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    • 1. 发明申请
    • RESIST PROCESSING METHOD
    • 电阻加工方法
    • US20110189618A1
    • 2011-08-04
    • US13062180
    • 2009-09-01
    • Mitsuhiro HataNobuo AndoSatoshi YamamotoJunji ShigematsuAkira Kamabuchi
    • Mitsuhiro HataNobuo AndoSatoshi YamamotoJunji ShigematsuAkira Kamabuchi
    • G03F7/20
    • G03F7/0035G03F7/0045G03F7/0046G03F7/0397G03F7/40
    • A resist processing method comprises the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B), a cross-linking agent (C) and an acid amplifier (D) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.
    • 抗蚀剂处理方法包括以下步骤:(1)通过施加第一抗蚀剂组合物形成第一抗蚀剂膜,所述第一抗蚀剂组合物包含:具有酸不稳定基团的树脂(A),其在碱性水溶液中不溶或难溶,并且呈现 通过酸,光酸产生剂(B),交联剂(C)和酸放大器(D)的作用将其溶于碱水溶液中并干燥; (2)预烘第一抗蚀膜; (3)暴露于第一抗蚀膜; (4)第一抗蚀剂膜的曝光后烘烤; (5)用第一碱性显影剂显影以获得第一抗蚀剂图案; (6)硬烘烤第一抗蚀剂图案,(7)通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上并干燥获得第二抗蚀剂膜; (8)预烘烤第二抗蚀剂膜; (9)使第二抗蚀剂膜曝光; (10)曝光后烘烤第二抗蚀膜; 和(11)用第二碱性显影剂显影以获得第二抗蚀剂图案。
    • 3. 发明授权
    • Photoresist composition
    • 光刻胶组成
    • US08426106B2
    • 2013-04-23
    • US12903146
    • 2010-10-12
    • Tatsuro MasuyamaKazuhiko HashimotoJunji Shigematsu
    • Tatsuro MasuyamaKazuhiko HashimotoJunji Shigematsu
    • G03F7/039G03F7/20G03F7/30G03F7/38
    • C08F120/34C07C251/66C07C309/70G03F7/0045G03F7/0046G03F7/0397G03F7/2041
    • A Photoresist composition comprising a polymer comprising a structural unit derived from a compound represented by the formula (I): wherein R1 represents a hydrogen atom or a methyl group, R2 represents a C6-C12 aromatic hydrocarbon group which can have one or more substituents, R3 represents a cyano group or a C1-C12 hydrocarbon group which can have one or more substituents and which can contain one or more heteroatoms, A1 represents a single bond, —(CH2)g—CO—O—* or —(CH2)h—O—CO—(CH2)i—CO—O—* wherein g, h and i each independently represent an integer of −1 to 6 and * represents a binding position to the nitrogen atom, a resin having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid, and an acid generator.
    • 一种光致抗蚀剂组合物,其包含包含衍生自由式(I)表示的化合物的结构单元的聚合物:其中R 1表示氢原子或甲基,R 2表示可以具有一个或多个取代基的C 6 -C 12芳族烃基, R3表示可以具有一个或多个取代基且可以含有一个或多个杂原子的氰基或C 1 -C 12烃基,A 1表示单键, - (CH 2)g -CO-O- *或 - (CH 2) hO-CO-(CH2)i-CO-O- *其中g,h和i各自独立地表示1-6的整数,*表示与氮原子的结合位置,具有酸不稳定基团的树脂和 在碱性水溶液中不溶或难溶,但通过酸和酸生成剂可溶于碱水溶液。