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    • 4. 发明申请
    • Method and Device for Judging Polarity of Single Crystal Sample
    • 用于判断单晶样品极性的方法和装置
    • US20090225946A1
    • 2009-09-10
    • US11991495
    • 2006-08-30
    • Katsuhiko Inaba
    • Katsuhiko Inaba
    • G01N23/207
    • G01N23/20
    • Wavelength dependence of diffraction X-ray intensity of a single crystal sample is measured using an X-ray incident optical system of simple structure so that the polarity of the single crystal sample can be judged. When the polarity of the {111} face of a GaAs single crystal sample (18) is judged, for example, an X-ray source (10) which can generate X-rays in a predetermined wavelength range including in the middle the wavelength at the K absorption end of Ga, i.e. an X-ray source of Au target, is employed. An X-ray beam (12) emitted from that X-ray source is reflected on a paraboloidal multilayer film mirror (14) to form a parallel beam (16) including an X-ray in a predetermined wavelength range. The sample (18) is irradiated with the parallel beam and the intensity of a diffraction X-ray therefrom is detected by an X-ray detector (22). Wavelength dependence of diffraction X-ray intensity is measured in the wavelength range including the wavelength at the absorption end by performing 2θ/ω scanning. Polarity is judged by determining the ratio of diffraction X-ray intensity on the shorter wavelength side than the absorption end to diffraction X-ray intensity on the longer wavelength side than the absorption on end.
    • 使用具有简单结构的X射线入射光学系统测量单晶样品的X射线强度的波长依赖性,从而可以判断单晶样品的极性。 当判断GaAs单晶样品(18)的{111}面的极性时,例如可以在预定波长范围内产生X射线的X射线源(10) 使用Ga的K吸收端,即Au靶的X射线源。 从该X射线源射出的X射线束(12)在抛物面多层膜反射镜(14)上反射,形成包含规定波长范围的X射线的平行光束(16)。 用平行光束照射样品(18),用X射线检测器(22)检测衍射X射线的强度。 衍射的波长依赖性通过进行2θ/ω扫描,在包括吸收端的波长的波长范围内测量X射线强度。 通过确定比吸收端更短的波长侧的衍射X射线强度与长波长侧的衍射X射线强度的比值比终端的吸收判定极性。
    • 7. 发明授权
    • Method and device for judging polarity of single crystal sample
    • 用于判断单晶样品极性的方法和装置
    • US07680246B2
    • 2010-03-16
    • US11991495
    • 2006-08-30
    • Katsuhiko Inaba
    • Katsuhiko Inaba
    • G01N23/207
    • G01N23/20
    • Wavelength dependence of diffraction X-ray intensity of a single crystal sample is measured using an X-ray incident optical system of simple structure so that the polarity of the single crystal sample can be judged. When the polarity of the {111} face of a GaAs single crystal sample (18) is judged, for example, an X-ray source (10) which can generate X-rays in a predetermined wavelength range including in the middle the wavelength at the K absorption end of Ga, i.e. an X-ray source of Au target, is employed. An X-ray beam (12) emitted from that X-ray source is reflected on a paraboloidal multilayer film mirror (14) to form a parallel beam (16) including an X-ray in a predetermined wavelength range. The sample (18) is irradiated with the parallel beam and the intensity of a diffraction X-ray therefrom is detected by an X-ray detector (22). Wavelength dependence of diffraction X-ray intensity is measured in the wavelength range including the wavelength at the absorption end by performing 2θ/ω scanning. Polarity is judged by determining the ratio of diffraction X-ray intensity on the shorter wavelength side than the absorption end to diffraction X-ray intensity on the longer wavelength side than the absorption on end.
    • 使用具有简单结构的X射线入射光学系统测量单晶样品的X射线强度的波长依赖性,从而可以判断单晶样品的极性。 当判断GaAs单晶样品(18)的{111}面的极性时,例如可以在预定波长范围内产生X射线的X射线源(10) 使用Ga的K吸收端,即Au靶的X射线源。 从该X射线源射出的X射线束(12)在抛物面多层膜反射镜(14)上反射,形成包含规定波长范围的X射线的平行光束(16)。 用平行光束照射样品(18),用X射线检测器(22)检测衍射X射线的强度。 衍射的波长依赖性通过进行2& t /ω扫描,在包括吸收端的波长的波长范围内测量X射线强度。 通过确定比吸收端更短的波长侧的衍射X射线强度与长波段侧的衍射X射线强度的比值比终端的吸收判定极性。