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1. 发明授权

US5713775A Field emitters of wide-bandgap materials and methods for their fabrication 失效
标题翻译：宽带隙材料的场发射体及其制造方法
公开(公告)号：US5713775A
公开(公告)日：1998-02-03
申请号：US432848
申请日：1995-05-02
申请人： Michael W. Geis , Jonathan C. Twichell , Theodore M. Lyszczarz , Nickolay N. Efremow
发明人： Michael W. Geis , Jonathan C. Twichell , Theodore M. Lyszczarz , Nickolay N. Efremow
IPC分类号： H01J1/304 , H01J9/02 , H01J1/30 , H01J9/18
CPC分类号： H01J9/025 , H01J1/3042 , H01J2201/30457
摘要： Improved field-emission devices are based on composing the back contact to the emitter material such that electron-injection efficiency into the emitter material is enhanced. Alteration of the emitter material structure near the contact or geometric field enhancement due to contact morphology gives rise to the improved injection efficiency. The devices are able to emit electrons at high current density and lower applied potential differences and temperatures than previously achieved. Wide-bandgap emitter materials without shallow donors benefit from this approach. The emission characteristics of diamond substitutionally doped with nitrogen, having a favorable emitter/vacuum band structure but being limited by the efficiency of electron injection into it, show especial improvement in the context of the invention. The injection-enhancing contacts can be created by combining the emitter material with an appropriate metal compound and annealing or by conventional dry anisotropic etching or ion bombardment techniques.
摘要翻译：改进的场致发射器件基于构成与发射极材料的背接触，使得增加到发射极材料中的电子注入效率。由接触形态引起的接触或几何场增强附近的发射极材料结构的改变提高了注入效率的提高。器件能够以高电流密度发射电子，并且能够比以前实现的更低的施加电位差和温度。没有浅供体的宽带隙发射体材料受益于这种方法。替代地掺杂有氮的金刚石的发射特性具有良好的发射极/真空带结构但被电子注入的效率所限制，在本发明的上下文中显示出特别的改进。注入增强触点可以通过将发射极材料与适当的金属化合物组合并进行退火或通过常规的干各向异性蚀刻或离子轰击技术来产生。

2. 发明授权

US5990604A Field emmitters of wide-bandgap materials 失效
标题翻译：宽带隙材料的场发射器
公开(公告)号：US5990604A
公开(公告)日：1999-11-23
申请号：US17361
申请日：1998-02-02
申请人： Michael W. Geis , Jonathan C. Twichell , Theodore M. Lyszczarz , Nickolay N. Efremow
发明人： Michael W. Geis , Jonathan C. Twichell , Theodore M. Lyszczarz , Nickolay N. Efremow
IPC分类号： H01J1/304 , H01J9/02 , H01J1/30 , H01J19/24
CPC分类号： H01J9/025 , H01J1/3042 , H01J2201/30457
摘要： Improved field-emission devices are based on composing the back contact to the emitter material such that electron-injection efficiency into the emitter material is enhanced. Alteration of the emitter material structure near the contact or geometric field enhancement due to contact morphology gives rise to the improved injection efficiency. The devices are able to emit electrons at high current density and lower applied potential differences and temperatures than previously achieved. Wide-bandgap emitter materials without shallow donors benefit from this approach. The emission characteristics of diamond substitutionally doped with nitrogen, having a favorable emitter/vacuum band structure but being limited by the efficiency of electron injection into it, show especial improvement in the context of the invention. The injection-enhancing contacts can be created by combining the emitter material with an appropriate metal compound and annealing or by conventional dry anisotropic etching or ion bombardment techniques.
摘要翻译：改进的场致发射器件基于构成与发射极材料的背接触，使得增加到发射极材料中的电子注入效率。由接触形态引起的接触或几何场增强附近的发射极材料结构的改变提高了注入效率的提高。器件能够以高电流密度发射电子，并且能够比以前实现的更低的施加电位差和温度。没有浅供体的宽带隙发射体材料受益于这种方法。替代地掺杂有氮的金刚石的发射特性具有良好的发射极/真空带结构但被电子注入的效率所限制，在本发明的上下文中显示出特别的改进。注入增强触点可以通过将发射极材料与适当的金属化合物组合并进行退火或通过常规的干各向异性蚀刻或离子轰击技术来产生。

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