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1. 发明授权

US08015967B2 Air-fuel ratio control apparatus 有权
标题翻译：空燃比控制装置
公开(公告)号：US08015967B2
公开(公告)日：2011-09-13
申请号：US12318116
申请日：2008-12-22
申请人： Hiroshi Morita , Kazuto Ikeda
发明人： Hiroshi Morita , Kazuto Ikeda
IPC分类号： F02D41/14 , F01L1/34
CPC分类号： F01L13/0015 , F01L1/185 , F01L2001/0537 , F01L2105/00 , F01L2800/00 , F01N2560/025 , F01N2560/14 , F02D13/023 , F02D41/0002 , F02D41/1454 , F02D41/2454 , F02D41/2464 , F02D2041/001 , Y02T10/18 , Y02T10/42
摘要： An air-fuel ratio control apparatus is applied to an internal combustion engine including a variable lift mechanism which changes a lift amount of an intake valve. An oxygen sensor, which outputs a signal indicating an oxygen concentration in exhaust gas, is provided downstream of an exhaust gas purification catalyst in an exhaust passage of the internal combustion engine. Air-fuel ratio control is performed to correct the fuel injection amount command value using the correction amount that is set based on the value output from the oxygen sensor. The relationship among the deviation of the correction amount from its reference value, the learned small lift value, the learned medium lift value, and the lift amount is learned. The learned deviation value is calculated based on the lift amount, using the learned relationship. Then, the fuel injection amount command value is corrected by the correction amount including the calculated learned deviation value.
摘要翻译：空燃比控制装置被应用于包括改变进气门的升程量的可变升程机构的内燃机。输出表示排气中的氧浓度的信号的氧传感器设置在内燃机的排气通路内的废气净化催化剂的下游。执行空燃比控制，以使用基于从氧传感器输出的值设定的校正量来校正燃料喷射量指令值。了解校正量与参考值的偏差，学习小升程值，学习介质升程值和提升量之间的关系。使用学习关系，根据提升量计算学习偏差值。然后，通过包括计算出的学习偏差值的校正量校正燃料喷射量指令值。

2. 发明授权

US07331316B2 Control apparatus and control method for internal combustion engine 失效
标题翻译：内燃机控制装置及控制方法
公开(公告)号：US07331316B2
公开(公告)日：2008-02-19
申请号：US11541565
申请日：2006-10-03
申请人： Kiyoo Hirose , Kazuto Ikeda , Hiroshi Morita
发明人： Kiyoo Hirose , Kazuto Ikeda , Hiroshi Morita
IPC分类号： F01L9/02
CPC分类号： F02D37/02 , F01L1/344 , F01L13/0015 , F01L2001/0537 , F01L2001/34483 , F01L2800/00 , F01L2800/01 , F02D13/0226 , F02D13/0261 , F02D41/0255 , F02D41/068 , F02D2013/0292 , F02D2041/001 , Y02T10/18 , Y02T10/26
摘要： If it is determined that an engine has been started, an engine coolant temperature is detected. If the engine coolant temperature is equal to or lower than a threshold value, the catalyst quick warm-up control is started to retard ignition timing, and a signal indicating a command to increase an operate angle is transmitted to a VVLA controller. When a VVT hydraulic pressure is increased to a predetermined value, a signal indicating a command to decrease the operate angle is transmitted to the VVLA controller, and a signal indicating a command to advance open timing of an intake valve is transmitted to a VVT controller so that the open timing of the intake valve is not changed. If the engine coolant temperature is equal to or higher than a threshold value, the catalyst quick warm-up control ends, and the ignition timing is returned to normal timing.
摘要翻译：如果确定发动机已经起动，则检测发动机冷却剂温度。如果发动机冷却剂温度等于或低于阈值，则启动催化剂快速预热控制以延迟点火正时，并且将指示增加操作角度的指令的信号发送到VVLA控制器。当VVT液压增加到预定值时，向VVLA控制器发送指示降低操作角度的指令的信号，并且将指示进气门打开正时的命令的信号传送到VVT控制器进气阀的打开正时不变。如果发动机冷却剂温度等于或高于阈值，则催化剂快速预热控制结束，点火正时恢复正常。

3. 发明申请

US20060220143A1 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20060220143A1
公开(公告)日：2006-10-05
申请号：US11189816
申请日：2005-07-27
申请人： Kazuto Ikeda
发明人： Kazuto Ikeda
IPC分类号： H01L29/45
CPC分类号： H01L21/823462 , H01L21/823481
摘要： Patterning is performed in such a manner that an end portion fabricated of a second gate insulating film partially overlaps an end portion fabricated of a first gate insulating film. Then, a surface recovery treatment is performed in the aforementioned state where the first and second gate insulating films partially overlap each other.
摘要翻译：进行图案化，使得由第二栅极绝缘膜制成的端部与由第一栅极绝缘膜制成的端部部分重叠。然后，在第一和第二栅极绝缘膜部分重叠的上述状态下进行表面恢复处理。

4. 发明申请

US20060172498A1 Semiconductor device having high dielectric constant gate insulating layer and its manufacture method 有权
标题翻译：具有高介电常数栅极绝缘层的半导体器件及其制造方法
公开(公告)号：US20060172498A1
公开(公告)日：2006-08-03
申请号：US11148317
申请日：2005-06-09
申请人： Masaomi Yamaguchi , Hiroshi Minakata , Tsunehisa Sakoda , Kazuto Ikeda
发明人： Masaomi Yamaguchi , Hiroshi Minakata , Tsunehisa Sakoda , Kazuto Ikeda
IPC分类号： H01L21/336 , H01L21/8238 , H01L21/8234 , H01L21/3205
CPC分类号： H01L29/517 , H01L21/28185 , H01L21/28194 , H01L21/823857 , H01L29/513
摘要： A semiconductor device manufacture method has the steps of: (a) forming an interface layer of SiO or SiON on the surface of an active region of a silicon substrate; (b) forming a high dielectric constant gate insulating film such as HfSiON having a dielectric constant higher than that of silicon oxide, above the interface layer; (c) forming a gate electrode of polysilicon above the high dielectric constant gate insulating film; (d) passivating the substrate surface at least before or after the high dielectric constant gate insulating film is formed; (e) forming an insulated gate electrode structure by patterning at least the gate electrode and the high dielectric constant gate insulating film; and (f) forming source/drain regions in the active region on both sides of the insulated gate electrode structure. The semiconductor device has the high dielectric constant insulating film having a dielectric constant higher than that of silicon oxide.
摘要翻译：半导体器件制造方法具有以下步骤：（a）在硅衬底的有源区的表面上形成SiO或SiON的界面层; （b）在界面层之上形成介电常数高于氧化硅的介电常数的诸如HfSiON的高介电常数栅极绝缘膜; （c）在高介电常数栅极绝缘膜上方形成多晶硅栅电极; （d）至少在形成高介电常数栅极绝缘膜之前或之后使基板表面钝化; （e）通过至少构图栅电极和高介电常数栅极绝缘膜来形成绝缘栅电极结构; 和（f）在绝缘栅电极结构两侧的有源区中形成源/漏区。半导体器件具有介电常数比氧化硅高的介电常数绝缘膜。

5. 发明授权

US07011734B2 Method of manufacturing semiconductor device having silicide layer 有权
标题翻译：制造具有硅化物层的半导体器件的方法
公开(公告)号：US07011734B2
公开(公告)日：2006-03-14
申请号：US10685796
申请日：2003-10-16
申请人： Kazuto Ikeda
发明人： Kazuto Ikeda
IPC分类号： C23C14/34 , H01L21/336 , B05D3/02
CPC分类号： H01L21/28518
摘要： A method of manufacturing a semiconductor device has the steps of: (a) evacuating a sputtering chamber to a pressure of 1.5×10−8 torr to 9×10−8 torr and heating a silicon substrate to a temperature of 330° C. to 395° C.; (b) sputtering Co on the heated silicon substrate; (c) after the step (b), forming a cap layer having a small oxygen transmission performance on the silicon substrate without exposing the silicon substrate in air; (d) after the step (c), performing primary annealing; (e) after the step (d), removing the cap layer and unreacted Co; and (f) after the step (e), performing secondary annealing by heating the silicon substrate to a temperature of 450° C. to 750° C.
摘要翻译：制造半导体器件的方法具有以下步骤：（a）将溅射室抽空至1.5×10 -8乇至9×10 -8乇的压力，并加热硅衬底，温度为330℃至395℃。（b）在加热的硅衬底上溅射Co; （c）在步骤（b）之后，在硅衬底上形成具有小氧传输性能的覆盖层，而不在硅衬底中暴露空气; （d）在步骤（c）之后进行一次退火; （e）在步骤（d）之后，除去盖层和未反应的Co; 和（f）在步骤（e）之后，通过将硅衬底加热至450℃至750℃的温度进行二次退火。

6. 发明授权

US07893508B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07893508B2
公开(公告)日：2011-02-22
申请号：US11518317
申请日：2006-09-11
申请人： Tsunehisa Sakoda , Kazuto Ikeda
发明人： Tsunehisa Sakoda , Kazuto Ikeda
IPC分类号： H01L29/94
CPC分类号： H01L29/513 , H01L21/28194 , H01L21/28202 , H01L29/517
摘要： A semiconductor device capable of suppressing a threshold shift and a manufacturing method of the semiconductor device. On a high dielectric constant insulating film, a diffusion barrier film for preventing the diffusion of metal elements from the high dielectric constant insulating film to an upper layer is formed. Therefore, the diffusion of the metal elements from the high dielectric constant insulating film to the upper layer can be prevented. As a result, a reaction and bonding between the metal elements and a Si element in a gate electrode can be suppressed near a boundary between an insulating film and the gate electrode.
摘要翻译：能够抑制阈值偏移的半导体器件和半导体器件的制造方法。在高介电常数绝缘膜上形成用于防止金属元素从高介电常数绝缘膜向上层扩散的扩散阻挡膜。因此，可以防止金属元素从高介电常数绝缘膜扩散到上层。结果，可以在绝缘膜和栅电极之间的边界附近抑制金属元件与栅电极中的Si元素之间的反应和接合。

7. 发明授权

US07838439B2 Method of manufacturing an insulating film containing hafnium 失效
标题翻译：制造含有铪的绝缘膜的方法
公开(公告)号：US07838439B2
公开(公告)日：2010-11-23
申请号：US12146835
申请日：2008-06-26
申请人： Masaharu Oshima , Haruhiko Takahashi , Koji Usuda , Ziyuan Liu , Liu Guo-lin , Kazuto Ikeda , Masaki Yoshimaru
发明人： Masaharu Oshima , Haruhiko Takahashi , Koji Usuda , Ziyuan Liu , Liu Guo-lin , Kazuto Ikeda , Masaki Yoshimaru
IPC分类号： H01L21/31 , H01L21/469 , H01L21/336
CPC分类号： H01L21/28176 , H01L21/28035 , H01L29/513 , H01L29/517
摘要： A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.
摘要翻译：层叠膜具有在硅层上形成的含有铪的绝缘膜和形成在绝缘膜上的多晶硅层。层叠的膜在含氧和氮气的气氛中加热，其总压力近似等于氮的分压。

8. 发明申请

US20060037185A1 Method of assembling motor vehicle body 失效
标题翻译：机动车身组装方法
公开(公告)号：US20060037185A1
公开(公告)日：2006-02-23
申请号：US10532462
申请日：2003-10-17
申请人： Shinobu Inoue , Masaharu Saito , Akiyoshi Hazama , Yasuhiro Hosokawa , takuma Arai , Isao Kita , Takuji Izutani , Kazuto Ikeda
发明人： Shinobu Inoue , Masaharu Saito , Akiyoshi Hazama , Yasuhiro Hosokawa , takuma Arai , Isao Kita , Takuji Izutani , Kazuto Ikeda
IPC分类号： B23P11/00
CPC分类号： B62D65/02 , B62D65/18 , Y10T29/49826 , Y10T29/49828 , Y10T29/49829 , Y10T29/49831 , Y10T29/49895 , Y10T29/53961
摘要： A roof panel (31) is pre-set on the left and right side members (4) fixed to an underbody of a car. A roof panel spot welding station (7) includes a pair of frames (34) and two joisted-locating jigs (35, 36) bridging the frames. Each of the joisted-locating jigs is furnished with a clamp mechanism for holding the roof panel. The roof panel is located to the side members by the locating jigs, and spot-welded to the side members.
摘要翻译：顶板（31）被预先安装在固定在汽车底部上的左侧和右侧部件（4）上。顶板点焊站（7）包括一对框架（34）和两个桥接定位夹具（35,36），桥接框架。每个托梁定位夹具都配备有用于固定屋顶板的夹紧机构。屋顶面板通过定位夹具位于侧面构件上，并点焊到侧面构件。

9. 发明申请

US20090118987A1 Air-fuel ratio control apparatus 有权
公开(公告)号：US20090118987A1
公开(公告)日：2009-05-07
申请号：US12318116
申请日：2008-12-22
申请人： Hiroshi Morita , Kazuto Ikeda
发明人： Hiroshi Morita , Kazuto Ikeda
IPC分类号： F02D41/30
CPC分类号： F01L13/0015 , F01L1/185 , F01L2001/0537 , F01L2105/00 , F01L2800/00 , F01N2560/025 , F01N2560/14 , F02D13/023 , F02D41/0002 , F02D41/1454 , F02D41/2454 , F02D41/2464 , F02D2041/001 , Y02T10/18 , Y02T10/42
摘要： An air-fuel ratio control apparatus is applied to an internal combustion engine including a variable lift mechanism which changes a lift amount of an intake valve. An oxygen sensor, which outputs a signal indicating an oxygen concentration in exhaust gas, is provided downstream of an exhaust gas purification catalyst in an exhaust passage of the internal combustion engine. Air-fuel ratio control is performed to correct the fuel injection amount command value using the correction amount that is set based on the value output from the oxygen sensor. The relationship among the deviation of the correction amount from its reference value, the learned small lift value, the learned medium lift value, and the lift amount is learned. The learned deviation value is calculated based on the lift amount, using the learned relationship. Then, the fuel injection amount command value is corrected by the correction amount including the calculated learned deviation value.

10. 发明授权

US07498541B2 Method of assembling motor vehicle body 失效
标题翻译：机动车身组装方法
公开(公告)号：US07498541B2
公开(公告)日：2009-03-03
申请号：US10532440
申请日：2003-10-17
申请人： Shinobu Inoue , Masaharu Saito , Akiyoshi Hazama , Yasuhiro Hosokawa , Takuma Arai , Isao Kita , Takuji Izutani , Kazuto Ikeda
发明人： Shinobu Inoue , Masaharu Saito , Akiyoshi Hazama , Yasuhiro Hosokawa , Takuma Arai , Isao Kita , Takuji Izutani , Kazuto Ikeda
IPC分类号： B23K37/04
CPC分类号： B62D65/02 , B23P2700/50 , B62D65/04 , B62D65/18 , Y10T29/49826 , Y10T29/49828 , Y10T29/49829
摘要： Each of a pair of side members (4) is located relative to an underbody (3) using two locators (16). Each locator is lowered by a lifter (15) and placed on a slide base (18). The slide base is movable along a slide guide (17) toward and away from a transfer conveyor (11).
摘要翻译：一对侧构件（4）中的每一个使用两个定位器（16）相对于底体（3）定位。每个定位器由升降机（15）降下并放置在滑动基座（18）上。滑动基座可以沿着滑动引导件（17）朝向和远离传送输送器（11）移动。

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