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1. 发明授权

US08790489B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US08790489B2
公开(公告)日：2014-07-29
申请号：US13175096
申请日：2011-07-01
申请人： Masanobu Honda , Kazuhiro Kubota , Yoshinobu Ooya , Masaru Nishino
发明人： Masanobu Honda , Kazuhiro Kubota , Yoshinobu Ooya , Masaru Nishino
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , H01L21/311 , H01J37/32 , H01L21/67 , H01J37/18 , C23C16/06 , C23C16/22
CPC分类号： H01L21/6719 , H01J37/18 , H01J37/32091 , H01J37/32633 , H01J37/32834 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144
摘要： The substrate processing apparatus includes a process chamber which accommodates a wafer and performs a plasma etching process on the wafer, an exhaust chamber which communicates with the process chamber, an exhaust plate which divides the process chamber from the exhaust chamber and prevents plasma inside the process chamber from leaking into the exhaust chamber, and an upper electrode plate arranged inside the exhaust chamber, wherein the exhaust plate includes a plurality of through holes, and the upper electrode plate includes a plurality of through holes, is capable of contacting the exhaust plate in parallel, and is capable of being spaced apart from the exhaust plate.
摘要翻译：基板处理装置包括处理室，其容纳晶片并对晶片进行等离子体蚀刻处理，与处理室连通的排气室，将处理室与排气室分隔开的排气板，防止处理过程中的等离子体所述排气板包括多个通孔，所述上电极板包括多个通孔，所述多个通孔能够将所述排气板与所述排气室接触，并且能够与排气板间隔开。

2. 发明授权

US07998872B2 Method for etching a silicon-containing ARC layer to reduce roughness and CD 有权
标题翻译：用于蚀刻含硅ARC层以减少粗糙度和CD的方法
公开(公告)号：US07998872B2
公开(公告)日：2011-08-16
申请号：US12026913
申请日：2008-02-06
申请人： Vinh Hoang Luong , Masaru Nishino , Vaidyanathan Balasubramaniam
发明人： Vinh Hoang Luong , Masaru Nishino , Vaidyanathan Balasubramaniam
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/321 , H01J37/32192 , H01J37/3266 , H01J37/32697 , H01L21/0337 , H01L21/3086 , H01L21/31144
摘要： A method of dry developing a multi-layer mask having a silicon-containing anti-reflective coating (ARC) layer on a substrate is described. The method comprises forming the multi-layer mask on the substrate, wherein the multi-layer mask comprises a lithographic layer overlying the silicon-containing ARC layer. A feature pattern is then formed in the lithographic layer using a lithographic process, wherein the feature pattern comprises a first critical dimension (CD). Thereafter, the feature pattern is transferred from the lithographic layer to the silicon-containing ARC layer using a dry plasma etching process, wherein the first CD in the lithographic layer is reduced to a second CD in the silicon-containing layer and a first edge roughness is reduced to a second edge roughness in the silicon-containing ARC layer.
摘要翻译：描述了在衬底上干燥显影具有含硅抗反射涂层（ARC）层的多层掩模的方法。该方法包括在衬底上形成多层掩模，其中多层掩模包括覆盖含硅ARC层的光刻层。然后使用光刻工艺在光刻层中形成特征图案，其中特征图案包括第一临界尺寸（CD）。此后，使用干等离子体蚀刻工艺将特征图案从光刻层转移到含硅ARC层，其中光刻层中的第一CD被还原成含硅层中的第二CD，并且第一边缘粗糙度在含硅ARC层中减少到第二边缘粗糙度。

3. 发明申请

US20090197420A1 METHOD FOR ETCHING A SILICON-CONTAINING ARC LAYER TO REDUCE ROUGHNESS AND CD 有权
标题翻译：用于蚀刻含硅的ARC层以减少粗糙度和CD的方法
公开(公告)号：US20090197420A1
公开(公告)日：2009-08-06
申请号：US12026913
申请日：2008-02-06
申请人： Vinh Hoang Luong , Masaru Nishino , Vaidyanathan Balasubramaniam
发明人： Vinh Hoang Luong , Masaru Nishino , Vaidyanathan Balasubramaniam
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/321 , H01J37/32192 , H01J37/3266 , H01J37/32697 , H01L21/0337 , H01L21/3086 , H01L21/31144
摘要： A method of dry developing a multi-layer mask having a silicon-containing anti-reflective coating (ARC) layer on a substrate is described. The method comprises forming the multi-layer mask on the substrate, wherein the multi-layer mask comprises a lithographic layer overlying the silicon-containing ARC layer. A feature pattern is then formed in the lithographic layer using a lithographic process, wherein the feature pattern comprises a first critical dimension (CD). Thereafter, the feature pattern is transferred from the lithographic layer to the silicon-containing ARC layer using a dry plasma etching process, wherein the first CD in the lithographic layer is reduced to a second CD in the silicon-containing layer and a first edge roughness is reduced to a second edge roughness in the silicon-containing ARC layer.
摘要翻译：描述了在衬底上干燥显影具有含硅抗反射涂层（ARC）层的多层掩模的方法。该方法包括在衬底上形成多层掩模，其中多层掩模包括覆盖含硅ARC层的光刻层。然后使用光刻工艺在光刻层中形成特征图案，其中特征图案包括第一临界尺寸（CD）。此后，使用干等离子体蚀刻工艺将特征图案从光刻层转移到含硅ARC层，其中光刻层中的第一CD被还原成含硅层中的第二CD，并且第一边缘粗糙度在含硅ARC层中减少到第二边缘粗糙度。

4. 发明授权

US06986851B2 Dry developing method 失效
标题翻译：干发展方法
公开(公告)号：US06986851B2
公开(公告)日：2006-01-17
申请号：US10486828
申请日：2002-08-13
申请人： Akinori Kitamura , Vaidya Nathan Balasubramaniam , Koichiro Inazawa , Masaru Nishino
发明人： Akinori Kitamura , Vaidya Nathan Balasubramaniam , Koichiro Inazawa , Masaru Nishino
IPC分类号： B44C1/22 , C03C15/00
CPC分类号： G03F7/265 , G03F7/0035 , G03F7/0757 , G03F7/094 , G03F7/36 , G03F7/405 , H01L21/31144
摘要： A dry developing method for drawing a resist formed on a processed body by leading processing gas between parallel flat electrodes installed in a vacuum processing container and forming the plasma of the processing gas by applying a high frequency power to the electrodes, comprising the step of plasma-processing the resist on an etched layer having an already developed upper layer resist containing silicon and a lower layer resist installed in contact with the lower layer of the upper layer resist, wherein the lower layer resist is processed by a first process for plasma-processing by using the mixed gas of carbon monoxide gas and oxygen gas and a second step for plasma-processing by using the mixed gas of nitrogen gas and hydrogen gas, whereby an accurate drawing can be applied efficiently to the resist.
摘要翻译：一种干式显影方法，用于通过在安装在真空处理容器中的平行平面电极之间引导处理气体并且通过向电极施加高频电力来形成处理气体的等离子体来形成加工体上形成的抗蚀剂，其包括等离子体在具有已经显影的上层抗蚀剂的蚀刻层上加工抗蚀剂，所述蚀刻层含有硅和与上层抗蚀剂的下层接触的下层抗蚀剂，其中下层抗蚀剂通过等离子体处理的第一工艺通过使用一氧化碳气体和氧气的混合气体，并且通过使用氮气和氢气的混合气体进行等离子体处理的第二步骤，由此可以有效地将抗蚀剂应用于抗蚀剂。

5. 发明授权

US5963685A Cross-connection of wavelength-division-multiplexed high speed optical channels 失效
标题翻译：波分复用高速光通道的交叉连接
公开(公告)号：US5963685A
公开(公告)日：1999-10-05
申请号：US889051
申请日：1997-07-07
申请人： Masaru Nishino
发明人： Masaru Nishino
IPC分类号： G02B6/293 , G02B6/34 , H04J1/00 , H04J14/00 , H04J14/02 , H04Q3/52 , H04Q11/00
CPC分类号： G02B6/29319 , G02B6/29322 , G02B6/2938 , G02B6/29395 , H04J14/021 , H04Q11/0005 , H04J14/0206 , H04J14/0209 , H04J14/0213 , H04Q2011/0035 , H04Q2011/0039
摘要： A cross-connection device has two three-port optical circulators for being supplied with wavelength-division-multiplexed optical signals each having a plurality of wavelengths from respective input ports, a fiber grating mirror inserted between the three-port optical circulators, for reflecting only an optical signal having a certain wavelength and passing optical signals having other wavelengths, a fiber grating mirror controller for controlling the wavelength reflected by the fiber grating mirror, and two output ports for outputting cross-connected wavelength-division-multiplexed optical signals from the optical circulators. The fiber grating mirror controller controls the temperature and pressure applied to the fiber grating mirror to select the wavelength reflected by the fiber grating mirror. The fiber grating mirror may comprise a plurality of fiber grating mirrors for reflecting different wavelengths to cross-connect a desired number of optical signals of the supplied wavelength-division-multiplexed optical signals.
摘要翻译：交叉连接装置具有两个三端口光循环器，用于提供波分复用光信号，每个波分复用光信号具有来自相应输入端口的多个波长，插入在三端口光循环器之间的光纤光栅镜，仅用于仅反射具有一定波长的光信号和具有其他波长的光信号，用于控制由光纤光栅镜反射的波长的光纤光栅反射镜控制器和用于从光学器件输出交叉连接的波分复用光信号的两个输出端口循环器光纤光栅镜控制器控制施加到光纤光栅镜的温度和压力，以选择由光纤光栅镜反射的波长。光纤光栅镜可以包括多个光纤光栅镜，用于反射不同的波长以交叉连接所提供的波分复用光信号的期望数量的光信号。

6. 发明授权

US08361275B2 Etching apparatus 有权
公开(公告)号：US08361275B2
公开(公告)日：2013-01-29
申请号：US13415566
申请日：2012-03-08
申请人： Shigeru Tahara , Masaru Nishino
发明人： Shigeru Tahara , Masaru Nishino
IPC分类号： H01L21/3065
CPC分类号： H01L21/30604 , H01J37/32935 , H01L21/31116 , H01L21/31138
摘要： When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral portion of a gas supply unit, which face the central and the periphery part of the substrate respectively, the processing gas is supplied such that a gas flow rate is greater in the central portion than in the peripheral portion. When the substrate is etched by using a processing gas including a second gas containing halogen and carbon and having a carbon number of three or more per molecule, the processing gas is supplied such that a gas flow rate is greater in the peripheral portion than in the central portion.

7. 发明授权

US08190023B2 Optical communication device, optical communication system, optical output control method and program 有权
标题翻译：光通信设备，光通信系统，光输出控制方法和程序
公开(公告)号：US08190023B2
公开(公告)日：2012-05-29
申请号：US12511432
申请日：2009-07-29
申请人： Masaru Nishino
发明人： Masaru Nishino
IPC分类号： H04B10/00
CPC分类号： H04B10/07955 , H04B2210/08 , H04J14/0221 , H04J14/0272 , H04J14/0283
摘要： An input of a command to stop optical output or a command to reduce optical output by a main signal transmitting section is received from the outside. When the input of the optical output stop command or optical output reduction command is received, an inter-device control signal communication section transmits the optical output stop command or optical output reduction command. Based on the input optical output stop command or optical output reduction command, an output of optical signals from the main signal transmitting section is stopped, or else the output level is reduced to less than the output level during normal operation.
摘要翻译：从外部接收输入停止光输出的命令的输入或减少主信号发送部的光输出的指令。当接收到光输出停止命令或光输出降低命令的输入时，设备间控制信号通信部分发送光输出停止命令或光输出减少命令。基于输入光输出停止命令或光输出降低命令，停止来自主信号发送部的光信号的输出，否则输出电平在正常工作期间降低到小于输出电平。

8. 发明申请

US20100116786A1 ETCHING METHOD AND APPARATUS 审中-公开
标题翻译：蚀刻方法和装置
公开(公告)号：US20100116786A1
公开(公告)日：2010-05-13
申请号：US12690795
申请日：2010-01-20
申请人： Shigeru Tahara , Masaru Nishino
发明人： Shigeru Tahara , Masaru Nishino
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01L21/30604 , H01J37/32935 , H01L21/31116 , H01L21/31138
摘要： When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral portion of a gas supply unit, which face the central and the periphery part of the substrate respectively, the processing gas is supplied such that a gas flow rate is greater in the central portion than in the peripheral portion. When the substrate is etched by using a processing gas including a second gas containing halogen and carbon and having a carbon number of three or more per molecule, the processing gas is supplied such that a gas flow rate is greater in the peripheral portion than in the central portion.
摘要翻译：当通过使用包含含有卤素和碳的第一气体并且具有每分子碳数为两个或更少碳原子的第一气体的处理气体来蚀刻基板时，同时从气体供应源的中央和外围部分向基板供应处理气体单元，分别面对基板的中心部分和周边部分，供应处理气体，使得中心部分的气体流量比在周边部分中更大。当通过使用包含含有卤素和碳的第二气体并且每分子具有三个或更多个碳数的第二气体的处理气体进行蚀刻时，提供处理气体，使得周边部分的气体流量比在中央部分

9. 发明申请

US20070111529A1 PLASMA ETCHING METHOD 审中-公开
标题翻译：等离子体蚀刻法
公开(公告)号：US20070111529A1
公开(公告)日：2007-05-17
申请号：US11561160
申请日：2006-11-17
申请人： Masaru NISHINO
发明人： Masaru NISHINO
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/76802 , H01L21/7682 , H01L21/76829
摘要： In a plasma etching method for etching a target object by using a plasma of a processing gas in a processing chamber of a plasma processing apparatus, the target object includes an etching target film and a porous Low-k film formed above the etching target film. The processing gas contains CO2 and a fluorocarbon compound made up of fluorine and carbon in which the number of carbon atom is 2 or less in a molecule, but does not contains a hydrofluorocarbon compound made up of carbon, fluorine and hydrogen.
摘要翻译：在等离子体处理装置的处理室中通过使用处理气体的等离子体来蚀刻目标物体的等离子体蚀刻方法中，目标物体包括蚀刻目标膜和形成在蚀刻靶膜上方的多孔Low-k膜。处理气体在分子中含有CO 2 CO 2和碳氟原子数为2以下的氟碳化合物，但不含有由碳构成的氢氟烃化合物，氟和氢。

10. 发明授权

US06594046B1 Level-flattening circuit for WDM optical signals 有权
标题翻译： WDM光信号的平坦化电路
公开(公告)号：US06594046B1
公开(公告)日：2003-07-15
申请号：US09307976
申请日：1999-05-10
申请人： Masaru Nishino
发明人： Masaru Nishino
IPC分类号： H04J1402
CPC分类号： H04B10/2941 , H01S2301/04 , H04B2210/258 , H04J14/0221
摘要： It is an object of the invention to provide a level-flattening circuit for WDM optical signals which can be used in an optical signal repeating station. A level flattening circuit for WDM optical signals is supplied with WDM optical signal and demultiplexs them into individual optical signals having different wavelengths, levels of which are separately feedback controlled to provide flattened optical signal levels.
摘要翻译：本发明的目的是提供一种可用于光信号重复站的WDM光信号的电平平坦电路。用于WDM光信号的电平扁平电路被提供有WDM光信号，并将其解复用为具有不同波长的各个光信号，其电平被单独反馈控制以提供平坦化的光信号电平。

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