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1. 发明授权

US08587022B2 Nitride semiconductor light-emitting element and process for production thereof 有权
标题翻译：氮化物半导体发光元件及其制造方法
公开(公告)号：US08587022B2
公开(公告)日：2013-11-19
申请号：US13256061
申请日：2010-12-27
申请人： Akira Inoue , Junko Iwanaga , Ryou Kato , Masaki Fujikane , Toshiya Yokogawa
发明人： Akira Inoue , Junko Iwanaga , Ryou Kato , Masaki Fujikane , Toshiya Yokogawa
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/0075 , H01L33/32 , H01L2224/13 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based semiconductor light-emitting device 31 includes: an n-type GaN substrate 1 which has an m-plane principal surface; a current diffusing layer 7 provided on the n-type GaN substrate 1; an n-type nitride semiconductor layer 2 provided on the current diffusing layer 7; an active layer 3 provided on the n-type nitride semiconductor layer 2; a p-type nitride semiconductor layer 4 provided on the active layer 3; a p-electrode 5 which is in contact with the p-type nitride semiconductor layer 4; and an n-electrode 6 which is in contact with the n-type GaN substrate 1 or the n-type nitride semiconductor layer 2. The donor impurity concentration of the n-type nitride semiconductor layer 2 is not more than 5×1018 cm−3, and the donor impurity concentration of the current diffusing layer 7 is ten or more times the donor impurity concentration of the n-type nitride semiconductor layer 2.
摘要翻译：氮化物系半导体发光元件31具备：具有m面主面的n型GaN衬底1，设置在n型GaN衬底1上的电流扩散层7; 设置在电流扩散层7上的n型氮化物半导体层2; 设置在n型氮化物半导体层2上的有源层3; 设置在有源层3上的p型氮化物半导体层4; 与p型氮化物半导体层4接触的p电极5; 以及与n型GaN衬底1或n型氮化物半导体层2接触的n电极6.n型氮化物半导体层2的施主杂质浓度不大于5×1018cm- 3，电流扩散层7的施主杂质浓度为n型氮化物半导体层2的施主杂质浓度的十倍以上。

2. 发明授权

US07473967B2 Strained channel finFET device 失效
标题翻译：应变通道finFET器件
公开(公告)号：US07473967B2
公开(公告)日：2009-01-06
申请号：US10558671
申请日：2004-05-31
申请人： Haruyuki Sorada , Takeshi Takagi , Akira Asai , Yoshihiko Kanzawa , Kouji Katayama , Junko Iwanaga
发明人： Haruyuki Sorada , Takeshi Takagi , Akira Asai , Yoshihiko Kanzawa , Kouji Katayama , Junko Iwanaga
IPC分类号： H01L27/088
CPC分类号： H01L29/785 , H01L29/66795 , H01L29/78687
摘要： A semiconductor device according to this invention includes: a first insulating layer (11); a first body section (13) including an island-shaped semiconductor formed on the first insulating layer; a second body section (14) including an island-shaped semiconductor formed on the first insulating layer; a ridge-shaped connecting section (15) formed on the first insulating layer to interconnect the first body section and the second body section; a channel region (15a) formed by at least a part of the connecting section in lengthwise direction of the connecting section; a gate electrode (18) formed to cover a periphery of the channel region, with a second insulating layer intervening therebetween; a source region formed to extend over the first body section and a portion of the connecting section between the first body section and the channel region; and a drain region formed to extend over the second body section and a portion of the connecting section between the second body section and the channel region, wherein a semiconductor forming the channel region has a lattice strain.
摘要翻译：根据本发明的半导体器件包括：第一绝缘层（11）; 第一主体部分（13），其包括形成在所述第一绝缘层上的岛状半导体; 包括形成在所述第一绝缘层上的岛状半导体的第二主体部分（14）形成在第一绝缘层上以互连第一主体部分和第二主体部分的脊形连接部分（15）; 由连接部的长度方向的至少一部分形成的通道区域（15a）; 形成为覆盖沟道区域的周边的栅极电极（18），其间插入有第二绝缘层; 形成为在第一主体部分上延伸的源极区域和在第一主体部分和沟道区域之间的连接部分的一部分; 以及形成为在第二主体部分上延伸的漏极区域和在第二主体部分和沟道区域之间的连接部分的一部分，其中形成沟道区域的半导体具有晶格应变。

3. 发明申请

US20130214288A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：氮化物半导体发光元件及其制造方法
公开(公告)号：US20130214288A1
公开(公告)日：2013-08-22
申请号：US13880027
申请日：2012-05-02
申请人： Toshiya Yokogawa , Junko Iwanaga , Akira Inoue
发明人： Toshiya Yokogawa , Junko Iwanaga , Akira Inoue
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/02 , H01L33/16
摘要： A nitride-based semiconductor light-emitting device of an embodiment includes a semiconductor multilayer structure having a growing plane which is an m-plane and being made of a GaN-based semiconductor. The semiconductor multilayer structure includes a n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode provided on the p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The ratio of the thickness of the active layer to the thickness of the n-type semiconductor layer, D, is in the range of 1.8×10−4≦D≦14.1×10−4. The area of the p-side electrode, S, is in the range of 1×102 μm2≦S≦9×104 μm2. A maximum current density which leads to 88% of a maximum of the external quantum efficiency is not less than 2 A/mm2.
摘要翻译：实施方式的氮化物系半导体发光元件具有半导体层叠结构，该半导体层叠结构具有作为m面的生长面并由GaN系半导体构成。半导体多层结构包括n型半导体层，p型半导体层，设置在p型半导体层上的p侧电极以及介于n型半导体层和p型半导体层之间的有源层半导体层。有源层的厚度与n型半导体层的厚度D之比在1.8×10 -4 @ D @ 14.1×10 -4的范围内。 p侧电极S的面积在1×102mum2 @ S @ 9×104mum2的范围内。导致外部量子效率最大值的88％的最大电流密度不小于2A / mm2。

4. 发明授权

US08421054B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08421054B2
公开(公告)日：2013-04-16
申请号：US13351452
申请日：2012-01-17
申请人： Junko Iwanaga , Toshiya Yokogawa , Atsushi Yamada
发明人： Junko Iwanaga , Toshiya Yokogawa , Atsushi Yamada
IPC分类号： H01L29/04 , H01L29/26
CPC分类号： H01L33/382 , H01L33/16 , H01L33/32
摘要： A light-emitting diode element includes: an n-type conductive layer 2 being made of a gallium nitride-based compound, a principal surface being an m-plane; a semiconductor multilayer structure 21 provided on a first region 2a of the principal surface of the n-type conductive layer 2, the semiconductor multilayer structure 21 including a p-type conductive layer 4 and an active layer 3; a p-electrode 5 provided on the p-type conductive layer 4; a conductor portion 9 provided on a second region 2b of the principal surface of the n-type conductive layer 2, the conductor portion 9 being in contact with an inner wall of a through hole 8; and an n-type front surface electrode 6 provided on the second region 2b of the principal surface of the n-type conductive layer 2, the n-type front surface electrode 6 being in contact with the conductor portion 9.
摘要翻译：发光二极管元件包括：n型导电层2，其由氮化镓基化合物制成，主表面为m面; 设置在n型导电层2的主表面的第一区域2a上的半导体多层结构21，包括p型导电层4和活性层3的半导体多层结构21; 设置在p型导电层4上的p电极5; 设置在n型导电层2的主表面的第二区域2b上的导体部分9，导体部分9与通孔8的内壁接触; 以及设置在n型导电层2的主表面的第二区域2b上的n型正面电极6，n型正面电极6与导体部分9接触。

5. 发明申请

US20120113656A1 LIGHT-EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20120113656A1
公开(公告)日：2012-05-10
申请号：US13351452
申请日：2012-01-17
申请人： Junko Iwanaga , Toshiya Yokogawa , Atsushi Yamada
发明人： Junko Iwanaga , Toshiya Yokogawa , Atsushi Yamada
IPC分类号： F21V21/00 , H01L33/38
CPC分类号： H01L33/382 , H01L33/16 , H01L33/32
摘要： A light-emitting diode element includes: an n-type conductive layer 2 being made of a gallium nitride-based compound, a principal surface being an m-plane; a semiconductor multilayer structure 21 provided on a first region 2a of the principal surface of the n-type conductive layer 2, the semiconductor multilayer structure 21 including a p-type conductive layer 4 and an active layer 3; a p-electrode 5 provided on the p-type conductive layer 4; a conductor portion 9 provided on a second region 2b of the principal surface of the n-type conductive layer 2, the conductor portion 9 being in contact with an inner wall of a through hole 8; and an n-type front surface electrode 6 provided on the second region 2b of the principal surface of the n-type conductive layer 2, the n-type front surface electrode 6 being in contact with the conductor portion 9.
摘要翻译：发光二极管元件包括：n型导电层2，其由氮化镓基化合物制成，主表面为m面; 设置在n型导电层2的主表面的第一区域2a上的半导体多层结构21，包括p型导电层4和活性层3的半导体多层结构21; 设置在p型导电层4上的p电极5; 设置在n型导电层2的主表面的第二区域2b上的导体部分9，导体部分9与通孔8的内壁接触; 以及设置在n型导电层2的主表面的第二区域2b上的n型正面电极6，n型正面电极6与导体部分9接触。

6. 发明申请

US20110244645A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110244645A1
公开(公告)日：2011-10-06
申请号：US13162310
申请日：2011-06-16
申请人： Junko IWANAGA , Takeshi Takagi , Yoshihiko Kanzawa , Haruyuki Sorada , Tohru Saitoh , Takahiro Kawashima
发明人： Junko IWANAGA , Takeshi Takagi , Yoshihiko Kanzawa , Haruyuki Sorada , Tohru Saitoh , Takahiro Kawashima
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L29/785 , H01L21/823431 , H01L27/0886 , H01L29/66795
摘要： A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film.
摘要翻译：一种半导体器件包括：形成沟槽的半导体衬底; 源极区域和漏极区域，每个源极区域和漏极区域被埋在沟槽中并且包含相同导电类型的杂质; 掩埋在沟槽中并设置在源区和漏区之间的半导体FIN; 设置在半导体FIN的侧表面上的栅极绝缘膜以及半导体FIN的上表面; 以及形成在栅极绝缘膜上的栅电极。

7. 发明授权

US07986002B2 FINFET-type semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07986002B2
公开(公告)日：2011-07-26
申请号：US10549291
申请日：2004-03-19
申请人： Junko Iwanaga , Takeshi Takagi , Yoshihiko Kanzawa , Haruyuki Sorada , Tohru Saitoh , Takahiro Kawashima
发明人： Junko Iwanaga , Takeshi Takagi , Yoshihiko Kanzawa , Haruyuki Sorada , Tohru Saitoh , Takahiro Kawashima
IPC分类号： H01L29/66
CPC分类号： H01L29/785 , H01L21/823431 , H01L27/0886 , H01L29/66795
摘要： A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film.
摘要翻译：一种半导体器件包括：形成沟槽的半导体衬底; 源极区域和漏极区域，每个源极区域和漏极区域被埋在沟槽中并且包含相同导电类型的杂质; 掩埋在沟槽中并设置在源区和漏区之间的半导体FIN; 设置在半导体FIN的侧表面上的栅极绝缘膜以及半导体FIN的上表面; 以及形成在栅极绝缘膜上的栅电极。

8. 发明授权

US5925903A Field-effect transistors and method of manufacturing the same 失效
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US5925903A
公开(公告)日：1999-07-20
申请号：US991635
申请日：1997-12-16
申请人： Junko Iwanaga , Yorito Ota , Tadayoshi Nakatsuka , Hiroyuki Masato , Katsuhiko Kawashima
发明人： Junko Iwanaga , Yorito Ota , Tadayoshi Nakatsuka , Hiroyuki Masato , Katsuhiko Kawashima
IPC分类号： H01L21/285 , H01L21/338 , H01L29/08 , H01L29/812 , H01L29/80
CPC分类号： H01L29/66863 , H01L21/28587 , H01L29/0891 , H01L29/8128
摘要： A conductive layer made of n-type GaAs is formed on a semi-insulating substrate made of GaAs. A pair of contact regions made of n.sup.+ -type GaAs are formed on the conductive layer. A source electrode is formed on the left-hand contact region, while a drain electrode is formed on the right-hand contact region. A gate recessed region is formed in the region of the conductive layer located between the pair of contact regions so that a gate electrode is formed on the gate recessed region. A depressed portion is formed in the gate recessed region of the conductive layer. The wall face of the depressed portion closer to the gate electrode is flush with or protruding from the side face of the gate electrode facing the drain electrode.
摘要翻译：在由GaAs制成的半绝缘衬底上形成由n型GaAs制成的导电层。在导电层上形成由n +型GaAs构成的一对接触区域。源极电极形成在左侧接触区域上，而漏电极形成在右侧接触区域上。在位于一对接触区域之间的导电层的区域中形成栅极凹陷区域，使得栅极电极形成在栅极凹入区域上。凹陷部形成在导电层的栅极凹陷区域中。靠近栅电极的凹陷部分的壁面与面对漏电极的栅电极的侧面齐平或突出。

9. 发明授权

US5905277A Field-effect transistor and method of manufacturing the same 失效
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US5905277A
公开(公告)日：1999-05-18
申请号：US81054
申请日：1998-05-19
申请人： Yorito Ota , Hiroyuki Masato , Shigeru Morimoto , Junko Iwanaga
发明人： Yorito Ota , Hiroyuki Masato , Shigeru Morimoto , Junko Iwanaga
IPC分类号： H01L21/285 , H01L21/335 , H01L21/338 , H01L29/10 , H01L29/812 , H01L21/328 , H01L21/336 , H01L21/72 , H01L31/109
CPC分类号： H01L29/66462 , H01L21/28593 , H01L29/1075 , H01L29/8128
摘要： A channel layer made of n-type GaAs doped with Si, a hole absorption layer made of InGaAs having a valance band higher in energy level than that of GaAs, and an undoped layer made of GaAs are formed sequentially on a semi-insulating substrate made of GaAs. A gate recess region having a pair of sidewall portions each consisting of an upper sidewall composed of the undoped layer and a lower sidewall composed of the hole absorption layer is formed on the channel region. The channel region is exposed in the gate recess region. An indent having an undercut configuration is formed in the lower sidewall of the gate recess region. A gate electrode is formed to extend over a stepped portion composed of the sidewall portion of the gate recess region closer to a drain electrode.
摘要翻译：在半绝缘性基板上依次形成由掺杂有Si的n型GaAs构成的沟道层，由InGaAs制成的空穴吸收层，其能级高于GaAs的能级，以及由GaAs构成的未掺杂层的GaAs。在通道区域上形成具有一对侧壁部分的栅极凹部区域，每个侧壁部分由由未掺杂层构成的上侧壁和由空穴吸收层组成的下侧壁组成。沟道区域在栅极凹部区域露出。具有底切构造的凹口形成在栅极凹陷区域的下侧壁中。栅极形成为在靠近漏电极的栅极凹部的侧壁部分构成的阶梯部分上延伸。

10. 发明申请

US20060208300A1 Finfet-type semiconductor device and method for fabricating the same 有权
标题翻译： Finfet型半导体器件及其制造方法
公开(公告)号：US20060208300A1
公开(公告)日：2006-09-21
申请号：US10549291
申请日：2004-03-19
申请人： Junko Iwanaga , Takeshi Takagi , Yoshihiko Kanzawa , Haruyuki Sorada , Tohru Saitoh , Takahiro Kawashima
发明人： Junko Iwanaga , Takeshi Takagi , Yoshihiko Kanzawa , Haruyuki Sorada , Tohru Saitoh , Takahiro Kawashima
IPC分类号： H01L27/108
CPC分类号： H01L29/785 , H01L21/823431 , H01L27/0886 , H01L29/66795
摘要： A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film.
摘要翻译：一种半导体器件包括：形成沟槽的半导体衬底; 源极区域和漏极区域，每个源极区域和漏极区域被埋在沟槽中并且包含相同导电类型的杂质; 掩埋在沟槽中并设置在源区和漏区之间的半导体FIN; 设置在半导体FIN的侧表面上的栅极绝缘膜以及半导体FIN的上表面; 以及形成在栅极绝缘膜上的栅电极。

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