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1. 发明申请

US20150090999A1 WHITE LED 有权
标题翻译：白色LED
公开(公告)号：US20150090999A1
公开(公告)日：2015-04-02
申请号：US14146097
申请日：2014-01-02
申请人： Lung-Han Peng , Yao-Te Wang , Po-Chun Yeh , Po-Ting Lee
发明人： Lung-Han Peng , Yao-Te Wang , Po-Chun Yeh , Po-Ting Lee
IPC分类号： H01L33/08 , H01L33/32 , H01L33/34 , H01L33/28
CPC分类号： H01L33/08 , H01L33/26 , H01L33/32
摘要： A white LED is provided. The white LED includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first metal oxide layer. The active layer includes a second metal oxide layer. The second barrier layer includes a third metal oxide layer. The N-type layer is disposed over the tunneling structure. The N-type electrode and the P-type electrode are respectively contacted with the N-type layer and the P-type layer. An energy gap of the second metal oxide layer is lower than an energy gap of the first metal oxide layer and is lower than an energy gap of the third metal oxide layer.
摘要翻译：提供白色LED。白色LED包括P型层，隧道结构，N型层，N型电极和P型电极。隧道结构设置在P型层上。隧道结构包括第一阻挡层，有源层和第二阻挡层。第一阻挡层包括第一金属氧化物层。有源层包括第二金属氧化物层。第二阻挡层包括第三金属氧化物层。 N型层设置在隧道结构之上。 N型电极和P型电极分别与N型层和P型层接触。第二金属氧化物层的能隙低于第一金属氧化物层的能隙，并且低于第三金属氧化物层的能隙。

2. 发明授权

US08481353B2 Method of separating nitride films from the growth substrates by selective photo-enhanced wet oxidation 有权
标题翻译：通过选择性光增强湿氧化从生长衬底分离氮化膜的方法
公开(公告)号：US08481353B2
公开(公告)日：2013-07-09
申请号：US13086787
申请日：2011-04-14
申请人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
发明人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L21/268 , H01L33/32
摘要： Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.
摘要翻译：本公开的各种实施例涉及通过选择性光增强湿氧化从生长衬底分离氮化物膜。在一个方面，一种方法可以通过选择性光增强湿氧化将与第一衬底结构结合的III族氮化物结构的一部分转变为III氧化物层。该方法还可以将第一衬底结构与III族氮化物结构分开。

3. 发明申请

US20120264247A1 Method of Separating Nitride Films from the Growth Substrates by Selective Photo-Enhanced Wet Oxidation 有权
标题翻译：通过选择性光增强湿氧化从生长底物分离氮化物膜的方法
公开(公告)号：US20120264247A1
公开(公告)日：2012-10-18
申请号：US13086787
申请日：2011-04-14
申请人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
发明人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
IPC分类号： H01L33/32 , H01L21/268
CPC分类号： H01L33/0079 , H01L21/268 , H01L33/32
摘要： Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.
摘要翻译：本公开的各种实施方案涉及通过选择性光增强湿氧化从生长衬底分离氮化物膜。在一个方面，一种方法可以通过选择性光增强湿氧化将与第一衬底结构结合的III族氮化物结构的一部分转变为III氧化物层。该方法还可以将第一衬底结构与III族氮化物结构分开。

4. 发明授权

US07977254B2 Method of forming a gate insulator in group III-V nitride semiconductor devices 有权
标题翻译：在III-V族氮化物半导体器件中形成栅极绝缘体的方法
公开(公告)号：US07977254B2
公开(公告)日：2011-07-12
申请号：US12931361
申请日：2007-06-27
申请人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
发明人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
IPC分类号： H01L21/31
CPC分类号： H01L21/02241 , H01L21/02258 , H01L21/02337 , H01L21/3143 , H01L21/31679 , H01L29/78681
摘要： A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.
摘要翻译：在制造半导体器件中形成栅极绝缘体的方法包括进行光辅助电化学处理以在半导体器件的氮化镓层上形成栅极绝缘层，其中栅极绝缘层包括氮氧化镓和镓并进行快速热退火处理。光辅助电化学方法使用包含缓冲CH 3 COOH的电解质浴，pH在约5.5和7.5之间。快速热退火过程在氧气环境中在约500℃至800℃之间的温度下进行。

5. 发明申请

US20110149399A1 ANTI-REFLECTION STRUCTURE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：抗反射结构及其制造方法
公开(公告)号：US20110149399A1
公开(公告)日：2011-06-23
申请号：US12774650
申请日：2010-05-05
申请人： Lung-Han Peng , Han-Min Wu
发明人： Lung-Han Peng , Han-Min Wu
IPC分类号： G02B1/11
CPC分类号： G02B1/118 , G02B3/0056
摘要： The embodiment provides an antireflection structure and a method for fabricating the same. The antireflection structure includes a substrate having a plurality of protruding structures adjacent to one another, thereby allowing light to transmit through. And a dielectric structural layer covers a plurality of the protruding structures.
摘要翻译：本实施例提供一种抗反射结构及其制造方法。防反射结构包括具有彼此相邻的多个突出结构的基板，从而允许光透过。并且介电结构层覆盖多个突出结构。

6. 发明授权

US07884345B2 Phase-change material, memory unit and method for electrically storing/reading data 有权
标题翻译：相变材料，存储单元和用于电存储/读取数据的方法
公开(公告)号：US07884345B2
公开(公告)日：2011-02-08
申请号：US12182644
申请日：2008-07-30
申请人： Lung-Han Peng , Sung-Li Wang , Meng-Kuei Hsieh , Chien-Yu Chen
发明人： Lung-Han Peng , Sung-Li Wang , Meng-Kuei Hsieh , Chien-Yu Chen
IPC分类号： H01L29/04
CPC分类号： C23C14/0676 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/145 , H01L45/1625 , Y10S438/90
摘要： A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or nitroxide, wherein the metal is at least one selected from a group consisting of indium, gallium and germanium. The memory unit includes a substrate; at least a first contact electrode formed on the substrate; a dielectric layer disposed on the substrate and formed with an opening for a layer of the phase-change material to be formed therein; and at least a second contact electrode disposed on the dielectric layer. As the phase-change material is in a single crystalline state and of a great discrepancy between high and low resistance states, the memory unit using the phase-changed material can achieve a phase-change characteristic rapidly by pulse voltage and avert any incomplete reset while with a low critical power.
摘要翻译：提供了相变材料和使用该相变材料的存储单元。相变材料为单晶状态，包括金属氧化物或氮氧化物的化合物，其中金属为选自铟，镓和锗的至少一种。存储单元包括基板; 至少形成在所述基板上的第一接触电极; 介电层，其设置在所述基板上，并且形成有用于要形成在其中的所述相变材料层的开口; 以及设置在电介质层上的至少第二接触电极。由于相变材料处于单晶状态，在高电阻状态和低电阻状态之间存在很大的差异，所以使用相变材料的存储器单元可以通过脉冲电压快速获得相变特性，并避免任何不完全复位具有低临界功率。

7. 发明申请

US20120194900A1 SECOND-HARMONIC GENERATION NONLINER FRENQUENCY CONVERTER 有权
标题翻译：第二谐波发生器非线性转换器
公开(公告)号：US20120194900A1
公开(公告)日：2012-08-02
申请号：US13218462
申请日：2011-08-26
申请人： Jiun-Wei LIOU , Jun-Ying LI , Chih-Ming LAI , Chern-Lin CHEN , Way-Seen WANG , Lung-Han PENG
发明人： Jiun-Wei LIOU , Jun-Ying LI , Chih-Ming LAI , Chern-Lin CHEN , Way-Seen WANG , Lung-Han PENG
IPC分类号： G02F1/37
CPC分类号： G02F1/37 , G02F1/3558 , G02F1/3775
摘要： A second-harmonic generation nonlinear frequency converter includes a nonlinear optical crystal. The nonlinear optical crystal includes a plurality of sections. The sections connect to each other in sequence, and each section has a phase different from others. Each of the phases includes a positive domain and a negative domain. Each of the sections includes a plurality of quasi-phase-matching structures. The quasi-phase-matching structures connect to each other in sequence and have the same phase in one section.
摘要翻译：二次谐波发生非线性频率转换器包括非线性光学晶体。非线性光学晶体包括多个部分。这些部分依次相互连接，每个部分的阶段与其他部分不同。每个相包括正域和负域。每个部分包括多个准相位匹配结构。准相位匹配结构依次相互连接，在一个部分中具有相同的相位。

8. 发明申请

US20110116519A1 APPARATUS AND METHOD FOR CONVERTING LASER ENERGY 审中-公开
标题翻译：用于转换激光能量的装置和方法
公开(公告)号：US20110116519A1
公开(公告)日：2011-05-19
申请号：US12720162
申请日：2010-03-09
申请人： Lung-Han Peng , Chih-Ming Lai , I-Ning Hu , Ying-Yao Lai , Chu-Hsuan Haung
发明人： Lung-Han Peng , Chih-Ming Lai , I-Ning Hu , Ying-Yao Lai , Chu-Hsuan Haung
IPC分类号： H01S3/10
CPC分类号： H01S3/1083 , G02F1/3532 , G02F1/39 , G02F2001/3546 , G02F2001/3548
摘要： Provided are an apparatus and a method for converting laser energy, characterized by employing an optical parametric oscillator for converting light of a green laser wavelength into light of a blue or red laser wavelength via a phase matching structure, by means of a non-linear optical crystal having a one-dimensional quasi-phase matching structure with a single grating period under appropriately-controlled temperature conditions. The non-linear optical crystal with the single grating period facilitates optical parametric oscillation and second harmonic generation to thereby enable green-to-blue wavelength conversion with a slope efficiency greater than 20%. Under 400 mW green light pump laser action, a periodically poled LiTaO3 crystal with a crystal length of 15 mm and without a resistant reflective plating film on its end face is capable of outputting a blue light laser beam of 56 mW.
摘要翻译：提供了一种用于转换激光能量的装置和方法，其特征在于采用光学参量振荡器，通过相位匹配结构，通过非线性光学器件将绿色激光波长的光转换成蓝色或红色激光波长的光晶体具有在适当控制的温度条件下具有单个光栅周期的一维准相位匹配结构。具有单光栅周期的非线性光学晶体便于光参量振荡和二次谐波产生，从而使得斜率效率大于20％的绿 - 蓝波长转换成为可能。在400mW绿光泵浦激光作用下，晶体长度为15mm的周期极化的LiTaO3晶体在其端面上没有耐反射镀膜，能够输出56mW的蓝光激光束。

9. 发明申请

US20060121700A1 Method of forming a gate insulator in group III-V nitride semiconductor devices 有权
标题翻译：在III-V族氮化物半导体器件中形成栅极绝缘体的方法
公开(公告)号：US20060121700A1
公开(公告)日：2006-06-08
申请号：US11005193
申请日：2004-12-06
申请人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
发明人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
IPC分类号： H01L21/84 , H01L21/20
CPC分类号： H01L21/02241 , H01L21/02258 , H01L21/02337 , H01L21/3143 , H01L21/31679 , H01L29/78681
摘要： A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.
摘要翻译：在制造半导体器件中形成栅极绝缘体的方法包括进行光辅助电化学处理以在半导体器件的氮化镓层上形成栅极绝缘层，其中栅极绝缘层包括氮氧化镓和镓并进行快速热退火处理。光辅助电化学方法在约5.5和7.5之间的pH下使用包括缓冲CH 3 COOH的电解质浴。快速热退火工艺在O 2 O 2环境中在约500℃至800℃的温度下进行。

10. 发明申请

US20060014368A1 METHOD FOR MANUFACTURING GALLIUM NITRIDE BASED TRANSPARENT CONDUCTIVE OXIDIZED FILM OHMIC ELECTRODES 有权
标题翻译：用于制造基于氮化镓的透明导电氧化膜电极的方法
公开(公告)号：US20060014368A1
公开(公告)日：2006-01-19
申请号：US10892180
申请日：2004-07-16
申请人： Lung-Han Peng , Han-Ming Wu , Sung-Li Wang , Chia-Wei Chang , Chin-Yi Lin
发明人： Lung-Han Peng , Han-Ming Wu , Sung-Li Wang , Chia-Wei Chang , Chin-Yi Lin
IPC分类号： H01L21/28
CPC分类号： H01L33/42 , H01L33/32
摘要： A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.
摘要翻译：一种制造氮化镓基透明导电氧化膜欧姆电极的方法包括在GaN层上形成透明导电膜，通过离子在GaN层的表面上的透明导电膜上形成具有相反电特性的透明导电异质结扩散工艺，并在后续制造操作中在布线工艺的透明导电异质结表面上铺设金属厚膜。因此，通过离子扩散过程中的电子和空穴隧穿效应，可以改善异质结的费米能级以形成欧姆接触电极。

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