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1. 发明授权

US06413882B1 Low dielectric foam dielectric formed from polymer decomposition 有权
标题翻译：低介电泡沫电介质由聚合物分解形成
公开(公告)号：US06413882B1
公开(公告)日：2002-07-02
申请号：US09291511
申请日：1999-04-14
申请人： Roger Yu-Kwan Leung , Suzanne Case
发明人： Roger Yu-Kwan Leung , Suzanne Case
IPC分类号： H01L2131
CPC分类号： H01L21/02137 , C09D183/04 , H01L21/02203 , H01L21/02282 , H01L21/31695
摘要： The present invention relates to novel low dielectric constant nanoporous dielectric films having improved mechanical strength, and to improved processes for producing the same on substrates suitable for use in the production of integrated circuits. The nanoporous dielectric films are prepared by a process of preparing a mixture of a spin-on-glass material with a suitable thermally degradable polymer that is soluble in nonpolar solvents. Applying the resulting mixture onto a substrate suitable for use in the production of an integrated circuit, to produce a coated substrate. The coated substrate is then heated for a time and at one or more temperatures effective to remove the thermally degradable polymer, so as to produce the desired low dielectric nanoporous dielectric film.
摘要翻译：本发明涉及具有改进的机械强度的新颖的低介电常数纳米孔隙介电膜，以及用于在适用于集成电路生产中的基板上制造该介电薄膜的方法。纳米多孔介电膜通过制备旋涂玻璃材料与可溶于非极性溶剂的合适的可热降解聚合物的混合物的方法制备。将所得混合物施加到适合用于制造集成电路的基板上，以制造涂覆的基板。然后将涂覆的基材加热一段时间并在一个或多个温度下有效去除可热降解的聚合物，以便产生所需的低介电纳米多孔介电膜。

2. 发明授权

US06204202B1 Low dielectric constant porous films 失效
标题翻译：低介电常数多孔膜
公开(公告)号：US06204202B1
公开(公告)日：2001-03-20
申请号：US09291510
申请日：1999-04-14
申请人： Roger Yu-Kwan Leung , Suzanne Case
发明人： Roger Yu-Kwan Leung , Suzanne Case
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： The present invention relates to novel low dielectric constant nanoporous dielectric films having improved mechanical strength, and to improved processes for producing the same on substrates suitable for use in the production of integrated circuits. The nanoporous dielectric films are prepared by a process of preparing a mixture of a spin-on-glass material with a suitable thermally degradable polymer that is soluble in polar solvents. The resulting mixture is then applied onto a substrate suitable for use in the production of an integrated circuit, to produce a coated substrate that is heated for a time and at one or more temperatures effective to degrade the polymer, so as to produce the desired low dielectric nanoporous dielectric film.
摘要翻译：本发明涉及具有改进的机械强度的新颖的低介电常数纳米孔隙介电膜，以及用于在适用于集成电路生产中的基板上制造该介电薄膜的方法。纳米多孔介电膜通过制备旋涂玻璃材料与可溶于极性溶剂的合适的可热降解聚合物的混合物的方法制备。然后将所得混合物施加到适合用于生产集成电路的基板上，以产生被加热一段时间并且在一个或多个温度下有效降解聚合物的涂覆基底，从而产生所需的低介电纳米多孔介电膜。

3. 发明申请

US20100162920A1 BORON-COMPRISING INKS FOR FORMING BORON-DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES USING NON-CONTACT PRINTING PROCESSES AND METHODS FOR FABRICATING SUCH BORON-COMPRISING INKS 失效
标题翻译：使用非接触式印刷工艺在半导体基板中形成硼掺杂区域的包含墨水的方法和用于制造这种含硼的墨水的方法
公开(公告)号：US20100162920A1
公开(公告)日：2010-07-01
申请号：US12344745
申请日：2008-12-29
申请人： Roger Yu-Kwan Leung , De-Ling Zhou , Wenya Fan
发明人： Roger Yu-Kwan Leung , De-Ling Zhou , Wenya Fan
IPC分类号： C09D11/00 , C08L83/04 , C08L85/04
CPC分类号： C09D11/30 , C08G77/20 , C08G77/46 , C09D11/38 , C09D11/52 , H01L21/2225
摘要： Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks are provided. A boron-comprising ink comprises boron from or of a boron-comprising material and a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6. The boron-comprising ink has a viscosity in a range of from about 1.5 to about 50 centipoise and, when deposited on a semiconductor substrate, provides a post-anneal sheet resistance in a range of from about 10 to about 100 ohms/square, a post-anneal doping depth in a range of from about 0.1 to about 1 μm, and a boron concentration in a range of from about 1×1019 to 1×1020 atoms/cm3.
摘要翻译：提供了用于使用非接触印刷方法在半导体衬底中形成硼掺杂区域的含硼油墨以及用于制造这种含硼油墨的方法。含硼油墨包括来自含硼材料的硼或扩散最小化添加剂，其导致含硼油墨在约1.5至约6的范围内的铺展因子。含硼油墨具有粘度在约1.5至约50厘泊的范围内，并且当沉积在半导体衬底上时，提供在约10至约100欧姆/平方的范围内的退火后电阻值，后退火掺杂深度约0.1至约1μm的范围，硼浓度在约1×1019至1×1020原子/ cm3的范围内。

4. 发明申请

US20150126653A1 DOPANT INK COMPOSITIONS FOR FORMING DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES, AND METHODS FOR FABRICATING DOPANT INK COMPOSITIONS 审中-公开
标题翻译：用于在半导体衬底中形成掺杂区域的多糖组合物，以及用于制备DOPANT INK组合物的方法
公开(公告)号：US20150126653A1
公开(公告)日：2015-05-07
申请号：US14595028
申请日：2015-01-12
申请人： Ligui Zhou , Richard A. Spear , Roger Yu-Kwan Leung , Wenya Fan , Helen X. Xu , Lea M. Metin , Anil Shriram Bhanap
发明人： Ligui Zhou , Richard A. Spear , Roger Yu-Kwan Leung , Wenya Fan , Helen X. Xu , Lea M. Metin , Anil Shriram Bhanap
IPC分类号： C09D11/02 , C08K5/5419 , C09D11/10
CPC分类号： C09D11/02 , C08K5/5419 , C09D11/03 , C09D11/10 , C09D11/38 , C09D11/52 , H01L21/2225
摘要： Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element. Further, the dopant ink composition includes a silicon-containing compound.
摘要翻译：提供了用于在半导体衬底中形成掺杂区域的掺杂剂油墨组合物和用于制造掺杂剂油墨组合物的方法。在示例性实施方案中，掺杂剂油墨组合物包含包含至少一个与第13族元素键合的烷基的掺杂剂化合物。此外，掺杂剂油墨组合物包含含硅化合物。

5. 发明授权

US5438025A Silicon oxycarbonitride by pyrolysis of polycyclosiloxanes in ammonia 失效
标题翻译：硅碳氮氧化物通过在氨中热分解多环硅氧烷
公开(公告)号：US5438025A
公开(公告)日：1995-08-01
申请号：US166428
申请日：1993-12-14
申请人： Roger Yu-Kwan Leung , Jon F. Nebo , Stephen T. Gonczy
发明人： Roger Yu-Kwan Leung , Jon F. Nebo , Stephen T. Gonczy
IPC分类号： C04B35/571 , C03C10/00 , C03C14/00 , C04B35/56 , C04B35/58 , C04B35/589 , C04B35/80 , C08G77/48 , C08G77/50
CPC分类号： C03C14/002 , C03C10/0009 , C04B35/806 , C03C2214/02 , C03C2214/03 , C03C2214/20
摘要： An improved fiber reinforced glass composite includes a refractory fiber in a matrix of a nitrogen-containing black glass ceramic having the empirical formula SiN.sub.z C.sub.x O.sub.y where x ranges from greater than zero up to about 2.0, preferably 0.1 to 1.0, y ranges from 0.5 up to about 3.0, preferably 0.7 to 1.8, and z ranges from above zero up to about 1.5, preferably 0.2 to 1.0. Preferably the black glass ceramic is derived from cyclosiloxane monomers containing a vinyl group attached to silicon and/or a hydride-silicon group. The cyclosiloxane monomers are polymerized and then pyrolyzed in an ammonia-containing atmosphere to produce the nitrogen-containing black glass (silicon oxycarbonitride).
摘要翻译：改进的纤维增强玻璃复合材料包括具有经验式SiNzCxOy的含氮黑玻璃陶瓷的基质中的耐火纤维，其中x为大于零至约2.0，优选为0.1至1.0，y为0.5至约 3.0，优选0.7至1.8，z范围从高到零，最大为1.5，优选为0.2至1.0。优选地，黑色玻璃陶瓷衍生自包含与硅和/或氢化物 - 硅基团连接的乙烯基的环硅氧烷单体。将环硅氧烷单体聚合，然后在含氨气氛中热解生成含氮黑玻璃（硅碳氮氧化物）。

6. 发明申请

US20100167511A1 METHODS FOR SIMULTANEOUSLY FORMING DOPED REGIONS HAVING DIFFERENT CONDUCTIVITY-DETERMINING TYPE ELEMENT PROFILES 失效
标题翻译：同时形成具有不同电导率确定型元件型材的区域的方法
公开(公告)号：US20100167511A1
公开(公告)日：2010-07-01
申请号：US12344748
申请日：2008-12-29
申请人： Roger Yu-Kwan Leung , Nicole Rutherford , Anil Bhanap
发明人： Roger Yu-Kwan Leung , Nicole Rutherford , Anil Bhanap
IPC分类号： H01L21/22
CPC分类号： H01L21/2255 , H01L21/2225 , H01L31/022441 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Method for simultaneously forming doped regions having different conductivity-determining type elements profiles are provided. In one exemplary embodiment, a method comprises the steps of diffusing first conductivity-determining type elements into a first region of a semiconductor material from a first dopant to form a doped first region. Second conductivity-determining type elements are simultaneously diffused into a second region of the semiconductor material from a second dopant to form a doped second region. The first conductivity-determining type elements are of the same conductivity-determining type as the second conductivity-determining type elements. The doped first region has a dopant profile that is different from a dopant profile of the doped second region.
摘要翻译：提供了同时形成具有不同导电率确定型元件轮廓的掺杂区域的方法。在一个示例性实施例中，一种方法包括以下步骤：将第一导电决定型元件从第一掺杂剂扩散到半导体材料的第一区域中以形成掺杂的第一区域。第二导电率确定型元件同时从第二掺杂剂扩散到半导体材料的第二区域中以形成掺杂的第二区域。第一导电率确定型元件具有与第二导电率确定型元件相同的导电率确定类型。掺杂的第一区域具有与掺杂的第二区域的掺杂物分布不同的掺杂剂分布。

7. 发明申请

US20090239363A1 METHODS FOR FORMING DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES USING NON-CONTACT PRINTING PROCESSES AND DOPANT-COMPRISING INKS FOR FORMING SUCH DOPED REGIONS USING NON-CONTACT PRINTING PROCESSES 审中-公开
标题翻译：使用非接触式印刷工艺形成半导体基板中的掺杂区域的方法和使用非接触式印刷工艺形成这种掺杂区域的包覆墨水
公开(公告)号：US20090239363A1
公开(公告)日：2009-09-24
申请号：US12274006
申请日：2008-11-19
申请人： Roger Yu-Kwan Leung , De-Ling Zhou , Wenya Fan
发明人： Roger Yu-Kwan Leung , De-Ling Zhou , Wenya Fan
IPC分类号： H01L21/225 , C09D11/00 , H01B1/02
CPC分类号： H01L21/228 , C09D11/36 , C09D11/38 , C09D11/52 , H01L21/2225 , H01L31/18
摘要： Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes are provided. In an exemplary embodiment, a method for forming doped regions in a semiconductor substrate is provided. The method comprises providing an ink comprising a conductivity-determining type dopant, applying the ink to the semiconductor substrate using a non-contact printing process, and subjecting the semiconductor substrate to a thermal treatment such that the conductivity-determining type dopant diffuses into the semiconductor substrate.
摘要翻译：提供了使用非接触印刷方法在半导体基板中形成掺杂区域的方法和使用非接触印刷方法形成这种掺杂区域的掺杂剂油墨的方法。在一个示例性实施例中，提供了一种用于在半导体衬底中形成掺杂区域的方法。所述方法包括提供包含导电性确定型掺杂剂的油墨，使用非接触印刷方法将所述油墨施加到所述半导体基板，以及对所述半导体基板进行热处理，使得所述导电率确定型掺杂剂扩散到所述半导体基质。

8. 发明授权

US08975170B2 Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions 有权
标题翻译：用于在半导体衬底中形成掺杂区的掺杂剂油墨组合物，以及制造掺杂剂油墨组合物的方法
公开(公告)号：US08975170B2
公开(公告)日：2015-03-10
申请号：US13280077
申请日：2011-10-24
申请人： Ligui Zhou , Richard A. Spear , Roger Yu-Kwan Leung , Wenya Fan , Helen X. Xu , Lea M. Metin , Anil Shriram Bhanap
发明人： Ligui Zhou , Richard A. Spear , Roger Yu-Kwan Leung , Wenya Fan , Helen X. Xu , Lea M. Metin , Anil Shriram Bhanap
IPC分类号： H01L21/22 , C09D11/03 , C09D11/38 , C09D11/52
CPC分类号： C09D11/02 , C08K5/5419 , C09D11/03 , C09D11/10 , C09D11/38 , C09D11/52 , H01L21/2225
摘要： Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element or a Group 15 element. Further, the dopant ink composition includes a silicon-containing compound.
摘要翻译：提供了用于在半导体衬底中形成掺杂区域的掺杂剂油墨组合物和用于制造掺杂剂油墨组合物的方法。在示例性实施方案中，掺杂剂油墨组合物包含掺杂剂化合物，其包括至少一个与第13族元素或第15族元素键合的烷基。此外，掺杂剂油墨组合物包含含硅化合物。

9. 发明申请

US20130098266A1 DOPANT INK COMPOSITIONS FOR FORMING DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES, AND METHODS FOR FABRICATING DOPANT INK COMPOSITIONS 有权
标题翻译：用于在半导体衬底中形成掺杂区域的多糖组合物，以及用于制备DOPANT INK组合物的方法
公开(公告)号：US20130098266A1
公开(公告)日：2013-04-25
申请号：US13280077
申请日：2011-10-24
申请人： Ligui Zhou , Richard A. Spear , Roger Yu-Kwan Leung , Wenya Fan , Helen X. Xu , Lea M. Metin , Anil Shriram Bhanap
发明人： Ligui Zhou , Richard A. Spear , Roger Yu-Kwan Leung , Wenya Fan , Helen X. Xu , Lea M. Metin , Anil Shriram Bhanap
IPC分类号： C09D11/02
CPC分类号： C09D11/02 , C08K5/5419 , C09D11/03 , C09D11/10 , C09D11/38 , C09D11/52 , H01L21/2225
摘要： Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element or a Group 15 element. Further, the dopant ink composition includes a silicon-containing compound.
摘要翻译：提供了用于在半导体衬底中形成掺杂区域的掺杂剂油墨组合物和用于制造掺杂剂油墨组合物的方法。在示例性实施方案中，掺杂剂油墨组合物包含掺杂剂化合物，其包括至少一个与第13族元素或第15族元素键合的烷基。此外，掺杂剂油墨组合物包含含硅化合物。

10. 发明授权

US07820532B2 Methods for simultaneously forming doped regions having different conductivity-determining type element profiles 失效
标题翻译：同时形成具有不同导电率确定型元素分布的掺杂区的方法
公开(公告)号：US07820532B2
公开(公告)日：2010-10-26
申请号：US12344748
申请日：2008-12-29
申请人： Roger Yu-Kwan Leung , Nicole Rutherford , Anil Bhanap
发明人： Roger Yu-Kwan Leung , Nicole Rutherford , Anil Bhanap
IPC分类号： H01L21/04
CPC分类号： H01L21/2255 , H01L21/2225 , H01L31/022441 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Method for simultaneously forming doped regions having different conductivity-determining type elements profiles are provided. In one exemplary embodiment, a method comprises the steps of diffusing first conductivity-determining type elements into a first region of a semiconductor material from a first dopant to form a doped first region. Second conductivity-determining type elements are simultaneously diffused into a second region of the semiconductor material from a second dopant to form a doped second region. The first conductivity-determining type elements are of the same conductivity-determining type as the second conductivity-determining type elements. The doped first region has a dopant profile that is different from a dopant profile of the doped second region.
摘要翻译：提供了同时形成具有不同导电率确定型元件轮廓的掺杂区域的方法。在一个示例性实施例中，一种方法包括以下步骤：将第一导电率确定型元件从第一掺杂剂扩散到半导体材料的第一区域中以形成掺杂的第一区域。第二导电率确定型元件同时从第二掺杂剂扩散到半导体材料的第二区域中以形成掺杂的第二区域。第一导电率确定型元件具有与第二导电率确定型元件相同的导电率确定类型。掺杂的第一区域具有与掺杂的第二区域的掺杂物分布不同的掺杂剂分布。

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