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    • 1. 发明申请
    • Apparatus and Methods for Determining Overlay and Uses of Same
    • 用于确定叠加和使用的装置和方法
    • US20100005442A1
    • 2010-01-07
    • US12560229
    • 2009-09-15
    • Mark GhinovkerMichael E. AdelJorge PoplawskiJoel L. Seligson
    • Mark GhinovkerMichael E. AdelJorge PoplawskiJoel L. Seligson
    • G06F17/50
    • G06F17/5068G03F7/70633G06F2217/12Y02P90/265
    • Disclosed are techniques and apparatus are provided for determining overlay error or pattern placement error (PPE) across the field of a scanner which is used to pattern a sample, such as a semiconductor wafer or device. This determination is performed in-line on the product wafer or device. That is, the targets on which overlay or PPE measurements are performed are provided on the product wafer or device itself. The targets are either distributed across the field by placing the targets within the active area or by distributing the targets along the streets (the strips or scribe areas) which are between the dies of a field. The resulting overlay or PPE that is obtained from targets distributed across the field may then be used in a number of ways to improve the fabrication process for producing the sample. For instance, the resulting overlay or PPE may be used to more accurately predict device performance and yield, more accurately correct a deviating photolithography scanning tool, or determine wafer lot disposition.
    • 公开了提供用于确定扫描仪领域的重叠误差或图案布置误差(PPE)的技术和装置,其用于对样品(例如半导体晶片或器件)进行图案化。 该确定在产品晶片或器件上在线执行。 也就是说,在产品晶片或器件本身上提供执行覆盖或PPE测量的目标。 目标是通过将目标放置在活动区域​​内或通过在场的模具之间的街道(条带或划线区域)上分布目标来分布在场上。 然后可以以多种方式使用从分布在场上的目标获得的所得覆盖物或PPE,以改进用于生产样品的制造过程。 例如,所得覆盖层或PPE可用于更准确地预测设备性能和产量,更精确地校正偏离的光刻扫描工具,或确定晶片批次布置。
    • 2. 发明授权
    • Imaging apparatus which includes a light-valve array having
electrostatically deflectable elements
    • 成像设备包括具有静电偏转元件的光阀阵列
    • US4805038A
    • 1989-02-14
    • US79382
    • 1987-07-30
    • Joel L. Seligson
    • Joel L. Seligson
    • B41J2/447G02B6/04G02B6/35H04N1/036G02B6/26G02B26/00H04N3/02
    • H04N1/036B41J2/45G02B26/103G02B6/3502G02B6/3552G02B6/3566G02B6/357
    • Imaging apparatus is disclosed for exposing a recording medium to produce an image in accordance with information contained in an electrical signal. The apparatus comprises a light source, optical means for imaging light onto the recording medium, and a light-valve array to control the light reaching selected areas of the recording medium. In order to provide an improved means for controlling the light, the light-valve array is comprised of a plurality of electrostatically deflectable elements each of which contains a transmitter waveguide for transmitting light from the source to a receptor waveguide. The elements can be deflected from a first position in which the transmitter and receptor waveguides are axially aligned for transmitting light therethrough to a second position in which no light can be transmitted from the transmitter waveguides to the receptor waveguides; each of the elements is selectively deflectable in response to an information signal. Light from the receptor waveguides is imaged onto the recording medium.
    • 公开了用于使记录介质曝光以根据包含在电信号中的信息产生图像的成像设备。 该装置包括光源,用于将光成像到记录介质上的光学装置,以及用于控制到达记录介质的选定区域的光的光阀阵列。 为了提供用于控制光的改进装置,光阀阵列由多个静电偏转元件组成,每个元件包含用于将光从源传输到接收波导的发射器波导。 元件可以从其中发射器和接收器波导轴向对准的第一位置偏转,以将光透过到第二位置,在第二位置,其中光不能从发射器波导传输到接收器波导; 每个元件响应于信息信号而选择性地偏转。 来自接收器波导的光被成像到记录介质上。
    • 5. 发明授权
    • Use of overlay diagnostics for enhanced automatic process control
    • 使用覆盖诊断功能进行增强的自动过程控制
    • US07111256B2
    • 2006-09-19
    • US10438963
    • 2003-05-14
    • Joel L. SeligsonMark GhinovkerJohn RobinsonPavel IziksonMichael E. AdelBoris SimkinDavid TulipmanVladimir Levinski
    • Joel L. SeligsonMark GhinovkerJohn RobinsonPavel IziksonMichael E. AdelBoris SimkinDavid TulipmanVladimir Levinski
    • G06F17/50
    • G03F7/705G03F7/70516G03F7/70633
    • Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.
    • 公开了分析覆盖目标质量的方法和装置。 在一个实施例中,公开了一种从覆盖目标提取数据的方法。 首先,提供覆盖目标的图像信息或一个或多个强度信号。 通过分析覆盖目标的图像信息或强度信号,从覆盖目标获得重叠错误。 通过分析覆盖目标的图像信息或强度信号也可以从覆盖目标获得系统误差度量。 例如,系统误差可以指示覆盖目标的一个或多个部分的不对称度量。 通过将统计模型应用于覆盖目标的图像信息或强度信号,从覆盖目标进一步获得噪声度量。 噪声度量表示与覆盖目标相关联的噪声,例如粒状背景。 在其他实施例中,然后基于系统误差度量和/或噪声度量以及覆盖数据来执行覆盖和/或步进分析程序。
    • 6. 发明授权
    • Use of overlay diagnostics for enhanced automatic process control
    • 使用覆盖诊断功能进行增强的自动过程控制
    • US06928628B2
    • 2005-08-09
    • US10438962
    • 2003-05-14
    • Joel L. SeligsonMark GhinovkerJohn RobinsonPavel IziksonMichael E. AdelBoris SimkinDavid Tulipman
    • Joel L. SeligsonMark GhinovkerJohn RobinsonPavel IziksonMichael E. AdelBoris SimkinDavid Tulipman
    • G03F7/20G06F17/50G06K9/00H01L21/66
    • G03F7/705G03F7/70516G03F7/70633
    • Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.
    • 公开了分析覆盖目标质量的方法和装置。 在一个实施例中,公开了一种从覆盖目标提取数据的方法。 首先,提供覆盖目标的图像信息或一个或多个强度信号。 通过分析覆盖目标的图像信息或强度信号,从覆盖目标获得重叠错误。 通过分析覆盖目标的图像信息或强度信号也可以从覆盖目标获得系统误差度量。 例如,系统误差可以指示覆盖目标的一个或多个部分的不对称度量。 通过将统计模型应用于覆盖目标的图像信息或强度信号,从覆盖目标进一步获得噪声度量。 噪声度量表示与覆盖目标相关联的噪声,例如粒状背景。 在其他实施例中,然后基于系统误差度量和/或噪声度量以及覆盖数据来执行覆盖和/或步进分析程序。
    • 8. 发明授权
    • Apparatus and methods for determining overlay and uses of same
    • 用于确定其叠加和使用的装置和方法
    • US07876438B2
    • 2011-01-25
    • US12560229
    • 2009-09-15
    • Mark GhinovkerMichael E. AdelJorge PoplawskiJoel L. Seligson
    • Mark GhinovkerMichael E. AdelJorge PoplawskiJoel L. Seligson
    • G01B11/00G01B11/02G01B11/14G01B7/00G01B5/02G01C17/38G01R31/26
    • G06F17/5068G03F7/70633G06F2217/12Y02P90/265
    • Disclosed are techniques and apparatus are provided for determining overlay error or pattern placement error (PPE) across the field of a scanner which is used to pattern a sample, such as a semiconductor wafer or device. This determination is performed in-line on the product wafer or device. That is, the targets on which overlay or PPE measurements are performed are provided on the product wafer or device itself. The targets are either distributed across the field by placing the targets within the active area or by distributing the targets along the streets (the strips or scribe areas) which are between the dies of a field. The resulting overlay or PPE that is obtained from targets distributed across the field may then be used in a number of ways to improve the fabrication process for producing the sample. For instance, the resulting overlay or PPE may be used to more accurately predict device performance and yield, more accurately correct a deviating photolithography scanning tool, or determine wafer lot disposition.
    • 公开了提供用于确定扫描仪领域的重叠误差或图案布置误差(PPE)的技术和装置,其用于对样品(例如半导体晶片或器件)进行图案化。 该确定在产品晶片或器件上在线执行。 也就是说,在产品晶片或器件本身上提供执行覆盖或PPE测量的目标。 目标是通过将目标放置在活动区域​​内或通过在场的模具之间的街道(条带或划线区域)上分布目标来分布在场上。 然后可以以多种方式使用从分布在场上的目标获得的所得覆盖物或PPE,以改进用于生产样品的制造过程。 例如,所得覆盖层或PPE可用于更准确地预测设备性能和产量,更精确地校正偏离的光刻扫描工具,或确定晶片批次布置。
    • 9. 发明授权
    • Order selected overlay metrology
    • 订购选择重叠计量
    • US07528941B2
    • 2009-05-05
    • US11754892
    • 2007-05-29
    • Daniel KandelVladimir LevinskiMichael E. AdelJoel L. Seligson
    • Daniel KandelVladimir LevinskiMichael E. AdelJoel L. Seligson
    • G01N21/00
    • G03F7/70633
    • Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.
    • 公开了用于测量半导体靶的特性(例如覆盖)的装置和方法。 通常,在使用度量系统从目标物收集图像的同时执行顺序选择的成像和/或照明。 在一个实现中,仅在系统的成像路径中提供可调谐空间调制。 在其他实施方式中,在系统的照明和成像路径中提供可调谐的空间调制。 在具体实现中,可调谐空间调制用于以衍射级±n对并行光栅进行成像。 并排光栅可以在不同的层或相同的半导体晶片层中。 通常通过测量光栅的中心对称性之间的距离来发现结构之间的覆盖。 在本实施例中,对于给定的n(其中n是整数且不等于零)的选择,仅选择±n,并且光栅仅以这些衍射级成像。
    • 10. 发明授权
    • Continuously varying offset mark and methods of determining overlay
    • 不断变化的偏移标记和确定叠加的方法
    • US07440105B2
    • 2008-10-21
    • US11060588
    • 2005-02-16
    • Michael E. AdelJoel L. SeligsonDaniel Kandel
    • Michael E. AdelJoel L. SeligsonDaniel Kandel
    • G01B11/00H01L21/76H01L23/544
    • G03F7/70683B82Y10/00B82Y40/00G03F7/0002G03F7/70633H01L22/12
    • The present invention relates to overlay marks and methods for determining overlay error. One aspect of the present invention relates to a continuously varying offset mark. The continuously varying offset mark is a single mark that includes over laid periodic structures, which have offsets that vary as a function of position. By way of example, the periodic structures may correspond to gratings with different values of a grating characteristic such as pitch. Another aspect of the present invention relates to methods for determining overlay error from the continuously varying offset mark. The method generally includes determining the center of symmetry of the continuously varying offset mark and comparing it to the geometric center of the mark. If there is zero overlay, the center of symmetry tends to coincide with the geometric center of the mark. If overlay is non zero (e.g., misalignment between two layers), the center of symmetry is displaced from the geometric center of the mark. The displacement in conjunction with the preset gain of the continuously varying offset mark is used to calculate the overlay error.
    • 本发明涉及覆盖标记和确定覆盖误差的方法。 本发明的一个方面涉及连续变化的偏移标记。 连续变化的偏移标记是包括过度周期性结构的单个标记,其具有作为位置的函数而变化的偏移。 作为示例,周期性结构可以对应于具有诸如间距的光栅特性的不同值的光栅。 本发明的另一方面涉及用于从连续变化的偏移标记确定覆盖误差的方法。 该方法通常包括确定连续变化的偏移标记的对称中心并将其与标记的几何中心进行比较。 如果有零覆盖,则对称中心倾向于与标记的几何中心重合。 如果覆盖层不为零(例如,两层之间的未对准),则对称中心从标记的几何中心位移。 使用与连续变化的偏移标记的预设增益相结合的位移来计算重叠误差。