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    • 3. 发明授权
    • Planarization of metal layers on a semiconductor wafer through non-contact de-plating and control with endpoint detection
    • 通过非接触式去镀层和端点检测来控制半导体晶片上的金属层的平面化
    • US06720263B2
    • 2004-04-13
    • US09981505
    • 2001-10-16
    • Donald J. K. OlgadoJoseph J. StevensAlexander Lerner
    • Donald J. K. OlgadoJoseph J. StevensAlexander Lerner
    • H01L21302
    • H01L21/32115C25F7/00H01L21/32134H01L21/6708H01L21/7684
    • A non-contact apparatus and method for removing a metal layer from a substrate are provided. The apparatus includes a rotatable anode substrate support member configured to support a substrate in a face-up position and to electrically contact the substrate positioned thereon. A pivotally mounted cathode fluid dispensing nozzle assembly positioned above the anode substrate support member is also provided. A power supply in electrical communication with the anode substrate support member and the cathode fluid dispensing nozzle is provided, and a system controller configured to regulate at least one of a rate of rotation of the anode substrate support member, a radial position of the cathode fluid dispensing nozzle, and an output power of the power supply is provided. The method provides for the removal of a metal layer from a substrate by rotating the substrate in a face up position on a rotatable substrate support member. A cathode fluid dispensing nozzle is positioned over a central portion of the substrate and a metal removing solution is dispensed from the cathode fluid dispensing nozzle onto the central portion of the substrate. An electrical bias is applied between the substrate and the cathode fluid dispensing nozzle, which operates to deplate the metal layer below the fluid dispensing nozzle.
    • 提供了一种用于从基板去除金属层的非接触式设备和方法。 该装置包括可旋转的阳极基板支撑构件,其构造成将基板支撑在面朝上的位置并且电接触定位在其上的基板。 还提供了一种位于阳极基板支撑构件上方的枢转安装的阴极流体分配喷嘴组件。 提供与阳极基板支撑构件和阴极流体分配喷嘴电连通的电源,以及系统控制器,被配置为调节阳极基板支撑构件的旋转速率,阴极流体的径向位置 分配喷嘴,并且提供电源的输出功率。 该方法通过在可旋转的基板支撑构件上面向上的位置旋转基板来提供从基板移除金属层。 阴极流体分配喷嘴位于衬底的中心部分上方,金属去除溶液从阴极流体分配喷嘴分配到衬底的中心部分上。 在衬底和阴极流体分配喷嘴之间施加电偏压,其用于使流体分配喷嘴下方的金属层脱落。
    • 8. 发明授权
    • Polyaluminum chloride and aluminum chlorohydrate, processes and compositions: high-basicity and ultra high-basicity products
    • 聚氯化铝和氯化铝水合物,工艺和组成:高碱度和超高碱度的产品
    • US07846318B2
    • 2010-12-07
    • US11619483
    • 2007-01-03
    • William E. PrattJoseph J. StevensPeter G. Symons
    • William E. PrattJoseph J. StevensPeter G. Symons
    • C25D5/34C25B1/24B01D61/00C01B17/45C01B17/46
    • C01F7/56A61K8/26A61Q15/00B01D61/44C01B9/02C01G23/02C01G25/04C01G49/10
    • The invention relates generally to processes for the production of high-basicity and ultra-high basicity polyaluminum chlorides including aluminum chlorohydrate. The processes can produce products of a wide range of basicities and are particularly useful in producing high basicity products. The process can produce a wide range of solution concentrations and are particularly useful in producing high solution concentrations. The processes described generate high purity products, which are free of by-product salt(s). The processes described herein can also be utilized to produce enhanced efficacy polyaluminum chlorides including aluminum chlorohydrate. When compared to conventional processes for manufacturing these compounds the processes disclosed herein are unique in so far as the disclosed processes do not require aluminum metal as a starting material. The products of the processes are suitable in applications including water purification, catalysts, and antiperspirants. In addition, the invention is directed to the products prepared by the processes described herein.
    • 本发明一般涉及生产包括氯化铝水合物在内的高碱度和超高碱性聚氯化铝的方法。 该工艺可生产各种碱性产品,特别适用于生产高碱度产品。 该方法可产生大范围的溶液浓度,特别适用于生产高溶液浓度。 所述方法产生不含副产物盐的高纯度产物。 本文所述的方法也可用于产生包括氯化铝水合物的增强效力的聚氯化铝。 与用于制造这些化合物的常规方法相比,本文公开的方法是独特的,只要所公开的方法不需要铝金属作为起始材料即可。 该方法的产品适用于包括水净化,催化剂和止汗剂在内的应用。 此外,本发明涉及通过本文所述方法制备的产品。
    • 9. 发明授权
    • Method and associated apparatus for tilting a substrate upon entry for metal deposition
    • 用于在进入金属沉积时使衬底倾斜的方法和相关设备
    • US06582578B1
    • 2003-06-24
    • US09678947
    • 2000-10-03
    • Yezdi N. DordiJoseph J. StevensMichael N. Sugarman
    • Yezdi N. DordiJoseph J. StevensMichael N. Sugarman
    • C25D500
    • H01L21/67167C25D7/123C25D17/001C25D21/00C25D21/04H01L21/2885H01L21/67028H01L21/67051H01L21/6723H05K3/241
    • An electro-chemical plating system is described. A method is performed by the electro-chemical plating system in which a seed layer formed on a substrate is immersed into an electrolyte solution. In one aspect, a substrate is immersed in the electrochemical plating system by tilting the substrate as it enters the electrolyte solution to limit the trapping or formation of air bubbles in the electrolyte solution between the substrate and the substrate holder. In another aspect, an apparatus is provided for electroplating that comprises a cell, a substrate holder, and an actuator. The actuator can displace the substrate holder assembly in the x and z directions and also tilt the substrate. In another aspect, a method is provided of driving a meniscus formed by electrolyte solution across a surface of a substrate. The method comprises enhancing the interaction between the electrolyte solution meniscus and the surface as the substrate is immersed into the electrolyte solution.
    • 描述了电化学电镀系统。 通过将形成在基板上的籽晶层浸渍在电解液中的电化学电镀系统进行。 一方面,当基板进入电解质溶液时,通过使基板倾斜以限制基板和基板支架之间的电解液中的气泡的捕获或形成,将基板浸入电化学电镀系统中。 在另一方面,提供一种用于电镀的设备,其包括电池,衬底保持器和致动器。 致动器可以在x和z方向上移动基板保持器组件,并且还使基板倾斜。 在另一方面,提供一种驱动由电解质溶液形成的弯液面跨越衬底的表面的方法。 该方法包括当基底浸入电解质溶液时增强电解液溶液弯液面与表面之间的相互作用。
    • 10. 发明授权
    • Two piece anti-stick clamp ring
    • 两片防卡钳环
    • US5632873A
    • 1997-05-27
    • US446396
    • 1995-05-22
    • Joseph J. StevensRoy J. EdwardsAvi Tepman
    • Joseph J. StevensRoy J. EdwardsAvi Tepman
    • C23C14/50C23C16/458H01L21/687C23C14/34B05C13/00C23C16/04
    • H01L21/68721C23C14/50C23C16/4585
    • A chamber for depositing a film layer on a substrate includes a support member on which the substrate is positioned for processing in the chamber, and a ring assembly suspended in the chamber on a chamber shield. The ring assembly comprises first and second rings, the second ring being disposed intermediate the first ring and the substrate. The support member is positionable in the chamber to receive a substrate thereon, and further positionable to pass the substrate through the shield and thereby lift the ring assembly off the shield. After deposition is complete, the support member retracts through the shield, to reposition the outer ring on the shield. The inner ring continues to move downwardly with the substrate support member a short distance before it is repositioned on the shield. In the event that a deposition material layer has formed between the substrate and the outer ring, the inner ring includes a plurality of tabs thereon which contact the substrate to force it out of the ring assembly as the inner ring continues downwardly after the outer ring has been positioned on the shield.
    • 用于在衬底上沉积膜层的室包括支撑构件,衬底位于该支撑构件上用于在室中进行处理,以及环形组件,其悬挂在腔室屏蔽中的腔室中。 环组件包括第一和第二环,第二环设置在第一环和衬底之间。 支撑构件可定位在腔室中以在其上接收衬底,并且可进一步定位以使衬底穿过屏蔽件,从而将环组件提离屏蔽。 沉积完成后,支撑构件通过屏蔽件缩回,以将外环重新定位在屏蔽上。 在其被重新定位在护罩上之前,内环继续向下移动,衬底支撑构件短距离。 在衬底和外环之间形成沉积材料层的情况下,内圈包括多个接头,当外环具有内环时内环继续向下,接触衬底以将其压出环组件 被定位在盾牌上。