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1. 再颁专利

USRE45462E1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：USRE45462E1
公开(公告)日：2015-04-14
申请号：US13569604
申请日：2012-08-08
申请人： Shinji Mori , Tsutomu Sato , Koji Matsuo
发明人： Shinji Mori , Tsutomu Sato , Koji Matsuo
IPC分类号： H01L29/78 , H01L29/772
CPC分类号： H01L29/772 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L29/66636 , H01L29/7848
摘要： A semiconductor device includes a first pMISFET region having an Si channel, a second pMISFET region having an Si channel and an nMISFET region having an Si channel. First SiGe layers which apply first compression strain to the Si channel are embedded and formed in the first pMISFET region to sandwich the Si channel thereof and second SiGe layers which apply second compression strain different from the first compression strain to the Si channel are embedded and formed in the second pMISFET region to sandwich the Si channel thereof.
摘要翻译：半导体器件包括具有Si沟道的第一pMISFET区，具有Si沟道的第二pMISFET区和具有Si沟道的nMISFET区。将第一压缩应变施加到Si沟道的第一SiGe层嵌入并形成在第一pMISFET区域中以夹持其Si沟道，并且将施加与第一压缩应变不同的第二压缩应变的第二SiGe层嵌入并形成在第二pMISFET区域夹持其Si通道。

2. 发明授权

US08211796B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08211796B2
公开(公告)日：2012-07-03
申请号：US13282494
申请日：2011-10-27
申请人： Takaharu Itani , Koji Matsuo , Kazuhiko Nakamura
发明人： Takaharu Itani , Koji Matsuo , Kazuhiko Nakamura
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L29/665 , H01L29/66575 , H01L29/78
摘要： A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.
摘要翻译：半导体器件制造方法在第一处理室中在第一压力下在惰性气氛中在第一加热温度下进行第一加热处理，以硅化源极 - 漏极扩散层的上部并形成硅化物膜; 在第二处理室中在第二压力的氧化气氛中在第二加热温度下进行第二加热处理，以选择性地氧化元件隔离绝缘膜上的金属膜的至少一个表面，并形成金属氧化物膜; 在第三处理室的气氛中，在高于第一加热温度和第二加热温度的第三加热温度下进行第三加热处理，以增加硅化物膜中硅的浓度; 并且在元件隔离绝缘膜上选择性地除去金属氧化物膜和金属膜的未反应部分。

3. 发明授权

US08124472B2 Manufacturing method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08124472B2
公开(公告)日：2012-02-28
申请号：US13205950
申请日：2011-08-09
申请人： Shinji Mori , Tsutomu Sato , Koji Matsuo
发明人： Shinji Mori , Tsutomu Sato , Koji Matsuo
IPC分类号： H01L29/78
CPC分类号： H01L29/772 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L29/66636 , H01L29/7848
摘要： A semiconductor device includes a first pMISFET region having an Si channel, a second pMISFET region having an Si channel and an nMISFET region having an Si channel. First SiGe layers which apply first compression strain to the Si channel are embedded and formed in the first pMISFET region to sandwich the Si channel thereof and second SiGe layers which apply second compression strain different from the first compression strain to the Si channel are embedded and formed in the second pMISFET region to sandwich the Si channel thereof.
摘要翻译：半导体器件包括具有Si沟道的第一pMISFET区，具有Si沟道的第二pMISFET区和具有Si沟道的nMISFET区。将第一压缩应变施加到Si沟道的第一SiGe层嵌入并形成在第一pMISFET区域中以夹持其Si沟道，并且将施加与第一压缩应变不同的第二压缩应变的第二SiGe层嵌入并形成在第二pMISFET区域夹持其Si通道。

4. 发明申请

US20120044972A1 TEMPERATURE SENSOR 有权
标题翻译：温度感应器
公开(公告)号：US20120044972A1
公开(公告)日：2012-02-23
申请号：US13213033
申请日：2011-08-18
申请人： Masamichi ITO , Koji MATSUO , Satoshi ISHIKAWA
发明人： Masamichi ITO , Koji MATSUO , Satoshi ISHIKAWA
IPC分类号： G01K7/00
CPC分类号： G01K1/08 , G01K1/16 , G01K7/16 , G01K2205/04
摘要： A temperature sensor (100) includes a heat-sensitive element (21) having a thermistor sintered-body (22), an insulating support (31), an insulation sheath (41) and a housing tube (11). The insulating support (31) is in contact with the rear end of the heat-sensitive element (21) and the insulation sheath (41) is in contact with the rear end of the insulating support (31). The housing tube (11) accommodates the heat-sensitive element (21), the insulating support (31) and the insulation sheath (41). The housing tube (11) includes a sheath accommodation portion (14) which accommodates the insulation sheath (41) and a distal accommodation portion (13). The distal accommodation portion (13) is located toward the distal end of the housing tube (11) with respect to the sheath accommodation portion (14), is smaller in outside diameter than the sheath accommodation portion (14), and accommodates at least half of the insulating support (31) as measured from the axially distal end of the insulating support (31).
摘要翻译：温度传感器（100）包括具有热敏电阻烧结体（22）的热敏元件（21），绝缘支架（31），绝缘护套（41）和外壳管（11）。绝缘支撑件（31）与热敏元件（21）的后端接触，并且绝缘护套（41）与绝缘支撑件（31）的后端接触。容纳管（11）容纳热敏元件（21），绝缘支撑件（31）和绝缘护套（41）。容纳管（11）包括容纳绝缘护套（41）和远端容纳部分（13）的护套容纳部分（14）。远侧容纳部（13）相对于护套容置部（14）朝向容纳管（11）的前端侧配置，比护套容纳部（14）的外径小，容纳至少一半的绝缘支撑件（31），其从绝缘支撑件（31）的轴向远端测量。

5. 发明申请

US20120040526A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20120040526A1
公开(公告)日：2012-02-16
申请号：US13282494
申请日：2011-10-27
申请人： Takaharu Itani , Koji Matsuo , Kazuhiko Nakamura
发明人： Takaharu Itani , Koji Matsuo , Kazuhiko Nakamura
IPC分类号： H01L21/3205
CPC分类号： H01L21/28518 , H01L29/665 , H01L29/66575 , H01L29/78
摘要： A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.
摘要翻译：半导体器件制造方法在第一处理室中在第一压力下在惰性气氛中在第一加热温度下进行第一加热处理，以硅化源极 - 漏极扩散层的上部并形成硅化物膜; 在第二处理室中在第二压力的氧化气氛中在第二加热温度下进行第二加热处理，以选择性地氧化元件隔离绝缘膜上的金属膜的至少一个表面，并形成金属氧化物膜; 在第三处理室的气氛中，在高于第一加热温度和第二加热温度的第三加热温度下进行第三加热处理，以增加硅化物膜中硅的浓度; 并且在元件隔离绝缘膜上选择性地除去金属氧化物膜和金属膜的未反应部分。

6. 发明授权

US08062973B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08062973B2
公开(公告)日：2011-11-22
申请号：US12693093
申请日：2010-01-25
申请人： Takaharu Itani , Koji Matsuo , Kazuhiko Nakamura
发明人： Takaharu Itani , Koji Matsuo , Kazuhiko Nakamura
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L29/665 , H01L29/66575 , H01L29/78
摘要： A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.
摘要翻译：半导体器件制造方法在第一处理室中在第一压力下在惰性气氛中在第一加热温度下进行第一加热处理，以硅化源极 - 漏极扩散层的上部并形成硅化物膜; 在第二处理室中在第二压力的氧化气氛中在第二加热温度下进行第二加热处理，以选择性地氧化元件隔离绝缘膜上的金属膜的至少一个表面，并形成金属氧化物膜; 在第三处理室的气氛中，在高于第一加热温度和第二加热温度的第三加热温度下进行第三加热处理，以增加硅化物膜中硅的浓度; 并且在元件隔离绝缘膜上选择性地除去金属氧化物膜和金属膜的未反应部分。

7. 发明授权

US06604802B2 Inkjet head and inkjet recording apparatus 失效
标题翻译：喷墨头和喷墨记录装置
公开(公告)号：US06604802B2
公开(公告)日：2003-08-12
申请号：US09877109
申请日：2001-06-11
申请人： Hideaki Horio , Koji Matsuo , Haruyuki Hatano , Yutaka Miyazono
发明人： Hideaki Horio , Koji Matsuo , Haruyuki Hatano , Yutaka Miyazono
IPC分类号： B41J2938
CPC分类号： B41J2/04578 , B41J2/0458 , B41J2/04581 , B41J2/04588 , B41J2/04596
摘要： An inkjet recording apparatus includes a moving device which moves an inkjet head relative to a recording medium. When the head is moved relative to the recording medium by the moving device, a nozzle of the head ejects ink onto the recording medium, so that recording is carried out. The inkjet head includes (a) pressure chambers containing ink, (b) nozzles communicating through the pressure chambers, (c) piezoelectric elements, (d) piezoelectric actuators that deform to increase or decrease the capacities of the pressure chambers due to piezoelectric effect of the piezoelectric elements, and (e) a controller for driving the actuators at a frequency not less than 20 kHz. This structure allows the actuators to operate substantially noiseless, and an image can be recorded at higher speed.
摘要翻译：喷墨记录装置包括使喷墨头相对于记录介质移动的移动装置。当头部通过移动装置相对于记录介质移动时，头部的喷嘴将墨水喷射到记录介质上，从而进行记录。喷墨头包括（a）包含油墨的压力室，（b）通过压力室连通的喷嘴，（c）压电元件，（d）由于压电腔的压电效应而使压力室的容量增大或减小的压电致动器压电元件，以及（e）用于以不小于20kHz的频率驱动致动器的控制器。这种结构允许致动器基本上无噪声地操作，并且可以以更高的速度记录图像。

8. 发明授权

US06450626B2 Ink jet head, method for producing the same, and ink jet type recording apparatus 失效
标题翻译：喷墨头，其制造方法和喷墨式记录装置
公开(公告)号：US06450626B2
公开(公告)日：2002-09-17
申请号：US09748770
申请日：2000-12-22
申请人： Koji Ikeda , Koji Matsuo
发明人： Koji Ikeda , Koji Matsuo
IPC分类号： B41J2045
CPC分类号： B41J2/161 , B41J2/14209 , B41J2/14233 , B41J2/1609 , B41J2/1623 , B41J2/1626 , B41J2/1646 , B41J2002/14225
摘要： In order to maximally improve the deformation characteristic of a piezoelectric actuator of an ink jet head so as to improve the printed image quality, the present invention newly provides expansion/contraction sections in the vicinity of a displacement section which is displaced in the thickness direction by the expansion/contraction in the planar direction of a piezoelectric layer in the piezoelectric actuator, wherein the expansion/contraction sections are expanded/contracted in the planar direction by the expansion/contraction of the piezoelectric layer in the planar direction, so that the displacement of the displacement section in the thickness direction is controlled by the expansion/contraction of the expansion/contraction section in the planar direction.
摘要翻译：为了最大限度地提高喷墨头的压电致动器的变形特性以提高印刷图像质量，本发明新近提供了在厚度方向上移位的位移部分附近的伸缩部分，压电致动器中的压电层的平面方向的膨胀/收缩，其中膨胀/收缩部通过压电层在平面方向上的膨胀/收缩在平面方向上膨胀/收缩，使得位移厚度方向上的位移部分通过膨胀/收缩部分在平面方向上的伸缩来控制。

9. 发明授权

US06339940B1 Synthetic quartz glass manufacturing process 有权
标题翻译：合成石英玻璃制造工艺
公开(公告)号：US06339940B1
公开(公告)日：2002-01-22
申请号：US09553392
申请日：2000-04-20
申请人： Motoyuki Yamada , Hisatoshi Otsuka , Koji Matsuo
发明人： Motoyuki Yamada , Hisatoshi Otsuka , Koji Matsuo
IPC分类号： C03B1906
CPC分类号： C03B37/0144 , C03B19/1407 , C03B19/1446
摘要： A process for manufacturing synthetic quartz glass involves feeding a quartz glass-forming raw material to a high-temperature gas zone within a chamber, converting the quartz glass-forming raw material into quartz soot, and forming synthetic quartz glass from the soot. A suspended soot-discharging gas which has been flow-straightened in a suspended soot discharging direction flows through the chamber in the vicinity of the high-temperature gas zone. This process keeps free suspended soot from settling onto the surface of the quartz ingot where fusion and growth take place, thereby preventing the formation of bubbles within the quartz glass under growth.
摘要翻译：制造合成石英玻璃的方法包括将石英玻璃形成原料进料到室内的高温气体区域，将石英玻璃形成原料转化成石英烟灰，并从烟灰形成合成石英玻璃。在悬浮烟炱排出方向上流动整流的悬浮的烟灰排出气体在高温气体区域附近流过室。该过程保持游离的悬浮烟灰沉降到熔融和生长发生的石英锭的表面上，从而防止石英玻璃生长过程中的气泡形成。

10. 发明授权

US06236381B1 Image display apparatus 失效
标题翻译：图像显示装置
公开(公告)号：US06236381B1
公开(公告)日：2001-05-22
申请号：US09198167
申请日：1998-11-23
申请人： Takatsugu Kurata , Michio Ohsugi , Hironari Taniguchi , Koji Matsuo , Kanji Imai
发明人： Takatsugu Kurata , Michio Ohsugi , Hironari Taniguchi , Koji Matsuo , Kanji Imai
IPC分类号： H01J3112
CPC分类号： H01J29/467 , H01J31/125
摘要： An image display apparatus comprises, in a vacuum container whose inside is kept under vacuum, a fluorescent layer, an electron emission source having a plurality of electron sources, a deflecting electrode to deflect electron beams emitted from the electron emission source, and an ultrafocusing electrode to focus the electron beams and land the focused electron beams on predetermined positions of the fluorescent layer. The ultrafocusing electrode is arranged between the electron emission source and the fluorescent layer while the deflecting electrode is arranged between the electron emission source and the ultrafocusing electrode, so that the fluorescent layer is illuminated by the electron beams. If the landing position of the electron beam is deviated because of errors such as manufacturing errors in assembling the components into the image display apparatus, the deviation is minimized and an image display apparatus with high resolution can be obtained.
摘要翻译：图像显示装置在内部保持真空的真空容器中包括荧光层，具有多个电子源的电子发射源，用于偏转从电子发射源发射的电子束的偏转电极和超聚焦电极聚焦电子束并将聚焦电子束落在荧光层的预定位置上。超聚焦电极设置在电子发射源和荧光层之间，而偏转电极设置在电子发射源和超聚焦电极之间，使得荧光层被电子束照射。如果电子束的着陆位置由于诸如将部件组装到图像显示装置中的制造误差等错误而偏移，则偏差最小化，并且可以获得高分辨率的图像显示装置。

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