. The semiconductor laminated structure is employed to obtain a nitride semiconductor crystal layer, nitride semiconductor crystal substrate and nitride semiconductor device exhibiting fewer defects and high quality.
摘要翻译：在半导体层叠结构中，基板在其上表面具有氮化物半导体晶体面。生长阻挡膜包围以预定间隔在基底基板上水平延伸的流通图案。氮化物半导体晶体层形成在基底基板上，以与流通图案的区域之间的上表面接触，并覆盖生长阻挡膜。采用半导体层叠结构来获得氮化物半导体晶体层，氮化物半导体晶体基板和具有较少缺陷和高质量的氮化物半导体器件。

8. 发明授权

US07163876B2 Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device 有权
标题翻译： III族氮化物化合物半导体的制造方法以及III族氮化物化合物半导体装置
公开(公告)号：US07163876B2
公开(公告)日：2007-01-16
申请号：US10473075
申请日：2002-03-12
申请人： Seiji Nagai , Masayoshi Koike , Kazuyoshi Tomita
发明人： Seiji Nagai , Masayoshi Koike , Kazuyoshi Tomita
IPC分类号： H01L21/36
CPC分类号： H01L21/02647 , H01L21/0237 , H01L21/02381 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L33/007
摘要： In the epitaxial growth process in which each growth region D is zoned by a mask 2 formed in grid pattern, because a consumption region C of the Group III nitride compound semiconductor is formed in the central portion of each band of the mask 2 between each adjacent edge portion of the growth region D, Group III or Group V raw material is never unnecessarily supplied to the edge portion of the growth region D. As a result, difference of Group III or Group V rare material supply amount to the edge portion and central portion of the device formation region D is suppressed and the edge portion of the device region may not be convexity.
摘要翻译：在其中每个生长区域D由栅格图案形成的掩模2划分的外延生长过程中，因为在相邻的每个相邻的掩模2的每个带的中心部分中形成III族氮化物化合物半导体的消耗区域C 生长区域D，组III或组V原料的边缘部分不会不必要地被供给到生长区域D的边缘部分。结果，III族或V族稀有材料供应量与边缘部分和中心器件形成区域D的部分被抑制，器件区域的边缘部分可能不是凸的。

9. 发明授权

US06962828B1 Methods for manufacturing a light-emitting device 失效
标题翻译：制造发光装置的方法
公开(公告)号：US06962828B1
公开(公告)日：2005-11-08
申请号：US09711908
申请日：2000-11-15
申请人： Norikatsu Koide , Masayoshi Koike , Shiro Yamasaki , Isamu Akasaki , Hiroshi Amano
发明人： Norikatsu Koide , Masayoshi Koike , Shiro Yamasaki , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L21/86 , H01L33/32 , H01S5/00 , H01S5/02 , H01S5/323 , H01L21/00
CPC分类号： H01L33/32 , H01S5/0213 , H01S5/32341
摘要： A novel light-emitting device includes a saphire substrate with a light-emitting layer comprising InXGa1−XN, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength λ of emitted light.
摘要翻译：一种新颖的发光器件包括具有包含In x N Ga 1-X N的发光层的锡箔衬底，其中铟摩尔分数X的临界值为通过铟摩尔分数X和发射光的波长λ之间的新衍生关系来确定。

10. 发明授权

US06860943B2 Method for producing group III nitride compound semiconductor 失效
标题翻译： III族氮化物半导体的制造方法
公开(公告)号：US06860943B2
公开(公告)日：2005-03-01
申请号：US10268998
申请日：2002-10-11
申请人： Masayoshi Koike , Hiroshi Watanabe
发明人： Masayoshi Koike , Hiroshi Watanabe
IPC分类号： C30B29/38 , C30B25/02 , H01L21/20 , H01L21/205 , H01L29/201 , H01S5/323 , H01S5/343 , C30B25/04 , C30B25/14
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/02658 , H01L33/007
摘要： Disclosed is a method for producing a Group III nitride compound semiconductor including a pit formation step in which a portion of an uppermost layer of a first Group III nitride compound semiconductor layer containing one or more sub-layers, the portion containing lattice defects, is subjected to treatment by use of a solution or vapor which corrodes the portion more easily than it corrodes a portion of the uppermost layer containing no lattice defects, the first Group III nitride compound semiconductor layer not being accompanied by a substrate therefor as a result of removal therefrom, or being accompanied by a substrate such that the semiconductor layer is formed with or without intervention of a buffer layer provided on the substrate; and a lateral growth step of growing a second Group III nitride compound semiconductor layer through vertical and lateral epitaxial overgrowth around nuclei as seeds for crystal growth which are on flat portions of the uppermost layer of the first Group III nitride compound semiconductor layer, but not on portions of the uppermost layer that define pits formed through the pit formation step.
摘要翻译：公开了一种制造含有凹坑形成步骤的III族氮化物化合物半导体的方法，其中包含一个或多个子层的第一III族氮化物化合物半导体层的最上层部分，包含晶格缺陷的部分被施加通过使用比不腐蚀不含有晶格缺陷的最上层的一部分腐蚀该部分的溶液或蒸汽来进行处理，因此第一III族氮化物化合物半导体层不伴随其底物而被附着于其上或伴随着衬底，使得半导体层形成有或没有介于设置在衬底上的缓冲层; 以及横向生长步骤，其通过垂直和横向外延过生长生长第二III族氮化物化合物半导体层，所述第三III族氮化物化合物半导体层作为晶体生长的晶种，其在第一III族氮化物半导体层的最上层的平坦部分上但不在限定通过凹坑形成步骤形成的凹坑的最上层的部分。

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