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1. 发明授权

US07440105B2 Continuously varying offset mark and methods of determining overlay 有权
标题翻译：不断变化的偏移标记和确定叠加的方法
公开(公告)号：US07440105B2
公开(公告)日：2008-10-21
申请号：US11060588
申请日：2005-02-16
申请人： Michael E. Adel , Joel L. Seligson , Daniel Kandel
发明人： Michael E. Adel , Joel L. Seligson , Daniel Kandel
IPC分类号： G01B11/00 , H01L21/76 , H01L23/544
CPC分类号： G03F7/70683 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/70633 , H01L22/12
摘要： The present invention relates to overlay marks and methods for determining overlay error. One aspect of the present invention relates to a continuously varying offset mark. The continuously varying offset mark is a single mark that includes over laid periodic structures, which have offsets that vary as a function of position. By way of example, the periodic structures may correspond to gratings with different values of a grating characteristic such as pitch. Another aspect of the present invention relates to methods for determining overlay error from the continuously varying offset mark. The method generally includes determining the center of symmetry of the continuously varying offset mark and comparing it to the geometric center of the mark. If there is zero overlay, the center of symmetry tends to coincide with the geometric center of the mark. If overlay is non zero (e.g., misalignment between two layers), the center of symmetry is displaced from the geometric center of the mark. The displacement in conjunction with the preset gain of the continuously varying offset mark is used to calculate the overlay error.
摘要翻译：本发明涉及覆盖标记和确定覆盖误差的方法。本发明的一个方面涉及连续变化的偏移标记。连续变化的偏移标记是包括过度周期性结构的单个标记，其具有作为位置的函数而变化的偏移。作为示例，周期性结构可以对应于具有诸如间距的光栅特性的不同值的光栅。本发明的另一方面涉及用于从连续变化的偏移标记确定覆盖误差的方法。该方法通常包括确定连续变化的偏移标记的对称中心并将其与标记的几何中心进行比较。如果有零覆盖，则对称中心倾向于与标记的几何中心重合。如果覆盖层不为零（例如，两层之间的未对准），则对称中心从标记的几何中心位移。使用与连续变化的偏移标记的预设增益相结合的位移来计算重叠误差。

2. 发明授权

US07528941B2 Order selected overlay metrology 有权
标题翻译：订购选择重叠计量
公开(公告)号：US07528941B2
公开(公告)日：2009-05-05
申请号：US11754892
申请日：2007-05-29
申请人： Daniel Kandel , Vladimir Levinski , Michael E. Adel , Joel L. Seligson
发明人： Daniel Kandel , Vladimir Levinski , Michael E. Adel , Joel L. Seligson
IPC分类号： G01N21/00
CPC分类号： G03F7/70633
摘要： Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.
摘要翻译：公开了用于测量半导体靶的特性（例如覆盖）的装置和方法。通常，在使用度量系统从目标物收集图像的同时执行顺序选择的成像和/或照明。在一个实现中，仅在系统的成像路径中提供可调谐空间调制。在其他实施方式中，在系统的照明和成像路径中提供可调谐的空间调制。在具体实现中，可调谐空间调制用于以衍射级±n对并行光栅进行成像。并排光栅可以在不同的层或相同的半导体晶片层中。通常通过测量光栅的中心对称性之间的距离来发现结构之间的覆盖。在本实施例中，对于给定的n（其中n是整数且不等于零）的选择，仅选择±n，并且光栅仅以这些衍射级成像。

3. 发明申请

US20100005442A1 Apparatus and Methods for Determining Overlay and Uses of Same 有权
标题翻译：用于确定叠加和使用的装置和方法
公开(公告)号：US20100005442A1
公开(公告)日：2010-01-07
申请号：US12560229
申请日：2009-09-15
申请人： Mark Ghinovker , Michael E. Adel , Jorge Poplawski , Joel L. Seligson
发明人： Mark Ghinovker , Michael E. Adel , Jorge Poplawski , Joel L. Seligson
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F7/70633 , G06F2217/12 , Y02P90/265
摘要： Disclosed are techniques and apparatus are provided for determining overlay error or pattern placement error (PPE) across the field of a scanner which is used to pattern a sample, such as a semiconductor wafer or device. This determination is performed in-line on the product wafer or device. That is, the targets on which overlay or PPE measurements are performed are provided on the product wafer or device itself. The targets are either distributed across the field by placing the targets within the active area or by distributing the targets along the streets (the strips or scribe areas) which are between the dies of a field. The resulting overlay or PPE that is obtained from targets distributed across the field may then be used in a number of ways to improve the fabrication process for producing the sample. For instance, the resulting overlay or PPE may be used to more accurately predict device performance and yield, more accurately correct a deviating photolithography scanning tool, or determine wafer lot disposition.
摘要翻译：公开了提供用于确定扫描仪领域的重叠误差或图案布置误差（PPE）的技术和装置，其用于对样品（例如半导体晶片或器件）进行图案化。该确定在产品晶片或器件上在线执行。也就是说，在产品晶片或器件本身上提供执行覆盖或PPE测量的目标。目标是通过将目标放置在活动区域内或通过在场的模具之间的街道（条带或划线区域）上分布目标来分布在场上。然后可以以多种方式使用从分布在场上的目标获得的所得覆盖物或PPE，以改进用于生产样品的制造过程。例如，所得覆盖层或PPE可用于更准确地预测设备性能和产量，更精确地校正偏离的光刻扫描工具，或确定晶片批次布置。

4. 发明授权

US07310789B2 Use of overlay diagnostics for enhanced automatic process control 有权
标题翻译：使用覆盖诊断功能进行增强的自动过程控制
公开(公告)号：US07310789B2
公开(公告)日：2007-12-18
申请号：US11510147
申请日：2006-08-24
申请人： Joel L. Seligson , Mark Ghinovker , John Robinson , Pavel Izikson , Michael E. Adel , Boris Simkin , David Tulipman , Vladimir Levinski
发明人： Joel L. Seligson , Mark Ghinovker , John Robinson , Pavel Izikson , Michael E. Adel , Boris Simkin , David Tulipman , Vladimir Levinski
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F7/70516 , G03F7/70633
摘要： Disclosed are apparatus and methods for obtaining and analyzing various unique metrics or “target diagnostics” from one or more semiconductor overlay targets. In one embodiment, an overlay target is measured to obtain one or both of two specific types of target diagnostic information, systematic error metrics and/or random noise metrics. The systematic error metrics generally quantify asymmetries of the overlay target, while the random noise metrics quantify and/or qualify the spatial noise that is proximate to or associated with the overlay target.
摘要翻译：公开了用于从一个或多个半导体覆盖目标获取和分析各种独特度量或“目标诊断”的装置和方法。在一个实施例中，测量覆盖目标以获得两种特定类型的目标诊断信息，系统误差度量和/或随机噪声度量中的一种或两种。系统误差度量通常量化覆盖目标的不对称性，而随机噪声度量量化和/或限定与覆盖目标邻近或相关联的空间噪声。

5. 发明授权

US07111256B2 Use of overlay diagnostics for enhanced automatic process control 有权
标题翻译：使用覆盖诊断功能进行增强的自动过程控制
公开(公告)号：US07111256B2
公开(公告)日：2006-09-19
申请号：US10438963
申请日：2003-05-14
申请人： Joel L. Seligson , Mark Ghinovker , John Robinson , Pavel Izikson , Michael E. Adel , Boris Simkin , David Tulipman , Vladimir Levinski
发明人： Joel L. Seligson , Mark Ghinovker , John Robinson , Pavel Izikson , Michael E. Adel , Boris Simkin , David Tulipman , Vladimir Levinski
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F7/70516 , G03F7/70633
摘要： Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.
摘要翻译：公开了分析覆盖目标质量的方法和装置。在一个实施例中，公开了一种从覆盖目标提取数据的方法。首先，提供覆盖目标的图像信息或一个或多个强度信号。通过分析覆盖目标的图像信息或强度信号，从覆盖目标获得重叠错误。通过分析覆盖目标的图像信息或强度信号也可以从覆盖目标获得系统误差度量。例如，系统误差可以指示覆盖目标的一个或多个部分的不对称度量。通过将统计模型应用于覆盖目标的图像信息或强度信号，从覆盖目标进一步获得噪声度量。噪声度量表示与覆盖目标相关联的噪声，例如粒状背景。在其他实施例中，然后基于系统误差度量和/或噪声度量以及覆盖数据来执行覆盖和/或步进分析程序。

6. 发明授权

US06928628B2 Use of overlay diagnostics for enhanced automatic process control 有权
标题翻译：使用覆盖诊断功能进行增强的自动过程控制
公开(公告)号：US06928628B2
公开(公告)日：2005-08-09
申请号：US10438962
申请日：2003-05-14
申请人： Joel L. Seligson , Mark Ghinovker , John Robinson , Pavel Izikson , Michael E. Adel , Boris Simkin , David Tulipman
发明人： Joel L. Seligson , Mark Ghinovker , John Robinson , Pavel Izikson , Michael E. Adel , Boris Simkin , David Tulipman
IPC分类号： G03F7/20 , G06F17/50 , G06K9/00 , H01L21/66
CPC分类号： G03F7/705 , G03F7/70516 , G03F7/70633
摘要： Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.
摘要翻译：公开了分析覆盖目标质量的方法和装置。在一个实施例中，公开了一种从覆盖目标提取数据的方法。首先，提供覆盖目标的图像信息或一个或多个强度信号。通过分析覆盖目标的图像信息或强度信号，从覆盖目标获得重叠错误。通过分析覆盖目标的图像信息或强度信号也可以从覆盖目标获得系统误差度量。例如，系统误差可以指示覆盖目标的一个或多个部分的不对称度量。通过将统计模型应用于覆盖目标的图像信息或强度信号，从覆盖目标进一步获得噪声度量。噪声度量表示与覆盖目标相关联的噪声，例如粒状背景。在其他实施例中，然后基于系统误差度量和/或噪声度量以及覆盖数据来执行覆盖和/或步进分析程序。

7. 发明授权

US07876438B2 Apparatus and methods for determining overlay and uses of same 有权
标题翻译：用于确定其叠加和使用的装置和方法
公开(公告)号：US07876438B2
公开(公告)日：2011-01-25
申请号：US12560229
申请日：2009-09-15
申请人： Mark Ghinovker , Michael E. Adel , Jorge Poplawski , Joel L. Seligson
发明人： Mark Ghinovker , Michael E. Adel , Jorge Poplawski , Joel L. Seligson
IPC分类号： G01B11/00 , G01B11/02 , G01B11/14 , G01B7/00 , G01B5/02 , G01C17/38 , G01R31/26
CPC分类号： G06F17/5068 , G03F7/70633 , G06F2217/12 , Y02P90/265
摘要： Disclosed are techniques and apparatus are provided for determining overlay error or pattern placement error (PPE) across the field of a scanner which is used to pattern a sample, such as a semiconductor wafer or device. This determination is performed in-line on the product wafer or device. That is, the targets on which overlay or PPE measurements are performed are provided on the product wafer or device itself. The targets are either distributed across the field by placing the targets within the active area or by distributing the targets along the streets (the strips or scribe areas) which are between the dies of a field. The resulting overlay or PPE that is obtained from targets distributed across the field may then be used in a number of ways to improve the fabrication process for producing the sample. For instance, the resulting overlay or PPE may be used to more accurately predict device performance and yield, more accurately correct a deviating photolithography scanning tool, or determine wafer lot disposition.
摘要翻译：公开了提供用于确定扫描仪领域的重叠误差或图案布置误差（PPE）的技术和装置，其用于对样品（例如半导体晶片或器件）进行图案化。该确定在产品晶片或器件上在线执行。也就是说，在产品晶片或器件本身上提供执行覆盖或PPE测量的目标。目标是通过将目标放置在活动区域内或通过在场的模具之间的街道（条带或划线区域）上分布目标来分布在场上。然后可以以多种方式使用从分布在场上的目标获得的所得覆盖物或PPE，以改进用于生产样品的制造过程。例如，所得覆盖层或PPE可用于更准确地预测设备性能和产量，更精确地校正偏离的光刻扫描工具，或确定晶片批次布置。

8. 发明授权

US07608468B1 Apparatus and methods for determining overlay and uses of same 失效
标题翻译：用于确定其叠加和使用的装置和方法
公开(公告)号：US07608468B1
公开(公告)日：2009-10-27
申请号：US10950172
申请日：2004-09-23
申请人： Mark Ghinovker , Michael E. Adel , Jorge Poplawski , Joel L. Seligson
发明人： Mark Ghinovker , Michael E. Adel , Jorge Poplawski , Joel L. Seligson
IPC分类号： G01R31/26 , H01L21/00 , G01B11/00 , G01B11/14 , G01B5/02 , G01D18/00
CPC分类号： G06F17/5068 , G03F7/70633 , G06F2217/12 , Y02P90/265
摘要： Disclosed are techniques and apparatus are provided for determining overlay error or pattern placement error (PPE) across the field of a scanner which is used to pattern a sample, such as a semiconductor wafer or device. This determination is performed in-line on the product wafer or device. That is, the targets on which overlay or PPE measurements are performed are provided on the product wafer or device itself. The targets are either distributed across the field by placing the targets within the active area or by distributing the targets along the streets (the strips or scribe areas) which are between the dies of a field. The resulting overlay or PPE that is obtained from targets distributed across the field may then be used in a number of ways to improve the fabrication process for producing the sample. For instance, the resulting overlay or PPE may be used to more accurately predict device performance and yield, more accurately correct a deviating photolithography scanning tool, or determine wafer lot disposition.
摘要翻译：公开了提供用于确定跨扫描仪领域的重叠误差或图案放置误差（PPE）的技术和装置，其用于对诸如半导体晶片或器件的样品进行图案化。该确定在产品晶片或器件上在线执行。也就是说，在产品晶片或器件本身上提供执行覆盖或PPE测量的目标。目标是通过将目标放置在活动区域内或通过在场的模具之间的街道（条带或划线区域）上分布目标来分布在场上。然后可以以多种方式使用从分布在场上的目标获得的所得覆盖物或PPE，以改进用于生产样品的制造过程。例如，所得覆盖层或PPE可用于更准确地预测设备性能和产量，更精确地校正偏离的光刻扫描工具，或确定晶片批次布置。

9. 发明申请

US20110051116A1 Substrate Matrix To Decouple Tool And Process Effects 有权
标题翻译：基板矩阵去除工具和过程效应
公开(公告)号：US20110051116A1
公开(公告)日：2011-03-03
申请号：US12990183
申请日：2009-05-20
申请人： Pavel Izikson , Michael E. Adel , Daniel Kandel
发明人： Pavel Izikson , Michael E. Adel , Daniel Kandel
IPC分类号： G03B27/32
CPC分类号： G03F7/70641 , G05B19/41845 , G05B2219/32187 , G05B2219/36307 , H01L22/20 , Y02P90/16 , Y02P90/22
摘要： A method of characterizing a process by selecting the process to characterize, selecting a parameter of the process to characterize, determining values of the parameter to use in a test matrix, specifying an eccentricity for the test matrix, selecting test structures to be created in cells on a substrate, processing the substrate through the process using in each cell the value of the parameter as determined by the eccentric test matrix, measuring a property of the test structures in the cells, and developing a correlation between the parameter and the property.
摘要翻译：一种通过选择表征过程来表征过程的方法，选择过程的参数来表征，确定在测试矩阵中使用的参数的值，指定测试矩阵的偏心度，选择要在单元格中创建的测试结构在基板上，通过在每个单元中使用由偏心测试矩阵确定的参数值来处理基板，测量单元中的测试结构的性质，并且发展参数和属性之间的相关性。

10. 发明授权

US08142966B2 Substrate matrix to decouple tool and process effects 有权
标题翻译：基板矩阵去耦工具和过程效应
公开(公告)号：US08142966B2
公开(公告)日：2012-03-27
申请号：US12990183
申请日：2009-05-20
申请人： Pavel Izikson , Michael E. Adel , Daniel Kandel
发明人： Pavel Izikson , Michael E. Adel , Daniel Kandel
IPC分类号： G03F9/00 , H01L21/66
CPC分类号： G03F7/70641 , G05B19/41845 , G05B2219/32187 , G05B2219/36307 , H01L22/20 , Y02P90/16 , Y02P90/22
摘要： A method of characterizing a process by selecting the process to characterize, selecting a parameter of the process to characterize, determining values of the parameter to use in a test matrix, specifying an eccentricity for the test matrix, selecting test structures to be created in cells on a substrate, processing the substrate through the process using in each cell the value of the parameter as determined by the eccentric test matrix, measuring a property of the test structures in the cells, and developing a correlation between the parameter and the property.
摘要翻译：一种通过选择表征过程来表征过程的方法，选择过程的参数来表征，确定在测试矩阵中使用的参数的值，指定测试矩阵的偏心度，选择要在单元格中创建的测试结构在基板上，通过在每个单元中使用由偏心测试矩阵确定的参数值来处理基板，测量单元中的测试结构的性质，并且发展参数和属性之间的相关性。

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