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    • 2. 发明授权
    • Integrated fuzzing
    • 综合模糊
    • US08862940B2
    • 2014-10-14
    • US13372890
    • 2012-02-14
    • Jiong QiuMichael Allan FriedmanCharles Patrick MannKwan-Leung ChanJeremy Lynn Reed
    • Jiong QiuMichael Allan FriedmanCharles Patrick MannKwan-Leung ChanJeremy Lynn Reed
    • G06F11/00
    • G06F11/3608G06F11/263G06F11/368G06F11/3688
    • Integrated fuzzing techniques are described. A fuzzing system may employ a container configured as a separate component that can host different target pages to implement fuzzing for an application. A hosted target file is loaded as a subcomponent of the container and parsed to recognize functionality of the application invoked by the file. In at least some embodiments, this involves building a document object model (DOM) for a browser page and determining DOM interfaces of a browser to call based on the page DOM. The container then operates to systematically invoke the recognized functionality to cause and detect failures. Additionally, the container may operate to perform iterative fuzzing with multiple test files in an automation mode. Log files may be created to describe the testing and enable both self-contained replaying of failures and coverage analysis for multiple test runs.
    • 描述了集成的模糊技术。 模糊系统可以使用被配置为可以托管不同目标页面以实现应用程序的模糊的单独组件的容器。 托管的目标文件作为容器的子组件加载并进行解析,以识别该文件调用的应用程序的功能。 在至少一些实施例中,这涉及为浏览器页面建立文档对象模型(DOM),并且基于页面DOM确定浏览器的DOM接口进行调用。 然后,容器操作以系统地调用识别的功能以引起和检测故障。 此外,容器可以在自动化模式下操作以执行具有多个测试文件的迭代模糊。 可以创建日志文件来描述测试,并启用对多个测试运行的故障自动重放和覆盖分析。
    • 5. 发明申请
    • METHODS FOR FORMING DOPED REGIONS IN A SEMICONDUCTOR MATERIAL
    • 在半导体材料中形成掺杂区域的方法
    • US20100035422A1
    • 2010-02-11
    • US12186999
    • 2008-08-06
    • Roger Yu-Kwan LeungDe-Ling ZhouWenya Fan
    • Roger Yu-Kwan LeungDe-Ling ZhouWenya Fan
    • H01L21/22
    • H01L21/228H01L31/0288H01L31/068H01L31/0682H01L31/1804Y02E10/547Y02P70/521
    • Methods for forming doped regions in a semiconductor material that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material and methods for fabricating semiconductor devices that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material are provided. In one exemplary embodiment, a method for forming doped regions in a semiconductor material comprises depositing a conductivity-determining type dopant comprising a dopant element overlying a first portion of the semiconductor material. A diffusion barrier material is applied such that it overlies a second portion of the semiconductor material. The dopant element of the conductivity-determining type dopant is diffused into the first portion of the semiconductor material.
    • 在掺杂剂元素和/或掺杂剂从沉积的掺杂剂和/或半导体材料中最小化或消除蒸汽扩散的半导体材料中形成掺杂区域的方法以及用于制造半导体器件的方法,该半导体器件最小化或消除掺杂元素的蒸气扩散 和/或来自沉积的掺杂剂和/或半导体材料的掺杂剂。 在一个示例性实施例中,用于在半导体材料中形成掺杂区域的方法包括沉积包含覆盖半导体材料的第一部分的掺杂剂元素的导电率确定型掺杂剂。 施加扩散阻挡材料,使其覆盖半导体材料的第二部分。 导电性确定型掺杂剂的掺杂剂元素扩散到半导体材料的第一部分。
    • 7. 发明授权
    • Low dielectric constant porous films
    • 低介电常数多孔膜
    • US06204202B1
    • 2001-03-20
    • US09291510
    • 1999-04-14
    • Roger Yu-Kwan LeungSuzanne Case
    • Roger Yu-Kwan LeungSuzanne Case
    • H01L2131
    • H01L21/02126C09D183/04H01L21/02203H01L21/02216H01L21/02282H01L21/31695
    • The present invention relates to novel low dielectric constant nanoporous dielectric films having improved mechanical strength, and to improved processes for producing the same on substrates suitable for use in the production of integrated circuits. The nanoporous dielectric films are prepared by a process of preparing a mixture of a spin-on-glass material with a suitable thermally degradable polymer that is soluble in polar solvents. The resulting mixture is then applied onto a substrate suitable for use in the production of an integrated circuit, to produce a coated substrate that is heated for a time and at one or more temperatures effective to degrade the polymer, so as to produce the desired low dielectric nanoporous dielectric film.
    • 本发明涉及具有改进的机械强度的新颖的低介电常数纳米孔隙介电膜,以及用于在适用于集成电路生产中的基板上制造该介电薄膜的方法。 纳米多孔介电膜通过制备旋涂玻璃材料与可溶于极性溶剂的合适的可热降解聚合物的混合物的方法制备。 然后将所得混合物施加到适合用于生产集成电路的基板上,以产生被加热一段时间并且在一个或多个温度下有效降解聚合物的涂覆基底,从而产生所需的低 介电纳米多孔介电膜。