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1. 发明授权

US08277563B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US08277563B2
公开(公告)日：2012-10-02
申请号：US13019131
申请日：2011-02-01
申请人： Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
发明人： Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
IPC分类号： B08B7/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method which includes (i) feeding a transferring gas which decreases a pressure difference between a processing chamber and a transfer chamber in order to prevent particles from adhering a processing sample, to be processed, passed to the processing chamber, before transferring the sample into the processing chamber; (ii) transferring the sample into the processing chamber while continuing to feed the transferring gas to the processing chamber; (iii) generating a plasma from the transferring gas in the processing chamber while continuing to feed the transferring gas to the processing chamber after the step of transferring the sample; and (iv) changing a gas supplied to the processing chamber from the transferring gas used in the step of generating the plasma to a processing gas for subjecting the processing sample, different from a cleaning sample, to plasma processing.
摘要翻译：本发明提供一种等离子体处理方法，其包括（i）供给转移气体，该转移气体降低处理室和转移室之间的压力差，以防止颗粒附着在待处理样品上，被处理通过到处理室，在将样品转移到处理室之前; （ii）将所述样品转移到所述处理室中，同时继续将所述转移气体供给到所述处理室; （iii）在所述处理室中从所述转移气体产生等离子体，同时在转移所述样品的步骤之后继续将所述转移气体供给到所述处理室; 以及（iv）将从产生等离子体的步骤中使用的转移气体中提供给处理室的气体改变为用于对不同于清洁样品的处理样品进行等离子体处理的处理气体。

2. 发明授权

US08262801B2 Vacuum processing method 有权
标题翻译：真空加工方法
公开(公告)号：US08262801B2
公开(公告)日：2012-09-11
申请号：US12854435
申请日：2010-08-11
申请人： Ken Kitaoka , Masamichi Sakaguchi , Kazue Takahasi
发明人： Ken Kitaoka , Masamichi Sakaguchi , Kazue Takahasi
IPC分类号： B08B6/00
CPC分类号： H01L21/67028 , C23C16/4407 , C23C16/45521 , C23C16/4586 , H01J37/32706 , H01J37/32862 , H01L21/6831
摘要： A vacuum processing method using an apparatus including a processing chamber disposed in a vacuum reactor and having plasma formed thereon, a sample stage having a sample placed on the upper plane thereof, and a gas introducing mechanism, wherein the sample stage includes a gas supply port for introducing thermal conductance gas between the sample stage and the sample to be processed. The method includes placing a dummy sample on the sample stage, introducing dust removal gas between the sample stage and the dummy sample, and removing particles attached to the sample stage via the flow of dust removal gas.
摘要翻译：一种真空处理方法，其特征在于，使用包括设置在真空反应器中并具有形成有等离子体的处理室的装置，具有放置在其上面的样品的样品台和气体导入机构，所述样品台包括气体供给口用于在样品台和待处理样品之间引入导热气体。该方法包括将样品台放置在样品台上，在样品台和虚拟样品之间引入除尘气体，并通过除尘气体除去附着在样品台上的颗粒。

3. 发明申请

US20120125890A1 PLASMA PROCESSING METHOD 失效
标题翻译：等离子体处理方法
公开(公告)号：US20120125890A1
公开(公告)日：2012-05-24
申请号：US13011070
申请日：2011-01-21
申请人： Takeshi OHMORI , Yasuhiro NISHIMORI , Hiroaki ISHIMURA , Hitoshi KOBAYASHI , Masamichi SAKAGUCHI
发明人： Takeshi OHMORI , Yasuhiro NISHIMORI , Hiroaki ISHIMURA , Hitoshi KOBAYASHI , Masamichi SAKAGUCHI
IPC分类号： C23F1/00 , B08B5/00
CPC分类号： H01J37/32816 , B08B7/0035 , H01J37/32834
摘要： In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.
摘要翻译：在本发明中，提供了一种等离子体处理方法，其减少或消除由处理室的内壁和处理室内的部件的氧化钇的表面上的质量变化层引起的污染物质的排放。等离子体处理方法包括在处理室内设置样品并蚀刻样品的蚀刻步骤，通过使用等离子体去除沉积产物的沉积产物去除步骤，沉积产物通过蚀刻步骤，使用含有氟或氯的气体产生等离子体，以及在沉积物除去步骤之后将稀释气体等离子体暴露于处理室内部的步骤。

4. 发明申请

US20110120495A1 PLASMA PROCESSING METHOD 有权
标题翻译：等离子体处理方法
公开(公告)号：US20110120495A1
公开(公告)日：2011-05-26
申请号：US13019131
申请日：2011-02-01
申请人： Masunori ISHIHARA , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
发明人： Masunori ISHIHARA , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
IPC分类号： B08B7/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
摘要翻译：本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理房间。本发明提供了一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及用于供应气体的供应系统，所述气体与供应的转移气体相同到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。

5. 发明授权

US07909933B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07909933B2
公开(公告)日：2011-03-22
申请号：US12437941
申请日：2009-05-08
申请人： Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
发明人： Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
IPC分类号： B08B7/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
摘要翻译：本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理房间。本发明提供了一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及供应与供给的传送气体相同的气体的供应系统到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。

6. 发明申请

US20070218696A1 Dry etching method 审中-公开
标题翻译：干蚀刻法
公开(公告)号：US20070218696A1
公开(公告)日：2007-09-20
申请号：US11509736
申请日：2006-08-25
申请人： Kenichi Kuwabara , Satoshi Une , Tomoyoshi Ichimaru , Masamichi Sakaguchi , Naoki Yasui
发明人： Kenichi Kuwabara , Satoshi Une , Tomoyoshi Ichimaru , Masamichi Sakaguchi , Naoki Yasui
IPC分类号： H01L21/465
CPC分类号： H01L21/32137
摘要： The invention provides a method for processing vertical gate patterns while reducing the Si substrate recess dimension caused by overetching. The invention provides a dry etching method for processing a gate pattern by performing a main etching process (b) and then an overetching process on a gate pattern layer 12 of a semiconductor substrate 10, wherein the overetching process (c) is performed using a composite gas having added to an etching gas containing HBr gas a gas represented by a general formula of CxHy or at least one gas selected from CO and CO2 gases.
摘要翻译：本发明提供了一种在减少由过蚀刻引起的Si衬底凹陷尺寸的同时处理垂直栅极图案的方法。本发明提供一种通过在半导体衬底10的栅极图案层12上执行主蚀刻工艺（b）然后进行过蚀刻处理来进行栅极图案的干式蚀刻方法，其中过蚀刻工艺（c）使用复合材料已经添加到含有HBr气体的蚀刻气体的气体是由通式C x H y表示的气体或选自CO和CO 2气体的至少一种气体。

7. 发明授权

US07098138B2 Plasma processing method for working the surface of semiconductor devices 失效
公开(公告)号：US07098138B2
公开(公告)日：2006-08-29
申请号：US10404647
申请日：2003-04-02
申请人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
发明人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01J37/32082 , H01J37/32477 , H01J37/32697 , H01J2237/022 , H01J2237/3341 , H01L21/31116 , H01L21/67069 , H01L29/6656
摘要： A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

8. 发明申请

US20060048892A1 Plasma processing method for working the surface of semiconductor devices 审中-公开
公开(公告)号：US20060048892A1
公开(公告)日：2006-03-09
申请号：US11253698
申请日：2005-10-20
申请人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
发明人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , H01J37/32477 , H01J37/32697 , H01J2237/022 , H01J2237/3341 , H01L21/31116 , H01L21/67069 , H01L29/6656
摘要： A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

9. 发明授权

US06709984B2 Method for manufacturing semiconductor device 失效
公开(公告)号：US06709984B2
公开(公告)日：2004-03-23
申请号：US10216720
申请日：2002-08-13
申请人： Go Saito , Hiroaki Ishimura , Yutaka Kudoh , Masamichi Sakaguchi , Kazuo Takata
发明人： Go Saito , Hiroaki Ishimura , Yutaka Kudoh , Masamichi Sakaguchi , Kazuo Takata
IPC分类号： H01L21311
CPC分类号： H01L21/3086 , H01L21/3065 , H01L21/3081 , H01L21/3085 , H01L21/76232
摘要： A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.

10. 发明授权

US08143175B2 Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US08143175B2
公开(公告)日：2012-03-27
申请号：US12435787
申请日：2009-05-05
申请人： Satoshi Une , Masamichi Sakaguchi , Kenichi Kuwabara , Tomoyoshi Ichimaru
发明人： Satoshi Une , Masamichi Sakaguchi , Kenichi Kuwabara , Tomoyoshi Ichimaru
IPC分类号： H01L21/31
CPC分类号： H01L21/32139 , H01L21/0338 , H01L21/28123 , H01L21/31116 , H01L21/32137
摘要： The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein the wiring process is performed without causing disconnection or deflection of the wiring. The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein during a step for etching a material 12 to be etched using a mask pattern composed of a photoresist 15 and inorganic films 14 and 13 made of SiN, SiON, SiO and the like formed on the material 12 to be etched, a mixed gas formed of a halogen-based gas such as chlorine-containing gas or bromine-containing gas and at least one fluorine-containing gas selected from a group of fluorine-containing gases composed of CF4, CHF3, SF6 and NF3 is used to reduce the mask pattern and the processing dimension of the material to be etched substantially equally during processing of the material 12 to be etched.
摘要翻译：本发明提供了一种用于使用等离子体蚀刻装置在半导体衬底上进行布线处理的干蚀刻方法，其中进行布线处理而不引起布线的断开或偏转。本发明提供一种使用等离子体蚀刻装置对半导体衬底进行布线处理的干式蚀刻方法，其中在使用由光致抗蚀剂15和无机膜14和13构成的掩模图案来蚀刻要蚀刻的材料12的步骤期间，在被蚀刻材料12上形成的SiN，SiON，SiO等，由含氯气体或含溴气体的卤素系气体形成的混合气体和至少一种选自使用由CF4，CHF3，SF6和NF3组成的含氟气体组，在待蚀刻材料12的加工期间，基本上相同地减少掩模图案和待蚀刻材料的加工尺寸。

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