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1. 发明申请

US20140193977A1 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS 有权
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US20140193977A1
公开(公告)日：2014-07-10
申请号：US14238552
申请日：2012-08-28
申请人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
发明人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
IPC分类号： H01L21/67 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32449 , H01L21/3065 , H01L21/31116 , H01L21/67109 , H01L21/67248 , H01L21/6831
摘要： A plasma etching apparatus includes a processing chamber; a holding unit for holding the substrate within the processing chamber; an electrode plate facing the holding unit; a plurality of supply parts arranged at different radial positions with respect to the substrate for supplying processing gas to a space between the holding unit and the electrode plate; a high frequency power supply that supplies high frequency power to the holding unit and/or the electrode plate to convert the processing gas supplied to the space into plasma; an adjustment unit that adjusts a supply condition for each of the supply parts; and a control unit that controls the adjustment unit to vary the supply condition between a position where an effect of diffusion of processing gas on an active species concentration distribution at the substrate is dominant and a position where an effect of flow of the processing gas is dominant.
摘要翻译：等离子体蚀刻装置包括处理室; 保持单元，用于将基板保持在处理室内; 面对所述保持单元的电极板; 多个供给部件，其布置在相对于所述基板的不同径向位置处，用于将处理气体供应到所述保持单元和所述电极板之间的空间; 高频电源，其向所述保持单元和/或所述电极板提供高频电力，以将供应到所述空间的处理气体转换为等离子体; 调整单元，调整各供给部的供给条件; 以及控制单元，其控制所述调整单元改变处理气体的扩散对所述基板的活性种类浓度分布的影响为主的位置与所述处理气体的流动的影响为主的位置之间的供给条件。

2. 发明授权

US08187981B2 Substrate processing method, substrate processing system, and computer-readable storage medium 有权
标题翻译：基板处理方法，基板处理系统和计算机可读存储介质
公开(公告)号：US08187981B2
公开(公告)日：2012-05-29
申请号：US11870641
申请日：2007-10-11
申请人： Kazuhiro Tomioka , Nobuyoshi Kobayashi , Isamu Sakuragi , Kazuhiro Kubota
发明人： Kazuhiro Tomioka , Nobuyoshi Kobayashi , Isamu Sakuragi , Kazuhiro Kubota
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/31058 , H01L21/76814 , H01L21/76831
摘要： A substrate processing method includes preparing a substrate having a low-k interlayer dielectric film as a to-be-etched film and a photoresist film, formed on the low-k interlayer insulating film, serving as an etching mask with a predetermined circuit pattern; etching the low-k interlayer insulating film through the photoresist film to form grooves and/or holes in the low-k interlayer insulating film; ashing the photoresist film by using hydrogen radicals generated by bring a hydrogen-containing gas into contact with a catalyst of a high temperature; and recovering damage to the low-k interlayer insulating film due to the ashing by supplying a specific recovery gas. The method further includes recovering damage to the low-k interlayer insulating film due to the etching by supplying a specific recovery gas.
摘要翻译：基板处理方法包括：在低k层间绝缘膜上形成具有预定电路图案的蚀刻掩模的低k层间绝缘膜作为被蚀刻膜和光致抗蚀剂膜的基板; 通过光致抗蚀剂膜蚀刻低k层间绝缘膜，以在低k层间绝缘膜中形成凹槽和/或孔; 使用通过使含氢气体与高温催化剂接触而产生的氢自由基来使光致抗蚀剂膜发生灰化; 并且通过供给特定的回收气体，由于灰化而恢复对低k层间绝缘膜的损坏。该方法还包括通过提供特定的回收气体来回收由于蚀刻而导致的低k层间绝缘膜的损坏。

3. 发明申请

US20120000886A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20120000886A1
公开(公告)日：2012-01-05
申请号：US13175096
申请日：2011-07-01
申请人： Masanobu HONDA , Kazuhiro KUBOTA , Yoshinobu OOYA , Masaru NISHINO
发明人： Masanobu HONDA , Kazuhiro KUBOTA , Yoshinobu OOYA , Masaru NISHINO
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01L21/6719 , H01J37/18 , H01J37/32091 , H01J37/32633 , H01J37/32834 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144
摘要： The substrate processing apparatus includes a process chamber which accommodates a wafer and performs a plasma etching process on the wafer, an exhaust chamber which communicates with the process chamber, an exhaust plate which divides the process chamber from the exhaust chamber and prevents plasma inside the process chamber from leaking into the exhaust chamber, and an upper electrode plate arranged inside the exhaust chamber, wherein the exhaust plate includes a plurality of through holes, and the upper electrode plate includes a plurality of through holes, is capable of contacting the exhaust plate in parallel, and is capable of being spaced apart from the exhaust plate.
摘要翻译：基板处理装置包括处理室，其容纳晶片并对晶片进行等离子体蚀刻处理，与处理室连通的排气室，将处理室与排气室分隔开的排气板，防止处理过程中的等离子体所述排气板包括多个通孔，所述上电极板包括多个通孔，所述多个通孔能够将所述排气板与所述排气室接触，并且能够与排气板间隔开。

4. 发明申请

US20080083500A1 METHOD FOR DETECTING AN END POINT OF RESIST PEELING, METHOD AND APPARATUS FOR PEELING RESIST, AND COMPUTER-READABLE STORAGE MEDIUM 有权
标题翻译：用于检测耐腐蚀端点的方法，用于剥离电阻的方法和装置以及计算机可读存储介质
公开(公告)号：US20080083500A1
公开(公告)日：2008-04-10
申请号：US11868045
申请日：2007-10-05
申请人： Isamu SAKURAGI , Kazuhiro Kubota
发明人： Isamu SAKURAGI , Kazuhiro Kubota
IPC分类号： B29C63/00
CPC分类号： H01L21/31138 , G03F7/42 , G03F7/427 , H01J37/32963 , H01L22/26 , H01L2924/0002 , Y10T156/1105 , Y10T156/1906 , H01L2924/00
摘要： A method for detecting an end point of a resist peeling process in which a resist is gasified to be peeled off by producing hydrogen radicals by catalytic cracking reaction where a hydrogen-containing gas contacts with a high-temperature catalyst, and contacting the produced hydrogen radicals with a resist on a substrate, includes monitoring one or more parameters indicating a state of the catalyst and detecting the end point of the resist peeling process based on variations of the monitored parameters. The hydrogen-containing gas may be a H2 gas. The parameters indicating the state of the catalyst may be one or more electrical parameters when a power is supplied to the catalyst. Further, the catalyst may be a filament made of a high melting point metal.
摘要翻译：一种用于检测抗蚀剂剥离过程的终点的方法，其中通过催化裂化反应在其中含氢气体与高温催化剂接触的同时通过产生氢自由基来将抗蚀剂气化以被剥离，并使所产生的氢原子在基板上具有抗蚀剂，包括监测指示催化剂状态的一个或多个参数，并且基于监测参数的变化检测抗蚀剂剥离过程的终点。含氢气体可以是H 2气体。指示催化剂状态的参数可以是当向催化剂供电时的一个或多个电参数。此外，催化剂可以是由高熔点金属制成的长丝。

5. 发明授权

US07328518B2 Surface roughness/contour shape measuring apparatus 有权
标题翻译：表面粗糙度/轮廓形状测量装置
公开(公告)号：US07328518B2
公开(公告)日：2008-02-12
申请号：US11228442
申请日：2005-09-15
申请人： Nobuyuki Taniuchi , Kazuhiro Kubota
发明人： Nobuyuki Taniuchi , Kazuhiro Kubota
IPC分类号： G01B5/20
CPC分类号： G01B5/28
摘要： The present invention provides a surface roughness/contour shape measuring apparatus that can move a probe relative to a workpiece within an orthogonal X-Y plane while employing a relatively inexpensive construction. In the surface roughness/contour shape measuring apparatus (1), the probe (6, 7) and a driving unit (4) for driving the probe (6, 7) in one predesignated direction are connected together by a connecting member (8) capable of moving the probe (6, 7) in one predesignated direction relative to the driving unit (4).
摘要翻译：本发明提供了一种表面粗糙度/轮廓形状测量装置，其能够在使用相对便宜的结构的同时在正交X-Y平面内相对于工件移动探针。在表面粗糙度/轮廓形状测量装置（1）中，通过连接构件（8）将探针（6,7）和驱动单元（4）以一个预先指定的方向驱动探针（6,7）能够以相对于驱动单元（4）的一个预先指定的方向移动探针（6,7）。

6. 发明申请

US20070232076A1 Method of repairing damaged film having low dielectric constant, semiconductor device fabricating system and storage medium 有权
标题翻译：修复具有低介电常数的损伤膜的方法，半导体器件制造系统和存储介质
公开(公告)号：US20070232076A1
公开(公告)日：2007-10-04
申请号：US11727392
申请日：2007-03-26
申请人： Masaru Hori , Kazuhiro Kubota
发明人： Masaru Hori , Kazuhiro Kubota
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , H01L21/31116 , H01L21/31138 , H01L21/76814
摘要： A damaged layer repairing method repairs a damaged layer formed in a surface of a SiOCH film having a low dielectric constant film, containing silicon, carbon, oxygen and hydrogen and formed on a substrate through the elimination of carbon atoms by the decarbonizing effect of plasmas used in an etching process and an ashing process. CH3 radicals are produced through the thermal decomposition of C8H18O2 gas represented by a structural formula: (CH3)3COOH(CH3)3. CH3 radicals are brought into contact with the damaged layer in the SiOCH film and are made to bond to the damaged layer to repair the damaged layer.
摘要翻译：损坏的层修复方法修复形成在具有低介电常数膜的SiOCH膜的表面中的损伤层，其含有硅，碳，氧和氢，并且通过使用等离子体的脱碳效应通过消除碳原子形成在基板上在蚀刻过程和灰化过程中。 CH 3 3自由基通过由结构式表示的C 8-18 H 2 O 2 O 2 H 2气的热分解产生，（CH 3 3）3 COOH（CH 3 3）3。 CH 3 3个基团与SiOCH膜中的损伤层接触并制成粘合到损伤层以修复受损层。

7. 发明申请

US20050011078A1 Measuring head 失效
标题翻译：测量头
公开(公告)号：US20050011078A1
公开(公告)日：2005-01-20
申请号：US10855965
申请日：2004-05-28
申请人： Kazuhiro Kubota
发明人： Kazuhiro Kubota
IPC分类号： G01B5/20 , G01B5/008 , G01B5/28 , G01B7/28 , G01B7/34 , G01B21/20
CPC分类号： G01B5/20 , G01B5/28 , G01B7/28 , G01B7/34
摘要： A measuring head is provided with a retracting device for a sensing pin, comprising an electric motor-driven feed screw, a nut shifted by the feed screw and an inclined face formed on the nut; a seesaw member to which the sensing pin is fitted is swung by the linear motion of the inclined face to retract the sensing pin; not only can the retracting speed and the returning speed of the sensing pin be controlled as desired but also can the retracting action of the sensing pin be stopped on the way to make possible its fine positioning. Further, the electric motor may be provided with a manual knob, and the sensing pin would be thereby enabled to be manually retracted.
摘要翻译：测量头设置有用于感测销的回缩装置，包括电动进给螺杆，由进给螺杆移位的螺母和形成在螺母上的倾斜面; 通过倾斜面的线性运动摆动感测针安装在其上的跷跷板构件以缩回感测销; 不仅可以根据需要控制感测针的缩回速度和返回速度，还可以阻止感测针的缩回动作使其精确定位成为可能。此外，电动机可以设置有手动旋钮，并且因此能够手动地缩回感测销。

8. 发明授权

US06400110B1 Wiper control apparatus 失效
标题翻译：刮水器控制装置
公开(公告)号：US06400110B1
公开(公告)日：2002-06-04
申请号：US09580589
申请日：2000-05-30
申请人： Hiroo Yabe , Kazuhiro Kubota
发明人： Hiroo Yabe , Kazuhiro Kubota
IPC分类号： H02P104
CPC分类号： H02H7/0851 , B60S1/08
摘要： A wiper control apparatus includes a combination switch 2, a wiper motor 2, an autostop (AS) switch 8, a first semiconductor switch element 4 for on/off controlling energization of the wiper motor, and a controller for supplying an ON/OFF control signal to the first semiconductor switch element. While the wiper operates in the operation mode set by the combination switch, if the level of the signal produced from said AS switch does not vary for a longer period than a prescribed abnormality detecting period owing to occurrence of abnormality of said wiper motor, said controller forcibly turns off said first semiconductor switch element. In this configuration, a wiper control apparatus can be provided which is compact, reliable and surely operable using a semiconductor switch and a controller digital controlled.
摘要翻译：刮水器控制装置包括组合开关2，刮水器马达2，自动停止（AS）开关8，用于开/关控制刮水马达的通电的第一半导体开关元件4和用于提供打开/关闭控制信号到第一半导体开关元件。当刮水器以由组合开关设置的操作模式操作时，如果由于所述刮水器马达的异常发生而从所述AS开关产生的信号的电平不比指定的异常检测时段更长的时间段变化，则所述控制器强制关闭所述第一半导体开关元件。在这种结构中，可以提供使用半导体开关和数字控制的控制器紧凑，可靠和可靠地操作的刮水器控制装置。

9. 发明授权

US4905341A Upright-type electric vacuum cleaner 失效
标题翻译：立式电动吸尘器
公开(公告)号：US4905341A
公开(公告)日：1990-03-06
申请号：US908670
申请日：1986-09-17
申请人： Masao Sunagawa , Kazuhiro Kubota , Yoshitaro Ishii , Susumu Satoh
发明人： Masao Sunagawa , Kazuhiro Kubota , Yoshitaro Ishii , Susumu Satoh
IPC分类号： A47L5/30
CPC分类号： A47L5/30
摘要： Disclosed is an upright-type electric vacuum cleaner which comprises a suction port body provided with a rotary brush and a main body case supported tiltably on the suction port body. Improvements are made in details such as the arrangement for supporting the main body case in the suction port body, the arrangements of mounting a handle onto the main body case, the configuration of a main body duct, the arrangement of a rotary brush, the arrangement of a cover of the main body case, and the arrangement of a T-shaped joint for connecting the main body duct and a dust filter means, thereby increasing the strength and rigidity of each of these parts and improving the performance of the vacuum cleaner.

10. 发明授权

US09048178B2 Plasma etching method and semiconductor device manufacturing method 有权
标题翻译：等离子体蚀刻方法和半导体器件制造方法
公开(公告)号：US09048178B2
公开(公告)日：2015-06-02
申请号：US14346986
申请日：2012-09-25
申请人： Kazuhiro Kubota , Masanobu Honda , Takayuki Katsunuma
发明人： Kazuhiro Kubota , Masanobu Honda , Takayuki Katsunuma
IPC分类号： H01L21/302 , H01L21/66 , H01J37/32 , H01L21/311 , H01L21/768
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32449 , H01J37/32724 , H01L21/308 , H01L21/31116 , H01L21/31144 , H01L21/76802 , H01L21/76811 , H01L21/76813 , H01L21/76877 , H01L22/26 , H01L2221/1015 , H01L2924/0002 , H01L2924/00
摘要： A plasma etching method is provided for etching a substrate corresponding to an etching object within an etching apparatus that includes a supply condition adjustment unit for adjusting a supply condition for supplying etching gas to the substrate, a temperature adjustment unit for adjusting a temperature of the substrate placed on a stage along a radial direction, and a plasma generating unit for generating plasma within a space between the supply condition adjustment unit and the stage. The plasma etching method includes a control step in which the temperature adjustment unit controls the temperature of the substrate to be uniform within a substrate plane of the substrate, and an adjustment step in which the supply condition adjustment unit adjusts a concentration distribution of active species contained in the plasma generated by the plasma generation unit within the space above the substrate.
摘要翻译：提供了一种等离子体蚀刻方法，用于在包括用于调节向衬底提供蚀刻气体的供应条件的供应条件调节单元的蚀刻装置内蚀刻对应于蚀刻对象的衬底，温度调节单元，用于调节衬底的温度放置在沿径向的台面上，以及等离子体产生单元，用于在供应条件调节单元和台之间的空间内产生等离子体。等离子体蚀刻方法包括：控制步骤，其中温度调节单元控制衬底的温度在衬底的衬底平面内均匀;以及调节步骤，其中供应条件调节单元调节所含活性物质的浓度分布在等离子体产生单元产生的等离子体中，在衬底上方的空间内。

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