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1. 发明授权

US08546154B2 Apparatus and method to inspect defect of semiconductor device 失效
标题翻译：检测半导体器件缺陷的装置和方法
公开(公告)号：US08546154B2
公开(公告)日：2013-10-01
申请号：US13226757
申请日：2011-09-07
申请人： Ji-Young Shin , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
发明人： Ji-Young Shin , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
IPC分类号： G01R31/36 , H01L21/66
CPC分类号： H01J37/241 , H01J37/265 , H01J37/28 , H01L22/12
摘要： An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image.
摘要翻译：检查基板缺陷的装置和方法。由于衬底的底层的凹部比顶层的突起更暗，所以下层的二次电子信号（SEM）的值与顶层的值的比可以增加到改善用于检查下层缺陷的图案图像。可以设置照射电子束的几个条件，并且可以在这种条件下扫描图案。可以根据条件生成二次电子信号，并将其转换为图像数据以显示各种图案图像。关于图像的扫描信息可以与基板上的位置信息一起存储。可以计算关于图案图像的每个扫描信息以生成新的集成图像。

2. 发明授权

US08153339B2 Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask 有权
标题翻译：使用该掩模的半导体器件和薄膜晶体管阵列面板的掩模和制造方法
公开(公告)号：US08153339B2
公开(公告)日：2012-04-10
申请号：US12823030
申请日：2010-06-24
申请人： Jong-An Kim , Ji-Haeng Han , Young-Bae Jung , Bae-Hyoun Jung
发明人： Jong-An Kim , Ji-Haeng Han , Young-Bae Jung , Bae-Hyoun Jung
IPC分类号： G03F1/00
CPC分类号： H01L27/1288 , G03F1/28 , G03F1/32 , H01L27/1214 , H01L27/14689 , H01L51/56
摘要： An exposure mask is provided, which includes: a light blocking opaque area blocking incident light; a translucent area; and a transparent area passing the most of incident light, wherein the translucent area generates the phase differences in the range of about −70° to about +70°.
摘要翻译：提供曝光掩模，其包括：阻挡入射光的遮光不透明区域; 半透明的区域; 以及通过大部分入射光的透明区域，其中半透明区域产生在-70°至约+ 70°范围内的相位差。

3. 发明授权

US08050488B2 Method of analyzing a wafer sample 失效
标题翻译：分析晶圆样品的方法
公开(公告)号：US08050488B2
公开(公告)日：2011-11-01
申请号：US12041127
申请日：2008-03-03
申请人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
发明人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G01N21/95607 , G06T2207/10061 , G06T2207/30148
摘要： In a method of analyzing a wafer sample, a first defect of a photoresist pattern on the wafer sample having shot regions exposed with related exposure conditions is detected. A first portion of the pattern includes the shot regions exposed with an exposure condition corresponding to a reference exposure condition and a tolerance error range of the reference exposure condition. The first defect repeatedly existing in at least two of the shot regions in a second portion of the pattern is set up as a second defect of the pattern. A first reference image displaying the second defect is obtained. The first defect of the shot regions in the first portion corresponding to the second defect is set up as a third defect corresponding to weak points of the pattern. The exposure conditions of the shot region having no weak points are set up as an exposure margin of an exposure process.
摘要翻译：在分析晶片样品的方法中，检测具有用相关曝光条件曝光的拍摄区域的晶片样品上的光致抗蚀剂图案的第一缺陷。图案的第一部分包括用与参考曝光条件相对应的曝光条件和参考曝光条件的公差误差范围曝光的拍摄区域。在图案的第二部分中的至少两个拍摄区域中重复存在的第一缺陷被设置为图案的第二缺陷。获得显示第二缺陷的第一参考图像。对应于第二缺陷的第一部分中的拍摄区域的第一缺陷被设置为对应于图案的弱点的第三缺陷。没有弱点的照射区域的曝光条件被设置为曝光处理的曝光余量。

4. 发明授权

US07804591B2 Wafer inspecting method 有权
标题翻译：晶圆检查方法
公开(公告)号：US07804591B2
公开(公告)日：2010-09-28
申请号：US11693356
申请日：2007-03-29
申请人： Ji-Hye Kim , Yu-Sin Yang , Jong-An Kim , Moon-Shik Kang , Ji-Young Shin
发明人： Ji-Hye Kim , Yu-Sin Yang , Jong-An Kim , Moon-Shik Kang , Ji-Young Shin
IPC分类号： G01N21/00
CPC分类号： G01N21/95607 , G01N21/9501 , G01N2021/8864 , G01N2021/8867 , G01N2021/8887
摘要： A wafer inspecting method including the steps of: multi-scanning a pattern image of a unit inspection region in a normal state and a pattern image of a unit inspection region to be inspected, respectively, using different inspection conditions; comparing the multi-scanned pattern images in the normal state with the multi-scanned pattern images to be inspected obtained by the same inspection conditions, and storing differences between the pattern images as difference images; generating a discrimination difference image by calculating a balance between the stored difference images; and discriminating a defect from noise by using the discrimination difference image.
摘要翻译：一种晶片检查方法，包括以下步骤：使用不同的检查条件分别对正常状态下的单位检查区域的图案图像和要检查的单位检查区域的图案图像进行多次扫描; 将正常状态下的多扫描图案图像与通过相同检查条件获得的待检查的多扫描图案图像进行比较，并且将图案图像之间的差异存储为差分图像; 通过计算所存储的差分图像之间的平衡来产生鉴别差异图像; 以及通过使用辨别差异图像来区分缺陷和噪声。

5. 发明授权

US07767506B2 Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask 有权
标题翻译：使用该掩模的半导体器件和薄膜晶体管阵列面板的掩模和制造方法
公开(公告)号：US07767506B2
公开(公告)日：2010-08-03
申请号：US12258228
申请日：2008-10-24
申请人： Jong-An Kim , Ji-Haeng Han , Young-Bae Jung , Bae-Hyoun Jung
发明人： Jong-An Kim , Ji-Haeng Han , Young-Bae Jung , Bae-Hyoun Jung
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1288 , G03F1/28 , G03F1/32 , H01L27/1214 , H01L27/14689 , H01L51/56
摘要： An exposure mask is provided, which includes: a light blocking opaque area blocking incident light; a translucent area; and a transparent area passing the most of incident light, wherein the translucent area generates the phase differences in the range of about −70° to about +70°.
摘要翻译：提供曝光掩模，其包括：阻挡入射光的遮光不透明区域; 半透明的区域; 以及通过大部分入射光的透明区域，其中半透明区域产生在-70°至约+ 70°范围内的相位差。

6. 发明申请

US20140161716A1 METHOD FOR PREPARING POROUS ALUMINA 有权
标题翻译：制备多孔铝的方法
公开(公告)号：US20140161716A1
公开(公告)日：2014-06-12
申请号：US14232987
申请日：2012-07-12
申请人： Jeong Kwon Suh , Beom Sik Kim , You In Park , Hong Chan Ahn , Yun Ho Jeong , Kyung Ki Park , Hak Jun Kim , Jong An Kim , Ji Sook Hong , Won Young Lee , Hyo Sang Yun
发明人： Jeong Kwon Suh , Beom Sik Kim , You In Park , Hong Chan Ahn , Yun Ho Jeong , Kyung Ki Park , Hak Jun Kim , Jong An Kim , Ji Sook Hong , Won Young Lee , Hyo Sang Yun
IPC分类号： C01F7/30
CPC分类号： C01F7/30 , B01J20/08 , B01J20/28004 , B01J20/28076 , B01J21/04 , B01J35/1019 , B01J35/1042 , B01J35/1047 , B01J35/1061 , B01J37/0009 , B01J37/036 , B01J37/10 , B82Y30/00 , C01F7/34 , C01F7/448 , C01P2002/60 , C01P2004/04 , C01P2004/52 , C01P2004/64 , C01P2006/14
摘要： The present invention relates to a method for preparing a porous alumina which may be suitably used as a catalyst carrier, an adsorbent, and various surface coating agents and has a boehmite or pseudoboehmite structure having a fine and uniform particle size distribution and a large pore volume.
摘要翻译：本发明涉及一种多孔氧化铝的制备方法，该多孔氧化铝可适当地用作催化剂载体，吸附剂和各种表面涂层剂，并且具有具有细小且均匀的粒度分布和较大孔体积的勃姆石或假勃姆石结构。

7. 发明申请

US20120080597A1 APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE 失效
标题翻译：检测半导体器件缺陷的装置和方法
公开(公告)号：US20120080597A1
公开(公告)日：2012-04-05
申请号：US13226757
申请日：2011-09-07
申请人： Ji-Young SHIN , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
发明人： Ji-Young SHIN , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
IPC分类号： G01N23/22
CPC分类号： H01J37/241 , H01J37/265 , H01J37/28 , H01L22/12
摘要： An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image.
摘要翻译：检查基板缺陷的装置和方法。由于衬底的底层的凹部比顶层的突起更暗，所以下层的二次电子信号（SEM）的值与顶层的值的比可以增加到改善用于检查下层缺陷的图案图像。可以设置照射电子束的几个条件，并且可以在这种条件下扫描图案。可以根据条件生成二次电子信号，并将其转换为图像数据以显示各种图案图像。关于图像的扫描信息可以与基板上的位置信息一起存储。可以计算关于图案图像的每个扫描信息以生成新的集成图像。

8. 发明授权

US08126258B2 Method of detecting defects in patterns on semiconductor substrate by comparing second image with reference image after acquiring second image from first image and apparatus for performing the same 有权
标题翻译：通过在从第一图像获取第二图像之后将第二图像与参考图像进行比较来检测半导体基板上的图案中的缺陷的方法和用于执行其的装置
公开(公告)号：US08126258B2
公开(公告)日：2012-02-28
申请号：US11979776
申请日：2007-11-08
申请人： Yu-Sin Yang , Chung-Sam Jun , Jong-An Kim , Moon-Shik Kang , Ji-Hye Kim
发明人： Yu-Sin Yang , Chung-Sam Jun , Jong-An Kim , Moon-Shik Kang , Ji-Hye Kim
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T2207/10056 , G06T2207/20056 , G06T2207/30148
摘要： In a method of detecting defects in patterns and an apparatus for performing the method, a first image of a detection region on a semiconductor substrate may be acquired. A second image may be acquired from the first image by performing a Fourier transform and performing a low pass filtering. The second image may be compared with a reference image so that the defects of the detection region are detected. Existence of the defect of the second image is determined using a relation value between a grey level of each of pixels of the second image and the reference image, respectively. When a defect exists, the horizontal and the vertical positions of the pixel where the relation value is minimum are combined to determine the position of the defect.
摘要翻译：在检测图案中的缺陷的方法和执行该方法的装置中，可以获取半导体衬底上的检测区域的第一图像。可以通过执行傅里叶变换并执行低通滤波从第一图像获取第二图像。可以将第二图像与参考图像进行比较，从而检测出检测区域的缺陷。使用第二图像的每个像素的灰度级与参考图像之间的关系值来确定第二图像的缺陷的存在。当存在缺陷时，组合关系值最小的像素的水平和垂直位置以确定缺陷的位置。

9. 发明授权

US08055056B2 Method of detecting defects of patterns on a semiconductor substrate and apparatus for performing the same 有权
标题翻译：检测半导体衬底上的图案缺陷的方法及其执行方法
公开(公告)号：US08055056B2
公开(公告)日：2011-11-08
申请号：US11934972
申请日：2007-11-05
申请人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
发明人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
IPC分类号： G06K9/00 , G01N21/00
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： In a method of detecting defects of patterns on a semiconductor substrate and an apparatus for performing the method information on positions of reference defects influencing an operation of a circuit including the patterns when the patterns are formed on the semiconductor substrate is acquired in advance. Preliminary defects of the patterns formed on the semiconductor substrate are detected. Positions of the preliminary defects of the patterns are compared with positions of the reference defects. The preliminary defects having the positions substantially the same as the positions of the reference defects are set to be defects of the patterns so that the actual defects are detected.
摘要翻译：在半导体衬底上检测图案的缺陷的方法以及当在半导体衬底上形成图案时影响包括图案的电路的工作的参考缺陷的位置执行方法信息的装置的方法被预先获取。检测在半导体衬底上形成的图案的初步缺陷。将模式的初步缺陷的位置与参考缺陷的位置进行比较。具有与参考缺陷的位置基本相同的位置的初步缺陷被设置为图案的缺陷，从而检测到实际的缺陷。

10. 发明申请

US20100136717A1 APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE 失效
标题翻译：检测半导体器件缺陷的装置和方法
公开(公告)号：US20100136717A1
公开(公告)日：2010-06-03
申请号：US12627222
申请日：2009-11-30
申请人： Ji-Young SHIN , Young-Nam Kim , Jong-An KIM , Hyung-Suk CHO , Yu-Sin YANG
发明人： Ji-Young SHIN , Young-Nam Kim , Jong-An KIM , Hyung-Suk CHO , Yu-Sin YANG
IPC分类号： H01L21/66 , G01N23/00 , G06F19/00
CPC分类号： H01J37/241 , H01J37/265 , H01J37/28 , H01L22/12
摘要： An apparatus and method to inspect a defect of a semiconductor device. The amount of secondary electrons generated due to a scanning electron microscope (SEM) may depend on the topology of a pattern of a semiconductor substrate. The amount of secondary electrons emitted from a recess of an under layer is far smaller than that of secondary electrons emitted from a projection of a top layer. Since the recess is darker than the projection, a ratio of a value of a secondary electron signal of the under layer to a value of a secondary electron signal of the top layer may be increased in order to improve a pattern image used to inspect a defect in the under layer. To do this, a plurality of conditions under which electron beams (e-beams) are irradiated may be set, at least two may be selected out of the set conditions, and the pattern may be scanned under the selected conditions. Thus, secondary electron signals may be generated according to the respective conditions and converted into image data so that various pattern images may be displayed on a monitor. Scan information on the pattern images may be automatically stored in a computer storage along with positional information on a predetermined portion of the semiconductor substrate. When calculation conditions are input to a computer, each of scan information on the pattern images may be calculated to generate a new integrated pattern image.
摘要翻译：一种用于检查半导体器件的缺陷的装置和方法。由扫描电子显微镜（SEM）产生的二次电子量可能取决于半导体衬底图案的拓扑结构。从下层的凹部发射的二次电子的量远远小于从顶层的投影发射的二次电子的量。由于凹部比投影更暗，所以可以增加下层的二次电子信号的值与顶层的二次电子信号的值的比例，以便改善用于检查缺陷的图案图像在下层。为此，可以设置照射电子束（电子束）的多个条件，可以从设定条件中选择至少两个，并且可以在所选择的条件下扫描图案。因此，可以根据各自的条件生成二次电子信号，并将其转换为图像数据，从而可以在监视器上显示各种图案图像。关于图案图像的扫描信息可以与位于半导体基板的预定部分上的位置信息一起自动存储在计算机存储器中。当将计算条件输入到计算机时，可以计算每个关于图案图像的扫描信息，以生成新的集成图案图像。

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