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    • 1. 发明申请
    • RESIST PROCESSING METHOD
    • 电阻加工方法
    • US20110189618A1
    • 2011-08-04
    • US13062180
    • 2009-09-01
    • Mitsuhiro HataNobuo AndoSatoshi YamamotoJunji ShigematsuAkira Kamabuchi
    • Mitsuhiro HataNobuo AndoSatoshi YamamotoJunji ShigematsuAkira Kamabuchi
    • G03F7/20
    • G03F7/0035G03F7/0045G03F7/0046G03F7/0397G03F7/40
    • A resist processing method comprises the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B), a cross-linking agent (C) and an acid amplifier (D) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.
    • 抗蚀剂处理方法包括以下步骤:(1)通过施加第一抗蚀剂组合物形成第一抗蚀剂膜,所述第一抗蚀剂组合物包含:具有酸不稳定基团的树脂(A),其在碱性水溶液中不溶或难溶,并且呈现 通过酸,光酸产生剂(B),交联剂(C)和酸放大器(D)的作用将其溶于碱水溶液中并干燥; (2)预烘第一抗蚀膜; (3)暴露于第一抗蚀膜; (4)第一抗蚀剂膜的曝光后烘烤; (5)用第一碱性显影剂显影以获得第一抗蚀剂图案; (6)硬烘烤第一抗蚀剂图案,(7)通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上并干燥获得第二抗蚀剂膜; (8)预烘烤第二抗蚀剂膜; (9)使第二抗蚀剂膜曝光; (10)曝光后烘烤第二抗蚀膜; 和(11)用第二碱性显影剂显影以获得第二抗蚀剂图案。
    • 7. 发明授权
    • Resin and photoresist composition comprising the same
    • 树脂和包含其的光致抗蚀剂组合物
    • US08481243B2
    • 2013-07-09
    • US13345941
    • 2012-01-09
    • Hyungjoo KimAkira KamabuchiKoji Ichikawa
    • Hyungjoo KimAkira KamabuchiKoji Ichikawa
    • G03F7/039G03F7/20G03F7/30G03F7/38
    • C08F20/38C07D327/04C08F228/06G03F7/0045G03F7/0046G03F7/0397
    • The present invention provides a resin comprising a structural unit represented by the formula (aa): wherein R1 represents a C1-C6 alkyl group optionally having one or more halogen atoms, a hydrogen atom or a halogen atom, T1 represents a C4-C34 sultone ring group optionally having one or more substituents, Z1 represents a C1-C6 alkanediyl group optionally having one or more substituents, or a group represented by the formula (a-1): -A10X10-A11sX11-A12-  (a-1) wherein X10 and X11 each independently represents —O—, —NH—, —CO—, —CO—O—, —O—CO—, —CO—NH— or —NH—CO—, A10, A11 and A12 each independently represent a C1-C5 divalent aliphatic hydrocarbon group optionally having one or more substituents, and s represents 0 or 1, and Z2 represents a single bond or —CO—.
    • 本发明提供一种树脂,其包含由式(aa)表示的结构单元:其中R 1表示任选具有一个或多个卤素原子,氢原子或卤素原子的C 1 -C 6烷基,T 1表示C 4 -C 34磺内酯 任选具有一个或多个取代基的环基,Z1表示任选具有一个或多个取代基的C1-C6烷二基或由式(a-1)表示的基团:-A10X10-A11sX11-A12-(a-1)其中 X10和X11各自独立地表示-O-,-NH-,-CO-,-CO-O-,-O-CO-,-CO-NH-或-NH-CO-,A10,A11和A12各自独立地表示 任选具有一个或多个取代基的C 1 -C 5二价脂族烃基,s表示0或1,Z 2表示单键或-CO-。
    • 10. 发明授权
    • Amplification type positive resist composition
    • 放大型正光刻胶组合物
    • US07135268B2
    • 2006-11-14
    • US10440201
    • 2003-05-19
    • Akira KamabuchiYasunori UetaniHiroshi Moriuma
    • Akira KamabuchiYasunori UetaniHiroshi Moriuma
    • G03F7/004
    • G03F7/0397G03F7/0045Y10S430/106Y10S430/111Y10S430/114Y10S430/115Y10S430/12
    • The present invention provides a sulfonate of the formula (I′): wherein Q1, Q2, Q3, Q4 and Q5 each independently represent hydrogen, alkyl having 1 to 16 carbon atoms, alkoxy having 1 to 16 carbon atoms, or electron attractive group, with the proviso that at least one of Q1, Q2, Q3, Q4 and Q5 represents alkyl having 3 to 16 carbon atoms or alkoxy having 3 to 16 carbon atoms, and at least one of Q1, Q2, Q3, Q4 and Q5 is electron attractive group; and A′+ represents a counter ion of the formula (IIa), (IIb), (IIc) or (IId) which are identified in the specification. The present invention also provides a chemical amplification type positive resist composition comprising a sulfonate of the formula (I) wherein A+ represents counter ion, and Q1, Q2, Q3, Q4 and Q5 are as defined above; and resin which contains a structural unit having an acid labile group and which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid.
    • 本发明提供式(I')的磺酸盐:其中Q 1,Q 2,Q 3,Q 4, 各自独立地表示氢,具有1至16个碳原子的烷基,具有1至16个碳原子的烷氧基或吸电子基团,条件是Q < Q 1,Q 2,Q 3,Q 4和Q 5代表具有 3至16个碳原子或具有3至16个碳原子的烷氧基,以及Q 1,Q 2,Q 3,Q 3中的至少一个,Q 3 4+和Q 5是吸电子基团; 并且A' + 表示在说明书中确定的式(IIa),(IIb),(IIc)或(IId)的抗衡离子。 本发明还提供了一种化学扩增型正性抗蚀剂组合物,其包含式(I)的磺酸盐,其中A 0+表示抗衡离子,Q 1, 2,Q 3,Q 4和Q 5如上所定义; 以及含有具有酸不稳定基团的结构单元的树脂,其本身在碱性水溶液中不溶或难溶,但通过酸作用而溶于碱性水溶液中。