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1. 发明申请

US20120044972A1 TEMPERATURE SENSOR 有权
标题翻译：温度感应器
公开(公告)号：US20120044972A1
公开(公告)日：2012-02-23
申请号：US13213033
申请日：2011-08-18
申请人： Masamichi ITO , Koji MATSUO , Satoshi ISHIKAWA
发明人： Masamichi ITO , Koji MATSUO , Satoshi ISHIKAWA
IPC分类号： G01K7/00
CPC分类号： G01K1/08 , G01K1/16 , G01K7/16 , G01K2205/04
摘要： A temperature sensor (100) includes a heat-sensitive element (21) having a thermistor sintered-body (22), an insulating support (31), an insulation sheath (41) and a housing tube (11). The insulating support (31) is in contact with the rear end of the heat-sensitive element (21) and the insulation sheath (41) is in contact with the rear end of the insulating support (31). The housing tube (11) accommodates the heat-sensitive element (21), the insulating support (31) and the insulation sheath (41). The housing tube (11) includes a sheath accommodation portion (14) which accommodates the insulation sheath (41) and a distal accommodation portion (13). The distal accommodation portion (13) is located toward the distal end of the housing tube (11) with respect to the sheath accommodation portion (14), is smaller in outside diameter than the sheath accommodation portion (14), and accommodates at least half of the insulating support (31) as measured from the axially distal end of the insulating support (31).
摘要翻译：温度传感器（100）包括具有热敏电阻烧结体（22）的热敏元件（21），绝缘支架（31），绝缘护套（41）和外壳管（11）。绝缘支撑件（31）与热敏元件（21）的后端接触，并且绝缘护套（41）与绝缘支撑件（31）的后端接触。容纳管（11）容纳热敏元件（21），绝缘支撑件（31）和绝缘护套（41）。容纳管（11）包括容纳绝缘护套（41）和远端容纳部分（13）的护套容纳部分（14）。远侧容纳部（13）相对于护套容置部（14）朝向容纳管（11）的前端侧配置，比护套容纳部（14）的外径小，容纳至少一半的绝缘支撑件（31），其从绝缘支撑件（31）的轴向远端测量。

2. 发明申请

US20120191437A1 METHOD FOR EXTRACTING IBIS SIMULATION MODEL 有权
标题翻译：提取IBIS模拟模型的方法
公开(公告)号：US20120191437A1
公开(公告)日：2012-07-26
申请号：US13354109
申请日：2012-01-19
申请人： Tadaaki YOSHIMURA , Yoji NISHIO , Sadahiro NONOYAMA , Koji MATSUO , Shinji ITANO , Yoshiyuki YAGAMI
发明人： Tadaaki YOSHIMURA , Yoji NISHIO , Sadahiro NONOYAMA , Koji MATSUO , Shinji ITANO , Yoshiyuki YAGAMI
IPC分类号： G06F17/50
CPC分类号： G06F3/0656 , G06F5/06 , G06F5/065 , G06F5/16 , G06F7/78 , G06F9/544 , G06F13/1673 , G06F17/50 , G06F17/5036 , G06F2003/0691 , G06F2205/062 , G06F2205/063 , G06F2205/066
摘要： A method for extracting an accurate IBIS simulation model of a semiconductor device including a plurality of semiconductor chips comprises: extracting an AC characteristics model of a first output buffer in an IBIS simulation model by treating first and second output buffers of first and second semiconductor chips connected to a single external connection terminal as a transistor model and executing a transistor-level circuit simulation; calculating an output capacitance model of the first output buffer as an IBIS simulation model by adding output capacitances of the first and second output buffers as a transistor-level circuit simulation model; and synthesizing an IBIS simulation model of the first output buffer viewed from the external connection terminal by using the AC characteristics model and the output capacitance model.
摘要翻译：一种用于提取包括多个半导体芯片的半导体器件的精确IBIS仿真模型的方法包括：通过处理连接的第一和第二半导体芯片的第一和第二输出缓冲器来提取IBIS仿真模型中的第一输出缓冲器的AC特征模型到单个外部连接端子作为晶体管模型并执行晶体管级电路仿真; 通过将第一和第二输出缓冲器的输出电容相加作为晶体管级电路仿真模型，计算第一输出缓冲器的输出电容模型作为IBIS仿真模型; 以及通过使用AC特性模型和输出电容模型，从外部连接端子合成第一输出缓冲器的IBIS仿真模型。

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