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    • 1. 发明申请
    • Magnetic connecting device
    • 磁连接装置
    • US20120295451A1
    • 2012-11-22
    • US13349850
    • 2012-01-13
    • Kim Hyun-JunYoun Dae-YoungJeong Seung-JuKim Jung GyoKim Hyo-Nam
    • Kim Hyun-JunYoun Dae-YoungJeong Seung-JuKim Jung GyoKim Hyo-Nam
    • H01R11/30
    • H01R13/6205
    • The present invention relates to a magnetic connecting device, which is magnetically and electrically coupled to an external device via a communication-type magnetic connector and is configured to transfer operating power to the external device after checking the external device using communication when the external device is coupled to the connecting device, thus ensuring convenience and safety in use. The magnetic connecting device includes a plurality of power terminals magnetically coupled to a connector of an external device and configured to transfer power to the external device, and at least one communication terminal arranged adjacent to the plurality of power terminals and configured to come into contact with the connector of the external device and to transmit or receive data when the external device is coupled.
    • 磁连接装置技术领域本发明涉及一种磁连接装置,其通过通信型磁性连接器磁耦合到外部装置,并且被配置为当外部装置是外部装置时使用通信检查外部装置之后将工作电力传送到外部装置 耦合到连接装置,从而确保使用方便和安全。 磁性连接装置包括多个电力端子,磁性地耦合到外部设备的连接器并且被配置为将功率传递到外部设备,以及至少一个通信终端,其布置成与多个电源端子相邻并被配置为与 外部设备的连接器,并且当外部设备耦合时发送或接收数据。
    • 2. 发明授权
    • Method to reduce capacitance between metal lines
    • 降低金属线之间电容的方法
    • US06403461B1
    • 2002-06-11
    • US09912606
    • 2001-07-25
    • Kim-Hyun TaeChok-Kho LiepChoi-Byoung Il
    • Kim-Hyun TaeChok-Kho LiepChoi-Byoung Il
    • H01L214763
    • H01L21/76807H01L21/7682H01L21/76885H01L23/5222H01L23/5329H01L2221/1026H01L2924/0002H01L2924/00
    • A process for reducing device capacitance via inclusion of an air gap in a low dielectric constant (low k), layer, used to fill narrow spaces between metal lines, has been developed. The process features the formation of dual damascene metal lines, comprised with a narrow space between the top portions of the dual damascene metal structures, and a wider space between bottom portions of these same structures. Deposition of a low k layer, using a deposition procedure lacking acceptable conformality properties, results in the narrow space between top portions of the dual damascene metal structures being completely filled with low k layer, while the wider space located between bottom portions of the metal structures remains unfilled. The unfilled portion of the low k layer now features an embedded air gap, resulting in decreased capacitance for the dielectric layer located between metal lines, thus reducing performance degrading RC delays.
    • 已经开发了用于通过包含用于填充金属线之间的狭窄空间的低介电常数(低k)层中的气隙来降低器件电容的工艺。 该方法的特征在于形成双镶嵌金属线,其包括在双镶嵌金属结构的顶部之间的狭窄空间以及这些相同结构的底部之间较宽的空间。 使用不具有可接受的共形特性的沉积程序沉积低k层导致双镶嵌金属结构的顶部之间的狭窄空间被完全填充低k层,而位于金属结构的底部之间的较宽空间 仍未填写 低k层的未填充部分现在具有嵌入的气隙,导致位于金属线之间的电介质层的电容降低,从而降低了RC延迟的性能。
    • 6. 发明申请
    • POWER TRANSMISSION APPARATUS AND IMAGE FORMING APPARATUS HAVING THE SAME
    • 电力传输装置和具有该装置的图像形成装置
    • US20090180808A1
    • 2009-07-16
    • US12252849
    • 2008-10-16
    • Kim Hyun-ho
    • Kim Hyun-ho
    • G03G15/06G03G15/00
    • G03G15/234G03G2215/00675Y10T74/19367
    • A power transmission apparatus and an image forming apparatus are provided. The a power transmission apparatus of transmitting driving power to first and second movable members includes: a driving unit which receives the driving power from a driving power source, and which rotates in forward and backward directions; a first driven unit which transmits the driving power to the first movable member; an elastic clutch which is provided between the driving unit and the first driven unit to selectively allow the driving power from the driving unit to be conveyed to the first driven unit based on the direction of the driving power; a second driven unit to convey the driving power to the second movable member regardless of the direction of the driving power so as to allow the second movable member to rotate bi-directionally. The first movable member may be, e.g., a photosensitive body. The second movable member may be, e.g., exit rollers for ejecting processed printing medium out of the image forming apparatus.
    • 提供电力传输装置和图像形成装置。 向第一和第二可移动部件传递驱动力的动力传递装置包括:驱动单元,其从驱动动力源接收驱动力并沿前后方向旋转; 第一驱动单元,其将驱动力传递到第一可动构件; 弹性离合器,设置在所述驱动单元和所述第一从动单元之间,以选择性地允许来自所述驱动单元的驱动力基于所述驱动力的方向被传送到所述第一从动单元; 第二从动单元,用于将驱动力传递到第二可动构件,而与驱动力的方向无关,以允许第二可动构件双向旋转。 第一可移动部件可以是例如感光体。 第二可动构件可以是例如用于将处理后的打印介质从图像形成装置中排出的出纸辊。
    • 8. 发明申请
    • CMOS image sensor and method for fabricating the same
    • CMOS图像传感器及其制造方法
    • US20060275944A1
    • 2006-12-07
    • US11446659
    • 2006-06-05
    • Kim Hyun
    • Kim Hyun
    • H01L21/00H01L27/10
    • H01L27/14625H01L27/14621H01L27/14645H01L27/14685H01L27/14689
    • A CMOS image sensor and a method of fabricating the same are provided. The CMOS image sensor can incorporate one or more photodiodes formed on a substrate at a regular interval, an interlayer insulating layer formed on the substrate; one or more trenches in the interlayer insulating layer at predetermined locations corresponding to the photodiodes, a color filter layer formed in each of the trenches; and at least one microlens corresponding to a color filter layer formed on the resulting substrate. The sensitivity of the CMOS image sensor is improved by reducing the thickness of the CMOS image sensor by forming the trenches in the interlayer insulating layer and forming the color filters in the trenches.
    • 提供CMOS图像传感器及其制造方法。 CMOS图像传感器可以以规则的间隔结合在基板上形成的一个或多个光电二极管,形成在基板上的层间绝缘层; 在对应于光电二极管的预定位置处的层间绝缘层中的一个或多个沟槽,形成在每个沟槽中的滤色器层; 以及对应于形成在所得基板上的滤色器层的至少一个微透镜。 通过在层间绝缘层中形成沟槽并在沟槽中形成滤色器来减小CMOS图像传感器的厚度来提高CMOS图像传感器的灵敏度。
    • 9. 发明授权
    • Pillar process for copper interconnect scheme
    • 铜互连方案的支柱工艺
    • US06350695B1
    • 2002-02-26
    • US09594414
    • 2000-06-16
    • Kim Hyun TaeKim Hock AngKiok Boone Elgin Quek
    • Kim Hyun TaeKim Hock AngKiok Boone Elgin Quek
    • H01L21311
    • H01L21/76885
    • A method for forming reliable inter-level metal interconnections in semiconductor integrated circuits is described where pillars are formed to connect between different metal layers. A first conductive layer is deposited overlying a substrate. A conductive etch stop layer is deposited overlying the first conductive layer and then patterned to form a mask for the fist conductive layer. This is followed by a deposition of via metal layer overlying the entire surface. A hard mask layer is deposited and patterned to form the mask where via pillars are to be formed. Subsequent anisotropic etching forms pillars in the via met layer and openings in the first conductive layer. An inter-metal dielectric (IMD) layer is deposited covering and filling both the openings in the first conductive layer and in between the via pillars. The surface is then planarized.
    • 描述了在半导体集成电路中形成可靠的层间金属互连的方法,其中形成支柱以在不同的金属层之间连接。 沉积在衬底上的第一导电层。 沉积覆盖在第一导电层上的导电蚀刻停止层,然后将其图案化以形成用于第一导电层的掩模。 之后是覆盖整个表面的通孔金属层的沉积。 沉积硬掩模层并图案化以形成要形成通孔柱的掩模。 随后的各向异性蚀刻在通孔结合层中形成柱状并在第一导电层中形成开口。 沉积金属间电介质(IMD)层,其覆盖并填充第一导电层中的开口和通孔之间的两个开口。 然后将表面平坦化。