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1. 发明申请

US20080042149A1 VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US20080042149A1
公开(公告)日：2008-02-21
申请号：US11692568
申请日：2007-03-28
申请人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
发明人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

2. 发明申请

US20110033965A1 VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US20110033965A1
公开(公告)日：2011-02-10
申请号：US12909204
申请日：2010-10-21
申请人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
发明人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
IPC分类号： H01L33/44
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

3. 发明申请

US20080048206A1 VERTICAL GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：立式氮化镓系发光二极管及其制造方法
公开(公告)号：US20080048206A1
公开(公告)日：2008-02-28
申请号：US11742818
申请日：2007-05-01
申请人： Su Yeol LEE , Bang Won OH , Doo Go BAIK , Tae Sung JANG , Jong Gun WOO , Seok Beom CHOI , Sang Ho YOON , Dong Woo KIM , In Tae YEO
发明人： Su Yeol LEE , Bang Won OH , Doo Go BAIK , Tae Sung JANG , Jong Gun WOO , Seok Beom CHOI , Sang Ho YOON , Dong Woo KIM , In Tae YEO
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/387 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.
摘要翻译：制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

4. 发明申请

US20110053298A1 VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20110053298A1
公开(公告)日：2011-03-03
申请号：US12909297
申请日：2010-10-21
申请人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
发明人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
IPC分类号： H01L33/22 , H01L33/48
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

5. 发明申请

US20090311817A1 VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US20090311817A1
公开(公告)日：2009-12-17
申请号：US12544868
申请日：2009-08-20
申请人： Sang Ho YOON , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho YOON , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

6. 发明申请

US20090026478A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20090026478A1
公开(公告)日：2009-01-29
申请号：US12177517
申请日：2008-07-22
申请人： Sang Ho YOON , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho YOON , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/145 , H01L33/405
摘要： There is provided a semiconductor light emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. A semiconductor light emitting device according to an aspect of the invention includes: a substrate, a reflective electrode, a first conductivity semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked. Here, the reflective electrode includes; a first reflective layer provided on the substrate and including a conductive reflective material reflecting light generated from the active layer; and a second reflective layer provided on the first reflective layer, including one or more dielectric portions reflecting light generated from the active layer, and one or more contact holes filled with a conductive filler to electrically connect the first conductivity type semiconductor layer and the first reflective layer, and having a greater thickness than a wavelength of the generated light.
摘要翻译：提供了具有优异的光提取效率的半导体发光器件，以通过增加反射层的总反射率来有效地反射移入器件的光。根据本发明的一个方面的半导体发光器件包括：依次堆叠的衬底，反射电极，第一导电半导体层，有源层和第二导电类型半导体层。这里，反射电极包括：第一反射层，设置在所述基板上，并且包括反射从所述有源层产生的光的导电反射材料; 以及设置在所述第一反射层上的第二反射层，包括反射从所述有源层产生的光的一个或多个介电部分和填充有导电填料的一个或多个接触孔，以将所述第一导电类型半导体层和所述第一反射层并且具有比所产生的光的波长更大的厚度。

7. 发明申请

US20200174567A1 AUGMENTING THE FUNCTIONALITY OF NON-DIGITAL OBJECTS USING A DIGITAL GLOVE 审中-公开
公开(公告)号：US20200174567A1
公开(公告)日：2020-06-04
申请号：US16207973
申请日：2018-12-03
申请人： Christian KLEIN , Andrew Stuart GLASS , Sang Ho YOON
发明人： Christian KLEIN , Andrew Stuart GLASS , Sang Ho YOON
IPC分类号： G06F3/01 , G06N20/00 , G06F3/0484 , G06F3/0354
摘要： The disclosed technologies address technical problems, including improving human-computer interaction, by augmenting the functionality provided by non-digital objects using a digital glove. To provide this functionality, a machine learning model is trained using sensor data generated by sensors in a digital glove and data generated by a user input device while the digital glove is utilized to manipulate an object like a user input device. Once trained, the machine learning model can take sensor data generated by a digital glove while manipulating a non-digital object and generate virtual user input device data that can be utilized to control a host computer. A digital glove can also be utilized to perform selection operations using non-digital objects when pressure data generated by one or more of the pressure sensors in the digital glove indicates that pressure was exerted at a finger of the digital glove in excess of a threshold value.

8. 发明申请

US20200174566A1 AUGMENTING THE FUNCTIONALITY OF USER INPUT DEVICES USING A DIGITAL GLOVE 审中-公开
公开(公告)号：US20200174566A1
公开(公告)日：2020-06-04
申请号：US16207892
申请日：2018-12-03
申请人： Christian KLEIN , Andrew Stuart GLASS , Sang Ho YOON
发明人： Christian KLEIN , Andrew Stuart GLASS , Sang Ho YOON
IPC分类号： G06F3/01 , G06F3/0488 , G06F3/0354 , G06F3/0484
摘要： The disclosed technologies address various technical problems, including improving human-computer interaction, by augmenting the functionality provided by user input devices using a digital glove. For example, a digital glove can be utilized to provide pressure sensitivity for non-pressure sensitive touchscreen devices, attribute input made with a digital pen to a user wearing the digital glove, augment the functionality provided by mice and other types of handheld user input devices, augment the functionality provided gaze tracking systems, improve camera-based motion tracking systems, and to augment the functionality provided by speech recognition systems.

9. 发明申请

US20120230033A1 LIGHT EMITTING DIODE (LED) MODULE 有权
标题翻译：发光二极管（LED）模块
公开(公告)号：US20120230033A1
公开(公告)日：2012-09-13
申请号：US13408262
申请日：2012-02-29
申请人： Sang Ho YOON , Hyung Jin KIM
发明人： Sang Ho YOON , Hyung Jin KIM
IPC分类号： F21V29/00
CPC分类号： F21K9/00 , F21V5/007 , F21V17/04 , F21V17/06 , F21V19/003 , F21V23/002 , F21V27/02 , F21V29/89 , F21V31/005 , F21W2131/103 , F21Y2105/10 , F21Y2115/10
摘要： A light emitting diode (LED) module is provided. The LED module includes a substrate on which an LED is mounted; a heat radiation unit configured to include an insertion hole for passage of a power supply cable that supplies power to the substrate; a lens plate configured to include a lens corresponding to the LED and to cover the substrate; a rubber seal configured to be disposed between the heat radiation unit and the lens plate; and a waterproof structure configured to be inserted in the insertion hole and to include a through hole to receive the power supply cable, wherein the substrate is received in an inner space constructed as the lens plate, the rubber seal, and the heat radiation unit are connected, and the inner space has a waterproof structure.
摘要翻译：提供了一种发光二极管（LED）模块。 LED模块包括其上安装有LED的基板; 散热单元，其构造成包括用于通过供电电缆的插入孔，所述电源电缆向所述基板供电; 透镜板，被配置为包括对应于所述LED并且覆盖所述基板的透镜; 配置为设置在所述散热单元和所述透镜板之间的橡胶密封件; 以及防水结构，其被配置为插入到所述插入孔中并且包括用于容纳所述电源电缆的通孔，其中所述基板被接收在构造为所述透镜板的内部空间中，所述橡胶密封件和所述散热单元是内部空间具有防水结构。

10. 发明申请

US20120051066A1 OPTICAL LENS, LED MODULE HAVING THE OPTICAL LENS, AND LIGHTING APPARATUS HAVING THE LED MODULE 有权
标题翻译：光学透镜，具有光学透镜的LED模块和具有LED模块的照明设备
公开(公告)号：US20120051066A1
公开(公告)日：2012-03-01
申请号：US13181998
申请日：2011-07-13
申请人： Won Hoe KOO , Sang Ho YOON , Hyun Jung KIM , Ki Un LEE , Hyung Jin KIM , Kyeong Ik MIN
发明人： Won Hoe KOO , Sang Ho YOON , Hyun Jung KIM , Ki Un LEE , Hyung Jin KIM , Kyeong Ik MIN
IPC分类号： F21V5/04
CPC分类号： F21V5/00 , F21V5/04 , F21V5/08 , F21W2131/103 , F21Y2115/10 , G02B3/08 , G02B19/0028 , G02B19/0061
摘要： An optical lens includes: a lens body having an outer surface extending in a longitudinal direction (a first direction) and formed to be symmetrical in a lateral direction (a second direction); and a cavity formed at a lower portion of the lens body and having inner side faces asymmetrical in the longitudinal direction.
摘要翻译：光学透镜包括：透镜体，其具有在纵向（第一方向）上延伸并且形成为沿横向（第二方向）对称的外表面; 以及形成在透镜体的下部并且具有在纵向方向上不对称的内侧面的空腔。

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