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1. 发明授权

US09153464B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US09153464B2
公开(公告)日：2015-10-06
申请号：US13483703
申请日：2012-05-30
申请人： Byung Chul Kang , Byung Man Kang , Donghyuk Jang , Seong-soo Kim
发明人： Byung Chul Kang , Byung Man Kang , Donghyuk Jang , Seong-soo Kim
IPC分类号： H01L21/67 , H01L21/677
CPC分类号： H01L21/67109 , H01L21/67173 , H01L21/67178 , H01L21/67742 , H01L21/67769
摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes an index part including a port on which a container containing a substrate is placed and an index robot, a processing part for processing the substrate, and a buffer unit disposed between the processing part and the index part to allow the substrate transferred between the processing part and the index part to be temporarily stayed therein. The processing part includes a glue removal processing module, a substrate cooling processing module, a heat processing module, and a functional water processing module which are disposed along a transfer passage for transferring the substrate.
摘要翻译：提供了一种基板处理装置。基板处理装置包括索引部分，其包括其上放置有容纳基板的容器的端口和索引机器人，用于处理基板的处理部分和设置在处理部分和索引部分之间的缓冲单元，以允许基板在处理部分和索引部分之间转移以暂时停留在其中。处理部分包括沿着用于转移基板的传送通道设置的胶去除处理模块，基板冷却处理模块，热处理模块和功能水处理模块。

2. 发明授权

US07927897B2 Photoresist composition and method of manufacturing array substrate using the same 有权
标题翻译：光刻胶组合物及其制造方法
公开(公告)号：US07927897B2
公开(公告)日：2011-04-19
申请号：US12327215
申请日：2008-12-03
申请人： Hi-Kuk Lee , Sang-Hyun Yun , Min-Soo Lee , Deok-Man Kang , Sae-Tae Oh , Jae-Young Choi
发明人： Hi-Kuk Lee , Sang-Hyun Yun , Min-Soo Lee , Deok-Man Kang , Sae-Tae Oh , Jae-Young Choi
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , G03F7/0233 , H01L27/1214
摘要： A photoresist composition includes a binder resin, a photo acid generator, an acryl resin having four different types of monomers, and a solvent.
摘要翻译：光致抗蚀剂组合物包括粘合剂树脂，光酸产生剂，具有四种不同类型的单体的丙烯酸树脂和溶剂。

3. 发明授权

US07172996B2 Cleaning agent composition for a positive or a negative photoresist 有权
标题翻译：用于正性或负性光致抗蚀剂的清洁剂组合物
公开(公告)号：US07172996B2
公开(公告)日：2007-02-06
申请号：US10500752
申请日：2003-01-09
申请人： Sae-Tae Oh , Doek-Man Kang , Kyung-Soo Choi
发明人： Sae-Tae Oh , Doek-Man Kang , Kyung-Soo Choi
IPC分类号： C11D7/50
CPC分类号： C11D7/264 , C11D3/3707 , C11D7/263 , C11D7/3263 , C11D7/3281 , C11D11/0047 , G03F7/168
摘要： The present invention relates to a composition for cleaning a photoresist and is to provide a cleaning composition wherein the residue of the photoresist does not remain on the boundary surface between the cleaned area and the not-cleaned area after a negative photoresist containing pigment is cleaned, soft-baked, exposed and developed. The present invention provides a composition for cleaning a positive or negative photoresist which comprises (a) from 0.1 to 20 wt. % of and alkyl oxide polymer with a molecular weight of from 50 to 2000 and (b) from 80 to 99.9 wt. % of an organic solvent comprising: (b−1) from 1 to 20 parts by weight of dipropylene glycol methyl ether (DPGME), from 10 to 50 parts by weight of N-methyl pyrolidone (NMP) and from 50 to 90 parts by weight of methyl isobutyl ketone (MIBK), or (b−2) from 10 to 90 parts by weight of dimethyl formaldehyde (DMF) or dimethylacetamide (DMAc) and from 10 to 50 parts by weight of n-butyl acetate.
摘要翻译：本发明涉及一种用于清洁光致抗蚀剂的组合物，并且提供一种清洁组合物，其中在清洁含有负性光致抗蚀剂的颜料之后，光致抗蚀剂的残留物不残留在清洁区域和未清洁区域之间的边界表面上，软烤，暴露和发达。本发明提供一种用于清洗正性或负性光致抗蚀剂的组合物，其包含（a）0.1-20wt。％和分子量为50至2000的烷基氧化物聚合物和（b）80至99.9重量％％的有机溶剂含有：（b-1）1〜20重量份二丙二醇甲基醚（DPGME），10〜50重量份N-甲基吡咯烷酮（NMP）和50〜90重量份甲基异丁基酮（MIBK）的重量，或（b-2）10至90重量份的二甲基甲醛（DMF）或二甲基乙酰胺（DMAc）和10至50重量份的乙酸正丁酯。

4. 发明授权

US09349626B2 Buffer units, substrate processing apparatuses, and substrate processing methods 有权
标题翻译：缓冲单元，基板处理装置和基板处理方法
公开(公告)号：US09349626B2
公开(公告)日：2016-05-24
申请号：US13483823
申请日：2012-05-30
申请人： Kihoon Choi , Byung Man Kang , Byung Chul Kang , Donghyuk Jang
发明人： Kihoon Choi , Byung Man Kang , Byung Chul Kang , Donghyuk Jang
IPC分类号： H01L21/677 , H01L21/67
CPC分类号： H01L21/67769 , H01L21/67173 , H01L21/67178
摘要： Provided is a buffer unit, which includes a frame including a base plate, a first vertical plate, and a second vertical plate, wherein the first and second vertical plates are spaced apart from each other on the base plate, a first buffer on which a photomask is placed, the first buffer being allowed to be reversed between the first and second vertical plates; and a plurality of driving parts disposed at outsides of the first and second vertical plates, and driving the first buffer to grip and reverse the photomask placed on the first buffer.
摘要翻译：提供了一种缓冲单元，其包括：框架，包括基板，第一垂直板和第二垂直板，其中第一和第二垂直板在基板上彼此间隔开;第一缓冲器，其上放置光掩模，允许第一缓冲器在第一和第二垂直板之间反转; 以及设置在所述第一和第二垂直板的外侧的多个驱动部，并且驱动所述第一缓冲器以夹持和反转放置在所述第一缓冲器上的光掩模。

5. 发明授权

US09136363B2 Compound tunneling field effect transistor integrated on silicon substrate and method for fabricating the same 有权
标题翻译：集成在硅衬底上的复合隧道场效应晶体管及其制造方法
公开(公告)号：US09136363B2
公开(公告)日：2015-09-15
申请号：US14357685
申请日：2011-12-30
申请人： Byung-Gook Park , Seongjae Cho , In Man Kang
发明人： Byung-Gook Park , Seongjae Cho , In Man Kang
IPC分类号： H01L29/06 , H01L29/775 , H01L29/66 , H01L29/739 , H01L29/267 , H01L29/423
CPC分类号： H01L29/775 , H01L29/0657 , H01L29/267 , H01L29/42312 , H01L29/66356 , H01L29/66439 , H01L29/7391
摘要： Compound tunneling field effect transistors integrated on a silicon substrate are provided with increased tunneling efficiency and an abrupt band slope by forming a source region with a material having a bandgap at least 0.4 electron volts (eV) narrower than that of silicon to increase a driving current (ON current) by forming a channel region with a material having almost no difference in lattice constant from a source region and having a high electron mobility at least 5 times higher than silicon. ON/OFF current ratio simultaneously is increased by forming a drain region with a material having a bandgap at least as wide as a channel region material to restrain OFF current. Tunneling field effect transistors having various threshold voltages according to circuit designs are formed easily by adding a specific material with an electron affinity less than a source region material when forming a channel region.
摘要翻译：集成在硅衬底上的复合隧道场效应晶体管具有增加的隧穿效率和突变带斜率，通过形成具有比硅的带隙更小的至少0.4电子伏（eV）的带隙的材料的源极区，以增加驱动电流（导通电流）通过形成具有与源极区域的晶格常数几乎没有差异的材料的沟道区域，并且具有比硅高至少5倍的高电子迁移率。通过用具有至少与沟道区域材料一样宽的带隙的材料形成漏极区域来同时增加ON / OFF电流比，以限制关断电流。通过在形成沟道区域时，通过添加小于源区材料的电子亲和力的特定材料，容易地形成具有根据电路设计的各种阈值电压的隧穿场效应晶体管。

6. 发明授权

US08104490B2 Substrate treating apparatus and method of manufacturing the same 有权
标题翻译：基板处理装置及其制造方法
公开(公告)号：US08104490B2
公开(公告)日：2012-01-31
申请号：US12288831
申请日：2008-10-23
申请人： Sung-Ho Jang , Byung-Man Kang
发明人： Sung-Ho Jang , Byung-Man Kang
IPC分类号： B08B3/02
CPC分类号： H01L21/67207 , H01L21/67161 , H01L21/67184 , H01L21/6719 , H01L21/67196 , Y10S134/902 , Y10T29/49826
摘要： Provided are a substrate treating apparatus and a method of manufacturing the substrate treating apparatus. Processing units of a process equipment are modularized, and the modularized processing units are detachably disposed in a main frame. According to this characteristic, work time and work effort required for manufacturing the process equipment can be reduced. In addition, maintenance/repair of each of the processing units can be further easily performed.
摘要翻译：提供了一种基板处理装置及其制造方法。处理设备的处理单元被模块化，并且模块化处理单元可拆卸地设置在主框架中。根据该特征，可以减少制造加工设备所需的工作时间和工作量。此外，可以进一步容易地执行每个处理单元的维护/修理。

7. 发明申请

US20110287360A1 PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE SAME 有权
标题翻译：光电组合物及其使用形成图案的方法
公开(公告)号：US20110287360A1
公开(公告)日：2011-11-24
申请号：US13037212
申请日：2011-02-28
申请人： Hi-Kuk LEE , Sang-Hyun YUN , Cha-Dong KIM , Jung-In PARK , Deok-Man KANG , Youn-Suk KIM , Sae-Tae OH
发明人： Hi-Kuk LEE , Sang-Hyun YUN , Cha-Dong KIM , Jung-In PARK , Deok-Man KANG , Youn-Suk KIM , Sae-Tae OH
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/30 , G03F7/022 , G03F7/0236 , H01L27/1288 , H01L29/41733
摘要： A photoresist composition is provided. The photoresist composition includes an alkali-soluble resin; a photosensitizer containing a first compound that contains a diazonaphthoquinone represented by Formula 1 and a second compound that contains a diazonaphthoquinone represented by Formula 2; and a solvent. andR1 is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbons, an alkenyl group having 2 to 4 carbons, a cycloalkyl group having 3 to 8 carbons, and an aryl group having 6 to 12 carbons, and R2 is selected from the group consisting of Cl, F, Br, and I.
摘要翻译：提供光致抗蚀剂组合物。光致抗蚀剂组合物包括碱溶性树脂; 含有含有由式1表示的重氮萘醌的第一化合物和含有由式2表示的重氮萘醌的第二化合物的光敏剂; 和溶剂。 R 1选自氢原子，碳原子数1〜4的烷基，碳原子数2〜4的烯基，碳原子数3〜8的环烷基，碳原子数6〜12的芳基，并且R 2选自Cl，F，Br和I.

8. 发明申请

US20090159922A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20090159922A1
公开(公告)日：2009-06-25
申请号：US12209644
申请日：2008-09-12
申请人： Hyun Soo KIM , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
发明人： Hyun Soo KIM , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/641 , H01L33/14 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween; n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of a material containing In and a second layer formed on the first layer and formed of a material containing W.According to an aspect of the invention, there is provided a nitride semiconductor light emitting device that has an n-type electrode having thermal stability and excellent electrical characteristics without heat treatment.According to another aspect of the invention, there is provided a method of manufacturing a nitride semiconductor light emitting device optimized to obtain the excellent thermal and electrical characteristics.
摘要翻译：提供一种氮化物半导体发光器件，包括：具有n型和p型氮化物半导体层的发光结构和在其间形成的有源层; 分别与n型和p型氮化物半导体电连接的n型和p型电极; 以及形成在n型氮化物半导体层和n型电极之间的n型欧姆接触层，并且具有由含有In的材料形成的第一层和形成在第一层上的由包含W的材料形成的第二层根据本发明的一个方面，提供一种氮化物半导体发光器件，其具有不具有热稳定性的热稳定性和优异的电特性的n型电极。根据本发明的另一方面，提供了一种制造优化以获得优异的热和电特性的氮化物半导体发光器件的方法。

9. 发明授权

US5841725A Charge pump circuit for a semiconductor memory device 失效
标题翻译：用于半导体存储器件的电荷泵电路
公开(公告)号：US5841725A
公开(公告)日：1998-11-24
申请号：US918667
申请日：1997-08-28
申请人： Chang-Man Kang , Young-Hyun Jun
发明人： Chang-Man Kang , Young-Hyun Jun
IPC分类号： G11C16/06 , G05F3/26 , G11C5/14 , H02M3/07
CPC分类号： G05F3/262 , G11C5/145 , H02M3/073
摘要： A charge pump circuit of a semiconductor memory device provides high efficiency. A high voltage detector outputs a high voltage detection signal. A regulator outputs a high level and a controller is triggered at a descent edge of a row access strobe bar signal and outputs a high level row access strobe bar pulse signal. An oscillator generates an oscillation pulse signal in accordance with the high level turn-on signal outputted from the regulator. A charge pump performs a pumping operation until the oscillation pulse signal reaches a potential of (Vdd+2Vt) when the oscillation pulse signal is applied thereto, and halts the pumping operation when the high level high voltage detection signal is applied. A pull-up transistor precharges the raised voltage Vpp to a potential of (Vdd-Vt) when power is turned on. The circuit enables a charge pump to have a double booster and a pumping capacitor, thereby satisfying a fast charge supply at a low level voltage and to supply an appropriate amount of charge at a high level voltage.
摘要翻译：半导体存储器件的电荷泵电路提供高效率。高电压检测器输出高电压检测信号。调节器输出高电平，并且控制器在行访问选通条信号的下降沿触发，并输出高电平行存取选通脉冲信号。振荡器根据从调节器输出的高电平开启信号产生振荡脉冲信号。当施加振荡脉冲信号时，电荷泵执行泵送操作，直到振荡脉冲信号达到（Vdd + 2Vt）的电位，并且当施加高电平高电压检测信号时停止泵浦操作。当电源接通时，上拉晶体管将升高的电压Vpp预充电到（Vdd-Vt）的电位。该电路使得电荷泵具有双升压器和泵浦电容器，从而在低电平电压下满足快速充电电源并且在高电平电压下提供适当量的电荷。

10. 发明申请

US20140291616A1 COMPOUND TUNNELING FIELD EFFECT TRANSISTOR INTEGRATED ON SILICON SUBSTRATE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：集成在硅基板上的复合隧道场效应晶体管及其制造方法
公开(公告)号：US20140291616A1
公开(公告)日：2014-10-02
申请号：US14357685
申请日：2011-12-30
申请人： Byung-Gook Park , Seongjae Cho , In Man Kang
发明人： Byung-Gook Park , Seongjae Cho , In Man Kang
IPC分类号： H01L29/775 , H01L29/66
CPC分类号： H01L29/775 , H01L29/0657 , H01L29/267 , H01L29/42312 , H01L29/66356 , H01L29/66439 , H01L29/7391
摘要： Compound tunneling field effect transistors integrated on a silicon substrate are provided with increased tunneling efficiency and an abrupt band slope by forming a source region with a material having a bandgap at least 0.4 electron volts (eV) narrower than that of silicon to increase a driving current (ON current) by forming a channel region with a material having almost no difference in lattice constant from a source region and having a high electron mobility at least 5 times higher than silicon. ON/OFF current ratio simultaneously is increased by forming a drain region with a material having a bandgap at least as wide as a channel region material to restrain OFF current. Tunneling field effect transistors having various threshold voltages according to circuit designs are formed easily by adding a specific material with an electron affinity less than a source region material when forming a channel region.
摘要翻译：集成在硅衬底上的复合隧道场效应晶体管具有增加的隧穿效率和突变带斜率，通过形成具有比硅的带隙更小的至少0.4电子伏（eV）的带隙的材料的源极区，以增加驱动电流（导通电流）通过形成具有与源极区域的晶格常数几乎没有差异的材料的沟道区域，并且具有比硅高至少5倍的高电子迁移率。通过用具有至少与沟道区域材料一样宽的带隙的材料形成漏极区域来同时增加ON / OFF电流比，以限制关断电流。通过在形成沟道区域时，通过添加小于源区材料的电子亲和力的特定材料，容易地形成具有根据电路设计的各种阈值电压的隧穿场效应晶体管。

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