专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060264042A1 Interconnect structure including a silicon oxycarbonitride layer 审中-公开
标题翻译：互连结构包括硅碳氮氧化物层
公开(公告)号：US20060264042A1
公开(公告)日：2006-11-23
申请号：US11134698
申请日：2005-05-20
申请人： Laura Matz , Ting Tsui , Robert Kraft
发明人： Laura Matz , Ting Tsui , Robert Kraft
IPC分类号： H01L21/44
CPC分类号： H01L23/53295 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/53233 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an interconnect structure, a method of manufacture therefore, and an integrated circuit including the same. In one embodiment of the present invention, the interconnect structure includes a conductive feature (150) located in or over a dielectric layer (140), and a silicon oxycarbonitride layer (160) located over the conductive feature (150).
摘要翻译：本发明提供互连结构，因此制造方法，以及包括其的集成电路。在本发明的一个实施例中，互连结构包括位于介电层（140）中或上方的导电特征（150）和位于导电特征（150）之上的硅碳氮氧化物层（160）。

2. 发明申请

US20050241672A1 Extraction of impurities in a semiconductor process with a supercritical fluid 审中-公开
标题翻译：用超临界流体萃取半导体工艺中的杂质
公开(公告)号：US20050241672A1
公开(公告)日：2005-11-03
申请号：US10917772
申请日：2004-08-13
申请人： Phillip Matz , Sameer Ajmera , Ju-Ai Ruan , Jinyoung Kim , Zhijian Lu , Laura Matz
发明人： Phillip Matz , Sameer Ajmera , Ju-Ai Ruan , Jinyoung Kim , Zhijian Lu , Laura Matz
IPC分类号： B08B6/00 , B08B7/00 , H01L21/02 , H01L21/3105
CPC分类号： H01L21/3105 , B08B7/0021 , H01L21/02101
摘要： A method comprises extracting impurities from one or more materials in a semiconductor device via treatment with a supercritical fluid (SCF). The SCF may comprise a solvent and one or more co-solvents. Solvents may comprise 1-hexanol, 1-propanol, 2-propanol, acetone, ammonia, argon, carbon dioxide, chlorotrifluoromethane, cyclohexane, dichlorodifluoromethane, ethane, ethyl alcohol, ethylene, methane, methanol, n-butane, n-hexane, nitrous oxide, n-pentane, propane, propylene, toluene, trichlorofluoromethane, trichloromethane, water, or combinations thereof.
摘要翻译：一种方法包括通过用超临界流体（SCF）处理从半导体器件中的一种或多种材料中提取杂质。 SCF可以包含溶剂和一种或多种共溶剂。溶剂可以包括1-己醇，1-丙醇，2-丙醇，丙酮，氨，氩气，二氧化碳，三氟甲烷，环己烷，二氯二氟甲烷，乙烷，乙醇，乙烯，甲烷，甲醇，正丁烷，正己烷，亚硝酸氧化物，正戊烷，丙烷，丙烯，甲苯，三氯氟甲烷，三氯甲烷，水或其组合。

3. 发明授权

US07745238B2 Monitoring of temperature variation across wafers during processing 有权
标题翻译：监控处理过程中晶片的温度变化
公开(公告)号：US07745238B2
公开(公告)日：2010-06-29
申请号：US12037531
申请日：2008-02-26
申请人： Deepak A. Ramappa , Rosa A. Orozco-Teran , Laura Matz
发明人： Deepak A. Ramappa , Rosa A. Orozco-Teran , Laura Matz
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L22/10
摘要： A method of measuring temperature across wafers during semiconductor processing includes the step of providing a correlation between a peak wafer temperature during a processing step and a change in wafer surface charge or surface potential following the processing step. A first wafer to be characterized for its peak temperature spatial distribution during the processing step is processed through the processing step. The wafer surface charge or surface potential at a plurality of locations on the first wafer are measured following the processing step. A peak temperature spatial distribution for the first wafer is then determined based on the correlation and the wafer surface charge or surface potential measured in the measuring step.
摘要翻译：在半导体处理期间测量晶片温度的方法包括在处理步骤之间提供峰值晶片温度与处理步骤之后的晶片表面电荷或表面电位的变化之间的相关性的步骤。通过处理步骤处理在处理步骤期间用于其峰值温度空间分布的特征的第一晶片。在处理步骤之后测量在第一晶片上的多个位置处的晶片表面电荷或表面电位。然后基于在测量步骤中测量的相关性和晶片表面电荷或表面电位来确定第一晶片的峰值温度空间分布。

4. 发明申请

US20090215203A1 MONITORING OF TEMPERATURE VARIATION ACROSS WAFERS DURING PROCESSING 有权
标题翻译：在加工过程中监测波形温度变化
公开(公告)号：US20090215203A1
公开(公告)日：2009-08-27
申请号：US12037531
申请日：2008-02-26
申请人： Deepak A. Ramppa , Rosa A. Orozco-Teran , Laura Matz
发明人： Deepak A. Ramppa , Rosa A. Orozco-Teran , Laura Matz
IPC分类号： H01L21/66
CPC分类号： H01L22/10
摘要： A method of measuring temperature across wafers during semiconductor processing includes the step of providing a correlation between a peak wafer temperature during a processing step and a change in wafer surface charge or surface potential following the processing step. A first wafer to be characterized for its peak temperature spatial distribution during the processing step is processed through the processing step. The wafer surface charge or surface potential at a plurality of locations on the first wafer are measured following the processing step. A peak temperature spatial distribution for the first wafer is then determined based on the correlation and the wafer surface charge or surface potential measured in the measuring step.
摘要翻译：在半导体处理期间测量晶片温度的方法包括在处理步骤之间提供峰值晶片温度与处理步骤之后的晶片表面电荷或表面电位的变化之间的相关性的步骤。通过处理步骤处理在处理步骤期间用于其峰值温度空间分布的特征的第一晶片。在处理步骤之后测量在第一晶片上的多个位置处的晶片表面电荷或表面电位。然后基于在测量步骤中测量的相关性和晶片表面电荷或表面电位来确定第一晶片的峰值温度空间分布。

5. 发明申请

US20070184666A1 Method for removing residue containing an embedded metal 审中-公开
标题翻译：去除含有嵌入金属的残留物的方法
公开(公告)号：US20070184666A1
公开(公告)日：2007-08-09
申请号：US11349864
申请日：2006-02-08
申请人： Patricia Smith , Heungsoo Park , Laura Matz , Vinay Shah , Phillip Matz
发明人： Patricia Smith , Heungsoo Park , Laura Matz , Vinay Shah , Phillip Matz
IPC分类号： H01L21/302 , H01L21/31
CPC分类号： H01L21/02063 , H01L21/76814
摘要： The present invention provides a method for removing residue from a cavity during the formation of an interconnect structure, a method for manufacturing an interconnect structure using the same, and a method for manufacturing an integrated circuit using the same. The method for removing residue from a cavity during the formation of an interconnect structure, among other steps, may include subjecting residue (410) having an embedded metal therein located within a cavity (310) in a dielectric layer (240) and over at least a portion of a conductive feature (220) to a short duration oxidation process so as to oxidize a substantial portion of the embedded metal, and removing the residue (410) containing the oxidized embedded metal using an etch process.
摘要翻译：本发明提供了在形成互连结构期间从空腔中除去残留物的方法，使用该互连结构的互连结构的制造方法以及使用该互连结构的集成电路的制造方法。在互连结构形成期间除去空腔中的残留物的方法以及其它步骤可包括将位于介电层（240）内的位于空腔（310）内的嵌入金属的残余物（410）至少导电特征（220）的一部分延伸至短时间氧化过程，以便氧化大部分嵌入金属，以及使用蚀刻工艺去除含有氧化的嵌入金属的残余物（410）。

6. 发明申请

US20060281312A1 Hydrogen and oxygen based photoresist removal process 有权
标题翻译：氢和氧基光刻胶去除工艺
公开(公告)号：US20060281312A1
公开(公告)日：2006-12-14
申请号：US11147959
申请日：2005-06-08
申请人： Patricia Smith , Laura Matz , Vinay Shah
发明人： Patricia Smith , Laura Matz , Vinay Shah
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31138 , G03F7/427
摘要： The present invention provides a photoresist removal process and a method for manufacturing an interconnect using the same. One embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, and removing the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium and a small amount of oxygen less than about 20 volume percent of the gas. Another embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, removing a bulk portion of the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium, and removing a small portion of the photoresist layer using a plasma which incorporates a gas which includes oxygen, wherein the order of the two removing steps is interchangeable.
摘要翻译：本发明提供一种光致抗蚀剂去除方法及其制造方法。除了其他步骤之外，光致抗蚀剂去除方法的一个实施方案包括提供具有位于其上的光致抗蚀剂层的低介电常数（k）衬底，以及使用包含氢或氘和少量气体的等离子体去除光致抗蚀剂层的氧气小于约20体积％的气体。除了其他步骤之外，光致抗蚀剂去除方法的另一个实施方案包括提供具有位于其上的光致抗蚀剂层的低介电常数（k）衬底，使用包含氢或氘的气体的等离子体去除光致抗蚀剂层的主体部分，以及使用包含氧气的等离子体去除一部分光致抗蚀剂层，其中两个除去步骤的顺序是可互换的。

7. 发明申请

US20060243792A1 Stored-value card for variable printing and methods of using and making the same 审中-公开
标题翻译：可变印刷的储值卡和使用和制作相同的方法
公开(公告)号：US20060243792A1
公开(公告)日：2006-11-02
申请号：US11397408
申请日：2006-04-04
申请人： Peter Morello , Eitan Zeira , Richard Selah , Laura Matz
发明人： Peter Morello , Eitan Zeira , Richard Selah , Laura Matz
IPC分类号： G06K5/00 , G06K19/00
CPC分类号： G06Q20/04 , G06K19/077 , G06Q20/363 , G07F7/086 , G07F7/0866
摘要： A stored-value card is provided which can be customized or imprinted with customer-friendly information at a point-of-sale. The stored-value card is made of a flexible material and includes a machine-readable data storage medium. The stored-value card also has at least one ink-receptive printable region which allows variable printing. One or more security features may be included on the stored-value card. Methods of using and making the stored-value card are provided.
摘要翻译：提供储值卡，可以在销售点定制或印制客户友好的信息。存储卡由柔性材料制成并且包括机器可读数据存储介质。存储卡还具有允许可变打印的至少一个可接受油墨的可打印区域。存储值卡可以包括一个或多个安全特征。提供使用和制作储值卡的方法。

8. 发明申请

US20060293181A1 Thermal recording materials and methods of making and using the same 审中-公开
标题翻译：热敏记录材料及其使用方法
公开(公告)号：US20060293181A1
公开(公告)日：2006-12-28
申请号：US11454234
申请日：2006-06-16
申请人： Robert Menize , Eitan Zeira , Peter Morello , Richard Selah , Trevor Kelley , Laura Matz , David DeGulis
发明人： Robert Menize , Eitan Zeira , Peter Morello , Richard Selah , Trevor Kelley , Laura Matz , David DeGulis
IPC分类号： B41M5/24
CPC分类号： B41M5/30 , B41M3/142 , B41M5/323 , B41M5/327 , B41M5/3275 , B41M5/3335 , B41M5/3375 , B41M5/34 , B41M5/465 , B41M2205/04
摘要： Disclosed are thermal recording materials including different regions for recording latent and visible images. The thermal recording materials of the present teachings can include a substrate, a base coating containing an electron-accepting compound, and two or more top coatings each containing a different electron-donating compound. Latent images can be formed in exposed regions of the base coating, while visible images can be recorded in different colors in exposed regions of the top coatings. Methods of preparing and using the thermal recording materials also are disclosed.
摘要翻译：公开了包括用于记录潜在和可见图像的不同区域的热记录材料。本教导的热敏记录材料可以包括基底，含有电子接受性化合物的基底涂层，以及两种或更多种各自含有不同给电子化合物的顶涂层。潜在图像可以形成在基底涂层的暴露区域中，而可见图像可以以不同的颜色记录在顶部涂层的暴露区域中。还公开了制备和使用热敏记录材料的方法。

9. 发明申请

US20060264028A1 Energy beam treatment to improve the hermeticity of a hermetic layer 审中-公开
标题翻译：能量束处理以提高密封层的气密性
公开(公告)号：US20060264028A1
公开(公告)日：2006-11-23
申请号：US11134566
申请日：2005-05-20
申请人： Laura Matz , Ting Tsui , Robert Kraft
发明人： Laura Matz , Ting Tsui , Robert Kraft
IPC分类号： H01L21/469
CPC分类号： H01L21/3105 , H01L21/76825 , H01L21/76829 , H01L23/5329 , H01L23/564 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a process for increasing the hermeticity of a hermetic layer, a method for manufacturing an interconnect structure, and a method for manufacturing an integrated circuit. The process for increasing the hermeticity of the hermetic layer, without limitation, includes providing a hermetic layer over a substrate (160), the hermetic layer having a initial hermeticity, and subjecting the hermetic layer to an energy beam, thereby causing the initial hermeticity to improve (170).
摘要翻译：本发明提供一种增加气密层的气密性的方法，一种互连结构的制造方法以及集成电路的制造方法。增加密封层的气密性而不是限制的方法包括在衬底（160）上提供密封层，密封层具有初始密封性，并且使密封层经受能量束，从而使初始气密性改善（170）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式