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    • 2. 发明申请
    • PEAK HOLD CIRCUIT
    • 峰值保持电路
    • US20090322379A1
    • 2009-12-31
    • US12483579
    • 2009-06-12
    • Kazuhiro TOMITA
    • Kazuhiro TOMITA
    • H03K5/153
    • H03K5/1532G11B7/1263
    • A peak hold circuit includes an input transistor, which is provided with an input signal, and a first hold capacitor, which holds a maximum or minimum value of the input signal. A correction circuit, which corrects the hold voltage held by the first hold capacitor, includes an operational amplifier, which is supplied with the hold voltage, and a correction transistor, which is provided with an output signal of the operational amplifier. A source/emitter of the correction transistor is coupled to the operational amplifier. The peak hold circuit also includes a current detection circuit, which detects current flowing to the input transistor, and a peak current hold circuit, which holds the peak value of the current detected by the current detection circuit as a peak current and supplies the peak current to the correction transistor.
    • 峰值保持电路包括具有输入信号的输入晶体管和保持输入信号的最大值或最小值的第一保持电容器。 校正由第一保持电容器保持的保持电压的校正电路包括被提供有保持电压的运算放大器和设置有运算放大器的输出信号的校正晶体管。 校正晶体管的源极/发射极耦合到运算放大器。 峰值保持电路还包括检测流向输入晶体管的电流的电流检测电路和将电流检测电路检测到的电流的峰值保持为峰值电流的峰值电流保持电路,并提供峰值电流 到校正晶体管。
    • 3. 发明授权
    • Semiconductor device and receiver
    • 半导体器件和接收器
    • US07120416B2
    • 2006-10-10
    • US10625569
    • 2003-07-24
    • Kazuhiro Tomita
    • Kazuhiro Tomita
    • H04B1/10
    • H03J3/08H03J7/065
    • A semiconductor device for demodulating a received signal in a satisfactory manner when the frequency of the received signal deviates. The semiconductor device is used in a receiver having a reference oscillator. The semiconductor device includes a local oscillator, a PLL controller, and a comparator. The local oscillator generates a local signal having a local frequency. The PLL controller controls the local frequency in accordance with a reference signal of the reference oscillator. The comparator compares the frequency of the received signal with the frequency of the reference signal or the phase of the received signal with the phase of the reference signal to generate an error signal for correcting the local frequency in accordance with the comparison.
    • 一种用于当接收信号的频率偏离时以令人满意的方式解调接收信号的半导体器件。 半导体器件用于具有参考振荡器的接收机中。 半导体器件包括本地振荡器,PLL控制器和比较器。 本地振荡器产生具有本地频率的本地信号。 PLL控制器根据参考振荡器的参考信号控制本地频率。 比较器将接收信号的频率与参考信号的频率或接收信号的相位与参考信号的相位进行比较,以根据比较生成用于校正本地频率的误差信号。
    • 4. 发明申请
    • OUTPUT CIRCUIT OF HIGH-FREQUENCY TRANSMITTER
    • 高频发射机的输出电路
    • US20100330933A1
    • 2010-12-30
    • US12822651
    • 2010-06-24
    • Kazuhiro TOMITA
    • Kazuhiro TOMITA
    • H04B1/40
    • H04L27/32
    • A transmitting and receiving device includes: a transmission circuit that transmits a signal by FM-modulating a carrier wave of the signal; an FM demodulation circuit that generates a demodulation signal by FM-demodulating the received signal; and a first filter circuit that changes a pass-band for letting the received signal pass through according to the demodulation signal, wherein the transmitting and receiving device perform a power supply line communication through the power supply line in which a signal is transmitted and received among a plurality of the transmitting and receiving devices.
    • 发送和接收设备包括:发送电路,通过对信号的载波进行FM调制来发送信号; FM解调电路,通过对所接收的信号进行FM解调来产生解调信号; 以及第一滤波器电路,其根据解调信号改变使接收信号通过的通带,其中发送和接收装置通过其中发送和接收信号的电源线执行电源线通信, 多个发送和接收设备。
    • 6. 发明授权
    • MOS type variable capacitance device
    • MOS型可变电容器件
    • US07622760B2
    • 2009-11-24
    • US11047559
    • 2005-02-02
    • Takaoki OgawaKazuhiro TomitaKoju Aoki
    • Takaoki OgawaKazuhiro TomitaKoju Aoki
    • H01L27/12
    • H01L29/0684H01L27/0808H01L29/42312H01L29/93H01L29/94
    • An n-well is formed in a p-type semiconductor substrate. A gate insulative film is formed to the p-type semiconductor substrate and the n-well, and a gate electrode is formed on the gate insulative film. A source layer selectively diffused with n-type impurities at high concentration is formed adjacent to the gate insulative film on the surface of the p-type semiconductor substrate, the n-well and a region extending on both of them. Further, a contact layer selectively diffused with p-type impurities at high concentration is formed being spaced from the source layer. A capacitance characteristic of good linearity over a wide range relative to the inter-terminal voltage VT can be obtained by applying an inter-terminal voltage VT between the source layer and the gate electrode. A MOS type variable capacitance device capable of obtaining a characteristic of good linearity for a wide range relative to the inter-terminal voltage VT and capable of coping with the improvement of the performance of a VCO circuit, etc., as well as simple in the structure, and capable of being manufactured easily with no requirement for addition of masks and steps can be provided.
    • 在p型半导体衬底中形成n阱。 对p型半导体衬底和n阱形成栅极绝缘膜,并且在栅极绝缘膜上形成栅电极。 与p型半导体衬底的表面上的栅极绝缘膜相邻地形成与n型杂质高浓度选择性扩散的源极层,n阱以及在其上延伸的区域。 此外,形成与源极层间隔开的与高浓度的p型杂质选择性扩散的接触层。 通过在源极层和栅电极之间施加端子间电压VT,可以获得相对于端子间电压VT在宽范围内具有良好线性度的电容特性。 一种MOS型可变电容器件,其能够获得相对于端子间电压VT的宽范围的良好线性特性,并且能够应对VCO电路的性能的提高等,以及简单的 结构,并且能够容易地制造,而不需要添加掩模和步骤。
    • 7. 发明授权
    • Sensor control circuit
    • 传感器控制电路
    • US07363190B2
    • 2008-04-22
    • US11723252
    • 2007-03-19
    • Kazuhiro YamashitaKazuhiro Tomita
    • Kazuhiro YamashitaKazuhiro Tomita
    • G06F19/00
    • G01P15/0891G01P15/18G11B19/04
    • A sensor control circuit includes an acceleration sensor which detects acceleration and generates a detection signal. The sensor control circuit also includes a processing section which generates a calculation result by calculating the acceleration in accordance with the detection signal, and generates an interrupt notification. The sensor control circuit also includes an interrupt output circuit. The interrupt output circuit has a threshold value determination section which generates a detection result by determining a change condition. The change condition is determined by comparing the calculation result with the threshold value. The interrupt output circuit also has a plurality of INT terminals and a selection section. The selection section selects the detection result or the interruption notification in accordance with mode information which is set from a host CPU and sends the selected signal from the INT terminal through the associated INT terminal.
    • 传感器控制电路包括检测加速度并产生检测信号的加速度传感器。 传感器控制电路还包括处理部,其通过根据检测信号计算加速度来生成计算结果,并生成中断通知。 传感器控制电路还包括一个中断输出电路。 中断输出电路具有阈值确定部分,其通过确定改变状况来产生检测结果。 通过将计算结果与阈值进行比较来确定变化条件。 中断输出电路还具有多个INT端子和选择部分。 选择部分根据从主机CPU设置的模式信息来选择检测结果或中断通知,并通过相关联的INT端口从INT终端发送所选择的信号。
    • 8. 发明申请
    • Phase shift circuit and phase correcting method
    • 相移电路和相位校正方法
    • US20070075805A1
    • 2007-04-05
    • US11602320
    • 2006-11-21
    • Kazuhiro Tomita
    • Kazuhiro Tomita
    • H01P9/00
    • H03H7/21
    • A phase shift circuit includes a 45° phase corrector that performs vector synthesis of signals supposed to have a 45° phase difference, out of a plurality of sets of orthogonal phase signals having an about 45° phase difference and an equal amplitude, the orthogonal phase signals in each set having undergone 90° phase correction, and outputs signals resulting from the vector synthesis, whereby a phase error between the orthogonal phase signals in the different sets is eliminated by the vector synthesis to make it possible to correct their phase difference to accurately 45°.
    • 相移电路包括:45°相位校正器,其在具有约45°相位差和相等振幅的多组正交相位信号中执行假设具有45°相位差的信号的矢量合成,正交相位 每个组中的信号经过90°相位校正,并且输出由矢量合成产生的信号,由此通过矢量合成消除了不同组中的正交相位信号之间的相位误差,使得可以将它们的相位差精确地校正 45°。
    • 9. 发明申请
    • Mos type variable capacitance device
    • Mos型可变电容器件
    • US20050127411A1
    • 2005-06-16
    • US11047559
    • 2005-02-02
    • Takaoki OgawaKazuhiro TomitaKoju Aoki
    • Takaoki OgawaKazuhiro TomitaKoju Aoki
    • H01L27/08H01L29/93H01L29/94H01L29/76
    • H01L29/0684H01L27/0808H01L29/42312H01L29/93H01L29/94
    • An n-well is formed in a p-type semiconductor substrate. A gate insulative film is formed to the p-type semiconductor substrate and the n-well, and a gate electrode is formed on the gate insulative film. A source layer selectively diffused with n-type impurities at high concentration is formed adjacent to the gate insulative film on the surface of the p-type semiconductor substrate, the n-well and a region extending on both of them. Further, a contact layer selectively diffused with p-type impurities at high concentration is formed being spaced from the source layer. A capacitance characteristic of good linearity over a wide range relative to the inter-terminal voltage VT can be obtained by applying an inter-terminal voltage VT between the source layer and the gate electrode. A MOS type variable capacitance device capable of obtaining a characteristic of good linearity for a wide range relative to the inter-terminal voltage VT and capable of coping with the improvement of the performance of a VCO circuit, etc., as well as simple in the structure, and capable of being manufactured easily with no requirement for addition of masks and steps can be provided.
    • 在p型半导体衬底中形成n阱。 对p型半导体衬底和n阱形成栅极绝缘膜,并且在栅极绝缘膜上形成栅电极。 与p型半导体衬底的表面上的栅极绝缘膜相邻地形成与n型杂质高浓度选择性扩散的源极层,n阱以及在其上延伸的区域。 此外,形成与源极层间隔开的与高浓度的p型杂质选择性扩散的接触层。 通过在源极层和栅电极之间施加端子间电压VT,可以获得相对于端子间电压VT在宽范围内具有良好线性度的电容特性。 一种MOS型可变电容器件,其能够获得相对于端子间电压VT的宽范围的良好线性特性,并且能够应对VCO电路的性能的提高等,以及简单的 结构,并且能够容易地制造,而不需要添加掩模和步骤。