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    • 1. 发明授权
    • Field emitters of wide-bandgap materials and methods for their
fabrication
    • 宽带隙材料的场发射体及其制造方法
    • US5713775A
    • 1998-02-03
    • US432848
    • 1995-05-02
    • Michael W. GeisJonathan C. TwichellTheodore M. LyszczarzNickolay N. Efremow
    • Michael W. GeisJonathan C. TwichellTheodore M. LyszczarzNickolay N. Efremow
    • H01J1/304H01J9/02H01J1/30H01J9/18
    • H01J9/025H01J1/3042H01J2201/30457
    • Improved field-emission devices are based on composing the back contact to the emitter material such that electron-injection efficiency into the emitter material is enhanced. Alteration of the emitter material structure near the contact or geometric field enhancement due to contact morphology gives rise to the improved injection efficiency. The devices are able to emit electrons at high current density and lower applied potential differences and temperatures than previously achieved. Wide-bandgap emitter materials without shallow donors benefit from this approach. The emission characteristics of diamond substitutionally doped with nitrogen, having a favorable emitter/vacuum band structure but being limited by the efficiency of electron injection into it, show especial improvement in the context of the invention. The injection-enhancing contacts can be created by combining the emitter material with an appropriate metal compound and annealing or by conventional dry anisotropic etching or ion bombardment techniques.
    • 改进的场致发射器件基于构成与发射极材料的背接触,使得增加到发射极材料中的电子注入效率。 由接触形态引起的接触或几何场增强附近的发射极材料结构的改变提高了注入效率的提高。 器件能够以高电流密度发射电子,并且能够比以前实现的更低的施加电位差和温度。 没有浅供体的宽带隙发射体材料受益于这种方法。 替代地掺杂有氮的金刚石的发射特性具有良好的发射极/真空带结构但被电子注入的效率所限制,在本发明的上下文中显示出特别的改进。 注入增强触点可以通过将发射极材料与适当的金属化合物组合并进行退火或通过常规的干各向异性蚀刻或离子轰击技术来产生。
    • 9. 发明授权
    • Linearized optical sampler
    • 线性化光学取样器
    • US6028424A
    • 2000-02-22
    • US286950
    • 1999-04-06
    • Jonathan C. TwichellRoger J. Helkey
    • Jonathan C. TwichellRoger J. Helkey
    • G02F1/21G11C13/04G02F1/035
    • G11C13/047G02F2001/212
    • A linearized optical sampler is described. The optical sampler includes an electro-optic modulator having an optical signal input, an electrical signal input, and at least two optical signal outputs that generate at least two modulated optical signals. The optical sampler also includes at least two detectors each of which being optically coupled to a respective one of the at least two modulated optical signals. Each detector generates an electrical signal in response to an optical intensity of the respective one of the at least two modulated optical signals. The optical sampler also includes a signal processor electrically connected to each of the at least two detectors. The signal processor applies an inverse transform of the modulator transfer function. The signal processor also generates an electrical signal from the electrical signals generated by the detectors and from the inverse transform that is linearly related to an RF signal electrically that is coupled to the electrical signal input.
    • 描述线性化光学取样器。 光采样器包括具有光信号输入,电信号输入和至少两个产生至少两个调制光信号的光信号输出的电光调制器。 光采样器还包括至少两个检测器,每个检测器光耦合到至少两个调制光信号中的相应一个。 每个检测器响应于至少两个调制光信号中的相应一个的光强度而产生电信号。 光采样器还包括电连接到至少两个检测器中的每一个的信号处理器。 信号处理器应用调制器传递函数的逆变换。 信号处理器还从由检测器产生的电信号以及与电耦合到电信号输入的RF信号线性相关的逆变换产生电信号。
    • 10. 发明授权
    • Field emmitters of wide-bandgap materials
    • 宽带隙材料的场发射器
    • US5990604A
    • 1999-11-23
    • US17361
    • 1998-02-02
    • Michael W. GeisJonathan C. TwichellTheodore M. LyszczarzNickolay N. Efremow
    • Michael W. GeisJonathan C. TwichellTheodore M. LyszczarzNickolay N. Efremow
    • H01J1/304H01J9/02H01J1/30H01J19/24
    • H01J9/025H01J1/3042H01J2201/30457
    • Improved field-emission devices are based on composing the back contact to the emitter material such that electron-injection efficiency into the emitter material is enhanced. Alteration of the emitter material structure near the contact or geometric field enhancement due to contact morphology gives rise to the improved injection efficiency. The devices are able to emit electrons at high current density and lower applied potential differences and temperatures than previously achieved. Wide-bandgap emitter materials without shallow donors benefit from this approach. The emission characteristics of diamond substitutionally doped with nitrogen, having a favorable emitter/vacuum band structure but being limited by the efficiency of electron injection into it, show especial improvement in the context of the invention. The injection-enhancing contacts can be created by combining the emitter material with an appropriate metal compound and annealing or by conventional dry anisotropic etching or ion bombardment techniques.
    • 改进的场致发射器件基于构成与发射极材料的背接触,使得增加到发射极材料中的电子注入效率。 由接触形态引起的接触或几何场增强附近的发射极材料结构的改变提高了注入效率的提高。 器件能够以高电流密度发射电子,并且能够比以前实现的更低的施加电位差和温度。 没有浅供体的宽带隙发射体材料受益于这种方法。 替代地掺杂有氮的金刚石的发射特性具有良好的发射极/真空带结构但被电子注入的效率所限制,在本发明的上下文中显示出特别的改进。 注入增强触点可以通过将发射极材料与适当的金属化合物组合并进行退火或通过常规的干各向异性蚀刻或离子轰击技术来产生。