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1. 发明授权

US06709984B2 Method for manufacturing semiconductor device 失效
公开(公告)号：US06709984B2
公开(公告)日：2004-03-23
申请号：US10216720
申请日：2002-08-13
申请人： Go Saito , Hiroaki Ishimura , Yutaka Kudoh , Masamichi Sakaguchi , Kazuo Takata
发明人： Go Saito , Hiroaki Ishimura , Yutaka Kudoh , Masamichi Sakaguchi , Kazuo Takata
IPC分类号： H01L21311
CPC分类号： H01L21/3086 , H01L21/3065 , H01L21/3081 , H01L21/3085 , H01L21/76232
摘要： A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.

2. 发明授权

US07098138B2 Plasma processing method for working the surface of semiconductor devices 失效
公开(公告)号：US07098138B2
公开(公告)日：2006-08-29
申请号：US10404647
申请日：2003-04-02
申请人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
发明人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01J37/32082 , H01J37/32477 , H01J37/32697 , H01J2237/022 , H01J2237/3341 , H01L21/31116 , H01L21/67069 , H01L29/6656
摘要： A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

3. 发明申请

US20060048892A1 Plasma processing method for working the surface of semiconductor devices 审中-公开
公开(公告)号：US20060048892A1
公开(公告)日：2006-03-09
申请号：US11253698
申请日：2005-10-20
申请人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
发明人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , H01J37/32477 , H01J37/32697 , H01J2237/022 , H01J2237/3341 , H01L21/31116 , H01L21/67069 , H01L29/6656
摘要： A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

4. 发明授权

US06617255B2 Plasma processing method for working the surface of semiconductor devices 失效
标题翻译：用于加工半导体器件表面的等离子体处理方法
公开(公告)号：US06617255B2
公开(公告)日：2003-09-09
申请号：US09799485
申请日：2001-03-07
申请人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
发明人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
IPC分类号： H01L21302
CPC分类号： H01J37/32082 , H01J37/32477 , H01J37/32697 , H01J2237/022 , H01J2237/3341 , H01L21/31116 , H01L21/67069 , H01L29/6656
摘要： A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.
摘要翻译：提供了一种等离子体处理方法，其处理具有氮化硅层的样品，其具有各向异性的高精度尺寸和对作为底层的氧化硅层的优异选择性。在等离子体蚀刻处理室中将不含氟的氯气与铝的混合气氛转化为等离子体，并且通过使用等离子体蚀刻具有氮化硅层的样品。

5. 发明授权

US08486291B2 Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US08486291B2
公开(公告)日：2013-07-16
申请号：US13011070
申请日：2011-01-21
申请人： Takeshi Ohmori , Yasuhiro Nishimori , Hiroaki Ishimura , Hitoshi Kobayashi , Masamichi Sakaguchi
发明人： Takeshi Ohmori , Yasuhiro Nishimori , Hiroaki Ishimura , Hitoshi Kobayashi , Masamichi Sakaguchi
IPC分类号： C03C15/00
CPC分类号： H01J37/32816 , B08B7/0035 , H01J37/32834
摘要： In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.
摘要翻译：在本发明中，提供了一种等离子体处理方法，其减少或消除由处理室的内壁和处理室内的部件的氧化钇的表面上的质量变化层引起的污染物质的排放。等离子体处理方法包括在处理室内设置样品并蚀刻样品的蚀刻步骤，通过使用等离子体去除沉积产物的沉积产物去除步骤，沉积产物通过蚀刻步骤，使用含有氟或氯的气体产生等离子体，以及在沉积物除去步骤之后将稀释气体等离子体暴露于处理室内部的步骤。

6. 发明授权

US06620737B2 Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US06620737B2
公开(公告)日：2003-09-16
申请号：US09946509
申请日：2001-09-06
申请人： Go Saito , Masamichi Sakaguchi , Hitoshi Kobayashi , Motohiko Yoshigai , Satoshi Tani
发明人： Go Saito , Masamichi Sakaguchi , Hitoshi Kobayashi , Motohiko Yoshigai , Satoshi Tani
IPC分类号： H01L21302
CPC分类号： H01J37/32431 , H01J2237/3347 , H01L21/3065
摘要： The temperature of the specimen holder 6 in the vacuum container 1 is lowered with the thermal control unit 11 to adjust the temperature of the specimen 7 composed of a silicon substrate to a low temperature of 0° C. or lower. Then, trenches are formed in the specimen 7 by plasma etching using an etching gas comprising SF6 as the main constituent and optionally O2 as an additive. Thus, the etching rate and the yield can be increased in the trench formation in the silicon semiconductor substrate.
摘要翻译：真空容器1中的试样保持器6的温度随着热控制单元11而降低，将由硅基板构成的试样7的温度调节至0℃以下的低温。然后，通过使用包含SF 6作为主要成分和任选的O 2作为添加剂的蚀刻气体的等离子体蚀刻在样品7中形成沟槽。因此，可以在硅半导体衬底中的沟槽形成中提高蚀刻速率和产率。

7. 发明授权

US08143175B2 Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US08143175B2
公开(公告)日：2012-03-27
申请号：US12435787
申请日：2009-05-05
申请人： Satoshi Une , Masamichi Sakaguchi , Kenichi Kuwabara , Tomoyoshi Ichimaru
发明人： Satoshi Une , Masamichi Sakaguchi , Kenichi Kuwabara , Tomoyoshi Ichimaru
IPC分类号： H01L21/31
CPC分类号： H01L21/32139 , H01L21/0338 , H01L21/28123 , H01L21/31116 , H01L21/32137
摘要： The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein the wiring process is performed without causing disconnection or deflection of the wiring. The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein during a step for etching a material 12 to be etched using a mask pattern composed of a photoresist 15 and inorganic films 14 and 13 made of SiN, SiON, SiO and the like formed on the material 12 to be etched, a mixed gas formed of a halogen-based gas such as chlorine-containing gas or bromine-containing gas and at least one fluorine-containing gas selected from a group of fluorine-containing gases composed of CF4, CHF3, SF6 and NF3 is used to reduce the mask pattern and the processing dimension of the material to be etched substantially equally during processing of the material 12 to be etched.
摘要翻译：本发明提供了一种用于使用等离子体蚀刻装置在半导体衬底上进行布线处理的干蚀刻方法，其中进行布线处理而不引起布线的断开或偏转。本发明提供一种使用等离子体蚀刻装置对半导体衬底进行布线处理的干式蚀刻方法，其中在使用由光致抗蚀剂15和无机膜14和13构成的掩模图案来蚀刻要蚀刻的材料12的步骤期间，在被蚀刻材料12上形成的SiN，SiON，SiO等，由含氯气体或含溴气体的卤素系气体形成的混合气体和至少一种选自使用由CF4，CHF3，SF6和NF3组成的含氟气体组，在待蚀刻材料12的加工期间，基本上相同地减少掩模图案和待蚀刻材料的加工尺寸。

8. 发明授权

US06919274B2 LSI device etching method and apparatus thereof 失效
公开(公告)号：US06919274B2
公开(公告)日：2005-07-19
申请号：US10780670
申请日：2004-02-19
申请人： Hideyuki Kazumi , Tsuyoshi Yoshida , Eiji Ikegami , Kouichi Nakaune , Masamichi Sakaguchi , Yasuyuki Miyamoto , Akihiro Sano
发明人： Hideyuki Kazumi , Tsuyoshi Yoshida , Eiji Ikegami , Kouichi Nakaune , Masamichi Sakaguchi , Yasuyuki Miyamoto , Akihiro Sano
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/44
CPC分类号： H01L21/31116
摘要： An apparatus for performing a plasma-etching of a LSI device including a Cu interconnection, a low-k film, and a diffusion prevention film has a treatment chamber, into which an etching gas is introduced, and a support table which is equipped with electrodes and on which said LSI device is placed. In this apparatus, the etching gasses are turned into plasma by supplying radio frequency power to electrodes provided within the treatment chamber, so that the LSI device is etched with ions of the plasma. In this apparatus, a sulfur-containing gas and a fluorine-containing gas are mixed to the etching gasses, so that the diffusion prevention film is selectively etched against the low-k film.

9. 发明申请

US20050026431A1 LSI device etching method and apparatus thereof 失效
标题翻译： LSI器件蚀刻方法及其装置
公开(公告)号：US20050026431A1
公开(公告)日：2005-02-03
申请号：US10780670
申请日：2004-02-19
申请人： Hideyuki Kazumi , Tsuyoshi Yoshida , Eiji Ikegami , Kouichi Nakaune , Masamichi Sakaguchi , Yasuyuki Miyamoto , Akihiro Sano
发明人： Hideyuki Kazumi , Tsuyoshi Yoshida , Eiji Ikegami , Kouichi Nakaune , Masamichi Sakaguchi , Yasuyuki Miyamoto , Akihiro Sano
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/44
CPC分类号： H01L21/31116
摘要： An apparatus for performing a plasma-etching of a LSI device including a Cu interconnection, a low-k film, and a diffusion prevention film has a treatment chamber, into which an etching gas is introduced, and a support table which is equipped with electrodes and on which said LSI device is placed. In this apparatus, the etching gasses are turned into plasma by supplying radio frequency power to electrodes provided within the treatment chamber, so that the LSI device is etched with ions of the plasma. In this apparatus, a sulfur-containing gas and a fluorine-containing gas are mixed to the etching gasses, so that the diffusion prevention film is selectively etched against the low-k film.
摘要翻译：用于进行包括Cu互连，低k膜和防扩散膜的LSI器件的等离子体蚀刻的设备具有其中引入蚀刻气体的处理室和配备有电极的支撑台并在其上放置所述LSI器件。在该装置中，通过向设置在处理室内的电极提供射频功率使蚀刻气体变成等离子体，从而利用等离子体的离子蚀刻LSI器件。在该装置中，将含硫气体和含氟气体混合到蚀刻气体中，使得防扩散膜针对低k膜选择性地蚀刻。

10. 发明授权

US07913646B2 Vacuum processing apparatus and vacuum processing method 有权
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US07913646B2
公开(公告)日：2011-03-29
申请号：US12199820
申请日：2008-08-28
申请人： Ken Kitaoka , Masamichi Sakaguchi , Kazue Takahasi
发明人： Ken Kitaoka , Masamichi Sakaguchi , Kazue Takahasi
IPC分类号： B05C11/06 , B05C13/00
CPC分类号： H01L21/67028 , C23C16/4407 , C23C16/45521 , C23C16/4586 , H01J37/32706 , H01J37/32862 , H01L21/6831
摘要： The invention provides a vacuum processing apparatus having a function for removing particles on the surface of the sample stage in order to improve the yield of the sample being processed. The vacuum processing apparatus comprises a processing chamber 104 disposed in a vacuum reactor and having plasma formed in the interior thereof, a sample stage 113 placed below the processing chamber 104 and having a sample 102 to be processed placed on the upper plane thereof for processing, and a gas introducing mechanism placed at an upper portion of the processing chamber 104 and having introduction holes for introducing processing gas into the processing chamber, wherein the sample stage 113 comprises grooves 117 and a gas supply port 119 for introducing thermal conductance gas 118 between the sample stage and the sample 102 to be processed, and a mechanism for introducing dust removal gas 120 through the gas supply port 119 between the sample stage 113 and the sample 102 to be processed or a dummy sample 202 having substantially the same shape as the sample to be processed placed on the sample stage 113 within the vacuum reactor, by which particles 201 attached to the sample stage 113 are removed via hydrodynamic force by the dust removal gas 120.
摘要翻译：本发明提供一种真空处理装置，其具有去除样品台表面上的颗粒的功能，以便提高被处理样品的产量。真空处理装置包括设置在真空反应器中并具有在其内部形成的等离子体的处理室104，放置在处理室104下方的样品台113，并且具有放置在其上平面上的待处理样品102用于处理，以及放置在处理室104的上部并具有用于将处理气体引入处理室的引入孔的气体引入机构，其中样品台113包括槽117和用于将导热气体118引入样品台和待处理样品102，以及用于通过样品台113和待处理样品102之间的气体供给口119引入除尘气体120的机构或具有与样品基本相同形状的虚拟样品202 待处理物放置在真空反应器内的样品台113上，通过该真空反应器中附着于样品台的颗粒201 ge 113通过除尘气体120的流体动力除去。

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